Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A
IDM Pulsed Drain Current -24
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
04/30/03
Parameter Max. Units
RθJA Maximum Junction-to-Ambient100 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
IRLML5203
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
lUltra Low On-Resistance
l P-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLow Gate Charge
PD - 93967A
VDSS RDS(on) max (mW) ID
-30V 98@VGS = -10V -3.0A
165@VGS = -4.5V -2.6A
S
G1
2
D3
Micro3TM
PROVISIONAL
IRLML5203
2www.irf.com
PROVISIONAL
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, I S = -1.3A, VGS = 0V
trr Reverse Recovery Time ––– 17 26 ns TJ = 25°C, IF = -1.3A
Qrr Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-24



-1.3
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, I D = -1mA
––– ––– 98 VGS = -10V, ID = -3.0A
––– ––– 165 VGS = -4.5V, ID = -2.6A
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.1 ––– ––– S VDS = -10V, ID = -3.0A
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 1 00 VGS = 20V
QgTotal Gate Charge –– – 9.5 14 I D = -3.0A
Qgs Gate-to-Source Charge ––– 2.3 3 .5 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.6 2 .4 V GS = -10V
td(on) Turn-On Delay Time ––– 12 –– – V DD = -15V
trRise Time ––– 18 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 88 –– – R G = 6.0Ω
tfFall Time ––– 52 ––– VGS = -10V
Ciss Input Capacitance ––– 510 ––– V GS = 0V
Coss Output Capacitance ––– 71 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRLML5203
www.irf.com 3
PROVISIONAL
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
3.0A
0.01
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
2.0 3.0 4.0 5.0 6.0 7.0
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Volta ge (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRLML5203
4www.irf.com
PROVISIONAL
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 4 8 12 16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.0A
V =-15V
DS
V =-24V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 100
OPERATI ON IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-S ource Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
IRLML5203
www.irf.com 5
PROVISIONAL
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ecta ngular Pulse Durati on ( sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRLML5203
6www.irf.com
PROVISIONAL
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0 4 8 12 16
-ID , Dr ain Curr ent (A)
0.00
0.10
0.20
0.30
0.40
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = - 10V
VGS = -4.5V
4.0 6.0 8.0 10.0 12.0 14.0 16.0
-VGS, Gate -t o -Source Vol tage (V)
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -3.0A
IRLML5203
www.irf.com 7
PROVISIONAL
Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
10
20
30
Power (W)
-75 -50 -25 025 50 75 100 125 150
TJ , T emperature ( °C )
1.5
2.0
2.5
-VGS(th) , Variace ( V )
ID = -250µA
IRLML5203
8www.irf.com
PROVISIONAL
Dimensions are shown in millimeters (inches)
Micro3TM Package Outline
LEAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - D RAIN
L
3X 3X
C
θ
A1
- C -
B 3X
A
e
e1
0.008 (. 003)
3
12
E
- A -
- B -
D
H
0.20 ( .0 08 ) M A M
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .032 .0 44 0.82 1.11
A1 .001 .004 0. 02 0. 10
B .015 .0 21 0.38 0.54
C .004 .006 0.10 0.15
D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 B ASIC 0.95 BA SI C
E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
L .005 .01 0 0.13 0.25
θ
0° 8° 0° 8°
0.10 (.0 04) M C A S B S
MINIMUM RECOMMENDED FOOTP RINT
0.80 ( .03 1 )
3X
2.00
( .079 )
0.95 ( .0 37 )
2X
0.90
( .035 )
3X
3
3
3
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y 14.5M-19 82.
2. CONTROLLING DIMENSION : INCH.
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
IRLML5203
www.irf.com 9
PROVISIONAL
Part Marking Information
61996
26
24
25
30
28
WE E K
27
WOR K
29
2002
2003
1995
1994
2001
YEAR
B
D
E
C
Y
A
2000
1997
1999
1998
0
8
9
7
D
C
W
B
A
X
Z
Y
04
WE E K
WOR K
02
01
03
2002
2003
1995
1994
YEAR
2001
2
4
5
3
Y
1
W
D
C
B
A
EXAMPLE: THIS IS AN IRLML6302
DAT E CODE EXAMPLE S :
YWW = 9532 = EF
YWW = 9503 = 5C
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Notes : T his part markin
g
information applies to devices produced before 02/26/2001
F1996
52
51
502000
1997
1999
1998
K
H
J
G
X
Z
Y
PART NUMBER
PART NUMBER CODE REFERENCE:
WW = (27-52) IF PRECEDE D BY A LETT ER
DAT E
1C = IRLML6302
1D = IRLML5103
1F = IRLML6401
1G = IRLML2502
1H = IRLML5203
1E = IRLML6402
1A = IRLML2402
1B = IRLML2803
CODE
Micro3TM
29
30
50
WYEAR
A2001 A
B2002 B
C2003 C
D1994 D
X
J
1995
1996
1997
1998
1999
2000
E
F
G
H
K
Y
1995
1996
1997
1998
2000
9
8
7
6
5
PART NUMBER
Y = YE AR
W = WEEK
WORK
WEEK
WORK
A = IRLML 2402
B = IRLML2803
C = IRLML 6302
D = IRLML 5103
PART NUMBER CODE REFERENCE: 25 Y
51 Y
26 Z
52 Z
G = IRLML2502
F = IRLML6401
E = IRLML6402
H = IRLML5203
LOT
CODE
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
WYEAR Y
A2001 1
B2002 2
C2003 3
D1994 4
X
1999
0
W = (27-52) IF PRECEDED BY A LETTER
WEEK
27
28
IRLML5203
10 www.irf.com
PROVISIONAL
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.0 08 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03