DISCRETE SEMICONDUCTORS DATA Sir ES1 series = Sl SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 PHILIPSPhilips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series FEATURES Glass passivated High maximum operating temperature Ideal for surface mount automotive applications Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape e Marking: cathode, date code, type code e Easy pick and place. LIMITING VALUES DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode ae Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VrrM repetitive peak reverse voltage ES1A - 50 Vv ES1B - 100 Vv ES1C - 150 Vv ES1D - 200 Vv Vr continuous reverse voltage ES1A - 50 Vv ES1B - 100 Vv ES1C - 150 Vv ES1D - 200 Vv Veams root mean square voltage ES1A - 35 Vv ES1B - 70 Vv ES1C - 105 Vv ES1D - 140 Vv lF(AV) average forward current averaged over any 20 ms period; - 1 A Tip = 120 C; see Fig.2 lesm non-repetitive peak forward current | t= 8.3 ms half sine wave; - 25 A Tj = 25 C prior to surge; VR 5 VRRMmax Tstg storage temperature 65 +175 C Tj junction temperature See Fig.3 65 +175 C 2000 Feb 14Philips Semiconductors Product specification SMA ultra fast low-loss - ES1 series controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Ve forward voltage lr = 1 A; see Fig.4 - 1.1 Vv IR reverse current Vr = VarMmax; See Fig.5 - 5 HA Vr = VarMmax; 1j = 165 C; see Fig.5 - 100 HA ter reverse recovery time when switched from Ir = 0.5 Ato IR = 1 A; |- 25 ns measured at Ip = 0.25 A; see Fig.9 Cq diode capacitance Va =4V; f = 1 MHz; see Fig.6 19 - pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rth j-tp thermal resistance from junction to tie-point; see Fig.7 27 K/W Rih ja thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2Os3 printed-circuit board, 0.7 mm thick; thickness of copper 235 um. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper >40 um. For more information please refer to the General Part of associated Handbook. 2000 Feb 14 3Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series GRAPHICAL DATA MCD821 2 IF(AV) _~ (A) 1 0.5 V \ 0 40 80 120 160 200 Tip (C) Va = Varmmax; 5 = 0.5; a = 1.57. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MBK455 200 on 100 3 100 VR (%VRmax) Device mounted as shown in Fig.8. Solid line: AlsOg printed-circuit board. Dotted line: epoxy printed-circuit board. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. MCD790 10-1 10-2 10-3 7) =25C. Fig.4 Forward current as a function of forward voltage; typical values. 102 MCD804 10 Tj = 165 C 0 20 40 60 80 100 VR (%VRmaw) Fig.5 Reverse current as a function of reverse voltage; typical values. 2000 Feb 14Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series MCD799 102 f= 1 MHz; Tj = 25 C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. MBL 120 102 2th j-tp (KW) 1 10 102 108 | 104 p (ms) Fig.7 Transient thermal impedance as a function of pulse width. 45 Tr 50 02.5 y _ Le 1.25 MSB213 Dimensions in mm. Material: AlpO3 or epoxy-glass. Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14Philips Semiconductors Product specification SMA ultra fast low-loss - ES1 series controlled avalanche rectifiers DUT IF a (A) wr nad + 0.575 102 | 25V tir , 1o[| Qe 0 a 0.25 -}----~\-------- A ( , got+------#----------- MAMO57 Input impedance oscilloscope: 1 MQ, 22 pF; t, < 7 ns. Source impedance: 50 Q; t < 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6Philips Semiconductors Product specification SMA ultra fast low-loss - ES1 series controlled avalanche rectifiers PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors $0D124 ait H | < D ~ | j | Vv | A | AY y \ ' | ae $___________ Q i i E b ' t | 0 2.5 5mm L l l l l l l l l l J scale DIMENSIONS (mm are the original dimensions) UNIT A Ay b c D E H Q 2.3 1.6 4.5 2.8 5.5 3.3 mm | a0 | O] 14 | F | 43 | 24 | 5a | 27 Note 1. The marking band indicates the cathode. REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SoD124 DO-214AC ae 99-10-22 2000 Feb 14 7