© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 48 A
IAR TC= 25°C12A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ≤150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 50 µA
VGS = 0 V TJ= 125°C 1.5 mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 1.05 Ω
Note 1
98856 (8/01)
Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
lRF capable MOSFETs
lDouble metal process for low gate
resistance
lRugged polysilicon gate cell structure
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
lFast intrinsic rectifier
Applications
lDC-DC converters
lSwitched-mode and resonant-mode
power supplies, >500kHz switching
lDC choppers
l13.5 MHz industrial applications
lPulse generation
lLaser drivers
l RF amplifiers
Advantages
lSpace savings
lHigh power density
TO-247 AD (IXFH)
(TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 12N100F
IXFT 12N100F VDSS = 1000 V
ID25 = 12 A
RDS(on) = 1.05 ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25 Note 1 8 12 S
Ciss 2700 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 305 pF
Crss 93 pF
td(on) 12 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 9.8 ns
td(off) RG = 2.0 Ω (External) 31 ns
tf12 ns
Qg(on) 77 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 nC
Qgd 42 nC
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 12 A
ISM Repetitive; 48 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 0.8 µC
IRM 7A
IF = IS,-di/dt = 100 A/µs, VR = 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFH 12N100F
IXFT 12N100F
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min Recommended Footprint
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
