2007. 3. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1360
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
AUDIO FREQUENCY AMPLIFIER APPLICATION.
FEATURES
High Voltage : VCEO=-150V.
Low Output Capacitance : Cob=5.0pF(Max.).
High Transition Frequency : fT=120MHz(Typ.)
Complementary to KTC3423.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification O:70 140, Y:120 240
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -150 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-50 mA
Emitter Current IE50 mA
Base current IB-5 mA
Collector Power Dissipation PC1.5 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-150V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE(Note) VCE=-5V, IC=-10mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA - - -0.8 V
Base-Emitter Voltage VBE VCE=-5V, IC=-30mA - - -0.9 V
Transition Frequency fTVCE=-30V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 5.0 pF