1/13November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
TYPE VDSS RDS(on) IDPw
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
900 V
900 V
900 V
900 V
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
3A
3A
3A
3A
90 W
25 W
90 W
90 W
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK90Z P3NK90Z TO-220 TUBE
STP3NK90ZFP P3NK90ZFP TO-220FP TUBE
STD3NK90ZT4 D3NK90Z DPAK TAPE & REEL
STD3NK90Z-1 D3NK90Z IPAK TUBE
TO-220 TO-220FP
123
13
DPAK
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
(
) Pulse width limited by safe operating area
(1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤V(BR)DSS,T
j≤T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP3NK90Z STP3NK90ZFP STD3NK90Z
STD3NK90Z-1
VDS Drain-source Voltage (VGS =0) 900 V
VDGR Drain-gate Voltage (RGS =20kΩ)900 V
VGS Gate- source Voltage ± 30 V
IDDrain Current (continuous) at TC= 25°C 3 3 (*) 3 A
IDDrain Current (continuous) at TC= 100°C 1.89 1.89 (*) 1.89 A
IDM (
)Drain Current (pulsed) 12 12 (*) 12 A
PTOT Total Dissipation at TC= 25°C 90 25 90 W
Derating Factor 0.72 0.2 0.72 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V
Tj
Tstg Operating Junction Temperature
Storage Temperature -55to150 °C
TO-220 TO-220FP DPAK
IPAK
Rthj-case Thermal Resistance Junction-case Max 1.38 5 1.38 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 3A
E
AS Single Pulse Avalanche Energy
(starting Tj= 25 °C, ID=I
AR,V
DD =50V) 180 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown
Voltage Igs=± 1mA (Open Drain) 30 V
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STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=1mA,V
GS = 0 900 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS = Max Rating
VDS = Max Rating, TC= 125 °C 1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS = ± 30 V ±10 µA
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D=50µA 3 3.75 4.5 V
RDS(on) Static Drain-source On
Resistance VGS =10V,I
D= 1.5 A 4.1 4.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V
,I
D= 1.5 A 2.7 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V,f=1MHz,V
GS = 0 590
63
13
pF
pF
pF
Coss eq. (3) Equivalent Output
Capacitance VGS =0V,V
DS =0Vto400V 34 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD =450V,I
D= 1.5 A
RG= 4.7ΩVGS =10V
(Resistive Load see, Figure 3)
18
7ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =720V,I
D=3A,
V
GS =10V 22.7
4.2
12
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-off Delay Time
Fall Time VDD = 720 V, ID= 1.5 A
RG=4.7ΩV
GS =10V
(Resistive Load see, Figure 3)
45
18 ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 450V, ID=3A,
R
G=4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
14.5
15
16
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 3
12 A
A
VSD (1) Forward On Voltage ISD = 3 A, VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs
VDD =100V,T
j=150°C
(see test circuit, Figure 5)
510
2.2
8.7
ns
µC
A
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
4/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220/DPAK/IPAK Thermal Impedance For TO-220FP
5/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Transconductance
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
6/13
Maximum Avalanche Energy vs Temperature
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
7/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
8/13
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
L5
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
10/13
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0o8o0o0o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
11/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
DL
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (I PAK) MECHANI CAL DATA
0068771-E
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
12/13
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions
areinmillimeters
All dimensions are in millimeters
13/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsi bility for the
consequences of use o f su ch informat ion nor for any infri ngement of pat ents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. S pecifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
prev iously supplied. STM icroelect roni cs produ cts are not authorized for use as c ritical components in life support devices or
systems without express written approval of STMicroelectronics.
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