ay . K7YvYA4/Transistors 2SB1085A 2SB1085 LESEY PIVTU-His PNP YUAY hI Y AS 15. A7kS 77380 /Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor tik 447234 / Dimensions (Unit : mm) 1) SiH t & S (BVceo= 160V), 2) ASOM TEU. 3.0202 emt ae, 3) HPS, Copp evr, a ES | S| Wy ~ 4) 28D1562AE 1+ TU CHS. t ; ly : @ Features eit , 3, SF Wf Talents : 1) High breakdown voltage: * I 0.8201 BVceo= 160V 2,54 Tt 2.54 0.48+0.1 2.6 2) Wide ASO. 3) High transition frequency and small 0 Base output capacitance. hort (3) Emitter. 4) Complementary pair with 2SD1562A. TO-220 @ MHBATK / Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit ILV74-N-2RBE Vcso 160 v ALVIS-Tiyshse VcEO 160 Vv Tivya-N-Z2RMSE VEBO 5 Vv 1.5 A ~ ALIAS Io 3.0 A (Pulse) 20 W (Tc=25C) BUI SIBRK Pc 1.5 W (Ta=25C) Raa Tj 150 c Ripe ow Tstg 55~150 C e@ SR / Electrical Characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions IU98+-LS y SRKBE BVceo | 160 | - Vi | i=1mA ALIS + N-ZBRSE BVcgeo | 160 - _ V Ic =S5OKA Livys+--A72BKEE BVesBo 5 - V le =50HA ALISL eMER lcBo - - 1.0 | HA Vep =120V Liye Loman leBo _ _ 1.0 | HA Ven =4V AV972-Liy3Rnee VcE (sat) _ - 2 I/Ip=1A/0.1A A-A+ Livy 2MBE VBE (sat) - - 15 I/IB=1A/0.1A ARS Sex re 60 _ 200 _ Voce /Ic=5V/0.1A FSB fr - 50 - MHz | Vce =5V, le =0.1A Hee Cop _ 30 pF Vos =10V, le=0A, f=1MHz hre {BIC KH) FRO DICPMLEF. Item D E hre 60~120 100~ 200 244