+ = n rrr ti SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS FEATURES e High Breakdown Voltage to 70 Voits e Available in Chips, Glass Package Or Double Slug Melf Package e 1N5711 Available in JAN, JANTX and JANTXV e Packages Metallurgically Bonded MAXIMUM RATINGS Operating Temperatures ............ ~65C to + 150C Storage Temperatures .............. -65C to + 150C Power Dissipation ................... 250 mW @ 25C Power Derating .............006. 2 mW/C above 25C ELECTRICAL SPECIFICATIONS AT 25C eal et CORPORATION CD711 1N5711 CDLL5711 CD5712 DSB5712 CDLL5712 CD2810 DSB2810 CDLL2810 CDLL6263 DESCRIPTION This family of devices are silicon Schottky barrier diodes with sil- icon dioxide passivated junctions to achieve high breakdown voltages and low leakages. These devices used in either chips, low cost glass packages or low cost surface mount leadless MELF packages are useful for high level detectors, mixers, pico- second switching or gating, sampling and wave shaping cir- cuits. MINIMUM MAXIMUM MINIMUM MAXIMUM BREAKDOWN FORWARD FORWARD MAXIMUM REVERSE CAPACITANCE @ VOLTAGE VOLTAGE CURRENT LEAKAGE CURRENT V_ = OVOLTS, TYPE Vv, = 1 VOLT f = 1.0 MHz NUMBER F Ver @ 10 mA Ve@tmA le Ip @ Vr Cr VOLTS VOLTS MILLIAMPS NA | _-voLTs PICO FARADS CHIPS CD2810 20 0.41 35 100 15 12 CD5711 70 0.41 15 200 50 2.0 CDS712 20 0.41 36 150 16 12 AXIAL LEAD GLASS PACKAGE DSB2810 20 0.41 35 100 15 2.0 IN5711 70 0.41 15 200 50 2.0 DSBS712 20 0.41 35 150 16 2.0 MELF PACKAGE CDLL2810 0.41 CDLL5711 0.41 CDLL5712 0.441 CDLL6263 0.41 Notes: 1. Effective Minority Carrier Lifetime (1) is 100 Pico Seconds. 2. These devices manufactured by CDi, USA. 3. Other packages available upon request. TYPICAL CHARACTERISTICS 10,000 7: E 125 E = C c 5 = = 1000 > 100 e E F 8 a C 9 10 i 100 s oe 8 ee] 25 2 25C | Ta (C) hod oe c = 10 as 100C x3 3 150C 3 N24 6 8 10 12 10954015 20 25 30 Ve Forward Voltage (V) Vp Reverse Voltage (V) l- Forward Current (mA) O19 2 4 6 8 1.0 12 Ve Forward Voltage (V) (Pulsed) Figure 1. I-V Curve Showing Figure 2. DSB5712 and DSB2810 Figure 3. I-V Curve Showing Typical Forward Voltage Variation Typcal Variation of Reverse Current Typical Forward Voltage Variation with Temperature for (Ip) vs. Reverse Voltage (V_) at with Temperature for Schottky 0S85712 and DSB2810 Various Temperatures. Diode 1N5S711 Schottky Diodes. CHIP OUTLINE 100, z }o15 MiLSm Z49 4] m eb ft ae ee = 5 400 \ Wt |} PW a Sa ff a x , 0SB5712 5 ee Ye el 2 DSB2810 2 ep tye ey g 100 25 5 { ie 3 5 10 = itt ta va a i va ot that ta ; 1 1 BACKSIDE IS CATHODE = Ta (C) METALLIZATION: 19 10 20 3 4 SO 60 Un 1.0 10 100 1 (Anode) .......-...00. Al Va Reverse Voltage (V) le Forward Current (mA) Back: (Cathode) ............ Au (Pulsed) AL THICKNESS ........ 12000 Kin hd 4. varies rt Variation Roxick 5. Typical oyna . everse Current (Ip) vs. esistance (Rp) vs. Forw GOLD THICKNESS ...... 3000 A Min Reverse Voltage (V,) at Various Current (Ie) CHIP THICKNESS ....... 15 Mils Max Temperatures. AXIAL LEAD GLASS OUTLINE MELF OUTLINE t CASE: Hermetically sealed CASE: DO-213AA, Hermeticall * .063 / 067 ' y = / an { glass case per MIL-S-19500/444, 1.60/ er sealed glass case. (MELF, SOD-80, . . DO-35 , . LL34) LEAD MATERIAL: Copper ciad LEAD FINISH: Tin/Lead steel. THERMAL RESISTANCE: 100 LEAD FINISH: Tin Plate C (Typical) junction to THERMAL RESISTANCE: 250 END CAP C/W (ypical) junction to ambient, | 1301.1 POLARITY: Cathode end is POLARITY eerie POLARITY: Cai end is 3.30 / 3.70 banded. (CATHODE) t banded. 016/022 | WEIGHT: 0.05 grams (Typical) 1.000 WEIGHT: 0.2 grams. 0.414 / 0.55 MOUNTING POSITION: Any. 0.014 / 0.020 pip MIN MOUNTING POSITION: An 100 036/051 C'All 25.400 v. rey REF + cot ~ 4 ~F 005 All dimensions in | All dimensions in NCH 975 Stewart Drive Sunnyvale, California 94086 408-737-8181 FAX: 408-733-7645 Date: 6-15-90