TO-92 (TO-226AA)
SEATING PLANE
S08M02-A SERIES
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 Volts
On–State Current Rating of 0.8 Amperes RMS at 80
℃
High Surge Current Capability — 10 Amperes
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt — 20 V/msec Minimum at 110
℃
Glass-Passivated Surface for Reliability and Uniformity
Pb-Free Package
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
0.8 AMPERES RMS
100 thru 600 VOLTS
SEMICONDUCTOR
LITE-ON
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
100
200
400
600
Volts
On-State RMS Current (
T
C
=
80
℃
) 180° Conduction Angles I
T(RMS)
0.8 Amp
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
℃
)I
TSM
10 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 0.415 A s
Forward Peak Gate Power
(T
A
= 25
℃
, Pulse Width 1.0 us)
≦
P
GM
0.1 Watt
Forward Average Gate Power (
T
A
= 25
℃
, t = 8.3 ms) P
G(AV)
0.1 Watt
Forward Peak Gate Current (
T
A
= 25
℃
, Pulse Width
1.0 us
≦
)I
GM
1.0 Amp
Reverse Peak Gate Voltage (
T
A
= 25
℃
, Pulse Width 1.0 ms)
≦
V
GRM
5Volts
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev.3, Jun-2005, KTXD01
S08M02100A
S08M02200A
S08M02400A
S08M02600A
TO-92 (TO-226AA)
All Dimensions in millimeter
TO-92
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.45 4.70
5.33
4.32
3.18 4.19
1.39
1.15
2.42 2.66
12.7 ------
2.04 2.66
3.43
-----
I-----
2.93
1Cathode
2Gate
3Anode
PIN ASSIGNMENT
RATING AND CHARACTERISTIC CURVES
S08M02-A SERIES
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient R
thJC
R
thJA
75
150
℃
/W
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current (1) T
c
=25
℃
(VD=Rated VDRM and VRRM; RGK =1K Ohms) T
c
=125
℃
I
DRM
I
RRM
----
---- ----
----
10
100 uA
Peak Forward On-State Voltage @T
A
=25
℃
(I
TM=
±1.0A Peak, Pulse Width 1.0 ms, Duty Cycle 1%)
≦ ≦
V
TM
---- ---- 1.7 Volts
Gate Trigger Current (Continuous dc) (2) T
C
=25
℃
(V
AK
= 7.0 Vdc; RL = 100 Ohms) I
GT
---- 40 200 uA
Holding Current (V
AK
= 7.0 V, Initiating Current = 20 mA) T
C
=25
℃
T
C
=-40
℃
I
H
----
---- 0.5
---- 5.0
10 mA
Latch Current (V
AK
=7.0 V, Ig= 200 uA) T
C
=25
℃
T
C
=-40
℃
I
L
---- 0.6
---- 10
15 mA
Gate Trigger Voltage (Continuous dc) T
C
= 25
℃
(V
D
= 7.0 Vdc; R
L
=100 Ohms) T
C
=-40
℃
V
GT
----
---- 0.62
----- 0.8
1.2 Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, PGK=1K Ohms, T
J
=110
℃
dv/dt 20 35 ---- V/us
Repetitive Critical Rate of Rise of On-State Current
IPK=20A,Pw=10 usec,diG/dt=1A/usex,Igt=20mA di/dt ---- ---- 50 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
c
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
(1) R
GK
= 1000 Ohms included in measurement
(2) Does not include R
GK
in measure
RATING AND CHARACTERISTIC CURVES
S08M02-A SERIES
RATING AND CHARACTERISTIC CURVES
S08M02-A SERIES
Specifications mentioned in this publication are subject to change without notice.
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