VS-25RIA Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 2Document Number: 93701
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Note
•t
q = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° sinusoidal conduction 25 A
85 °C
Maximum RMS on-state current IT(RMS) 40 A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
420
A
t = 8.3 ms 440
t = 10 ms 100 % VRRM
reapplied
350
t = 8.3 ms 370
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
867
A2s
t = 8.3 ms 790
t = 10 ms 100 % VRRM
reapplied
615
t = 8.3 ms 560
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum 8670 A2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.99 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.40
Low level value of
on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 10.1
m
High level value of
on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 5.7
Maximum on-state voltage VTM Ipk = 79 A, TJ = 25 °C 1.70 V
Maximum holding current IHTJ = 25 °C, anode supply 6 V, resistive load 130 mA
Latching current IL200
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise
of turned-on current
VDRM 600 V
dI/dt
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
200
A/μs
VDRM 800 V 180
VDRM 1000 V 160
VDRM 1600 V 150
Typical turn-on time tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9
μs
Typical reverse recovery time trr
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,
dI/dt = - 10 A/μs 4
Typical turn-off time tq
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 100 V/μs
TJ = TJ maximum linear to 67 % rated VDRM 300 (1)