Rugged Power MOSFETs File Number 2021 Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V tos(on) = 1.5Q and 2.09 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics B High input impedance The {RF830R, IRF831R, IRF832R and IRF833R are ad- IRF830R, IRF831R, IRF832R, IRF&833R N-CHANNEL ENHANCEMENT MODE 0 s 92CS-a>K50 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE vanced power MOSFETs designed, tested, and guaranteed N i to withstand a specified levei of energy in the breakdown (FLANGE) DRAIN avalanche mode of operation. These are n-channel en- CH Coe hancement-mode silicon-gate power fielcl-effect transis- tors designed for applications such as switching regulators, _ t switching converters, motor drivers, relay drivers, and driv- TOP VIEW GATE ers for high-power bipolar switching transistors requiring 92cs-39528 high speed and low gate-drive power. These types can be JEDEC TO-220AB operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Parameter IRF830R | IRF831R | IRF832R | IRF833R Units Vos Drain - Source Voitage 500 450 500 450 Vv Voea Drain - Gate Voltage (Res = 20 KN) @ 500 450 500 450 V lb @ Te = 25C Continuous Drain Current 45 45 40 40 A lo @ Te = 100C Continuous Drain Current 3.0 3.0 2.5 2.56 A lom Pulsed Drain Current @ 18 18 16 16 A Ves Gate - Source Voltage +20 v Pp @ Te = 25C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) w/C Eas Single Pulse Avalanche Energy Rating @ 300 mj Te See ene Range ~55 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-157Rugged Power MOSFETs IRF830R, IRF831R, IRF832R, IRF833R Electrical Characteristics @ Tc; = 25C (Unless Otherwise Specified) P Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF8&30R = IRF32R 500 ~ - Vv Vas = OV IRF831R = IRF833R 450 - _- v Ip = 250uA Vesim Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Vas, lo = 2504 A loss Gate-Source Leakage Forward ALL _ _ 500 nA Vas = 20V lass Gate-Source Leakage Reverse ALL = = -500 nA Ves = -20V loss Zero Gate Voltage Drain Current = = 250 HA Vos = Max. Rating, Ves = OV ALL |" _ [= [1000 | A | Vos = Max. Rating x 0.8, Ves = OV, Te = 125C loon = On-State Drain Current @ IRF830R | 45 _ _ A heen . Vos > Ipient X Rosion max. Vas = 10V 2R inressrn| 4 | | A Roston Static Drain-Source On-State IRF83OR; 13 15 Q Resistance @ ines IA Vos = 10V, Io = 2.5A inFes3sR| ~ | 19 | 20 | 2 Qte Forward Transconductance @ ALL 25 3.25 - S$(O)_| Vos > lbion X Rostonmax., lo = 2.5A Cras Input Capacitance ALL = 600 = pF _| Ves = OV, Vos = 25V, f= 1.0 MHz Coss__ Output Capacitance ALL =- 100 = PF | See Fig. 10 Cre Reverse Transfer Capacitance ALL _ 30 pF taton) Turn-On Delay Time ALL _ al 30 ns Voo = 225V, lo = 2.5A, Za = 15 t Rise Time ALL = = 30 ns See Fig. 17 tatom Turn-Off Delay Time ALL _ 55 ns (MOSFET switching times are essentially tr Fall Time ALL _ _ 30 ns independent of operating temperature.) Qs Tota! Gate Charge ALL _ 22 39 nc Vas = 10V, lp = 6.0A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Q Gate-Source Charge ALL 1 _ nc essentially independent of operating RATT leet temperature.) Qea Gate-Drain (Miller) Charge ALL _ HW _ nc Lo Internal Drain Inductance _ 3.6 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL 45 nH | Measured from the inductances. drain lead, 6mm (0.25 6 in.) from package to LO center of die. Ls Internal Source Inductance ALL - 75 - nH Measured from the 6g source lead, 6mm us (0.25 in.) from 5 package to source sce aac bonding pad. Thermal Resistance RuJC__ Junction-to-Case ALL. = _ 1.67 | C/W RmCS Case-to-Sink ALL _ 1.0 _ C/W | Mounting surface flat, smooth, and greased. RuJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF830R} __ _ 45 A Modified MOSFET symbol (Body Diode) IRF831R . showing the integral > IRF832R 40 A reverse P-N junction rectifier. IRF833R | ~ : \sm Pulse Source Current IRF830R;} __ _ 18 A s (Body Diode) @ IRF831R IRF832R vacs-a20se inFes3R| | | 6 | A Vsp Diode Forward Voltage @ IRF830R| _ = = = IRF831R 1.6 Vv Te = 25C, Is = 4.5A, Vas = OV IRF8&32R = = = IRF833R _ 1.5 Vv Te = 25C, Is = 4.0A, Vas = OV te Reverse Recovery Time ALL. _- 800 _ ns Ta = 150C, lr = 4.5A, die/dt = 100A/us_ Qar Reverse Recovered Charge ALL = 46 _ uC Ta = 150C, le = 4.5A, dle/dt = 100A/us ton Forward Turn-on Time ALL intrinsic turn-on time is negligibie. Turn-on speed is substantially controlled by Ls + Lo. @ Ts = 25C to 150C. @ Pulse Test: Pulse width = 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = SOV, starting Ty = 25C, L = 26mH, Ros = 25Q, Ipenk = 4.5A. See figures 15, 16. 6-158Rugged Power MOSFETs IRF830R, IRF831R, IRF832R, IRF833R Mus Vos > 'dten) * Raston) max. Ty 91259C 1 Ty = 250C Ty? 55C ip. DRAIN CURRENT (AMPERES! Ip. DRAIN CURRENT (AMPERES) 0 100 200 300 0 1 2 3 5 6 ? Vos. DRAIN. TO-SUUACE VOLTAGE (VOLTS) Vg. GATE TO SOURCE VOLTAGE {VOLTS} Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics IN 1S LIMITED BY Rosion) ip. DRAIN CURRENT (AMPERES) Te + 25C Ty= 150C MAX Ric 167 Ww PULSE 3A aise bot 2A 0 2 4 5 a 10 10 2 5 0 2 $0 100 200500 Vps. ORAIN-TO-SGUACE VOLTAGE (VOLTS) Vpg. ORAIN-TO-SQURCE VOLTAGE (VOLTS) Ig. DRAIN CURRENT (AMPERES) Fig. 3 Typical Saturation Characteri: Fig. 4 Maximum Safe Operating Area " F 0.05 SINGLE PULSE 1, OUTY FACTOR, D AL THERMAL IMPEDANCE) 2 THERMAL IMPEDANCE (PER UNIT) 2. PER UNIT BASE = Ringe 1.67 OEG. CW, 3. Tym Te Pom 2rnuclt. 0.02 Zinaclt/ Rinse. NORMALIZED EFFECTIVE TRANSIENT 0.01 ws 2 5 oh 2 5 ws 2 5 wm? 2 5 wl 2 5 100 (2 5 9 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-159Rugged Power MOSFETs IRF830R, IRF831R, IRF832R, IRF&33R 102 Ty = 150C Ty = 125C 10 5 Fry = 150C gis. TRANSCONDULTANCE iSiEMENS) Ipp. REVERSE DRAIN CURRENT {AMPERES} Vos ~ 'pion) * Ros(an} max us PULSE Ty = 259 10 0 1 2 3 a 5 0 1 2 3 4 Ip. ORAIN CURRENT (AMPERES) Vsp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 22 3 w af 5 z $ B z z Zz rd 2 Bs 14 a oa ind oA =N gn o> 2q 3 = z a Se es 32 22 10 = 2 = z a z z = as Vgg = 10V g e (p= 1.54 a > a 02 -40 0 40 80 120 160 -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Vgs*0 ft 1 MHz Cigg * Cg, + Cog, Coe SHORTED Cress = Cogs 1600 os * 10v \ Vos 260V 2 Cop Ogg Coss = Cos * Te + Cog 1200 =Cqs + Cog a00V 800 C, CAPACITANCE (pF) 400 Ves. GATE-TO-SOURCE VOLTAGE (VOLTS) Ip =6A FOR TEST CIACUIT SEE FIGURE 18 Q 10 20 HN 40 50 a 8 16 24 32 40 Vg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE inC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-160Rugged Power MOSFETs IRF830R, IRF831R, IRF832R, IRF833R Agsion) MEASURED WITH CURRENT PULSE OF 2.0us DURATION, INITIAL Ty = 25C, (HEATING EFFECT OF 2.0 us PULSE 1S MINIMAL) > Veg * tov. y vgs > 20v J 3 (RF832A, 839A \ a Rostany. ORAIN TO-SOURCE ON RESISTANCE (OHMS) we Ip. ORAIN CUARENT (AMPERES) 1 a a 10 15 20 28 2 50 15 100 125 (50 Ip, DRAIN CURRENT {AMPERES} Tc. CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK I, Vogt 10 i fre] Res Pp POWER DISSIPATION WATTS! & 92C- 42659 Fig. 15 Unciamped Energy Test Circuit Te, CASE TEMPERATURE (CC) Fig. 14 Power Vs. Temperature Derating Curve Yop 225V BYngss PRE LkHe 780 Vo 'p TO SCOPE tp >| Vos poccso " OY) ye l | f ! : | \ | ov -= ; Le 92CS- 42660 a = = Fig. 16 Unciamped Energy Waveforms Fig. 17 Switching Time Test Circuit Vos (ISOLATED SUPPLY) CURRENT REGULATOR Lt 12v T BATTERY Lo SAME TYPE -Yos CURRENT ~ CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-161