Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P41 98.2MOS FIELD EFFECT POWER TRANSISTOR 2SK1286 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1286 is N-channel MOS Field Effect Transistor de- signed for solenoid, motor and lamp driver. FEATURES @ Low On-state Resistance Rosion) $ 70 MQ (Ves = 10 V, Ib = 8 A} Rosion) $ 95 MQ (Vas = 4 V, Ip = 8 A) @ Low Ciss Ciss = 1 400 pF TYP. @ Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices {Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS {Ts = 25 C) Drain to Source Voltage Voss 60 Vv Gate to Source Voltage Vessiacy = 20 Vv Drain Current (DC) Ioipe) +15 A Drain Current (pulse} IDtputsey* +60 A Total Power Dissipation (Ta = 25 C) Pr 2.0 Ww Total Power Dissipation (Tc = 25 C) Pr2 30 WwW Channel Temperature Teh 150 c Storage Temperature Tstg -55 to +150 C * PW 10 us, Duty Cycle S$ 1% PACKAGE DIMENSIONS (in millimeters) 10.0 + 0.3 15.0203 Gate {G) Gate protection diode 12.0 + 0.2 0.65 + 0.1 2.5+0.1 1. Gate 2. Drain 3. Source Drain (D) body diode Source (S) Document No, TC-2385 Date Published July 1993 M Printed in Japan NEC Corporation 1993NEC 2SK1286 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance Rosion) 55 70 maQ Ves = 10 V, lb=8A Drain to Source On-state Resistance Rosion} 80 95 mQ Ves = 4.0V, b=8A Gate to Source Cutoff Voltage Vesioth - 1.0 2.5 Vos = 10 V, lb=1mMA Forward Transfer Admittance | yee | 7.0 14 Vos = 10 V, lb = 8A Drain Leakage Current loss 10 HA Vos = 60 V, Ves = 0 Gate to Source Leakage Current less +10 BA Ves = +20 V, Vos = 0 Input Capacitance Ciss 1 400 pF Vos = 10 V Output Capacitance Coss 500 pF Ves = 0 Reverse Transfer Capacitance Crss 130 pF f= 1 MHz Turn-On Delay Time tdton) 25 ns Vestom = 10 V Rise Time tr 160 ns Von = 30 V Turn-Off Delay Time tatotn 130 ns_| Io= 10 A, Re= 100 Fall Time t 80 ns | wo 80 0 Total Gate Charge Qe 30 nc Ves = 10V Gate to Source Charge Qes 5 nc ln = 20A Gate to Drain Charge Qsp 10 nc Voo = 48 V Diode Forward Voltage Veo 1.0 Vv Iso = 15 A, Vas = 0 Reverse Recovery Time tr 150 ns lr = 20 A, Ves = 0 _ Reverse Recovery Charge Qn 250 nc di/dt = 50 A/ps Test Circuit 1: Switching Time tur, +R R PG. Re = 70 Q 1 = Ves Test Circuit 2: Gate Charge Ils=2mA PG. 502 Ru VopNEC TYPICAL CHARACTERISTICS (Ta = 25 C) x 1 w e g 3 oO oa oO & oc + o o D oS c oD 2 @ Ou | - "oO NY << | c s Co, oO a | A NU < t c 3 oO < a t 2 7 100 80 60 40 20 100 10 1.0 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA X aN MN 20 40 60 80 100 120 140 160 Tc - Case Temperature C FORWARD BIAS SAFE OPERATING AREA Te= 25C 1 Single Pulse 4 10 100 100 10 1.0 0.1 0 1000 Vos Drain to Source Voltage V TRANSFER CHARACTERISTICS Vos = 10 V Puised 2 4 6 8 Ves Gate to Source Voltage - V Pr - Total Power Dissipation - W lp ~ Drain Current -A 50 40 30 20 10 2SK1286 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE XN NA SN mM 20 40 60 80 100 120 140 160 Tc Case Temperature C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 2 4 6 8 Vos Drain to Source Voltage - VNEC 2SK1286 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 1.0 0.1 0.01 Te = 25C Single Pulse 0.001 Channel to Case "10 100 ys 1m 10m 100 m 1 10 100 1000 Ithich-ci(t) ~ Transient Thermal Resistance C/W PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE VOLTAGE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE Vos = 10 Pulsed 8 Pulsed on 1 g in g $ 5 Ta =-25 C 8 we 1 oy 1 3 10 8 75C 2 g 125 C $ 3 a ID=8A 5 1 u = | & bo =3A a S| 0.1 1 10 4100 0 4 8 12 16 20 lo - Drain Current-A Ves Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. G RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE @ 0.24 7 3.0 Vos = 10 V & Pulsed & lb=1mA @ 0.20 = s 0.16 % 20 0.12 2 & 0.08 2 1.0 o 2 . e 0.04 I a i a = 0 o 0 g 01 1 10 100 > -60 0 . 50 100 750 Ip Drain Current-A Ten ~ Channel Temperature CNEC DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.20 lD=8A 0.15 0.10 0.05 0 ~50 0 50 100 150 Teh - Channel Temperature C Rosion} ~ Drain to Source On-State Resiatance - Q CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 100 Ciss, Coss, Crss - Capacitance ~ pF 10 1 10 100 Vos - Drain to Source Voltage V DYNAMIC INPUT CHARACTERISTICS Ip = 20A Vos ~ Drain to Source Voltage - V 0 8 16 24 32 40 Qg ~ Gate Charge - nC Ves - Gate to Source Voltage -V 2SK1286 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed Iso Diode Forward Current -A 0.1 0 0.5 1.0 1.5 2.0 2.5 Vso Source to Drain Voltage V SWITCHING CHARACTERISTICS = fon) 3 o Veston) = 10V Q 3 oO = Q o taton, tr, Faton, te - Swithcing Time ns = O us 1.0 10 100 lo - Drain Current -A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 50 Ves = 0 Pulsed 200 tr Reverse Recovery Time ns 2 o 0.1 1.0 10 100 lr - Diode Forward Current - ANEC 2SK1286 Reference Application note name No. Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. IEI-1207NEC 2SK1286 [MEMO]NEC 2SK1286 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6