TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES LEVELS 2N3960 2N3960UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Total Power Dissipation @ TA = +25C PT (1) 0.4 W Top, Tstg -65 to +200 C Operating & Storage Junction Temperature Range TO-18 - 2N3960 Note: Derate linearly 2.3mW/C above TA = +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 12 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10Adc UB - 2N3960UB Collector-Base Cutoff Current VCB = 20Vdc ICBO Emitter-Base Cutoff Current VEB = 4.5Vdc IEBO Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc ICEX1 ICEX2 T4-LDS-0161 Rev. 1 (100514) Vdc 10 Adc 10 Adc 1 5 Adc Adc Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1mAdc, VCE = 1Vdc IC = 10mAdc, VCE = 1Vdc 40 hFE Base-Emitter Saturation Voltage VCE = 1.0Vdc, IC = 1.0mAdc VCE = 1.0Vdc, IC = 3.0mAdc 300 30 IC = 30mAdc, VCE = 1Vdc Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 0.1mAdc IC = 30mAdc, IB = 3.0mAdc 60 VCE(sat) 0.2 0.3 Vdc VBE(sat) 0.8 1.0 Vdc Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small - Signal Short - Circuit - Forward Current Transfer Ratio IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz Symbol |hfe| Min. 13 14 12 Output Capacitance VCB = 4Vdc, IE = 0, 100kHz f 1.0MHz Cobo 2.5 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz Cibo 2.5 pF T4-LDS-0161 Rev. 1 (100514) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45 TP 45 TP Note 6 7,11 7 12 7 7 5 4 3 9 10 6 NOTES: 1. * 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. Measured in a zone beyond .250 (6.35 mm) from the seating plane. 12. Measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane. * 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * 14. Lead 1 = emitter, lead 2 = base, and case is collector. *FIGURE 1. Physical dimensions (similar to TO-18) T4-LDS-0161 Rev. 1 (100514) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 0.17 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .306 .022 .559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metalized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, 2N3960UB, surface mount T4-LDS-0161 Rev. 1 (100514) Page 4 of 4