CAT93C57ZD4A - Catalyst Semiconductor, Inc.

Characteristics subject to change without notice. Doc. No. 1088, Rev. M

VCC

ORG

GND

VCC

ORG

GND

VCC

ORG

GND

VCC

ORG

GND

NC NC

VCC

ORG

GND

VCC

ORG

GND

CAT93C56/57 (Die Rev. E)

2K-Bit Microwire Serial EEPROM

FEATURES

■High speed operation: 1MHz

■Low power CMOS technology

■1.8 to 6.0 volt operation

■Selectable x8 or x16 memory organization

■Self-timed write cycle with auto-clear

■Hardware and software write protection

■Power-up inadvertant write protection

■1,000,000 Program/erase cycles

■100 year data retention

■Commercial, industrial and automotive

temperature ranges

■Sequential read

■ “Green” package option available

PIN CONFIGURATION

DIP Package (P, L) SOIC Package (J,W)

using Catalyst’s advanced CMOS EEPROM floating

gate technology. The devices are designed to endure

1,000,000 program/erase cycles and has a data reten-

tion of 100 years. The devices are available in 8-pin DIP,

8-pin SOIC, 8-pin TSSOP and 8-pad TDFN packages.

DESCRIPTION

The CAT93C56/57 are 2K-bit Serial EEPROM memory

devices which are configured as either registers of 16

bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each

DI (or DO) pin. The CAT93C56/57 are manufactured

SOIC Package (S,V) SOIC Package (K,X)

TSSOP Package (U,Y)

TDFN Package (RD4, ZD4)

Bottom View

FUNCTIONAL SYMBOL

Note: When the ORG pin is connected to VCC, the x16 organiza-

tion is selected. When it is connected to ground, the x8 pin is

selected. If the ORG pin is left unconnected, then an internal pullup

device will select the x16 organization.

ORG

VCC

GND

PIN FUNCTIONS

Pin Name Function

CS Chip Select

SK Clock Input

DI Serial Data Input

DO Serial Data Output

VCC +1.8 to 6.0V Power Supply

GND Ground

ORG Memory Organization

NC No Connection

CAT93C56/57

Doc. No. 1088, Rev. M

D.C. OPERATING CHARACTERISTICS

VCC = +1.8V to +6.0V, unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Units

ICC1 Power Supply Current fSK = 1MHz 3 mA

(Write) VCC = 5.0V

ICC2 Power Supply Current fSK = 1MHz 500 µA

(Read) VCC = 5.0V

ISB1 Power Supply Current CS = 0V 10 µA

(Standby) (x8 Mode) ORG=GND

ISB2 Power Supply Current CS=0V 0 10 µA

(Standby) (x16Mode) ORG=Float or VCC

ILI Input Leakage Current VIN = 0V to VCC 1µA

ILO Output Leakage Current VOUT = 0V to VCC,1µA

(Including ORG pin) CS = 0V

VIL1 Input Low Voltage 4.5V ≤ VCC < 5.5V -0.1 0.8 V

VIH1 Input High Voltage 4.5V ≤ VCC < 5.5V 2 VCC + 1 V

VIL2 Input Low Voltage 1.8V ≤ VCC < 4.5V 0 VCC x 0.2 V

VIH2 Input High Voltage 1.8V ≤ VCC < 4.5V VCC x 0.7 VCC+1 V

VOL1 Output Low Voltage 4.5V ≤ VCC < 5.5V 0.4 V

IOL = 2.1mA

VOH1 Output High Voltage 4.5V ≤ VCC < 5.5V 2.4 V

IOH = -400µA

VOL2 Output Low Voltage 1.8V ≤ VCC < 4.5V 0.2 V

IOL = 1mA

VOH2 Output High Voltage 1.8V ≤ VCC < 4.5V VCC - 0.2 V

IOH = -100µA

ABSOLUTE MAXIMUM RATINGS*

Temperature Under Bias .................. -55°C to +125°C

Storage Temperature ........................ -65°C to +150°C

Voltage on any Pin with

Respect to Ground(1) ............. -2.0V to +VCC +2.0V

VCC with Respect to Ground ................ -2.0V to +7.0V

Package Power Dissipation

Capability (TA = 25°C) ................................... 1.0W

Lead Soldering Temperature (10 secs) ............ 300°C

Output Short Circuit Current(2) ........................ 100 mA

*COMMENT

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of

the device at these or any other conditions outside of those

listed in the operational sections of this specification is not

implied. Exposure to any absolute maximum rating for

extended periods may affect device performance and

reliability.

RELIABILITY CHARACTERISTICS

Symbol Parameter Reference Test Method Min Typ Max Units

NEND(3) Endurance MIL-STD-883, Test Method 1033 1,000,000 Cycles/Byte

TDR(3) Data Retention MIL-STD-883, Test Method 1008 100 Years

VZAP(3) ESD Susceptibility MIL-STD-883, Test Method 3015 2000 Volts

ILTH(3)(4) Latch-Up JEDEC Standard 17 100 mA

Note:

(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC

voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.

(2) Output shorted for no more than one second. No more than one output shorted at a time.

(3) This parameter is tested initially and after a design or process change that affects the parameter.

(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.

CAT93C56/57

Doc. No. 1088, Rev. M

PIN CAPACITANCE

Symbol Test Conditions Min Typ Max Units

COUT(2) Output Capacitance (DO) VOUT=0V 5 pF

CIN(2) Input Capacitance (CS, SK, DI, ORG) VIN=0V 5 pF

INSTRUCTION SET

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Limits

VCC = VCC = VCC =

1.8V-6V 2.5V-6V 4.5V-5.5V

Test

Symbol Parameter Conditions Min Max Min Max Min Max Units

tCSS CS Setup Time 200 100 50 ns

tCSH CS Hold Time 0 0 0 ns

tDIS DI Setup Time 400 200 100 ns

tDIH DI Hold Time 400 200 100 ns

tPD1 Output Delay to 1 1 0.5 0.25 µs

tPD0 Output Delay to 0 1 0.5 0.25 µs

tHZ(1) Output Delay to High-Z 400 200 100 ns

tEW Program/Erase Pulse Width 10 10 10 ms

tCSMIN Minimum CS Low Time 1 0.5 0.25 µs

tSKHI Minimum SK High Time 1 0.5 0.25 µs

tSKLOW Minimum SK Low Time 1 0.5 0.25 µs

tSV Output Delay to Status Valid 1 0.5 0.25 µs

SKMAX Maximum Clock Frequency DC 250 DC 500 DC 1000 kHz

A.C. CHARACTERISTICS

CL = 100pF

(3)

Note:

(1) Address bit A8 for 256x8 ORG and A7 for 128x16 ORG are "Don't Care" bits, but must be kept at either a "1" or "0" for READ, WRITE

and ERASE commands.

(2) This parameter is tested initially and after a design or process change that affects the parameter.

CAT93C56/57

Doc. No. 1088, Rev. M

A.C. TEST CONDITIONS

Input Rise and Fall Times ≤ 50ns

Input Pulse Voltages 0.4V to 2.4V 4.5V ≤ VCC ≤ 5.5V

Timing Reference Voltages 0.8V, 2.0V 4.5V ≤ VCC ≤ 5.5V

Input Pulse Voltages 0.2VCC to 0.7VCC 1.8V ≤ VCC ≤ 4.5V

Timing Reference Voltages 0.5VCC 1.8V ≤ VCC ≤ 4.5V

POWER-UP TIMING (1)(2)

Symbol Parameter Max Units

tPUR Power-up to Read Operation 1 ms

tPUW Power-up to Write Operation 1 ms

NOTE:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

(2) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.

(3) The input levels and timing reference points are shown in “AC Test Conditions” table.

DEVICE OPERATION

The CAT93C56/57 is a 2048-bit nonvolatile memory

intended for use with industry standard microproces-

sors. The CAT93C56/57 can be organized as either

registers of 16 bits or 8 bits. When organized as X16,

seven 10-bit instructions for 93C57; seven 11-bit

instructions for 93C56 control the reading, writing and

erase operations of the device. When organized as X8,

seven 11-bit instructions for 93C57; seven 12-bit in-

structions for 93C56 control the reading, writing and

erase operations of the device. The CAT93C56/57

operates on a single power supply and will generate

on chip, the high voltage required during any write

operation.

Instructions, addresses, and write data are clocked into

the DI pin on the rising edge of the clock (SK). The DO

pin is normally in a high impedance state except when

reading data from the device, or when checking the

ready/busy status after a write operation.

The ready/busy status can be determined after the start

of a write operation by selecting the device (CS high)

and polling the DO pin; DO low indicates that the

write operation is not completed, while DO high indi-

cates that the device is ready for the next instruction. If

necessary, the DO pin may be placed back into a high

impedance state during chip select by shifting a dummy

“1” into the DI pin. The DO pin will enter the high

impedance state on the falling edge of the clock (SK).

Placing the DO pin into the high impedance state is

recommended in applications where the DI pin and the

DO pin are to be tied together to form a common DI/O

pin.

The format for all instructions sent to the device is a

logical "1" start bit, a 2-bit (or 4-bit) opcode, 7-bit address

(93C57)/ 8-bit address (93C56) (an additional bit when

organized X8) and for write operations a 16-bit data field

(8-bit for X8 organizations).

Read

Upon receiving a READ command and an address

(clocked into the DI pin), the DO pin of the CAT93C56/

57 will come out of the high impedance state and, after

sending an initial dummy zero bit, will begin shifting out

the data addressed (MSB first). The output data bits will

toggle on the rising edge of the SK clock and are stable

after the specified time delay (tPD0 or tPD1).

Write

After receiving a WRITE command, address and the

data, the CS (Chip Select) pin must be deselected for a

minimum of tCSMIN. The falling edge of CS will start the

self clocking clear and data store cycle of the memory

location specified in the instruction. The clocking of the

SK pin is not necessary after the device has entered the

self clocking mode. The ready/busy status of the

CAT93C56/57 can be determined by selecting the device

and polling the DO pin. Since this device features Auto-

Clear before write, it is NOT necessary to erase a

memory location before it is written into.

CAT93C56/57

Doc. No. 1088, Rev. M

Figure 1. Sychronous Data Timing

Figure 2. Read Instruction Timing

tDIS tPD0,tPD1 tCSMIN

tCSS

tDIS tDIH

tSKHI tCSH

VALID VALID

DATA VALID

tSKLOW

DO HIGH-Z

11 0

ANAN–1A0

Dummy 0 D15 . . . D0

D7 . . . D0

1 11 1 111 11111111

Address + 1

D15 . . . D0

D7 . . . D0

Address + 2

D15 . . . D0

D7 . . . D0

Address + n

D15 . . .

D7 . . .

Don't Care

Figure 3. Write Instruction Timing

tCSMIN

STANDBY

HIGH-Z

101

ANAN-1 A0DND0

BUSY

READY

STATUS

VERIFY

tSV tHZ

tEW

CAT93C56/57

Doc. No. 1088, Rev. M

Erase

Upon receiving an ERASE command and address, the

CS (Chip Select) pin must be deasserted for a minimum

of tCSMIN. The falling edge of CS will start the self clocking

clear cycle of the selected memory location. The clocking

of the SK pin is not necessary after the device has

entered the self clocking mode. The ready/busy status of

the CAT93C56/57 can be determined by selecting the

device and polling the DO pin. Once cleared, the content

of a cleared location returns to a logical “1” state.

Erase/Write Enable and Disable

The CAT93C56/57 powers up in the write disable state.

Any writing after power-up or after an EWDS (write

disable) instruction must first be preceded by the EWEN

(write enable) instruction. Once the write instruction is

enabled, it will remain enabled until power to the device

is removed, or the EWDS instruction is sent. The EWDS

instruction can be used to disable all CAT93C56/57

write and clear instructions, and will prevent any

accidental writing or clearing of the device. Data can be

read normally from the device regardless of the write

enable/disable status.

Erase All

Upon receiving an ERAL command, the CS (Chip Select)

pin must be deselected for a minimum of tCSMIN. The

falling edge of CS will start the self clocking clear cycle

of all memory locations in the device. The clocking of the

SK pin is not necessary after the device has entered the

self clocking mode. The ready/busy status of the

CAT93C56/57 can be determined by selecting the device

and polling the DO pin. Once cleared, the contents of all

memory bits return to a logical “1” state.

Write All

Upon receiving a WRAL command and data, the CS

(Chip Select) pin must be deselected for a minimum of

tCSMIN. The falling edge of CS will start the self clocking

data write to all memory locations in the device. The

clocking of the SK pin is not necessary after the device

has entered the self clocking mode. The ready/busy

status of the CAT93C56/57 can be determined by

selecting the device and polling the DO pin. It is not

necessary for all memory locations to be cleared before

the WRAL command is executed.

Figure 4. Erase Instruction Timing

STANDBY

HIGH-Z

ANAN-1

BUSY READY

STATUS VERIFY

tSV tHZ

tEW

tCS

CAT93C56/57

Doc. No. 1088, Rev. M

Figure 7. WRAL Instruction Timing

Figure 5. EWEN/EWDS Instruction Timing

Figure 6. ERAL Instruction Timing

STANDBY

100*

* ENABLE=11

DISABLE=00

STANDBY

tCS

HIGH-Z

10 1

BUSY READY

STATUS VERIFY

tSV tHZ

tEW

STATUS VERIFY

STANDBY

HIGH-Z

10 1

BUSY READY

tSV tHZ

tEW

tCSMIN

DND0

CAT93C56/57

Doc. No. 1088, Rev. M

ORDERING INFORMATION

Notes:

(1) The device used in the above example is a 93C56SI-1.8TE13 (SOIC, Industrial Temperature, 1.8 Volt to 6 Volt Operating Voltage,

Tape & Reel)

(2) Product die revision letter is marked on top of the package as a suffix to the production date code (e.g., AYWWE.) For additional

information, please contact your Catalyst sales office.

Package

P = PDIP

S = SOIC (JEDEC)

J = SOIC (JEDEC)

K = SOIC (EIAJ)

U = TSSOP

RD4 = TDFN (3x3mm)

ZD4 = TDFN (3x3mm, Lead free, Halogen free)

L = PDIP (Lead free, Halogen free)

V = SOIC, JEDEC (Lead free, Halogen free)

W = SOIC, JEDEC (Lead free, Halogen free)

X = SOIC, EIAJ (Lead free, Halogen free)

Y = TSSOP (Lead free, Halogen free)

Prefix Device # Suffix

93C56 SITE13

Product

Number

93C56: 2K

93C57: 2K

Tape & Reel

-1.8

CAT

Temperature Range

Blank = Commercial (0°C - 70°C)

I = Industrial (-40°C - 85°C)

A = Automotive (-40°C - 105°C)

Operating Voltage

Blank (V

=2.5 to 6.0V)

1.8 (V

=1.8 to 6.0V)

Optional

Company ID

E = Extended (-40°C to + 125°C) Die Revision

93C56: E

93C57: E

Rev E

(2)

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Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or

other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a

situation where personal injury or death may occur.

Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets

labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.

Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate

typical semiconductor applications and may not be complete.

Catalyst Semiconductor, Inc.

Corporate Headquarters

1250 Borregas Avenue

Sunnyvale, CA 94089

Phone: 408.542.1000

Fax: 408.542.1200

www.catalyst-semiconductor.com

Publication #: 1088

Revison: M

Issue date: 10/7/04

REVISION HISTORY

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