Data Sheet, Doc. No. 5SYA 1414-05 08-2013 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage VCES Conditions max Unit VGE = 0 V, Tvj 25 C min 1700 V DC collector current IC TC = 70 C, Tvj = 150 C 3600 A Peak collector current ICM tp = 1 ms 7200 A Gate-emitter voltage VGES Total power dissipation Ptot DC forward current -20 TC = 25 C, Tvj = 150 C V W 3600 A Peak forward current IFRM tp = 1 ms 7200 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 18000 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature IF 20 17800 VCC = 1200 V, VCEM CHIP 1700 V VGE 15 V, Tvj 150 C 1 min, f = 50 Hz 4000 V 175 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg C Mounting torques 1) 2) 2) -50 125 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA 2039 Nm IGBT characteristic values Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 3) 4) Collector cut-off current Gate leakage current Gate-emitter threshold voltage Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 1700 VCE sat IC = 3600 A, VGE = 15 V ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies 3) 4) 2.5 2.8 V 2.7 3.0 3.3 V Tvj = 150 C 3.1 Tvj = 25 C 0.04 1 mA V Tvj = 125 C 30 60 mA Tvj = 150 C 170 mA VCE = 0 V, VGE = 20 V, Tvj = 125 C -500 500 nA IC = 240 mA, VCE = VGE, Tvj = 25 C 5.3 7.3 V nF 9.24 nF Tvj = 25 C 480 ns Tvj = 125 C 510 ns Tvj = 150 C 520 ns Tvj = 25 C 290 ns Tvj = 125 C 310 ns Tvj = 150 C 315 ns Tvj = 25 C 1160 ns Tvj = 125 C 1260 ns Tvj = 150 C 1290 ns Tvj = 25 C 270 ns Tvj = 125 C 300 ns Tvj = 150 C 310 ns VCC = 900 V, IC = 3600 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load Tvj = 25 C 800 mJ Tvj = 125 C 1100 mJ Tvj = 150 C 1200 mJ Tvj = 25 C 1330 mJ Eoff VCC = 900 V, IC = 3600 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load Tvj = 125 C 1600 mJ Tvj = 150 C 1690 mJ ISC tpsc 10 s, VGE = 15 V, VCC = 1200 V, VCEM CHIP 1700 V Tvj = 150 C 10000 A td(on) Short circuit current 2.2 Tvj = 125 C 20.9 Turn-on delay time Turn-off switching energy Tvj = 25 C nF Cres Turn-on switching energy V C Coes Fall time Unit 21 Reverse transfer capacitance Turn-off delay time max 239 Output capacitance Rise time VCE = 1700 V, VGE = 0 V typ tr td(off) tf Eon Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 IC = 3600 A, VCE = 900 V, VGE = -15 V ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 3600 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load VCC = 900 V, IC = 3600 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load Diode characteristic values 5) Parameter Forward voltage Symbol 6) VF Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) IF = 3600 A Irr Recovered charge 5) Conditions VCC = 900 V, IF = 3600 A, VGE = 15 V, RG = 0.6 , CGE = 0 nF, di/dt = 11.5 kA/s L = 50 nH, inductive load Erec typ max Unit Tvj = 25 C min 1.85 2.2 V Tvj = 125 C 1.95 2.3 V Tvj = 150 C 1.9 V Tvj = 25 C 2030 A Tvj = 125 C 2340 A Tvj = 150 C 2500 A Tvj = 25 C 1000 C Tvj = 125 C 1560 C Tvj = 150 C 1820 C Tvj = 25 C 900 ns Tvj = 125 C 1230 ns Tvj = 150 C 1320 ns Tvj = 25 C 710 mJ Tvj = 125 C 1080 mJ Tvj = 150 C 1260 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case max Unit Rth(j-c)IGBT 0.007 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.012 K/W IGBT thermal resistance 2) case to heatsink Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.018 K/W 8 nH Diode thermal resistance case to heatsink min CTI Module stray inductance L CE Resistance, terminal-chip 400 RCC'+EE' TC = 25 C 0.055 TC = 125 C 0.075 TC = 150 C 0.080 m For detailed mounting instructions refer to ABB Document No. 5SYA 2039 Mechanical properties 7) Parameter Symbol Dimensions LxWxH Conditions min Typical da according to IEC 60664-1 and EN 50124-1 Term. to base: 23 Term. to term: 19 Surface creepage distance ds according to IEC 60664-1 and EN 50124-1 Term. to base: 33 Term. to term: 32 Mass m Package and mechanical properties according to IEC 60747 - 15 3 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 typ 190 x 140 x 38 Clearance distance in air 7) typ 2) Comparative tracking index 2) Conditions max Unit mm mm mm 1380 g Electrical configuration 9 7 5 8 6 4 3 2 1 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 7200 7200 VCE = VGE 6000 6000 25 C 4800 125 C IC [A] IC [A] 4800 3600 150 C 2400 3600 2400 150 C 25 C 1200 1200 125 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 8 9 VCE [V] Fig. 1 10 11 12 13 14 15 VGE [V] Fig. 2 Typical on-state characteristics, chip level 7200 Typical transfer characteristics, chip level 7200 Tvj = 25 C 6000 6000 19 V 17 V 4800 4800 17 V IC [A] IC [A] 19 V 3600 15 V 15 V 13 V 3600 11 V 9V 13 V 2400 2400 11 V 9V 1200 1200 0 0 Tvj = 150 C 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 1 2 3 4 VCE [V] Fig. 4 Typical output characteristics, chip level 5 6 6 8 VCC = 900 V VGE = 15 V RG = 0.6 ohm L = 50 nH 5 VCC = 900 V IC = 3600 A VGE = 15 V L = 50 nH 7 6 Eon 4 Eon, Eoff [J] Eon, Eoff [J] 5 3 2 3 Eon Eoff 4 Eoff 2 1 1 Tvj = 125 C Tvj = 150 C 0 Tvj = 125 C Tvj = 150 C 0 0 1200 2400 3600 4800 6000 7200 0 1 IC [A] Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 4 5 Typical switching energies per pulse vs. gate resistor 10 VCC = 900 V IC = 3600 A VGE = 15 V Tvj = 125 C L = 50 nH td(off) 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 3 RG [ohm] 10 td(on) tf 0.1 td(off) td(on) 1 tr tr VCC = 900 V VGE = 15 V RG = 0.6 ohm Tvj = 125 C L = 50 nH 0.01 0 1200 2400 3600 4800 6000 tf 0.1 7200 0 IC [A] Fig. 7 2 Typical switching times vs. collector current 6 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 1 2 3 RG [ohm] Fig. 8 Typical switching times vs. gate resistor 4 5 20 1000 Cies VCC = 900 V 15 100 VGE [V] VCC = 1300 V C [nF] Coes 10 10 Cres 5 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 3600 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 Vce[V] 25 30 Fig. 10 Typical capacitances vs. collector-emitter voltage 2.5 VCC 1200 V, Tvj = 150 C VGE = 15 V, RG = 0.6 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 chip module 0.0 0 500 1000 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 1500 0 35 2000 5 10 Qg [C] Typical gate charge characteristics 15 20 3000 2500 VCC = 900 V VGE = 15 V RG = 0.6 ohm L = 50 nH 500 Tvj = 125 C Tvj = 150 C 0 0 1200 2400 3600 4800 6000 1000 500 Tvj = 125 C Tvj = 150 C 0 2 7200 3 4 5 6 7 8 9 10 11 12 13 14 di/dt [kA/s] IF [A] Fig. 12 RG = 1.5 ohm Erec RG = 0.47 ohm 1000 1500 Qrr RG = 0.6 ohm Erec RG = 2.2 ohm 1500 2000 RG = 4.7 ohm Qrr Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] 2000 Irr RG = 0.83 ohm Irr RG = 1.0 ohm VCC = 900 V IF = 3600 A L = 50 nH 2500 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt 7200 VCC 1200 V di/dt 14 kA/s Tvj = 150 C L = 50 nH 7200 25 C 6000 6000 4800 IR [A] IF [A] 4800 125 C 3600 150 C 2400 2400 1200 1200 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 14 3600 Typicial diode forward characteristics chip level 8 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 500 1000 VR [V] Fig. 15 Safe operating area diode (SOA) 1500 2000 0.1 Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE n Z th (j-c) (t) = R i (1 - e-t/ i ) Zth(j-c) Diode 0.01 i 1 IGBT Zth(j-c) IGBT i 1 2 3 4 Ri(K/kW) 5.059 1.201 0.495 0.246 i(ms) 202.9 20.3 2.01 0.52 Ri(K/kW) 8.432 1.928 0.866 0.839 i(ms) 210 29.6 7.01 1.49 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs. time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SYA 2093 Thermal design of IGBT modules 5SYA 2098 Paralleling of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013 DIODE 0.001