SHANGHAI SUNRISE ELECTRONICS CO., LTD.
VOLTAGE: 20 TO 60V CURRENT: 1.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250oC/10sec/0.375"
(
9.5mm
)
lead len
g
th
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL SB
120 SB
130 SB
140 SB
150 SB
160 UNITS
Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 V
Maximum RMS Voltage VRMS 14 21 28 35 42 V
Maximum DC Blocking Voltage VDC 20 30 40 50 60 V
Maximum Average Forward Rectified Current
(9.5mm lead length,at TL=100oC
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 1.0A DC) VFV
Maximum DC Reverse Current Ta=25oCmA
(at rated DC blocking voltage) Ta=100oCmA
Typical Junction Capacitance (Note 1) CJpF
Typical Thermal Resistance (Note 2) R(ja) oC/W
Operating Junction Temperature TJoC
Storage Temperature TSTG oC
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
http://www.sse-diode.com
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
SB120 THRU SB160
SCHOTTKY BARRIER
RECTIFIER
RATINGS
A
-65 to +150-65 to +125
0.5
A
1.0
10.0
110
0.7
40.0
IFSM
-65 to +150
1.0
IF(AV)
IR
50
TECHNICAL
SPECIFICATION
DO - 41
Dimensions in inches and (millimeters)
