© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 2
1Publication Order Number:
NVTFS5C670NL/D
NVTFS5C670NL
MOSFET – Power, Single
N-Channel
60 V, 6.8 mW, 70 A
Features
•Small Footprint (3.3 x 3.3 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•NVTFS5C670NLWF − Wettable Flanks Product
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4) Steady
State
TC = 25°CID70 A
TC = 100°C 49
Power Dissipation
RqJC (Notes 1, 2, 3)
TC = 25°CPD63 W
TC = 100°C 31
Continuous Drain
Current RqJA
(Notes 1 & 3, 4) Steady
State
TA = 25°CID16 A
TA = 100°C11
Power Dissipation
RqJA (Notes 1, 3)
TA = 25°CPD3.2 W
TA = 100°C 1.6
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 440 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS68 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 3.6 A)
EAS 166 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 3) RqJC 2.4 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA 47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
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V(BR)DSS RDS(on) MAX ID MAX
60 V
6.8 mW @ 10 V
70 A
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
10 mW @ 4.5 V
(Note: Microdot may be in either location)
1
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
N−Channel
D (5 − 8)
S (1, 2, 3)
G (4)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NVTFS5C670NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
27 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 10
mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 50 mA1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−4.7 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 35 A 5.6 6.8
mW
VGS = 4.5 V ID = 35 A 8.0 10
Forward Transconductance gFS VDS = 15 V, ID = 35 A 82 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
1400
pF
Output Capacitance COSS 690
Reverse Transfer Capacitance CRSS 15
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 35 A 9.0 nC
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 35 A 20 nC
Threshold Gate Charge QG(TH)
VGS = 10 V, VDS = 48 V; ID = 35 A
2.5
nC
Gate−to−Source Charge QGS 4.5
Gate−to−Drain Charge QGD 2.0
Plateau Voltage VGP 3.1 V
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 48 V,
ID = 35 A, RG = 2.5 W
11
ns
Rise Time tr60
Turn−Off Delay Time td(OFF) 15
Fall Time tf4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 35 A
TJ = 25°C 0.9 1.2
V
TJ = 125°C 0.8
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 35 A
34
ns
Charge Time ta17
Discharge Time tb17
Reverse Recovery Charge QRR 19 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NVTFS5C670NL
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3
TYPICAL CHARACTERISTICS
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
5
13
15
3.5 4.5 5.5 6.5 7.5 8.5 9.5
0
20
40
60
80
100
120
140
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
75553515
10
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
2.6 V
3.0 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 35 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
VGS = 10 V
ID = 35 A
TJ = 125°C
TJ = 85°C
3.4 V
3.8 V
4.5 V VDS = 5 V
TJ = 175°C
6.5 V to
10 V
0
20
40
60
80
100
120
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5254565
9
8
7
6
5
4
10
100
1000
10000
100000
10 20 30 40 50 60
140
7
9
11
NVTFS5C670NL
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4
TYPICAL CHARACTERISTICS
1
10
100
1000
10000
0 102030405060 0
1
2
3
4
5
6
7
8
9
10
02468101214161820
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
VDS (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK, DRAIN CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 48 V
TJ = 25°C
ID = 35 A
QT
QGS
QGD
VGS = 4.5 V
VDS = 48 V
ID = 35 A
td(off)
td(on)
tf
tr
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ(initial) = 100°C
TJ(initial) = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
10
100
1000
1 10 100
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
10
100
1000
0.1
1 10 1000.1
0.1
1
10
100
1E−51E−41E−31E−2
NVTFS5C670NL
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5
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Characteristics
PULSE TIME (sec)
R(t) (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVTFS5C670NLTAG 670L WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5C670NLWFTAG 70LW WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
