MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B The SC-59 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 2 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 1 EMITTER (GROUND) 3 2 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW Rating Collector Current Total Device Dissipation TA = 25C Derate above 25C RJA 540 (Note 1) 370 (Note 2) C/W Thermal Resistance - Junction-to-Lead RJL 264 (Note 1) 287 (Note 2) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 8x = Specific Device Code* M = Date Code DEVICE MARKING INFORMATION 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad May, 2002 - Rev. 9 8x M C/W Thermal Resistance - Junction-to-Ambient Semiconductor Components Industries, LLC, 2002 SC-59 CASE 318D STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic 1 *See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN2211T1 SC-59 8A 10 10 3000/Tape & Reel MUN2212T1 SC-59 8B 22 22 3000/Tape & Reel MUN2213T1 SC-59 8C 47 47 3000/Tape & Reel MUN2214T1 SC-59 8D 10 47 3000/Tape & Reel MUN2215T1 (Note 3) SC-59 8E 10 3000/Tape & Reel MUN2216T1 (Note 3) SC-59 8F 4.7 3000/Tape & Reel MUN2230T1 (Note 3) SC-59 8G 1.0 1.0 3000/Tape & Reel MUN2231T1 (Note 3) SC-59 8H 2.2 2.2 3000/Tape & Reel MUN2232T1 (Note 3) SC-59 8J 4.7 4.7 3000/Tape & Reel MUN2233T1 (Note 3) SC-59 8K 4.7 47 3000/Tape & Reel MUN2234T1 (Note 3) SC-59 8L 22 47 3000/Tape & Reel MUN2236T1 SC-59 8N 100 100 3000/Tape & Reel MUN2237T1 SC-59 8P 47 22 3000/Tape & Reel MUN2240T1 (Note 3) SC-59 8T 47 3000/Tape & Reel MUN2241T1 (Note 3) SC-59 8U 100 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 - - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k) VOL MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 70 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 100 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 130 61.1 100 k R1/R2 0.8 1.0 1.2 0.17 - 0.21 - 0.25 - 0.8 0.055 0.38 1.7 1.0 0.1 0.47 2.1 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2230T1 MUN2215T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor Resistor Ratio MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RJA = 370C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=-25C 25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 Figure 4. Output Capacitance 10 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage TA=-25C VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 MUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=-25C TA=75C 25C 25C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 75C 0.1 0.01 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 -25C 100 10 80 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 0 0 10 20 30 40 25C TA=-25C 10 1 0.1 0.01 0.001 50 75C VO = 5 V 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 10 TA=-25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 50 MUN2211T1 Series 10 1000 TA=-25C IC/IB = 10 25C 1 VCE = 10 V hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0 25C 75C TA=-25C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 100 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25C 0.8 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN2211T1 Series 1 300 TA=-25C IC/IB = 10 25C 0.1 75C 0.01 TA=75C VCE = 10 250 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 25C 200 -25C 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC 100 75C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25C TA=-25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25C VO= 0.2 V 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 25C 75C 0.1 75C 25C 100 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 TA = -25C 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 5 4.5 f = 1 MHz lE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 75C TA = -25C 10 25C 1 VO = 5 V 0.1 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 0 Figure 24. Output Capacitance 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA = -25C 75C 10 1 0.1 0 5 35 40 Figure 25. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 15 25 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 35 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 TA = -25C 25C 75C 0.1 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 10 IC, COLLECTOR CURRENT (mA) 1 Figure 27. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25C 75C TA = -25C 10 25C 1 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 29. Output Capacitance 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 10 1 0 5 14 16 Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 Figure 28. DC Current Gain 2 0.4 25C 10 1 40 TA = -25C 100 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 40 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 11 MUN2211T1 Series INFORMATION FOR USING THE SC-59 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.094 2.4 0.039 1.0 0.031 0.8 inches mm SC-59 POWER DISSIPATION The power dissipation of the SC-59 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 338 milliwatts. PD = 150C - 25C 370C/W = 338 milliwatts The 370C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * * * 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 12 MUN2211T1 Series SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200C 150C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 140C 100C 100C 50C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 35. Typical Solder Heating Profile http://onsemi.com 13 MUN2211T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE F A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 B 1 D G J C H K http://onsemi.com 14 DIM A B C D G H J K L S MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 MUN2211T1 Series Notes http://onsemi.com 15 MUN2211T1 Series Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 16 MUN2211T1/D