January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
1
MDS9651– Complementary N-P Channel Trench MOSFET
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Rating
Characteristics Symbol
N-Ch P-Ch
Unit
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS ±20 ±20 V
Ta=25oC 6.9 -6.0 A
Continuous Drain Current
Ta=100oC
ID
4.3 -4.1 A
Pulsed Drain Current IDM 30 -30 A
Ta=25oC 2 2
Power Dissipation(1) Ta=100oC PD 0.8 0.8 W
Single Pulse Avalanche Energy(2) EAS 18 60.5 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Device Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(Steady-State)(1) N-Ch RθJA 62.5
Thermal Resistance, Junction-to-Case N-Ch RθJC 60
Thermal Resistance, Junction-to-Ambient(Steady-State)(1) P-Ch RθJA 62.5
Thermal Resistance, Junction-to-Case P-Ch RθJC 40
oC/W
1(S1)
2(G1)
3(S2)
4(G2)
6(D2)
7(D1)
MDS9651
Complementary N-P Channel Trench MOSFET
General Description
The MDS9651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
N-Channel P-Channel
VDS = 30V VDS = -30V
ID = 6.9A @ VGS = 10V ID = -6.0A @ VGS = -10V
RDS(ON) RDS(ON)
<28mΩ @ VGS = 10V <35mΩ @ VGS = -10V
<42mΩ @ VGS = 4.5V <55mΩ @ VGS = -4.5V
Applications
Inverters
General purpose applications
D1
G1
S1
D2
G2
S2
5(D2)
8(D1)
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDS9651URH -55~150oC SOIC-8 Tape & Reel Halogen Free
N-channel Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Symbol Test Condition Min
Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - -
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0
1.9 3.0
V
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - 1.0
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1
µA
VGS = 10V, ID = 6.9A - 21.5 28.0
Drain-Source ON Resistance RDS(ON)
VGS = 4.5V, ID = 5.0A - 31.5 42.0
mΩ
Forward Transconductance gFS VDS = 5V, ID = 6.9A - 15.4 - S
Dynamic Characteristics
Total Gate Charge Qg - 6.94 -
Gate-Source Charge Qgs - 1.54
-
Gate-Drain Charge Qgd
VDS = 15V, ID = 6.9A,
VGS = 10V
- 1.96 -
nC
Input Capacitance Ciss - 334 -
Reverse Transfer Capacitance Crss - 48 -
Output Capacitance Coss
VDS = 15V, VGS = 0V,
f = 1.0MHz
- 83 -
pF
Turn-On Delay Time td(on) - 3.5 -
Turn-On Rise Time tr - 25.4 -
Turn-Off Delay Time td(off) - 14.2 -
Turn-Off Fall Time tf
VGS = 10V ,VDS = 15V,
RL = 2.2Ω, RGEN = 3Ω
- 10.5 -
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.75
1.0 V
Body Diode Reverse Recovery Time trr - 16.5
- ns
Body Diode Reverse Recovery Charge Qrr
IF = 6.9A, di/dt = 100A/µs
- 7.8 - nC
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 6A, VDD = 15V, VGS = 10V
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
P-channel Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Symbol Test Condition Min
Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V -30 - -
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0
-1.9 -3.0
V
Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - -1.0
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 µA
VGS = -10V, ID = -6.0A - 30.5 35.0
Drain-Source ON Resistance RDS(ON) VGS = -4.5V, ID = -5.0A - 41.5 55.0 mΩ
Forward Transconductance gFS VDS = -5V, ID = -6.0A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg - 18.4 -
Gate-Source Charge Qgs - 3.1 -
Gate-Drain Charge Qgd
VDS = -15V, ID = -6.0A,
VGS = -10V
- 3.6 -
nC
Input Capacitance Ciss - 874 -
Reverse Transfer Capacitance Crss - 103 -
Output Capacitance Coss
VDS = -15V, VGS = 0V,
f = 1.0MHz
- 166 -
pF
Turn-On Delay Time td(on) - 9.8 -
Turn-On Rise Time tr - 29.8 -
Turn-Off Delay Time td(off) - 26.3 -
Turn-Off Fall Time tf
VGS = -10V ,VDS = -15V,
RL = 2.7Ω, RGEN = 3Ω
- 8.6 -
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.75 -1.0 V
Body Diode Reverse Recovery Time trr - 20 - ns
Body Diode Reverse Recovery Charge Qrr IF = -6.0A, di/dt = 100A/µs - 12.3 - nC
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = -11A, VDD = -15V, VGS = -10V
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On
-
Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On
-
Resistance Variation with
Temperature
Fig.4 On
-
Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltag
e
Variation with Source Current and
Temperature
0 1 2 3 4 5
0
5
10
15
20
25
30
10V 6.0V
5.0V
4.5V
4.0V
3.5V
VGS=3V
ID (A)
V
DS
(Volts)
2 4 6 8 10
10
20
30
40
50
60
70
TA = 25℃
TA = 125℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
012345
0
5
10
15
20
125℃
25℃
ID (A)
VGS (Volts)
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
25℃
125℃
IS [A]
VSD
[V]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=4.5V
VGS=10V
Notes :※
1. VGS = 10 V
2. ID = 6.9 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0 5 10 15 20
10
20
30
40
50
60
V
GS
=4.5V
V
GS
=10V
RDS(ON) [mΩ ]
ID
[A]
*Note ; VDS=5V
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating
Area
Fig.1
0
Maximum Drain Current
Vs. Case Temperature
Fig.1
1
Transient Thermal Response
Curve
0 10 20 30
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 2 4 6 8
0
2
4
6
8
10
Note : I※D = 6.9A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
ID, Drain Current [A]
Ta, Case Temperature [ ]℃
10-1 100101
10-2
10-1
100
101
102
100 us
1s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=62.5 /W℃
Ta=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 10010
1102103
10-3
10-2
10-1
100
101
0.01
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ Ja
* R
θ Ja
(t) + Ta
R
Θ JA
=62.5 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
Zθ ja
(t),
Normalized Thermal Response
t1
, Rectangular Pulse Duration [sec]
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On
-
Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On
-
Resistance Variation with
Temperature
Fig.4 On
-
Res
istance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.4 0.6 0.8 1.0
0.1
1
10
25℃
125℃
-IS [A]
-VSD
[V]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=-10V
VGS=-4.5V
Notes :※
1. VGS = -10 V
2. ID = 6.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0 5 10 15 20
10
20
30
40
50
60
V
GS
=-4.5V
V
GS
=-10V
RDS(ON) [mΩ ]
-ID
[A]
3 4 5 6 7 8 9 10
10
20
30
40
50
60
TA = 25℃
TA = 125℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
-VGS, Gate to Source Volatge [V]
0 1 2 3 4 5
0
5
10
15
20
25
30
-10.0V
-6.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-ID [A]
-V
DS
[V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
* Notes ;
1. VDS=-5V
125℃
25℃
-ID [A]
-VGS [V]
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response Curve
10-1 100101
10-2
10-1
100
101
102
100 us
1s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=62.5 /W℃
Ta=25℃
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-ID, Drain Current [A]
Ta, Ambient Temperature [ ]℃
10-5 10-4 10-3 10-2 10
-1 10010110
2103
10-3
10-2
10-1
10
0
10
1
0.01
Notes :※
Duty Factor, D=t1
/t2
PEAK TJ = P
DM
* Zθ Ja
* Rθ Ja
(t) + Ta
R
Θ JA
=62.5 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
Zθ ja
(t),
Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
-VDS, Drain-Source Voltage [V]
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
Note : I※D = -6.5A
-VGS, Gate-Source Voltage [V]
-QG, Total Gate Charge [nC]
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
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MDS9651– Complementary N-P Channel Trench MOSFET
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
January 2009. Version 1.0 MagnaChip Semiconductor Ltd.
9
MDS9651– Complementary N-P Channel Trench MOSFET
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
