ky SGS-THOMSON MICROELECTROMIGS TYP 212 --->TYP 2012 SCR FOR OVERVOLTAGE PROTECTION FEATURES a HIGH SURGE CURRENT CAPABILITY A eae K a HIGH di/dt RATING / 6 a HIGH STABILITY AND RELIABILITY hs DESCRIPTION The TYP 212 ---> 1012 Family uses high perfor- mance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for Ky overvoitage protection in crowbar circuits applica- G tion. TO 220 AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit T(RMS) RMS on-state current Te = 110C 12 A (180 conduction angle, single phase circuit) IT(AV) Average on-state current Te = 110C 8 A (180 conduction angle, single phase circuit) TSM Non repetitive surge peak on-state current tp = 8.3 ms 315 A (Tj initial = 25C ) tp = 10 ms 300 12 l2t value tp = 10 ms 450 Aes 'T Non repetitive surge peak on-state current tp=1ms 750 A (Tj initial = 25C ) Exponential pulse wave form di/dt Critical rate of rise of on-state current 100 Alus Gate supply : Iq = 300 mA diG/dt = 1 Avis Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Ti Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TYP Unit 212 512 1012 2012 VDRM Repetitive peak off-state voltage 25 50 100 200 Vv VRARM Tj= 125C 1/5 July 1991 117 TYP 212 ---> TYP 2012 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a}) [Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC 1.3 C/W GATE CHARACTERISTICS (maximum values) PG (Av) = 1W Pam = 40W (tp = 20 us) IFGM = 4A (p= 20 us) VEGM = 16V (tp=20ys) VAGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IG@T Vp=12V (DC) RAL=33Q Tj=25C | MAX 30 mA VGT Vp=12V. (DC) AL=330 Tj=25C | MAX 1.5 Vv Vad Vp=VbDRAM RL=3.3kQ Tj= 125C MIN 0.2 tat Vp=VpRM_ Iq = 200mA Tj=25C TYP 1 us dig/dt = 1.5A/s iL Iq= 1.2 IGT Tj=25C | TYP 60 mA IH IT= 500mA gate open Tj=25C MAX 50 mA VIM ITM= 50A tp= 380ys Tj=-25C | MAX 15 Vv IDRM VoRM Rated Tj=25C MAX 0.01 mA IRAM VrRRM Rated Ti= 125C > dV/dt Linear slope up to VD=67%VDRM Tj= 125C MIN 200 Vius gate open Tq Vp=67%VpRM 'ITM=S50A Vr= 25V Tj= 125C | TYP 100 Hs ditM/at=30 A/us dVp/dt= 50V/us 2/5 118 f SGS-THOMSON SF Ficrozuecimonics TYP 212 ---> TYP 2012 Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 12 360 8 o | La OQ: 180 6 Qi: 120 4 [ OQ 90 GQ: 60 2 1 Ol- 30 Itav) (A) 0 L | 1 1 0 2 4 6 8 10 12 14 Fig.3 : Average on-state current versus case temperature. | rayy fA) 14 12 10 Tcase(C) Q 25 50 75 100 125 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtI Ti) INT). IgthTi=25C! In| Tj=25 C 2.6 2 Igt 1.5 1 PT Ih Sit meeps ee 0.5 tt i Tj (C) 4 1 1 1 0 -40-30-20-10 0 10 20 30 40 50 60 70 BO 90 100110120130 SGS-THOMSON IZ incRor EcrROMICS Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (WwW) Tease (C) 14 e180" Rih- 0 c/w 12 C/W. 110 10 8 115 6 4 120 27 Tamb (C) 0 125 0 20 40 60 80 100 120 140 Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. Zth (C/W) 1.0E+02 = 1,0E-01 $OE-03 406-02 10E-O1 10600 10E*01 1.0E+02 1.0E+03 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. IT3m (A) 350 Tj initial 25C 300 250 200 150 100 50 Number of cycles 0 1 10 100 1000 3/5 119 TYP 212 ---> TYP 2012 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of I2t. t tgm (A). It (A%8) 1000 Tj initial = 25C 100 Fig.9 : Peak capacitor discharge current versus pulse width. Irm(A) 0.1 1 10 100 ITM 4/5 120 S-THOMSO! ky $GS "THOMSON Fig.8 : On-state characteristics (maximum values). lay (A) 1000 Tj initiat 25C 100 Tj max 10 Vto = 0.75V Rt =0.014 9 Vimy) 0 1 2 3 4 5 Fig.10 : Allowable peak capacitor discharge current versus initial junction temparature. ITMIT}I Trottsc] 100 90 80 70 60 50 40 30} 20 10 TC) 0 0 25 50 75 100 125 4150 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic TYP 212 ---> TYP 2012 + 3.6 - 0.05 10.9401 4,65 0.47 + 0.20 2.8 - 0.26 15.2- 0.97 12.7 min 14.7 max 0.5 70.15 ' i> 2.54 0.25 2,54 0.25 2.420.3 kK AG Cooling method : by conduction (method C) Marking : type number Weight : 29 Polarity :NA Stud torque :NA 5/5 i S$GS-THOMSON FF iicRa eeTrRONICS 121