71 TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS devi DESIGNED FOR COMPLEMENTARY USE WITH TIP120, TIP 121, TIP 122 e 65 W at 25C Case Temperature e Minhge of 1000 at3V,3A 5A Rated Collector Current * 50 mJ Reverse Energy Rating ce schematic COLLECTOR BASE oT r----- EMITTER mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB MECHANICAL INTERCHANGEABILITY OF TIP125 PLASTIC PACKAGE WITH TO-06 GUTLINE 0.540 THiS PORTION OF LEADS, 9500 FREE OF FLASH JASE -= arte coecton ea > EMITTER - - = EE, 390 0.430 4 a210 ot k sil F 0 a6 oor 0018 LEADS 0375 3.199 ie TT os foie rt Et on ooss fF 0.695 0048 170 66 OLMENSIONS! 9210 0935 CASE TEMPERATURE 0790 9029 0030MIN f) MEASUREMENT POINT (2 PLACES) ry FE on 0161 6.090 ~ ansi OWA 0849 Mine Rao @ PLACES ALL DIMENSIONS ARE (N INCHES abso} NOTES: ute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage . . Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current Safe Operating Areas at (or betow) 25 C Case Temperature Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3). Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 4) Unclamped Inductive Load Energy (See Note 5) Operating Collector Junction Temperature Range Storage Temperature Range. . Lead Temperature 1/8 Inch from Case for 10 Seconds | . These values apply when the base-emitter diode is open-circuited. . This value applies for ty < 0.3 ms, duty cycle < 10%, TIP125 =TIP126 TIP127 -60V -80V 100V -60V -80V -t00V -5V -5V -5V a 5 A ___ a - A____> -\_ -0.1 A _+ See Figures 7 and 8 + 65 W ___+ __ 2W _ + 50 mJ < 65C to 150C + 65C to 150C . 260C _+ 1 2 3. Derate linearly to 150C case temperature at the rate of 0.52 WSC or refer to Dissipation Derating Curve, Figure 9, 4. 5 . Derate linearly to 150C free-alr temperature at the rate of 16 mW/C ar refer to Dissipation Derating Curve, Figure 10. . This rating is based on the capability of the transistors to operate safely in the circuit of Figure 2, L = 100 mH, Rego = 100 2, Vep2 = 0 V, Rg = 0.1 2, Voc = 20 V, Energy * I2L/2, LZLdIL OTEdIL GZLdIL SAdAL L2Z6L HIBININA LLOLLEZS-1G ON NILATING GB TEXAS | INSTRUMENTS NCORPORATED POST OFFICE BOX 5012 6 DALLAS, TEXAS 75222 5-379TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature TIP125 TIP126 TIP127 PARAMETER TEST COND!TIONS UNIT MIN MAX|MIN MAX|MIN MAX N Collector-Emitter V(BRICEO I=-30mA, Ig =9, See Note 6 60 80 100 Vv Breakdown Voltage Voce =-30V, Igz0 -0.5 IcEO Collector Cutoff Current Vce=-40V, Ig=90 -0.5 mA Vce=-SOV, Ip=0 0.5 Vop=-60V, 16-0 0.2 IcBo Collector Cutoff Current Vep=80V, Ie=0 0.2 mA Veg =100V, Ig =0 0.2 leERO Emitter Cutoff Current Vegp=-5V, Ic=0 -2 -2 2) mA Static Forward Current VcE=-3V, I=-O0.5A 1000 1000 1000 hee . unre cE c See Notes 6 and 7 Transfer Ratio Vce=-3V, Iq=-3A 1000 1000 1000 Vee Base-E mitter Voltage Vce=-3V, Ic=-3A, See Notes 6 and7 2.5 -2.5 2.5| V Collector-E mitter Ig=-12mA, Io=-3A -2 2 ~2 VCE(sat) . B c See Notes 6 and 7 Vv Saturation Voltage Igp=-20mA, Ic=-5A 4 4 4 NOTES: 6. These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%. 7. These parameters ara measured with valtage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch from the device body. switching characteristics at 25C case temperature PARAMETER TEST CONDITIONSt TYP UNIT! ton Turn-On Time Io= 3A, \g(2) =-12mMA, Ig(g) = 12 mA, 15 toft Turn-Off Time VBE(otf)=5V. RL= 102, See Figure 1 85 as tvVottage and current values shown are nominal; exact values vary slightly with transistor parameters, 562 NOTES: mo 1N914 1N914 1N944 PARAMETER MEASUREMENT INFORMATION INPUT MONITOR TNO14 r a Agar=1.2ka | OUTPUT MONITOR WA 2N6128 OUTPUT + _ = Vas2=5V = Veco =30V Vep1* 32V ~ * ADJUST FOR + Von = ~30V AT + INPUT MONITOR t TEST CIRCUIT Vgen is a 30-V pulse (from O VY) into s 50-92 termination. duty cycle & 2%. FIGURE 1 VOLTAGE WAVEFORMS . Waveforms are monitored on an oscilloscope with the following characteristics: t, < 15 ns, Ri, + 10 M22, Ci, & 11.5 pF. . Resistors must be noninductive types, The d-c power supplies may require additional bypassing in order to minimize ringing. . The Vagen waveform is supplied by a generator with the following characteristics: ty < 15 ns, t < 15 ns, Zou, = 50 O, ty, = 20 Us, -380 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 5012 DALLAS, TEXAB 75222TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS INDUCTIVE LOAD SWITCHING r Vce MONITOR > Rept ee t 100 mH 599 2N6I28 1 INPUT Vtut | Ree = 100.0 WA-oaane | Vee = 20 Le a) 7 Ic T2 MONITOR _ Vee2 =0 , = 7" Vani = WV Rg 20.10 + TEST CIRCUIT NOTE A: Input pulse width in increased until iggy = 1 A. FIGURE 2 tw = Sms t | See Note A! Sv- INPUT VOLTAGE o COLLECTOR CURRENT COLLECTOR VOLTAGE ViBRICER VOLTAGE AND CURRENT WAVEFORMS TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIC COLLECTOR CURRENT 10-000 7000 Voce = ~3V See 6 and 7 3 4000 > I = 2000 3s 3 > 5 5 2 y000 = 2 E 5 700 w z % 2 ao = 400 7 3 a 200 > uy t 100 04 07 -1 ~2 4-7 -10 Ig-Collector CurrentA FIGURE 3 COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE 4 See Notes 6 and VCE (sat) Callector-Emmtter Saturation Voltage-V 4 1 -75 -50-25 0 26 50 75 100 125 150175 07 0.4 [18 = -20 mA, Ig = -8 A Ipet2mA, I=-3A or ea Ip =2mA, 0.2 a cznt Ite |Smalt-Signal Forward Current Transfer Ratio TcCase Temperature"C FIGURE 5 BASE-EMITTER VOLTAGE vs CASE TEMPERATURE Voce =-3 Notes 6 and 7 75 -50-25 O 25 50 75 100 125 150 175 ToCase TemperatureC FIGURE 4 SMALL-SIGNAL COMMON-EMITTER FORWARD CURRENT TRANSFER RATIO s FREQUENCY Voce = -10V ic=-1A Te = 25C 2 ~-FrequencyMHz 4 FIGURE 6 NOTES: 6. These parameters must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%, 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch from the device body. TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 5012 DALLAS, TEXAS 75222 5-381TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS IcMaximum Collector CurrentA MAXIMUM SAFE OPERATING AREAS MAXIMUM COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE See Note 8 2 D-C Operation | Tce < 25C 1 tw = 300 ys, d=0.1 = 10% 0.7 04 TIP125 TIP126 0.2 TIP127 -0.1 ~4 -7-10 20 -40 VceECollector-Emitter VoltageV FIGURE 7 clamped inductive load. 9. Above this point the safe operating araa has not been defined. 100 ~200 400 IMaximum Collector CurrentA MAXIMUM COLLECTOR CURRENT vs UNCLAMPED INDUCTIVE LOAD Vec =20V Rep? = 100 2 Te = 25C See Figure 2 See Note 9 2 4 710 20 40 70100 200 LUnclamped Inductive LoadmH FIGURE 8 NOTES: 8. These combinations of maximum voltage and current may be achieved only when switching from saturation to cutoff with a PTMaximum Continuous Device Dissipation--W THERMAL INFORMATION CASE TEMPERATURE DISSIPATION DERATING CURVE Rec < 1.92C/w 0 25 50 75 100, 125s: 150 Tc~Case Temperature"C FIGURE 9 P7Maximum Continuous Device DissipationW FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE Resa <62.5C/wW 25 50 78 100 125 150 TaFree-Air TemperatureC FIGURE 10 5-382 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 5012 * DALLAS, TEXAS 75222 PRINTED IN USA 1 Tl cannot assume any responsibility for any circuits shown or represent that they are free fram patent inteingement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIW IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PROOUCT POSSIBL