A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 5.0 mA VGS = 0 V 65 V
IDSS VDS = 28 V VGS = 0 V 2.0 mA
IGSS VDS = 0 V VGS = 40 V 1.0 µ
µµ
µA
VGS(th) ID = 25 mA VDS = 10 V 1.0 3.0 6.0 V
gfs ID = 250 mA VDS = 10 V 250 400 mmhos
Ciss
Coss
Crss
VDS = 28 V VGS = 0 V f = 1.0 MHz 24
5.5 25 pF
NF VDS = 28 V ID = 0.5 A f = 150 MHz 1.0 dB
Gps
η
ηη
ηVDD = 28 V Pout = 15 W f = 150 MHz
IDQ = 25 mA 12
50 16
60 dB
%
ψ
ψψ
ψVDD = 28 V Pout = 15 W f = 150 MHz
IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES NO DEGRADAT ION IN OUTPUT PO WER
RF POWER FIELD-EFFECT TRANSISTOR
MRF136
DESCRIPTION:
The ASI MRF136 is a N-Channel
Enhancement MOSFET, Designed for
Wideband Larg e Signal Amplifier
Applications up to 400 MHz.
MAXIMUM RATINGS
ID2.5 A
VDSS 65 V
PDISS 50 W @ TC = 25 °C
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 3.6 °C/W
PACKAGE STYLE .380 4L FLG
1 = DRAIN 2 = GATE
3 & 4 = SOURCE
