© Semiconductor Components Industries, LLC, 2018
February, 2019 − Rev. 1
1Publication Order Number:
FODM214/D
FODM214, FODM217 Series
Single Channel, AC/DC
Sensing Input,
Phototransistor
Optocoupler In Half-Pitch
Mini-Flat 4-Pin Package
The FODM217 series consist of a gallium arsenide infrared emitting
diode driving a phototransistor. The FODM214 series consist of two
gallium arsenide infrared emitting diodes connected in inverse parallel
for AC operation. Both were built in a compact, half−pitch, mini−flat,
4−pin package. The lead pitch is 2.54 mm.
Features
•Current Transfer Ratio Ranges from 20 to 600%
at IF = ±1 mA, VCE = 5 V, TA = 25°C
♦FODM214 − 20 to 400%
♦FODM214A − 50 to 250%
at IF = 5 mA, VCE = 5 V, TA = 25°C
♦FODM217A − 80 to 160%
♦FODM217B − 130 to 260%
♦FODM217C − 200 to 400%
♦FODM217D − 300 to 600%
•Safety and Regulatory Approvals:
♦UL1577, 3750 VACRMS for 1 min
♦DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
•Applicable to Infrared Ray Reflow, 260°C
Typical Applications
•Primarily Suited for DC−DC Converters
•For Ground Loop Isolation, Signal to Noise Isolation
•Communications – Adapters, Chargers
•Consumer – Appliances, Set Top Boxes
•Industrial – Power Supplies, Motor Control, Programmable Logic
Control
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MFP4 2.5x4.4, 1.27P
CASE TBD
MARKING DIAGRAM
See detailed ordering and shipping information on page 7 of
this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
1. ON = Corporate Logo
2. 21xx = Device Number
3. V = DIN EN/IEC60747−5−5 Option
4. X = One−Digit Year Code
5. YY = Digit Work Week
6. R1 = Assembly Package Code
FODM214, FODM217 Series
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SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–III
Climatic Classification 55/110/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904 Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060 Vpeak
VIORM Maximum Working Insulation Voltage 565 Vpeak
VIOTM Highest Allowable Over−Voltage 4,000 Vpeak
External Creepage ≥ 5 mm
External Clearance ≥ 5 mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm
TSCase Temperature (Note 1) 150 °C
IS,INPUT Input Current (Note 1) 200 mA
PS,OUTPUT Output Power (Note 1) 300 mW
RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109W
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Symbol Parameter Value Units
TSTG Storage Temperature −55 to +150 °C
TOPR Operating Temperature −55 to +110 °C
TJJunction Temperature −55 to +125 °C
TSOL Lead Solder Temperature
(Refer to Reflow Temperature Profile)
260 for 10 sec °C
EMITTER
IF(average) Continuous Forward Current 50 mA
IF(peak) Peak Forward Current (1 ms pulse, 300 pps) 1 A
VRReverse Input Voltage 6 V
PDLED Power Dissipation (Note 2) 70 mW
DETECTOR
IC(average) Continuous Collector Current 50 mA
VCEO Collector−Emitter Voltage 80 V
VECO Emitter−Collector Voltage 7 V
PDCCollector Power Dissipation (Note 2) 150 mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
FODM214, FODM217 Series
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ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol Parameter Device Conditions Min. Typ. Max. Units
EMITTER
VFForward Voltage FODM214 IF = ±20 mA
1.2 1.4
V
FODM217 IF = 20 mA
IRReverse Current FODM217 VR = 4 V 10 mA
CTTerminal Capacitance All V = 0 V, f = 1 kHz 30 250 pF
DETECTOR
BVCEO Collector−Emitter Breakdown Voltage All IC = 0.1 mA, IF = 0 mA 80 V
BVECO Emitter−Collector Breakdown Voltage All IE = 10 mA, IF = 0 mA 7 V
ICEO Collector Dark Current All VCE = 50 V, IF = 0 mA 100 nA
TRANSFER CHARACTERISTICS TA=25°C unless otherwise specified
Symbol Parameter Device Conditions Min. Typ. Max. Units
CTRCE Current Transfer Ratio
(collector−emitter)
FODM214 IF = ±1 mA, VCE = 5 V 20 400 %
FODM214A 50 250
FODM217A IF = 5 mA, VCE = 5 V 80 160
FODM217B 130 260
FODM217C 200 400
FODM217D 300 600
ICCollector Current FODM214 IF = ±1 mA, VCE = 5 V 0.2 2.5 mA
FODM217 IF = 5 mA, VCE = 5 V 4 30
CTR(SAT) Saturated Current Transfer Ratio FODM214 IF = ±8 mA, VCE = 0.4 V
60
%
FODM217 IF = 8 mA, VCE = 0.4 V
IC(SAT) Collector Current FODM214 IF = ±8 mA, VCE = 0.4 V
4.8
mA
FODM217 IF = 8 mA, VCE = 0.4 V
VCE(SAT) Collector−Emitter Saturation Voltage FODM214 IF = ±8 mA, IC = 2.4 mA
0.4
V
FODM217 IF = 8 mA, IC = 2.4 mA
SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol Parameter Conditions Min. Typ. Max. Units
tON Turn On Time IC = 2 mA, VCE = 10 V, RL = 100 W3ms
tOFF Turn Off Time IC = 2 mA, VCE = 10 V, RL = 100 W3ms
tROutput Rise Time (10%−90%) IC = 2 mA, VCE = 10 V, RL = 100 W3ms
tFOutput Fall Time (90%−10%) IC = 2 mA, VCE = 10 V, RL = 100 W3ms
ISOLATION CHARACTERISTICS
Symbol Parameter Conditions Min. Typ. Max. Units
VISO Input−Output Isolation Voltage Freq = 60 Hz, t = 1.0 min,
II−O v 10 mA (Note 3, 4)
3,750 VACRMS
RISO Isolation Resistance VI−O = 500 V (Note 3) 5 x 1010 W
CISO Isolation Capacitance Frequency = 1 MHz 0.6 1.0 pF
3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
4. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.
FODM214, FODM217 Series
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TYPICAL CHARACTERISTICS
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
Figure 2. LED Power Dissipation vs. Ambient
Temperature
Figure 3. Forward Current vs. Forward Voltage Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
Figure 5. Collector Emitter Voltage vs. Forward Current Figure 6. Collector Current vs. Collector−Emitter
Voltage
TA, AMBIENT TEMPERATURE (5C)
PDC, COLLECTOR POWER
DISSIPATION (mW)
VF
, FORWARD VOLTAGE (V)
IF
, FORWARD CURRENT (mA)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
PDLED, LED POWER DISSIPATION (mW)
IF
, FORWARD CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR−EMITTER CURRENT (V)
0 25 50 75 100 125
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125
0
20
40
60
80
TA, AMBIENT TEMPERATURE (5C)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
100
75°C
-55°C
25°C
110°C
110100
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
IF
, FORWARD CURRENT (mA)
DVF/DTA, FORWARD VOLTAGE
TEMPERATURE COEFFICIENT
(mV/5C)
0 5 10 15 20
0
1
2
3
4
5
10 mA
7 mA
5 mA
3 mA
1 mA
0.5 mA
0510
0
5
10
15
20
25
30
FODM214 IF = 1 mA
FODM217 IF = 5 mA
FODM214, FODM217 Series
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Figure 7. Collector Current vs.
Small Collector−Emitter Voltage
Figure 8. Collector Current vs.
Forward Current
Figure 9. Collector Dark Current vs.
Ambient Temperature
Figure 10. Current Transfer Ratio vs.
Forward Current
Figure 11. Collector−Emitter Saturation vs.
Ambient Temperature
Figure 12. Collector Current vs.
Ambient Temperature
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR−CURRENT (mA)
TA, AMBIENT TEMPERATURE (5C)
TA, AMBIENT TEMPERATURE (5C)
VCE(SAT), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
ICEO, COLLECTOR DARK
CURRENT (A)
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (5C)
IF
, FORWARD CURRENT (mA)
IF
, FORWARD CURRENT (A)
CTR − CURRENT TRANSFER RATIO (%)
0.0001 0.001 0.01 0.1
0.0001
0.001
0.01
0.1 10 V 5 V
VCE
= 0.4 V
−25 0 25 50 75 100
1E−11
1E−10
1E−9
1E−8
1E−7
1E−6
1E−5
24 V
10 V
5 V
VCE
= 48 V
0.0001 0.001 0.01 0.1
10
100
1000
10 V
5 V
VCE
= 0.4 V
−250 255075100
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
IF = 20 mA
IC = 1 mA
IF = 1 mA
IC
= 0.2 mA
IF
= 8 mA
IC
= 2.4 mA
−25 0 25 50 75 100
0.1
1
10
100
20 mA
10 mA
5 mA
1 mA
IF
= 0.5 mA
0.0 0.5 1.0
0
5
10
15
20
25
30
FODM214 IF = 1 mA
FODM217 IF = 5 mA
FODM214, FODM217 Series
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Figure 13. Switching Time vs. Load Resistance Figure 14. Switching Time vs. Ambient
Temperature
RL, LOAD RESISTANCE (kW)
t, SWITCHING TIME (ms)
TA, AMBIENT REMPERATURE (5C)
1 10 100
0.1
1
10
100
1000
TA = 25 °C
VCC
= 5 V
IF
= 16 mA
tF
tR
tOFF
tON
−25 0 25 50 75 100
1
10
100
VCC
= 10 V
IC
= 2 mA
RL
= 100
tF
tR
tOFF
tON
t, SWITCHING TIME (ms)
W
TEST CIRCUIT
Figure 15. Test Circuit for Switching Time
1
2
4
3
RM
RL
VCC
IFMonitor
VO
VO
IF
90%
10%
tON tOFF
tRtF
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REFLOW PROFILE
Figure 16. Reflow Profile
Profile Freature Pb−Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp−up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL)60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C30 seconds
Ramp−down Rate (TP to TL) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
ORDERING INFORMATION (Note 5)
Part Number Package Packing Method
FODM214A SOP 4−Pin Tube (100 units)
FODM214AR2 SOP 4−Pin Tape and Reel (3000 units)
FODM214AV SOP 4−Pin, DIN EN/IEC60747−5−5 Option Tube (100 units)
FODM214AR2V SOP 4−Pin, DIN EN/IEC60747−5−5 Option Tape and Reel (3000 units)
5. The product orderable part number system listed in this table also applies to the FODM214, FODM217A, FODM217B, FODM217C, and
FODM217D products.
FODM214, FODM217 Series
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PACKAGE DIMENSIONS
MFP4 2.5x4.4, 1.27P
CASE TBD
ISSUE TBD
1.27
1.52
4.837.87
0.61
TOP VIEW
FRONT VIEW SIDE VIEW
LAND PATTERN RECOMMENDATION
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
D. DRAWING FILENAME: MKT−MFP04Drev
A
1
3
2
4
2.60±0.30
2.00±0.20
0.1±0.10
1.27±0.25
4.40±0.20
0.40±0.10
5.44±0.30
7±0.45
0.25±0.05
DETAIL A
SEATING
PLANE
MIN 0.5 0.127
4°
1.30±0.30
GAGE
PLANE
DETAIL A
FODM214, FODM217 Series
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FODM214/D
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