LITE-ON SEMICONDUCTOR S08M02-A SERIES SCRs 0.8 AMPERES RMS 100 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 (TO-226AA) TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts On- State Current Rating of 0.8 Amperes RMS at 80 High Surge Current Capability -- 10 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt -- 20 V/msec Minimum at 110 Glass-Passivated Surface for Reliability and Uniformity TO-92 DIM. SEATING PLANE Pb-Free Package MIN. MAX. A 4.45 B 4.32 5.33 C 3.18 4.19 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 H 2.93 ----- I 3.43 ----- 4.70 All Dimensions in millimeter PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Off- State Voltage (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) S08M02100A S08M02200A S08M02400A S08M02600A On-State RMS Current (TC = 80 ) 180 Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25 ) VDRM, VRRM 100 200 400 600 IT(RMS) 0.8 Amp ITSM 10 Amps It 0.415 As PGM 0.1 Watt PG(AV) 0.1 Watt IGM 1.0 Amp VGRM 5 Volts TJ -40 to +110 Tstg -40 to +150 2 Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TA = 25 , Pulse Width 1.0 us) Forward Average Gate Power (TA = 25 , t = 8.3 ms) Forward Peak Gate Current (TA = 25 , Pulse Width 1.0 us) Reverse Peak Gate Voltage (TA = 25 , Pulse Width 1.0 ms) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded Volts 2 Rev.3, Jun-2005, KTXD01 RATING AND CHARACTERISTIC CURVES S08M02-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds Symbol Value Unit RthJC RthJA 75 150 /W TL 260 ELECTRICAL CHARACTERISTICS (Tc=25unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 100 uA VTM ---- ---- 1.7 Volts IGT ---- 40 200 uA IH ------- 0.5 ---- 5.0 10 mA TC=25 TC=-40 IL ---- 0.6 ---- 10 15 mA TC= 25 TC=-40 VGT ------- 0.62 ----- 0.8 1.2 Volts Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, PGK=1K Ohms, TJ=110 dv/dt 20 35 ---- V/us Repetitive Critical Rate of Rise of On-State Current IPK=20A,Pw=10 usec,diG/dt=1A/usex,Igt=20mA di/dt ---- ---- 50 A/us OFF CHARACTERISTICS Tc=25 Tc=125 Peak Reptitive Forward or Reverse Blocking Current (1) (VD=Rated VDRM and VRRM; RGK =1K Ohms) ON CHARACTERISTICS Peak Forward On-State Voltage @TA=25 (ITM= 1.0A Peak, Pulse Width 1.0 ms, Duty Cycle 1%) Gate Trigger Current (Continuous dc) (2) (VAK = 7.0 Vdc; RL = 100 Ohms) Holding Current (VAK = 7.0 V, Initiating Current = 20 mA) Latch Current (VAK =7.0 V, Ig= 200 uA) Gate Trigger Voltage (Continuous dc) (VD = 7.0 Vdc; RL =100 Ohms) TC=25 TC=25 TC=-40 DYNAMIC CHARACTERISTICS (1) RGK = 1000 Ohms included in measurement (2) Does not include RGK in measure RATING AND CHARACTERISTIC CURVES S08M02-A SERIES RATING AND CHARACTERISTIC CURVES S08M02-A SERIES Specifications mentioned in this publication are subject to change without notice.