SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A
COMPLEMENTARY TYPE FZT749
PARTMARKING DETAIL FZT649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 8A
Continuous Collector Current IC3A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 35 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=30V
VCB
=30V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.40
0.3
0.6
V
V
IC=1A, IB
=100mA*
IC=3A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1.0 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
75
15
200
200
150
50
300
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition Frequency fT150 240 MHz IC=100mA, VCE=5V
f=100MHz
Output Capacitance Cobo 25 50 pF VCB
=10V, f=1MHz
Switching Times ton 55 ns IC=500mA, VCC=10V
IB1=IB2=50mA
toff 300 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT649
FZT649
C
C
E
B
3 - 206 3 - 205
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V- (Volts)
0
0.2
0.01 0.1 101
0.4
0.6
0.8
IC - Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
0.01 100.1 1
1.0
2.0
I
C
/I
B
=10
I
C
/I
B
=10
IC - Collector Current (Amps)
hFE v IC
h- Gain
0.001 0.01 100.1 1
200
V
CE
=2V
0.01 0.1 110
0.4
20
100
0.6
IC - Collector Current (Amps)
VBE(on) v IC
V- (Volts)
0.8
1.0
1.2
1.4
0.0010.0001
V
CE
=2V
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
120
140
0
ts
ns
600
400
200
800
1000
0
td
tr
tf
ns
60
40
20
80
100
SinglePulseTestatT
amb
=25°C
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A
COMPLEMENTARY TYPE FZT749
PARTMARKING DETAIL FZT649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 8A
Continuous Collector Current IC3A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 35 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=30V
VCB
=30V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.40
0.3
0.6
V
V
IC=1A, IB
=100mA*
IC=3A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1.0 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
75
15
200
200
150
50
300
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition Frequency fT150 240 MHz IC=100mA, VCE=5V
f=100MHz
Output Capacitance Cobo 25 50 pF VCB
=10V, f=1MHz
Switching Times ton 55 ns IC=500mA, VCC=10V
IB1=IB2=50mA
toff 300 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT649
FZT649
C
C
E
B
3 - 206 3 - 205
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V- (Volts)
0
0.2
0.01 0.1 101
0.4
0.6
0.8
IC - Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
0.01 100.1 1
1.0
2.0
I
C
/I
B
=10
I
C
/I
B
=10
IC - Collector Current (Amps)
hFE v IC
h- Gain
0.001 0.01 100.1 1
200
V
CE
=2V
0.01 0.1 110
0.4
20
100
0.6
IC - Collector Current (Amps)
VBE(on) v IC
V- (Volts)
0.8
1.0
1.2
1.4
0.0010.0001
V
CE
=2V
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
120
140
0
ts
ns
600
400
200
800
1000
0
td
tr
tf
ns
60
40
20
80
100
SinglePulseTestatT
amb
=25°C
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
