1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection enables class C operation and complete
switch off of the transistor
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLP05H6250XR
Power LDMOS transistor
Rev. 3 — 3 February 2016 Product data sheet
Table 1. Application information
Test signal f VDS PLGpD
(MHz) (V) (W) (dB) (%)
pulsed RF 108 50 250 27 75
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Product data sheet Rev. 3 — 3 February 2016 2 of 14
BLP05H6250XR
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1gate 2
2gate 1
3drain 1
4drain 2
5source [1]
12
43
pin 1 index
2
1
5
4
3
aaa-003574
Table 3. Ordering information
Type number Package
Name Description Version
BLP05H6250XR HSOP4F plastic, heatsink small outline package; 4 leads(flat) SOT1223-2
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 135 V
VGS gate-source voltage 6+11V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 115 C[1][2] 0.31 K/W
Zth(j-c) transient thermal impedance from junction
to case
Tj=150C; tp=100s;
=20%
[3] 0.101 K/W
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Product data sheet Rev. 3 — 3 February 2016 3 of 14
BLP05H6250XR
Power LDMOS transistor
6. Characteristics
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
aaa-020219
10-7 10-6 10-5 10-4 10-3 10-2 10-1 1
0
0.1
0.2
0.3
0.4
tp (s)
Zth(j-c)th(j-c)
Zth(j-c)
(K/W)(K/W)(K/W)
(7)(7)(7)
(6)(6)(6)
(5)(5)(5)
(4)(4)(4)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; I
D=1.0mA 135 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 100 mA 1.33 1.9 2.33 V
VGSq gate-source quiescent voltage VDS =50 V; I
D=50mA - 1.8 - V
IDSS drain leakage current VGS =0V; V
DS =50V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V
-14.6-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
RDS(on) drain-source on-state
resistance
VGS =V
GS(th) + 3.75 V;
ID=3.5A
-0.40-
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Product data sheet Rev. 3 — 3 February 2016 4 of 14
BLP05H6250XR
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLP05H6250XR is capable of withstanding a load mismatch corresponding to
VSWR > 65 : 1 through all phases under the following conditions: VDS =50V;
IDq =100mA; P
L= 250 W pulsed; f = 108 MHz.
Table 7. AC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS =0V; V
DS = 50 V; f = 1 MHz - 0.9 - pF
Ciss input capacitance VGS =0V; V
DS = 50 V; f = 1 MHz - 120 - pF
Coss output capacitance VGS =0V; V
DS =50V; f=1MHz - 39 - pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100
s;
= 20 %; f = 108 MHz; RF performance at VDS =50V;
IDq = 100 mA; Tcase =25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL = 250 W 26.2 27 - dB
RLin input return loss PL = 250 W - 12 10 dB
Ddrain efficiency PL = 250 W 72 75 - %
VGS =0V; f= 1MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
aaa-020220
0 10 20 30 40 50 60
0
50
100
150
200
250
300
VDS (V)
Cossoss
Coss
(pF)(pF)(pF)
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Product data sheet Rev. 3 — 3 February 2016 5 of 14
BLP05H6250XR
Power LDMOS transistor
7.2 Impedance information
7.3 UIS avalanche energy
For information see application note AN10273.
Fig 3. Definition of transistor impedance
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL=250W.
f ZiZL
(MHz) () ()
108 15.9 49.8j 15.3 + 3.5j
001aan207
gate 1
gate 2
drain 2
drain 1
Z
i
Z
L
Table 10. Typical avalanche data per section
Tamb = 25
C; typical test data; test jig without water cooling.
IAS EAS
(A) (J)
81.4
91.0
10 0.8
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Product data sheet Rev. 3 — 3 February 2016 6 of 14
BLP05H6250XR
Power LDMOS transistor
7.4 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m.
See Table 11 for a list of components.
Fig 4. Component layout for class-AB production test circuit
200 mm
80 mm
T1
T2
aaa-020545
45.1 mm
C1 C2
C4
C3
C12
C14 C17
C18
C15
C16
C10
C11
C19
C21
R1
C5
C7
C8
C6 R4 C13
C20
R2
R3
L1
L2
R5 L3
L4
R6
Table 11. List of components
For test circuit see Figure 4.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 510 pF [1]
C2, C3 multilayer ceramic chip capacitor 220 pF [1]
C4 multilayer ceramic chip capacitor 91 pF [1]
C5, C6 multilayer ceramic chip capacitor 4.7 F, 50 V
C7, C8 multilayer ceramic chip capacitor 820 pF [1]
C10, C11 multilayer ceramic chip capacitor 820 pF [1]
C12, C13 multilayer ceramic chip capacitor 4.7 F, 10 0 V
C14, C15 multilayer ceramic chip capacitor 43 pF [1]
C16 multilayer ceramic chip capacitor 6.8 pF [1]
C17, C18 multilayer ceramic chip capacitor 120 pF [1]
C19, C20 electrolytic capacitor 2200 F, 64 V
C21 multilayer ceramic chip capacitor 62 pF [1]
L1, L2 wire inductor 10 turns, D = 2 mm, 0.5 mm copper wire
L3, L4 wire inductor 6 turns, D = 2 mm, 0.5 mm copper wire
R1, R2 resistor 4.7 kSMD 1206
R3, R4 shunt resistor 0.01 FC4L110R010FER
R5, R6 metal film resistor 10 , 0.6 W
T1, T2 semi rigid coax 50 , length = 160 mm EZ-141-AL-TP-M17
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Product data sheet Rev. 3 — 3 February 2016 7 of 14
BLP05H6250XR
Power LDMOS transistor
7.5 Graphical data
The following figures are measured in a class-AB production test circuit.
7.5.1 1-Tone CW pulsed
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp= 100 s;
=20%.
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp= 100 s;
=20%.
(1) PL(1dB) = 54.2 dBm (265 W)
(2) PL(3dB) = 54.8 dBm (300 W)
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Output power as a function of input power;
typical values
aaa-020221
0 80 160 240 320 400
22 10
24 30
26 50
28 70
30 90
PL (W)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
P
i
(dBm)
3024 25 26 27 28 29
aaa-020546
58
PL
(dBm)
52
53
54
55
56
57
Ideal PL
PL
(2)
(1)
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Product data sheet Rev. 3 — 3 February 2016 8 of 14
BLP05H6250XR
Power LDMOS transistor
VDS = 50 V; f = 108 MHz; tp= 100 s; =20%.
(1) IDq =20mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 400 mA
(5) IDq = 600 mA
(6) IDq = 800 mA
(7) IDq = 1000 mA
VDS = 50 V; f = 108 MHz; tp= 100 s; =20%.
(1) IDq =20mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 400 mA
(5) IDq = 600 mA
(6) IDq = 800 mA
(7) IDq = 1000 mA
Fig 7. Power gain as a function of output power;
typical values
Fig 8. Drain efficiency as a function of output power;
typical values
aaa-020222
0 50 100 150 200 250 300 350
22
24
26
28
30
32
PL (W)
Gp
Gp
(dB)(dB)(dB)
(7)(7)(7)
(6)(6)(6)
(5)(5)(5)
(4)(4)(4)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-020223
0 50 100 150 200 250 300 350
10
30
50
70
90
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
(6)(6)(6)
(7)(7)(7)
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Product data sheet Rev. 3 — 3 February 2016 9 of 14
BLP05H6250XR
Power LDMOS transistor
IDq = 100 mA; f = 108 MHz; tp= 100 s; =20%.
(1) VDS =50V
(2) VDS =45V
(3) VDS =40V
(4) VDS =35V
(5) VDS =30V
(6) VDS =25V
(7) VDS =20V
IDq = 100 mA; f = 108 MHz; tp= 100 s; =20%.
(1) VDS =50V
(2) VDS =45V
(3) VDS =40V
(4) VDS =35V
(5) VDS =30V
(6) VDS =25V
(7) VDS =20V
Fig 9. Power gain as a function of output power;
typical values
Fig 10. Drain efficiency as a function of output power;
typical values
aaa-020224
0 50 100 150 200 250 300 350
20
22
24
26
28
30
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
(4)
(4)(4)
(5)
(5)(5)
(6)
(6)(6)
(7)
(7)(7)
aaa-020225
0 50 100 150 200 250 300 350
10
30
50
70
90
PL (W)
ηD
ηD
(%)(%)(%) (1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
(4)
(4)(4)
(5)
(5)(5)
(6)
(6)(6)
(7)
(7)(7)
BLP05H6250XR All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 3 February 2016 10 of 14
BLP05H6250XR
Power LDMOS transistor
8. Package outline
Fig 11. Package outline SOT1223-2 (HSOP4F)
HSOP4F: plastic, heatsink small outline package; 4 leads(flat) SOT1223-2
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Product data sheet Rev. 3 — 3 February 2016 11 of 14
BLP05H6250XR
Power LDMOS transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 12. Abbreviations
Acronym Description
CW Continuous Wave
ESD ElectroStatic Discharge
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
SMD Surface Mounted Device
UIS Unclamped Inductive Switching
VSWR Voltage Standing-Wave Ratio
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLP05H6250XR v.3 20160203 Product data sheet - BLP05H6200XR#2
Modifications: •The product name has been renamed from BLP05H6200XR to BLP05H6250XR
•Table 1 on page 1: table updated
•Section 1.2 on page 1: section updated
•Figure 1 on page 3: figure added
•Table 6 on page 3: table updated
•Table 8 on page 4: table updated
•Figure 2 on page 4: figure added
•Table 9 on page 5: table updated
•Table 10 on page 5: table updated
•Section 7.4 on page 6: section added
•Section 7.5 on page 7: section added
BLP05H6200XR#2 20150901 Objective data sheet - BLP05H6200XR v.1
BLP05H6200XR v.1 20150518 Objective data sheet - -
BLP05H6250XR All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 3 February 2016 12 of 14
BLP05H6250XR
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 3 — 3 February 2016 13 of 14
BLP05H6250XR
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLP05H6250XR
Power LDMOS transistor
© Ampleon Netherlands B.V. 2016. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 3 February 2016
Document identifier: BLP05H6250XR
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 5
7.3 UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5
7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.5.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 11
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Contact information. . . . . . . . . . . . . . . . . . . . . 13
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14