Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced MagnaChip's MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28m @ VGS = 10V <42m @ VGS = 4.5V P-Channel VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.5V Applications Inverters General purpose applications D1 5(D2) 6(D2) 7(D1) 8(D1) 4(G2) 3(S2) 2(G1) 1(S1) G1 D2 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Rating Symbol Drain-Source Voltage Gate-Source Voltage Ta=25oC Continuous Drain Current Ta=100oC Pulsed Drain Current P-Ch VDSS 30 -30 VGSS 20 20 V 6.9 -6.0 A 4.3 -4.1 A 30 -30 A 2 2 0.8 0.8 ID IDM Ta=25oC Power Dissipation(1) Ta=100oC Single Pulse Avalanche Energy(2) PD EAS Junction and Storage Temperature Range Unit N-Ch 18 TJ, Tstg V W 60.5 mJ o -55~150 C Thermal Characteristics Device Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Characteristics N-Ch RJA 62.5 Thermal Resistance, Junction-to-Case N-Ch RJC 60 Thermal Resistance, Junction-to-Ambient(Steady-State) P-Ch RJA 62.5 Thermal Resistance, Junction-to-Case P-Ch RJC 40 (1) January 2009. Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET MDS9651 Part Number Temp. Range Package Packing RoHS Status MDS9651URH -55~150oC SOIC-8 Tape & Reel Halogen Free N-channel Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.9 3.0 Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 6.9A - 21.5 28.0 VGS = 4.5V, ID = 5.0A - 31.5 42.0 VDS = 5V, ID = 6.9A - 15.4 - - 6.94 - - 1.54 - - 1.96 - - 334 - - 48 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS 1.0 V A m S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS = 15V, ID = 6.9A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 83 - Turn-On Delay Time td(on) - 3.5 - Turn-On Rise Time tr - 25.4 - Turn-Off Delay Time td(off) - 14.2 - - 10.5 - - 0.75 1.0 V - 16.5 - ns - 7.8 - nC Turn-Off Fall Time VGS = 10V ,VDS = 15V, RL = 2.2, RGEN = 3 tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 6.9A, di/dt = 100A/s Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = 6A, VDD = 15V, VGS = 10V January 2009. Version 1.0 2 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET Ordering Information Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V -30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.0 -1.9 -3.0 Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = -10V, ID = -6.0A - 30.5 35.0 VGS = -4.5V, ID = -5.0A - 41.5 55.0 VDS = -5V, ID = -6.0A - 13 - - 18.4 - - 3.1 - - 3.6 - - 874 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS -1.0 V A m S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = -15V, ID = -6.0A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz nC pF Reverse Transfer Capacitance Crss - 103 - Output Capacitance Coss - 166 - Turn-On Delay Time td(on) - 9.8 - - 29.8 - - 26.3 - - 8.6 - - -0.75 -1.0 V - 20 - ns - 12.3 - nC Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VGS = -10V ,VDS = -15V, RL = 2.7, RGEN = 3 tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = -1A, VGS = 0V IF = -6.0A, di/dt = 100A/s Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = -11A, VDD = -15V, VGS = -10V January 2009. Version 1.0 3 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET P-channel Electrical Characteristics (Ta =25oC unless otherwise noted) 60 30 10V 6.0V 5.0V 25 50 4.5V RDS(ON) [m ] 20 ID (A) 4.0V 15 10 40 VGS=4.5V 30 VGS=10V 3.5V 20 5 VGS=3V 10 0 0 1 2 3 4 0 5 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 70 Notes : 1. VGS = 10 V 2. ID = 6.9 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID [A] VDS (Volts) 1.4 VGS=10V VGS=4.5V 1.2 1.0 60 50 TA = 125 40 30 TA = 25 20 0.8 0.6 -50 10 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 10 20 *Note ; VDS=5V 15 25 IS [A] ID (A) 125 10 1 125 5 25 0.1 0.3 0 0 1 2 3 4 5 Fig.5 Transfer Characteristics January 2009. Version 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD [V] VGS (Volts) Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 4 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1700 Note : ID = 6.9A 1500 8 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1600 Ciss 1400 Capacitance [pF] 1300 6 4 1200 1100 1000 900 800 700 600 500 2 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 400 Crss 300 200 100 0 0 2 4 6 0 8 10 Fig.7 Gate Charge Characteristics 10 20 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 2 8.0 Operation in This Area is Limited by R DS(on) 7.5 7.0 100 us 1 ms 6.5 1 6.0 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 1s 10 0 DC 10 -1 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Single Pulse R ja=62.5/W Ta=25 10 5.5 1.0 0.5 -2 10 -1 10 0 10 0.0 25 1 VDS, Drain-Source Voltage [V] 50 75 100 125 150 Ta, Case Temperature [] Fig.10 Maximum Drain Current Vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Z ja(t), Normalized Thermal Response 10 0 10 D=0.5 0.2 0.1 -1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z Ja* R Ja(t) + Ta R JA=62.5/W 0.02 0.01 -2 10 single pulse -3 10 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve January 2009. Version 1.0 5 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET 10 60 30 -10.0V -4.5V -6.0V 25 -4.0V 50 -5.0V VGS=-4.5V 15 RDS(ON) [m ] -ID [A] 20 -3.5V 10 40 30 VGS=-10V 20 5 -3.0V 0 10 0 1 2 3 4 5 0 5 10 -VDS [V] 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 60 Notes : 1. VGS = -10 V 2. ID = 6.5 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 -ID [A] 1.4 VGS=-10V 1.2 VGS=-4.5V 1.0 50 TA = 125 40 TA = 25 30 20 0.8 10 0.6 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 -VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 * Notes ; 1. VDS=-5V 15 25 -IS [A] -ID [A] 125 10 1 25 5 0 0.0 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 0.4 5.0 0.8 1.0 -VSD [V] -VGS [V] Fig.5 Transfer Characteristics January 2009. Version 1.0 0.6 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 6 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1100 Note : ID = -6.5A 1000 Ciss -VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 900 6 4 800 700 600 500 300 2 Notes ; 1. VGS = 0 V 2. f = 1 MHz 400 Coss 200 Crss 100 0 0 2 4 6 8 10 12 14 16 18 0 20 0 -QG, Total Gate Charge [nC] 2 30 7.0 100 us 6.5 1 6.0 10 ms -ID, Drain Current [A] -ID, Drain Current [A] 25 7.5 100 ms 1s 0 DC 10 20 8.0 1 ms 10 15 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 10 -VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics 10 5 -1 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Single Pulse R ja=62.5/W Ta=25 10 1.0 0.5 -2 0.0 10 -1 10 0 10 25 1 50 75 100 125 150 -VDS, Drain-Source Voltage [V] T a, Ambient Temperature [] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 1 Z ja(t), Normalized Thermal Response 10 0 10 D=0.5 0.2 0.1 -1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z Ja* R Ja(t) + Ta R JA=62.5/W 0.02 0.01 -2 10 single pulse -3 10 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve January 2009. Version 1.0 7 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET 1200 10 8 Leads SOIC Dimensions are in millimeters unless otherwise specified January 2009. Version 1.0 8 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET Physical Dimensions U.S.A Sunnyvale Office 787 N. 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MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. January 2009. Version 1.0 9 MagnaChip Semiconductor Ltd. MDS9651- Complementary N-P Channel Trench MOSFET Worldwide Sales Support Locations