WS1103
CDMA Cell 3x3 Power Amplier Module
(824-849 MHz)
Data Sheet
Description
The WS1103 is a CDMA(Code Division Multiple Access)
power amplier module designed for handsets operat-
ing in the 824-849 MHz bandwidth.
The WS1103 features CoolPAM circuit technology that
oers state-of-the-art reliability, temperature stability
and ruggedness.
Digital mode control of CoolPAM reduces current con-
sumption, which enables extended talk time of mobile
devices.
The WS1103 meets stringent CDMA linearity require-
ments to and beyond 28 dBm output power. The
3 mm x 3 mm form factor 8-pin surface mount package is
self contained, incorporating 50 ohm input and output
matching networks.
Features
Excellent linearity
Low quiescent current
High eciency
PAE at 28 dBm: 41.2%
PAE at 16 dBm: 17.7%
8-pin surface mounting package
3 mm x 3 mm x 1.0 mm
Internal 50 ohm matching networks for both RF input
and output
RoHS compliant
Applications
Digital CDMA Cellular
Wireless local loop
Functional Block Diagram
Vcc2 (8)
Vcont (3) Vref (4)
RF
OUTPUT
(7)
DA
INPUT
MATCH
INTER
STAGE
MATCH
OUTPUT
MATCH
MODULE
MMIC
PA
RF
INPUT
(2)
Vcc1 (1)
BIAS CIRCUIT & CONTROL LOGIC
2
Table 1. Absolute Maximum Ratings[1]
Parameter Symbol Min. Nominal Max. Unit
RF Input Power Pin 10.0 dBm
DC Supply Voltage Vcc 0 3.4 5.0 V
Reference Voltage Vref 0 2.85 3.3 V
Control Voltage Vcont 0 2.85 3.3 V
Storage Temperature Tstg -55 +125 °C
Table 2. Recommended Operating Conditions
Parameter Symbol Min. Nominal Max. Unit
DC Supply Voltage Vcc 3.2 3.4 4.2 V
DC Reference Voltage Vref 2.75 2.85 2.95 V
Mode Control Voltage
– High Power Mode
– Low Power Mode
Vcont
Vcont
0
2.0
0
2.85
0.5
3.0
V
V
Operating Frequency Fo 824 849 MHz
Ambient Temperature Ta -30 25 85 °C
Table 3. Power Range Truth Table
Power Mode Symbol Vref Vcont[2] Range
High Power Mode PR2 2.85 Low ~ 28 dBm
Low Power Mode PR1 2.85 High ~ 16 dBm
Shut Down Mode 0 -
Notes:
1. No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
2. High (2.0 – 3.0 V), Low (0.0 V – 0.5 V).
3
Table 4. Electrical Characteristics for CDMA Mode (Vcc = 3.4 V, Vref = 2.85 V, T = 25°C, Zin/Zout = 50 ohm)
Characteristics Symbol Condition Min. Typ. Max. Unit
Operating Frequency Range F 824 849 MHz
Gain Gain_hi High Power Mode, Pout =28 dBm 24 29.5 dB
Gain_low Low Power Mode, Pout = 16 dBm 14 17.5 dB
Power Added Eciency PAE_hi High Power Mode, Pout = 28 dBm 36 41.2 %
PAE_ low Low Power Mode, Pout = 16 dBm 13.6 17.7 %
Total Supply Current Icc_hi High Power Mode, Pout = 28 dBm 450 515 mA
Icc_ low Low Power Mode, Pout = 16 dBm 65 85 mA
Quiescent Current Iq_hi High Power Mode 93 125 mA
Iq_ low Low Power Mode 13 25 mA
Reference Current Iref_hi High Power Mode, Pout = 28 dBm 2 7 mA
Iref_low Low Power Mode, Pout = 16 dBm 3 8 mA
Control Current Icont Low Power Mode, Pout = 16 dBm 0.2 1 mA
Total Current in Power-Down
Mode
Ipd Vref = 0 V 0.2 5 µA
Adjacent
900 kHz oset ACPR1_hi High Power Mode, Pout = 28 dBm -55 -47 dBc
Channel 1.98 MHz oset ACPR2_hi -59 -57 dBc
Power Ratio 900 kHz oset ACPR1_ low Low Power Mode, Pout = 16 dBm -59 -47 dBc
1.98 MHz oset ACPR2_ low -66 -57 dBc
Harmonic Second 2f0 High Power Mode, Pout = 28 dBm -39 -30 dBc
Suppression Third 3f0 -56 -40 dBc
Input VSWR VSWR 2:1 2.5:1
Stability (Spurious Output) S VSWR 6:1, All Phase -60 dBc
Noise Power in Rx Band RxBN -136.5 -132 dBm/Hz
Ru
No Damage
Ruggedness Pout <28 dBm, Pin <10 dBm, All Phase 10:1 VSWR
High Power Mode
4
Characteristics Data (Vcc = 3.4 V, Vref = 2.85 V, T = 25°C, Zin/Zout = 50 ohm)
Figure 4. Adjacent channel power ratio 1 vs. output power
Figure 1. Total current vs. output power Figure 2. Gain vs. output power
Figure 3. Power added eciency vs. output power
Figure 5. Adjacent channel power ratio 2 vs. output power
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20 25 30
Pout (dBm)
Current (mA)
824 MHz
836.5 MHz
849 MHz
10
15
20
25
30
35
0 5 10 15 20 25 30
Pout (dBm)
Gain (dB)
824 MHz
836.5 MHz
849 MHz
0
20
15
10
5
25
30
35
45
40
0 5 10 15 20 25 30
Pout (dBm)
PAE (%)
824 MHz
836.5 MHz
849 MHz
-75
-55
-60
-65
-70
-50
-45
-40
0 5 10 15 20 25 30
Pout (dBm)
ACPR1 (dBc)
824 MHz
836.5 MHz
849 MHz
-75
-80
-85
-55
-60
-65
-70
-50
-45
0 5 10 15 20 25 30
Pout (dBm)
ACPR2 (dBc)
824 MHz
836.5 MHz
849 MHz
5
Evaluation Board Description
Figure 6. Evaluation board schematic
Figure 7. Evaluation board assembly diagram
1Vcc1
2 RF In
3Vcont
4Vref
Vcc2 8
RF Out 7
GND 6
GND 5
Vref
Vcont
RF In
Vcc1 Vcc2
RF Out
C3
100pF
C2
100pF
C5
4.7uF
C1
330pF
C4
4.7uF
0 ohm
R1
1103
PYYWW
AAAAA
6
Figure 8. Package dimensional drawing and pin descriptions (all dimensions are in millimeters)
Package Dimensions and Pin Descriptions
Figure 9. Marking specications
PIN 1 MARK
Manufacturing Part Number
Lot Number
P Manufacturing Info
YY Manufacturing Year
WW Work Week
AAAAA Assembly Lot
1103
PYYWW
AAAAA
7
Peripheral Circuit in Handset
Figure 10. Peripheral circuit
Calibration
Calibration procedure is shown in Figure 11. Two
calibration tables, high mode and low mode respective-
ly, are required for Cool PAM, which is due to gain dier-
ence in each mode. For continuous output power at the
mode change points, the input power should be adjust-
ed according to gain step during the mode change.
Oset Value (Dierence between Rising Point and
Falling Point)
Oset value, which is the dierence between the rising
point (output power where PA mode changes from low
mode to high mode) and falling point (output power
where PA mode changes from high mode to low mode),
should be adopted to prevent system oscillation. 3 to
5 dB is recommended for hysteresis.
Average Current & Talk Time
Probability Distribution Function implies that what is
important for longer talk time is the eciency of low
or medium power range rather than the eciency at
full power. WS1103 idle current is 13 mA and operating
current at 16 dBm is 65 mA at nominal condition. This PA
with low current consumption prolongs talk time by no
less than 30 minutes compared to other PAs.
Figure 11. Calibration procedure Figure 12. Setting of oset between rising and falling power
Figure 13. CDMA power distribution function
TX_AGC
Low Mode High Mode
Min. PWR Falling Rising Max. PWR
Pout
GAIN
Low Mode
High Mode
Falling Rising Pout
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0
700
600
CDG Urban
Conventional PAM Digitally Controlled PAM Cool PAM
CDG Suburban 500
400
300
200
100
0
-50 -40 -30 -20 -10
PA Out (dBm)
0
PDF (%)
CURRENT (mA)
10 20 30
Vcc1
Vcc2
RF IN
RF OUT
Vcont
GND
GND
Vref
Duplexer
TX
FILTER
MSM PA_RO
PA_ON
RF Out
Output Matching Circuit
RF In
WS1103
C1
C8
C7
C6
L1
C2
VBATT
C5
C4
+2.85 V
C 3
NOTES:
• Recommended voltage for Vref is 2.85 V.
• Place C1 near to Vref pin.
• Place C3 and C4 close to pin 1 (Vcc1) and pin 10 (Vcc2). These capacitors can affect the RF performance.
• Use 50 transmission line between PAM and Duplexer and make it as short as possible to reduce conduction loss.
π-type circuit topology is good to use for matching circuit between PA and Duplexer.
Notes:
Recommended voltage for Vref is 2.85 V.
Place C1 near to Vref pin.
Place C3 and C4 close to pin 1 (Vcc1) and pin 8 (Vcc2).
These capacitors can aect the RF performance.
Use 50 W transmission line between PAM and Duplexer and make it
as short as possible to reduce conduction loss.
π-type circuit topology is good to use for matching circuit between
PA and Duplexer.
8
Figure 14. Metallization
Figure 15. Solder mask opening
PCB Design Guidelines
The recommended WS1403 PCB land pattern is shown
in Figure 14 and Figure 15. The substrate is coated with
solder mask between the I/O and conductive paddle to
protect the gold pads from short circuit that is caused by
solder bleeding/bridging.
Stencil Design Guidelines
A properly designed solder screen or stencil is required
to ensure optimum amount of solder paste is deposited
onto the PCB pads.
The recommended stencil layout is shown in Figure 16.
Reducing the stencil opening can potentially generate
more voids. On the other hand, stencil openings larger
than 100% will lead to excessive solder paste smear or
bridging across the I/O pads or conductive paddle to
adjacent I/O pads. Considering the fact that solder paste
thickness will directly aect the quality of the solder
joint, a good choice is to use laser cut stencil composed
of 0.100 mm (4 mils) or 0.127 mm (5 mils) thick stainless
steel which is capable of producing the required ne
stencil outline.
0.1
0.25
0.6
0.4
0.8
0.3 mm ON
0.5 mm PITCH
0.8
0.5
0.7 0.55
1.4
1.325
0.4
0.6 0.5
0.8
1.05
1.1
Figure 16. Solder paste stencil aperture
9
Figure 17. Tape and reel format – 3 mm x 3 mm
Tape and Reel Information
P0
Y
Y
P2 (1)
P10 (3)
D0
DIMENSIONS
NOTATION MILLIMETERS
A0 3.40 ± 0.10
B0 3.40 ± 0.10
K0 1.70 ± 0.10
D0 1.55 ± 0.05
D1 1.60 ± 0.10
P0 4.00 ± 0.10
P1 8.00 ± 0.10
P2 2.00 ± 0.05
P10 40.00 ± 0.20
E 1.75 ± 0.10
F 5.50 ± 0.05
W 12.00 ± 0.30
T 0.30 ± 0.05
X X P1 (2) D1
F (1)
W
A
SECTION X - X
SECTION Y - Y
A0
K0
0.1
R 0.5
R 1.0
DETAIL A
T
B0
1103
PYYWW
AAAAA
F
10
Reel Drawing
Figure 18. Plastic reel format (all dimensions are in millimeters)
11
Table 6. Moisture Classication Level and Floor Life
MSL Level Floor Life (out of bag) at factory ambient = < 30°C/60% RH or as stated
1 Unlimited at = < 30°C/85% RH
2 1 year
2a 4 weeks
3 168 hours
4 72 hours
5 48 hours
5a 24 hours
6 Mandatory bake before use. After bake, must be reowed within the time limit specied on the label
Note:
1. The MSL Level is marked on the MSL Label on each shipping bag.
Handling and Storage
ESD (Electrostatic Discharge)
Electrostatic discharge occurs naturally in the environ-
ment. With the increase in voltage potential, the outlet
of neutralization or discharge will be sought. If the ac-
quired discharge route is through a semiconductor
device, destructive damage will result.
ESD countermeasure methods should be developed and
used to control potential ESD damage during handling in
a factory environment at each manufacturing site.
MSL (Moisture Sensitivity Level)
Plastic encapsulated surface mount package is
sensitive to damage induced by absorbed moisture and
temperature.
Avago Technologies follows JEDEC Standard J-STD 020B.
Each component and package type is classied for
moisture sensitivity by soaking a known dry package at
various temperatures and relative humidity, and times.
After soak, the components are subjected to three
consecutive simulated reows.
The out of bag exposure time maximum limits are
determined by the classication test describe below
which corresponds to a MSL classication level 6 to 1
according to the JEDEC standard IPC/JEDEC J-STD-020B
and J-STD-033.
WS1103 is MSL3. Thus, according to the J-STD-033 p.11
the maximum Manufacturers Exposure Time (MET) for
this part is 168 hours. After this time period, the part
would need to be removed from the reel, de-taped and
then re-baked. MSL classication reow temperature
for the WS1103 is targeted at 260°C +0/-5°C. Figure 19
and Table 7 show typical SMT prole for maximum
temperature of 260 +0/-5°C.
Table 5. ESD Classication
Pin # Name Description HBM CDM Classication
1 Vcc1 Supply Voltage ±2000 V ±200 V Class 2
2 RFIn RF Input ±2000 V ±200 V Class 2
3 Vcont Control Voltage ±2000 V ±200 V Class 2
4 Vref Reference Voltage ±2000 V ±200 V Class 2
5 GND Ground ±2000 V ±200 V Class 2
6 GND Ground ±2000 V ±200 V Class 2
7 RF Out RF Output ±2000 V ±200 V Class 2
8 Vcc2 Supply Voltage ±2000 V ±200 V Class 2
Note:
1. Module products should be considered extremely ESD sensitive.
12
Figure 19. Typical SMT reow prole for maximum temperature = 260 +0/-5°C
TIME
TEMPERATURE
tp
t 25°C TO PEAK
ts
PREHEAT
TL
TP
Tsmax
Tsmin
tL
CRITICAL ZONE
TL TO TP
RAMP UP
RAMP DOWN
25
Table 7. Typical SMT Reow Prole for Maximum Temperature = 260 +0/-5°C
Prole Feature Sn-Pb Solder Pb-Free Solder
Average Ramp-Up Rate (TL to TP) 3°C/sec max 3°C/sec max
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Min to Max) (ts)
100°C
150°C
60-120 sec
150°C
200°C
60-180 sec
Tsmax to TL
- Ramp-Up Rate 3°C /sec max
Time Maintained Above:
- Temperature (TL)
- Time (TL)
183°C
60-150 sec
217°C
60-150 sec
Peak Temperature (Tp) 240 +0/-5°C 260 +0/-5°C
Time Within 5°C of Actual Peak Temperature (tp) 10-30 sec 20-40 sec
Ramp-Down Rate 6°C /sec max 6°C /sec max
Time 25°C to Peak Temperature 6 min max. 8 min max.
13
Storage Condition
Packages described in this document must be stored
in sealed moisture barrier, antistatic bags. Shelf life in a
sealed moisture barrier bag is 12 months at <40°C and
90% relative humidity (RH) J-STD-033 p.7.
Out-of-Bag Time Duration
After unpacking the device must be soldered to the PCB
within 168 hours as listed in the J-STD-020B p.11 with
factory conditions <30°C and 60% RH.
Baking
It is not necessary to re-bake the part if both conditions
(storage conditions and out-of bag conditions) have
been satised. Baking must be done if at least one of the
conditions above have not been satised. The baking
conditions are 125°C for 12 hours J-STD-033 p.8.
CAUTION
Tape and reel materials typically cannot be baked at the
temperature described above. If out-of-bag exposure
time is exceeded, parts must be baked for a longer time
at low temperatures, or the parts must be de-reeled,
de-taped, re-baked and then put back on tape and reel.
(See moisture sensitive warning label on each shipping
bag for information of baking).
Board Rework
Component Removal, Rework and Remount
If a component is to be removed from the board, it is
recommended that localized heating be used and the
maximum body temperatures of any surface mount
component on the board not exceed 200°C. This
method will minimize moisture related component
damage. If any component temperature exceeds 200°C,
the board must be baked dry per 4-2 prior to rework
and/or component removal. Component temperatures
shall be measured at the top center of the package body.
Any SMD packages that have not exceeded their oor life
can be exposed to a maximum body temperature as high
as their specied maximum reow temperature.
Removal for Failure Analysis
Not following the above requirements may cause
moisture/reow damage that could hinder or com-
pletely prevent the determination of the original failure
mechanism.
Baking of Populated Boards
Some SMD packages and board materials are not able
to withstand long duration bakes at 125°C. Examples of
this are some FR-4 materials, which cannot withstand a
24 hr bake at 125°C. Batteries and electrolytic capacitors
are also temperature sensitive. With component and
board temperature restrictions in mind, choose a
bake temperature from Table 4-1 in J-STD 033; then
determine the appropriate bake duration based on the
component to be removed. For additional considerations
see IPC-7711 andIPC-7721.
Derating Due to Factory Environmental Conditions
Factory oor life exposures for SMD packages removed
from the dry bags will be a function of the ambient
environmental conditions. A safe, yet conservative,
handling approach is to expose the SMD packages only
up to the maximum time limits for each moisture
sensitivity level as shown in Table 7. This approach,
however, does not work if the factory humidity or
temperature is greater than the testing conditions of
30°C/60% RH. A solution for addressing this problem
is to derate the exposure times based on the knowledge
of moisture diusion in the component package
materials ref. JESD22-A120). Recommended equivalent
total oor life exposures can be estimated for a range
of humidities and temperatures based on the nominal
plastic thickness for each device.
Table 8 lists equivalent derated oor lives for humidities
ranging from 20-90% RH for three temperatures, 20°C,
25°C, and 30°C.
This table is applicable to SMDs molded with novolac,
biphenyl or multifunctional epoxy mold compounds. The
following assumptions were used in calculating Table 8:
1. Activation Energy for diusion = 0.35eV (smallest
known value).
2. For ≤60% RH, use Diusivity = 0.121exp ( -0.35eV/kT)
mm2/s
(this used smallest known Diusivity @ 30°C).
3. For >60% RH, use Diusivity = 1.320exp ( -0.35eV/kT)
mm2/s
(this used largest known Diusivity @ 30°C).
14
Table 8. Recommended Equivalent Total Floor Life (days) @ 20°C, 25°C and 30°C for ICs with Novolac, Biphenyl
and Multifunctional Epoxies (Reow at same temperature at which the component was classied)
Maximum Percent Relative Humidity
Package Type and
Body Thickness
Moisture Sensitivity
Level 5% 10% 20% 30% 40% 50% 60% 70% 80% 90%
Body Thickness
≥3.1 mm
including
PQFPs >84 pin,
PLCCs (square)
All MQFPs
or
All BGAs ≥1 mm
Level 2a
60
78
103
41
53
69
33
42
57
28
36
47
10
14
19
7
10
13
6
8
10
30°C
25°C
20°C
Level 3
10
13
17
9
11
14
8
10
13
7
9
12
7
9
12
5
7
10
4
6
8
4
5
7
30°C
25°C
20°C
Level 4
5
6
8
4
5
7
4
5
7
4
5
7
3
5
7
3
4
6
3
3
5
2
3
4
2
3
4
30°C
25°C
20°C
Level 5
4
5
7
3
5
7
3
4
6
2
4
5
2
3
5
2
3
4
2
2
3
1
2
2
1
2
3
30°C
25°C
20°C
Level 5a
2
3
5
1
2
4
1
2
3
1
2
3
1
2
3
1
2
2
1
1
2
1
1
2
1
1
2
30°C
25°C
20°C
Body 2.1 mm
Thickness
<3.1 mm including
PLCCs (rectangular)
18-32 pin
SOICs (wide body)
SOICs ≥20 pins,
PQFPs ≤80 pins
Level 2a
86
148
39
51
69
28
27
49
4
6
8
3
4
5
2
3
4
30°C
25°C
20°C
Level 3
19
25
32
12
15
19
9
12
15
8
10
13
7
9
12
3
5
7
2
3
5
2
3
4
30°C
25°C
20°C
Level 4
7
9
11
5
7
9
4
5
7
4
5
6
3
4
6
3
4
5
2
3
4
2
2
3
1
2
3
30°C
25°C
20°C
Level 5
4
5
6
3
4
5
3
3
5
2
3
4
2
3
4
2
3
4
1
2
3
1
1
3
1
1
2
30°C
25°C
20°C
Level 5a
2
2
3
1
2
2
1
2
2
1
2
2
1
2
2
1
2
2
1
1
2
0.5
1
2
0.5
1
1
30°C
25°C
20°C
Body Thickness
<2.1 mm
including
SOICs <18 pin
All TQFPs, TSOPs
All BGAs <1 mm body
thickness
Level 2a
28
1
2
2
1
1
2
1
1
1
30°C
25°C
20°C
Level 3
11
14
20
7
10
13
1
2
2
1
1
2
1
1
1
30°C
25°C
20°C
Level 4
9
12
17
5
7
9
4
5
7
3
4
6
1
2
2
1
1
2
1
1
1
30°C
25°C
20°C
Level 5
13
18
26
5
6
8
3
4
6
2
3
5
2
3
4
1
2
2
1
1
2
1
1
1
30°C
25°C
20°C
Level 5a
10
13
18
3
5
6
2
3
4
1
2
3
1
2
2
1
2
2
1
1
2
1
1
2
0.5
1
1
30°C
25°C
20°C
For product information and a complete list of distributors, please go to our website: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0290EN - August 27, 2007