P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
1 Version: O2004
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
FEATURES
● Low profile package
● Ideal for automated placement
● Glass passivated junction
● Excellent clamping capability
● Typical IR less than 1μA above 10V
● Fast response time: Typically less than
1.0ps from 0 volt to BV min
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.090 g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VWM 5.5 - 185 V
VBR 6.8 - 220 V
PPPSM 600 W
TJ MAX 150 °C
Package DO-214AA (SMB)
Configuration Single die
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
10/1000μs waveform (1) PPPSM 600 W
Steady state power dissipation at TA=25°C Ptot 3 W
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load IFSM 100 A
Forward Voltage @ IF=50A for Uni-directional only (2) VF 3.5/5.0 V
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2
2. VF=3.5V on P6SMB6.8 - P6SMB91 device and VF=5.0V on P6SMB100 - P6SMB220 device.
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A
2. Electrical characteristics apply in both directions
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
2 Version: O2004
THERMAL PERFORMANCE
SYMBOL
TYP
UNIT
Junction-to-case thermal resistance RӨJC 10 °C/W
Junction-to-ambient thermal resistance RӨJA 55 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown
Voltage
VBR (V)
(Note 1)
Test
Current
IT (mA)
Stand-Off
Voltage
VWM
(V)
Maximum
Reverse
Leakage
@VWM
ID(µA)
Maximum
Peak Pulse
Current
IPPM(A)
(Note 2)
Maximum
clamping
voltage
VC@IPPM
(V)
Maximum
Temperature
Coefficient of
VBR(%/°C)
Min Max
P6SMB6.8 KDJ 6.12 7.48 10 5.50 1000 58 10.8 0.057
P6SMB6.8A
KEJ 6.46 7.14 10 5.80 1000 60 10.5 0.057
P6SMB7.5 KFJ 6.75 8.25 10 6.05 500 53 11.7 0.061
P6SMB7.5A
KGJ 7.13 7.88 10 6.40 500 55 11.3 0.061
P6SMB8.2 KHJ 7.38 9.02 10 6.63 200 50 12.5 0.065
P6SMB8.2A
KKJ 7.79 8.61 10 7.02 200 52 12.1 0.065
P6SMB9.1 KLJ 8.19 10.00
1.0 7.37 50 45 13.8 0.068
P6SMB9.1A
KMJ 8.65 9.55 1.0 7.78 50 47 13.4 0.068
P6SMB10 KNJ 9.00
11.00
1.0 8.10 10 42 15.0 0.073
P6SMB10A KPJ 9.50
10.5 1.0 8.55 10 43 14.5 0.073
P6SMB11 KQJ 9.90
12.1 1.0 8.92 1 38 16.2 0.075
P6SMB11A KRJ 10.5 11.6 1.0 9.40 1 40 15.6 0.075
P6SMB12 KSJ 10.8 13.2 1.0 9.72 1 36 17.3 0.078
P6SMB12A KTJ 11.4 12.6 1.0 10.2 1 37 16.7 0.078
P6SMB13 KUJ 11.7 14.3 1.0 10.5 1 33 19.0 0.081
P6SMB13A KVJ 12.4 13.7 1.0 11.1 1 34 18.2 0.081
P6SMB15 KWJ 13.5 16.5 1.0 12.1 1 28 22.0 0.084
P6SMB15A KXJ 14.3 15.8 1.0 12.8 1 29 21.2 0.084
P6SMB16 KYJ 14.4 17.6 1.0 12.9 1 26 23.5 0.086
P6SMB16A KZJ 15.2 16.8 1.0 13.6 1 28 22.5 0.086
P6SMB18 LDJ 16.2 19.8 1.0 14.5 1 23 26.5 0.088
P6SMB18A LEJ 17.1 18.9 1.0 15.3 1 25 25.5 0.088
P6SMB20 LFJ 18.0
22.0
1.0 16.2 1 21 29.1 0.090
P6SMB20A LGJ 19.0
21.0
1.0 17.1 1 22 27.7 0.090
P6SMB22 LHJ 19.8 24.2 1.0 17.8 1 19 31.9 0.092
P6SMB22A LKJ 20.9 23.1 1.0 18.8 1 20 30.6 0.092
P6SMB24 LLJ 21.6 26.4 1.0 19.4 1 18 34.7 0.094
P6SMB24A LMJ 22.8 25.2 1.0 20.5 1 19 33.2 0.094
P6SMB27 LNJ 24.3 29.7 1.0 21.8 1 16 39.1 0.096
P6SMB27A LPJ 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096
P6SMB30 LQJ 27.0
33.0
1.0 24.3 1 14.0 43.5 0.097
P6SMB30A LRJ 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097
P6SMB33 LSJ 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098
P6SMB33A LTJ 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098
P6SMB36 LUJ 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099
P6SMB36A LVJ 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099
P6SMB39 LWJ 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100
P6SMB39A LXJ 37.1 41.0
1.0 33.3 1 11.6 53.9 0.100
P6SMB43 LYJ 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101
P6SMB43A LZJ 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101
P6SMB47 MDJ 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101
P6SMB47A MEJ 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101
P6SMB51 MFJ 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
3 Version: O2004
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown
Voltage
VBR (V)
(Note 1)
Test
Current
IT (mA)
Stand-Off
Voltage
VWM
(V)
Maximum
Reverse
Leakage
@VWM
ID(µA)
Maximum
Peak Pulse
Current
IPPM(A)
(Note 2)
Maximum
clamping
voltage
VC@IPPM
(V)
Maximum
Temperature
Coefficient of
VBR(%/°C)
Min Max
P6SMB51A MGJ 48.5 53.6 1.0 43.6 1 8.9 70.1 0.102
P6SMB56 MHJ 50.4 61.6 1.0 45.4 1 7.8 80.5 0.103
P6SMB56A MKJ 53.2 58.8 1.0 47.8 1 8.1 77.0 0.103
P6SMB62 MLJ 55.8 68.2 1.0 50.2 1 7.0 89.0 0.104
P6SMB62A MMJ 58.9 65.1 1.0 53.0 1 7.4 85.0 0.104
P6SMB68 MNJ 61.2 74.8 1.0 55.1 1 6.4 98.0 0.104
P6SMB68A MPJ 64.6 71.4 1.0 58.1 1 6.8 92.0 0.104
P6SMB75 MQJ 67.5 82.5 1.0 60.7 1 5.8 108 0.105
P6SMB75A MRJ 71.3 78.8 1.0 64.1 1 6.1 103 0.105
P6SMB82 MSJ 73.8 90.2 1.0 66.4 1 5.3 118 0.105
P6SMB82A MTJ 77.9 86.1 1.0 70.1 1 5.5 113 0.105
P6SMB91 MUJ 81.9 100 1.0 73.7 1 4.8 131 0.106
P6SMB91A MVJ 86.5 95.5 1.0 77.8 1 5.0 125 0.106
P6SMB100 MWJ 90 110 1.0 81.0 1 4.3 144 0.106
P6SMB100A
MXJ 95 105 1.0 85.5 1 4.5 137 0.106
P6SMB110 MYJ 99 121 1.0 89.2 1 3.9 158 0.107
P6SMB110A
MZJ 105 116 1.0 94.0 1 4.1 152 0.107
P6SMB120 NDJ 108 132 1.0 97.2 1 3.6 173 0.107
P6SMB120A
NEJ 114 126 1.0 102.0 1 3.8 165 0.107
P6SMB130 NFJ 117 143 1.0 105.0 1 3.3 187 0.107
P6SMB130A
NGJ 124 137 1.0 111.0 1 3.5 179 0.107
P6SMB150 NHJ 135 165 1.0 121.0 1 2.9 215 0.108
P6SMB150A
NKJ 143 158 1.0 128.0 1 3.0 207 0.108
P6SMB160 NLJ 144 176 1.0 130.0 1 2.7 230 0.108
P6SMB160A
NMJ 152 168 1.0 136.0 1 2.8 219 0.108
P6SMB170 NNJ 153 187 1.0 138.0 1 2.5 244 0.108
P6SMB170A
NPJ 162 179 1.0 145.0 1 2.6 234 0.108
P6SMB180 NQJ 162 198 1.0 146.0 1 2.4 258 0.108
P6SMB180A
NRJ 171 189 1.0 154.0 1 2.5 246 0.108
P6SMB200 NSJ 180 220 1.0 162.0 1 2.1 287 0.108
P6SMB200A
NTJ 190 210 1.0 171.0 1 2.2 274 0.108
P6SMB220 NUJ 198 242 1.0 175.0 1 1.8 342 0.108
P6SMB220A
NVJ 209 231 1.0 185.0 1 1.9 328 0.108
Notes:
1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having VWM of 10 V and under, the ID limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
4 Version: O2004
ORDERING INFORMATION
ORDERING CODE
(Note 1,2,3) PACKAGE
PACKING
P6SMBxxxxHR5G SMB 850 / 7" reel
P6SMBxxxxHM4G SMB 3,000 / 13" reel
P6SMBxxxxHR5 SMB 850 / 7" reel
P6SMBxxxxHM4 SMB 3,000 / 13" reel
P6SMBxxxx R5G SMB 850 / 7" reel
P6SMBxxxx M4G SMB 3,000 / 13" reel
P6SMBxxxx R5 SMB 850 / 7" reel
P6SMBxxxx M4 SMB 3,000 / 13" reel
Note 1:
"xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
Note 2:
"H" means AEC-Q101 qualified
Note 3:
“G” means green compound (halogen free)
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
5 Version: O2004
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
Fig2. Pulse Derating Curve
Fig3. Clamping Power Pulse Waveform
Fig4. Maximum Non-Repetitive Forward Surge
Current Unidirectional Only
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
10
100
1 10 100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
IPPM, PEAK PULSE CURRENT (%)
t, TIME (ms)
td
Peak value
IPPM
Rise time tr=10μs to 100%
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
PEAK PULSE POWER(PPP) OR CURRENT (IPP)
DERATING IN PERCENTAGE (%)
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
6 Version: O2004
10
100
1000
10000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
VR=0
MEASURED at
STAND-OFF
VOLTAGE,Vwm
Fig5. Typical Junction Capacitance
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
7 Version: O2004
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
DO-214AA (SMB)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
SMB
(1)
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Note(1): Cathode band for uni-directional products only
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
8 Version: O2004
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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