Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode = CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 0 12A and 14A, 60V - 100V 'ps(On) = 0.18. Q and 0.259 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics 3 @ High input impedance 9208-33741 m@ Majority carrier device TERMINAL DIAGRAM The 2N6755 and 2N6756 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching TERMINAL DESIGNATION converters, motor drivers, relay drivers, and drivers for DRAIN high-power bipolar switching transistors requiring high SOURCE (FLANGE ) speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel O package. GATE 92Cs- 3780! JEDEC TO-204AA Absolute Maximum Ratings Paramuter 2N6755 v Drain Source Voltage 60 Drain - Gate Voltage 60 ws Drain Current 12 Continuous Drain 8.0" Pulsed 5 Gate Source Voltage 420 Dissipation 75 (See Fig. 11) 30 (See Fig. 11) {See WwW and -85* to 180 Storage Ternperature Range 3-472Standard Power MOSFETs 2N6755, 2N6756 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max. Units Test Conditions BVpss rain Source Breakdown Voltege | 2N6755 | 60 = ~ Vv | Vgs-0 2N6756 | 100 - - Vo] ip + 1.0 mA Vsith) Gate Threshold Voltage ALL 2.0" ~ 4.0" Vv | Vos ~*~ Ves. Ip 2 mA lgsse Gate ~ Body Leakage Forward ALL ~ 100 aa | Vgs = 20V IGssn Gate Body Leakage Reverse ALL ~ = 100 nA | Vgg = -20V : logs Zero Gate Voltage Drain Current ALL - 0.1 1.0 mA | Vog = Max. Rating, Vgg = 0 - 0.2 4.0 mA | Vgg = Max. Rating, Vgg = 0, Te = 125C Vpston) vate Os On-State 2N6755 - - 3.0 v Vgg 7 10V, tp = 112A 2N6756 = = 252 Vv | Veg = 19. Ip = 144 Rpston} Static Drain-Source Or-State 2N6755 - 0.20 | 0.25 2 | Vgg = 10V, Ip = BA Fasintance (7) = . z ; 2N6756 014 | 0.18 2 [Vg = 10V, Ip = 9A Rosion) Static Drain-Source On-State 2N6755 - - 0.45 2 Vgg = 10V, Ip BA, To = 125C Resistance (1) 2N6756 = = 0.33 a Vas 10V, Ip = 9A, Te = 125C 5 Forward Tcansconductance (7) ALL 4.0" 5.5 | 12.0 | S(t) | Vg = 15V, Ip = 9a Cigs Input Capacitance ALL 350 600 800 pF Vgg 0. Vag = 25V. 4 = 1.0 M2 Coss Output Capacitance ALL ae Be a er Cres Reverse Transfer Capacitance ALL so | 100 | 150 oF ta ton) Turn-On Delay Time ALL - = 30 es | Vo 2 36Y, Ip = 9A, Zy = 150 tt Rise Tima ALL - - 75 ns {See Figs. 13 and 14) Tg toft) Turn-Oft Delay Time ALL ~ = 40 ns | (MOSFET switching times are essentially % Fall Time ALL = = 45 ns | independent of operating temperature.) Thermal Resistance Amuc Junction-to-Case ALL _ - 167" | C/W Rincs Case-to-Sink ALL - O14 - C/W | Mounting surface flat, smooth, and greased. Rinsa Junction-ta-Ambient ALL - - 30 | C/W [ Free Air Operation Body-Drain Diode Ratings and Characteristics 1s Continuous Source Current 2NG755 = = 12 A | Modified MOSFET symbol o (Body Diode! anerss {| = [ ~ | 14 coverse PN junction rectifier gna Pulsed Source Current 2N6755 = 25 A G {Body Diode) 2N6756 = = 30 s Vsp Diode Forward Voltage (4) 2ne755 | oss" | ~ 178 V__| Te = 286, Ig = 128, Vag = 9 2n6756 [ 090 | - 18 Vo | Te: 25C, Ie - 144, Vag 0 tee Reverse Recovery Time ALL - 300 ms | Ty = 150C, Ip = tggy, dig sdt = 100 Alus QpR Reverse Recovered Charge ALL = 40 ~ uC | Ty = 190C, Ip = iggy, dip /dt = 100 Alus *JEDEC registered values. oO Pulse Test: Pulse Width < 300 usec, Duty Cycle & 2% VARY ty TO OBTAIN REQUIRED PEAK t, y r os , mz 1) =0.58Vos5 our 1 ve + 0.758y; Vgg + 20V boty == c Dss _ L_ \ ' _ Fig. 1 Clamped Inductive Test Circuit Fig. 2 Clamped inductive Waveforms tp. ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 0 10 20 30 a 50 0 2 6 6 to Vpg. ORAIN-TD SOURCE VOLTAGE (VOLTS! Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics Fig. 4 Typical Transfer Characteristics 3-473Standard Power MOSFETs 2N6755, 2N6756 10 80 ys PULSE TEST 8 a 3 a $ = 2 = = = <6 . = z= & = = = = S S a 3 z 4 3 =< = = 5 5 8 . s 2 0 oa as 12 16 20 9 o4 os 4a 16 20 Vps, DAAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN.TO- SOURCE VOLTAGE (VOLTS) . - . a . os . , Fig. 6 Typical Saturation Characteristics Fig. 5 Typical Saturation Characteristics {2N6756) {2N6755) 50 10 20 a 8 a = = z 2 10 2 = g 6 2 5 g% 3 Ss 3 3 2 g z 2 = = So 20 = a = = z Vps* 15V 2 80 ys PULSE TEST 10 as 0 5 10 15 20 2 4.0 5.0 10 2 50 100 200 Ip, DRAIN CURRENT (AMPERES) Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area ae - ef fe ote ff 3 + + 4+. 2 Z / & 14h-- + | A 2 - 2 ' -~L A s oo ~~ SS ab L ZA 3 Sz a 2 ae a 4 5 es "| = Sz gz pp el. s & | z = oe a Vos = tov E08 Fat TT Ty - 9A Po Pi | t a 02 -40 0 40 80 120 160 0 10 28 30 0 50 Ty, JUNCTION TEMPERATURE (C) Vps. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig.9N lized Typical On-Resi Vs. Te Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 3-474Standard Power MOSFETs Po, POWER DISSIPATION (WATTS) o 20 40 60 80 100 120 140 Tc. CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve Vop = 36V 42 PRE = TkHz v, vi 0 , to scope Fig. 13 Switching Time Test Circuit 2N6755, 2N6756 26756 2N6756 Ty= 180C Ty = 2506. Ig, SOURCE CURRENT (AMPERES) 0 1 z Vp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage tp - PULSE WIDTH YGS ton) 90% INPUT, Vj 50% 10% Vas jot ~nd INPUT PULSE INPUT PULSE ~ "RISE TIME FALL TIME i (ont c a (off) ty >| t Vos {off} To OUTPUT, Vp 90% VS (on) --> LL ton [a tos ~ Fig. 14 Switching Time Waveforms 3-475High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65