intersil Data Sheet 15A, 400V - GOOV Ultrafast Dual Diodes MUR3040PT, RURH1540CC, MUR3060PT, and RURH1560CC are ultrafast dual diodes (t, < 55ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits thus reducing power loss in the switching transistor. Formerly developmental type TA09905. Ordering Information PART NUMBER PACKAGE BRAND MUR3040PT TO-218AC MUR3040PT RURH1540CC TO-218AC RURH1540C MUR3060PT TO-218AC MUR3O60PT RURH1560CC TO-218AC RURH1560C NOTE: When ordering, use the entire part number. Symbol AY A2 MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC January 2000 File Number 2774.4 Features * Ultrafast with Soft Recovery................05. <55ns * Operating Temperature. ...........0 00 ccc ee eee 175C * Reverse Voltage Up to... 0... eee ee eee 600V + Avalanche Energy Rated Planar Construction Applications * Switching Power Supply * Power Switching Circuits * General Purpose Packaging JEDEC TO-218AC ANODE 1 CATHODE ANODE 2 CATHODE (FLANGE) Absolute Maximum Ratings (Per Leg) Tc = 25C, Unless Otherwise Specified Peak Repetitive Reverse Voltage. ....... 2... 0c cn ccc eee Working Peak Reverse Voltage Average Rectified Forward Current ...... 0... cece cece eee eee (Tc = 145C) Repetitive Peak Surge Current 1.0.00... . cece cece eee eens (Square Wave 20kHz) Nonrepetitive Peak Surge Current... 0.0... ccc cece ce cee eee eaee (Halfwave 1 Phase 60Hz) Maximum Power Dissipation .........0..0 0.00... c cece e ee eee tenes Avalanche Energy (See Figures 7 and 8) ........ 0... eee eee ee Operating and Storage Temperature................-2. 02s eee DC Blocking Voltage .... 6... ce ce eee ete eens MUR3040PT MUR3060PT RURH1540CC RURH1560CC UNITS VeRM 400 600 Vv VRWM 400 600 Vv VR 400 600 Vv IF(AV) 15 15 A lFRM 42 30 A lesm 200 200 A Pp 100 100 Ww Eavt 20 20 mJ Tsta: Ty -55 to 175 -55 to 175 C 1-888-INTERSIL or 321-724-7143 | Copyright Intersit Corporation 2000 MB 4302271 0104658 126 MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Electrical Specifications (PerLeg) Tc = 25C, Unless Otherwise Specified MUR3040PT, RURH1540CC MUR3060PT, RURH1560CC SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX UNITS VE tp = 15A - - 1.25 - - 15 Vv Ip = 15A, Te = 150C - - 1.12 - - 1.2 Vv Ir Vr = 400V - - 100 - - - HA Vr = 600V - - : - - 100 pA Vr = 400V, To = 150C - - 500 - - - pA Ve = 600V, Tc = 150C - - - - - 500 pA ter Ip = 1A, dig/dt = 100A/us - - 55 - - 55 ns tp = 15A, dig/dt = 100A/rs - - 60 - - 60 ns ta ip = 15A, dig/dt = 100A/is - 30 - - 30 - ns th Ip = 15A, dip/dt = 100A/us - 17 - - 20 - ns Rec - - 1.5 - - 15 Cw DEFINITIONS Ve = Instantaneous forward voltage (pw = 300us, D = 2%). Ip = Instantaneous reverse current. tr = Reverse recovery time at dif/dt = 100A/us (See Figure 6), summation of tg + ty. tg = Time to reach peak reverse current at dif/dt = 100A/s (See Figure 6). th = Time from peak Ipy to projected zero crossing of IRyy based on a straight line fram peak Ixy through 25% of Ip (See Figure 6). Rgic = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 80 500 100 z < kK & 5 10 x vd & e o 10 2 1.0 a w 3 f 0.1 6 a + 0.01 1 0.001 0 0.5 4.0 4.5 2.0 0 100 200 300 400 500 600 Ve, FORWARD VOLTAGE (V) Vp, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersil MM 4302271 0104655 Ob4 me MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Typical Performance Curves 60 50 40 30 t, TIME (ns) 20 10 4 10 20 If, FORWARD CURRENT (A} FIGURE 3. t,;, tg AND t, CURVES vs FORWARD CURRENT Test Circuits and Waveforms Vee AMPLITUDE AND Rg CONTROL dir/dt ty AND te CONTROL IF DUT CURRENT Rg SENSE ow] A t* Voce = Yoo 14 \ \ IGBT - io > FIGURE 5. t,, TEST CIRCUIT 1=4A L=40mH R<0.1Q Eave = V2L (VR(avLyVR(avi) - Yop) Qy = IGBT (BVceEs > DUT Vriav)) CURRENT FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT Ie{avy, AVERAGE FORWARD CURRENT (A) 120 130 140 150 160 170 180 Tc, CASE TEMPERATURE (C) FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t,, WAVEFORMS AND DEFINITIONS VAVL 7EN tt wee Pa iv . X KL te ty ta t-> FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All intersil semiconductor products are manufactured, assembled and tested under 1ISQ9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design andlor specifications at any time with- out notice. Accordingly, the reader is cautioned to varify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 intersil mma 4302271 C1O4Lb0 446