PRODUCT SELECTION GUIDE
PARAMETER 27C010L-90 27C010L-12 27C010L-15 27C010L-17 27C010L-20
Address Access Time (Max) 90 ns 120 ns 150 ns 170 ns 200 ns
Chip Select Time (Max) 90 ns 120 ns 150 ns 170 ns 200 ns
Output Enable Time (Max) 35 ns 35 ns 40 ns 40 ns 40 ns
WS27C010L
TOP VIEW
Chip Carrier CERDIP
PIN CONFIGURATION
4-25
Military 128K
x
8 CMOS EPROM
KEY FEATURES
•High Performance CMOS •DESC SMD No. 5962-89614
— 90 ns Access Time •Compatible with JEDEC 27010 and
•Fast Programming 27C010 EPROMs
•EPI Processing •JEDEC Standard Pin Configuration
— Latch-Up Immunity to 200 mA — 32 Pin CERDIP Package
— ESD Protection Exceeds 2000 Volts — 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION
The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory
organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned
split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with
a very fast 35 nsec TOE output enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier
(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade
density paths for existing 128K and 256K EPROM users.
A14
A13
A8
A9
A11
OE
A10
CE
O7
A7
A6
A5
A4
A3
A2
A1
A0
O0
A12
A15
A16
VPP
VCC
PGM
NC
O1 O2 O3 O4 O5 O6
1
432 32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
GND
VCC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
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AC READ CHARACTERISTICS
Over Operating Range with VPP = VCC.
SYMBOL PARAMETER -90 -12 -15 -17 -20 UNITS
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
tACC Address to Output Delay 90 120 150 170 200
tCE CE to Output Delay 90 120 150 170 200
tOE OE to Output Delay 35 35 40 40 40
tDF Output Disable to
Output Float (Note 3) 35 35 40 40 40 ns
Output Hold from
tOH Addresses, CE or OE, 0 0 0 0 0
Whichever Occurred
First (Note 3)
DC READ CHARACTERISTICS
Over Operating Range. (See Above)
SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNITS
VIL Input Low Voltage –0.5 0.8 V
VIH Input High Voltage 2.0 VCC + 1 V
VOL Output Low Voltage IOL = 2.1 mA 0.4 V
VOH Output High Voltage IOH = –400 µA 3.5 V
ISB1 VCC Standby Current (CMOS) CE = VCC ± 0.3 V (Note 2) 100 µA
ISB2 VCC Standby Current CE = VIH 1mA
I
CC VCC Active Current (TTL) CE = OE = VIL F = 5 MHz 50 mA
(Note 1) F = 8 MHz 60 mA
IPP VPP Supply Current VPP = VCC 100 µA
VPP VPP Read Voltage VCC –0.4 VCC V
ILI Input Leakage Current VIN = 5.5 V or Gnd –10 10 µA
ILO Output Leakage Current VOUT = 5.5 V or Gnd –10 10 µA
WS27C010L
4-26
OPERATING RANGE
RANGE TEMPERATURE VCC
Military –55°C to +125°C +5V ± 10%
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 14V
VCC Supply Voltage with
Respect to Ground ....................................–0.6V to +7V
ESD Protection..................................................>2000V
NOTES: 1. The supply current is the sum of ICC and IPP. The maximum current value is with Outputs O0to O7unloaded.
2. CMOS inputs: VIL = GND ± 0.3V, VIH = VCC ± 0.3 V.
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
NOTE: 3.
This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing
diagram.
SYMBOL PARAMETER CONDITIONS TYP(6) MAX UNITS
CIN Input Capacitance VIN = 0V 4 6 pF
COUT Output Capacitance VOUT = 0V 8 12 pF
CVPP VPP Capacitance VPP = 0 V 18 25 pF
4-27
WS27C010L
AC READ TIMING DIAGRAM
tACC tOH
ADDRESS VALID
VALID OUTPUT
ADDRESSES VIH
VIL
tOE
tDF
tCE
CE
OE
VIH
VIH
VIL
VIH
VIL
VIL
HIGH ZHIGH Z
(5)
(4)
(4)
OUTPUT
CAPACITANCE
(5)
TA= 25°C, f = 1 MHz
100 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
820 Ω
2.01 V
D.U.T.
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD
(High Impedance Test Systems)
2.4
0.4
2.0
0.8
2.0
0.8
TEST
POINTS
NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES: 5. This parameter is only sampled and is not 100% tested.
6. Typical values are for TA= 25°C and nominal supply voltages.
A.C. testing inputs are driven at 2.4 V for a logic "1" and 0.4 V
for a logic "0." Timing measurements are made at 2.0 V for a
logic "1" and 0.8 V for a logic "0".
NOTE: 4. OE may be delayed up to tCE – tOE after the falling edge of CE without impact on tCE.
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(TA= 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V. See Notes 8, 9 and 10)
SYMBOLS PARAMETER MIN MAX UNITS
ILI Input Leakage Current (VIN = VCC or Gnd) –10 10 µA
IPP VPP Supply Current During 60 mA
Programming Pulse (CE = PGM = VIL)
ICC VCC Supply Current 50 mA
VIL Input Low Voltage –0.1 0.8 V
VIH Input High Voltage 2.0 VCC + 0.3 V
VOL Output Low Voltage During Verify (IOL = 2.1 mA) 0.4 V
VOH Output High Voltage During Verify (IOH = –400 µA) 3.5 V
SYMBOLS PARAMETER MIN TYP MAX UNITS
tAS Address Setup Time 2 µs
tOES Output Enable Setup Time 2 µs
tOS Data Setup Time 2 µs
tAH Address Hold Time 0 µs
tOH Data Hold Time 2 µs
tDF Chip Disable to Output Float Delay 0 55 ns
tOE Data Valid From Output Enable 55 ns
tVS/tCES VPP Setup Time/CE Setup Time 2 µs
tPW PGM Pulse Width 0.1 3 4 ms
WS27C010L
4-28
NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
9. VPP must not be greater than 14 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts
to 12.75 volts or vice-versa.
10. During power up the PGM pin must be brought high (≥VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS
(TA= 25 ± 5°C, VCC = 6.25 ± 0.25 V, VPP = 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ADDRESS STABLE
ADDRESSES
VPP
VPP VCC
VIH
VIL
CE
DATA
tAS
tPW
tOS tOH tOE
tAH
tDF
tVS
tCES
tOES
DATA OUT
DATA IN STABLE
OE
PGM
VIH
VIL
VIH
VIL
VALID
HIGH Z
ORDERING INFORMATION
OPERATING WSI
PART NUMBER TEMPERATURE MANUFACTURING
RANGE PROCEDURE
WS27C010L-12CMB*120 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-12DMB*120 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-15CMB 150 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-15DMB 150 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-17CMB*170 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-17DMB*170 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-20CMB*200 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-20DMB*200 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
4-29
WS27C010L
NOTE: 14. The actual part marking will not include the initials "WS."
*SMD product. See page 4-2 for SMD number.
PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO
PAGE 5-1
The WS27C010L is programmed using Algorithm E shown on page 5-11.
(This product can also be programmed by using National Semiconductor's 27C010 Programming Algorithm.)
SPEED PACKAGE PACKAGE
(ns) TYPE DRAWING
MODE PINS CE OE PGM A9A0VPP VCC OUTPUTS
Read VIL VIL X(11) X X X 5.0 V DOUT
Output Disable X VIH XXXX5.0 V High Z
Standby VIH XXXXX5.0 V High Z
Programming VIL VIH VIL XXV
PP(12) 6.0 V DIN
Program Verify VIL VIL VIH XXV
PP(12) 6.0 V DOUT
Program Inhibit VIH XXXXV
PP(12) 5.0 V High Z
Signature Manufacturer(13) VIL VIL XV
H
(12) VIL X 5.0 V 23 H
Device(13) VIL VIL XV
H
(12) VIH X 5.0 V C1 H
MODE SELECTION
The modes of operation of the WS27C010L are listed below. A single 5 V power supply is required in the read
mode. All inputs are TTL levels except for VPP and A9for device signature.
NOTES: 11.X can be VIL or VIH. 12.VH= VPP = 12.75 ± 0.25 V. 13.A1– A8, A10 – A16 = VIL.
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