2N2905A 2N2907A (R) SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO V CEO Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) -60 -60 V V V EBO IC Emitter-Base Voltage (I C = 0) Collector Current -5 -0.6 V A I CM Collector Peak Current (t p < 5 ms) -0.8 A P tot Total Dissipation at T amb 25 o C for 2N2905A for 2N2907A at T C 25 o C for 2N2905A for 2N2907A Storage Temperature 0.6 0.4 W W 3 1.8 W W T stg Tj Parameter Max. Operating Junction Temperature February 2003 -65 to 175 o C 175 o C 1/7 2N2905A/2N2907A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO-39 TO-18 50 250 83.3 375 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit -10 -10 nA A I CBO Collector Cut-off Current (I E = 0) V CB = -50 V V CB = -50 V I CEX Collector Cut-off Current (V BE = 0.5V) V CE = -30 V -50 nA I BEX Base Cut-off Current (V BE = 0.5V) V CE = -30 V -50 nA Collector-Base Breakdown Voltage (I E = 0) I C = -10 A -60 V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -60 V -5 V V (BR)CBO T j = 150 o C V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 A V CE(sat) Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -0.4 -1.6 V V V BE(sat) Base-Emitter Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -1.3 -2.6 V V DC Current Gain IC IC IC IC IC V CE = -10 V CE = -10 V CE = -10 V CE = -10 V CE = -10 h FE fT -0.1 mA -1 mA -10 mA -150 mA -500 mA Transition Frequency V CE = -20 V I C = -50 mA C EBO Emitter-Base Capacitance IC = 0 V EB = -2 V C CBO Collector-Base Capacitance IE = 0 V CB = -10 V t d Delay Time V CC = -30 V I B1 = -15 mA t r Rise Time V CC = -30 V I B1 = -15 mA t s t f V V V V V f = 100 MHz f = 1MHz 75 100 100 100 50 300 200 MHz 30 pF 8 pF I C = -150 mA 10 ns I C = -150 mA 40 ns Storage Time V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA 80 ns Fall Time V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA 30 ns t on Turn-on Time V CC = -30 V I B1 = -15 mA 45 ns t off Turn-off Time V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA 100 ns * Pulsed: Pulse duration = 300 s, duty cycle 1 % ** See test circuit 2/7 = = = = = f = 1MHz I C = -150 mA 2N2905A/2N2907A Normalized DC Current Gain. Collector Emitter Saturation Voltage. Collector Base and Emitter-base capacitances. Switching Characteristics. 3/7 2N2905A/2N2907A Test Circuit for ton, tr, td. PULSE GENERATOR : tr 2.0 ms Frequency = 150 Hz Zo = 50 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 10 M Test Circuit for toff, to, tf. PULSE GENERATOR : tr 2.0 ns Frequency = 150 Hz Zo = 50 4/7 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 M 2N2905A/2N2907A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D G A I E F H B L C 0016043 5/7 2N2905A/2N2907A TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 6/7 2N2905A/2N2907A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7