AO3414
20V N-Channel MOSFET
Features
VDS = 20V
ID= 3A (VGS = 4.5V)
RDS(ON) < 62mΩ(VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
General Description
The AO3414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
70 90
100 125
R
θJL
63 80
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
Maximum Junction-to-Ambient
A
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
P
D
W
T
A
=70°C
°C/W
°C
1.4
0.9
-55 to 150
Steady-State °C/W
16Pulsed Drain Current
B
A
Drain-Source Voltage 20
Continuous Drain
Current
A
T
A
=25°C
T
A
=70°C
±8Gate-Source Voltage
I
D
3
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
2.5
Maximum UnitsParameter
Features
VDS = 20V
ID= 3A (VGS = 4.5V)
RDS(ON) < 62mΩ(VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
General Description
The AO3414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Rev 7: July 2010 www.aosmd.com Page 1 of 5
AO3414
Symbol Min Typ Max Units
BV
DSS
20 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
0.4 0.7 1 V
I
D(ON)
16 A
51 62
T
J
=125°C 68 85
58 70 mΩ
68 85 mΩ
g
FS
11 S
V
SD
0.7 1 V
I
S
2 A
C
iss
260 320 pF
C
oss
48 pF
C
rss
27 pF
R
g
3 4.5 Ω
Q
g
2.9 3.8 nC
Q
gs
0.4 nC
Q
gd
0.6 nC
t
D(on)
ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=3A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
V
GS
=2.5V, I
D
=2.8A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=3A
V
GS
=1.8V, I
D
=2.5A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge V
GS
=4.5V, V
DS
=10V, I
D
=3A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
Rev 7: July 2010 www.aosmd.com Page 2 of 5
t
D(on)
ns
t
r
3.2 ns
t
D(off)
21 ns
t
f
3 ns
t
rr
14 19 ns
Q
rr
3.8 nC
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=3A, dI/dt=100A/µs
I
F
=3A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=5V, V
DS
=10V, R
L
=3.3Ω,
R
GEN
=6Ω
Turn-Off Fall Time
Turn-On DelayTime
A: The value of RθJA is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 7: July 2010 www.aosmd.com Page 2 of 5
AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=1.5V
2V
2.5V
4.5V
0
4
8
12
16
0 0.5 1 1.5 2 2.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
=5V
40
60
80
100
120
0
3
6
9
12
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS=1.8V
V
GS
=2.5V
V
GS
=4.5V 0.8
1
1.2
1.4
1.6
-
50
-
25
0
25
50
75
100
125
150
175
Normalized On-Resistance
VGS=1.8V
ID=2.5A
VGS=4.5V
ID=3A
VGS=2.5V
ID=2.8A
Rev 7: July 2010 www.aosmd.com Page 3 of 5
12
0
4
8
12
16
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=1.5V
2V
2.5V
4.5V
0
4
8
12
16
0 0.5 1 1.5 2 2.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
=5V
40
60
80
100
120
0 3 6 9 12
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=1.8V
V
GS
=2.5V
V
GS
=4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25
°
125
°
C
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=1.8V
ID=2.5A
VGS=4.5V
ID=3A
VGS=2.5V
ID=2.8A
40
60
80
100
120
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=3A
25
°
125
°
C
Rev 7: July 2010 www.aosmd.com Page 3 of 5
AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
C
oss
C
rss
1
10
100
1000
Power (W)
VDS=10V
ID=3A
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
ID(Amps)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
Rev 7: July 2010 www.aosmd.com Page 4 of 5
12
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
C
oss
C
rss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
VDS=10V
ID=3A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
Rev 7: July 2010 www.aosmd.com Page 4 of 5
AO3414
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Rev 7: July 2010 www.aosmd.com Page 5 of 5
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev 7: July 2010 www.aosmd.com Page 5 of 5