TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
T4-LDS-0161 Rev. 1 (100514) Page 1 of 4
DEVICES LEVELS
2N3960 2N3960UB JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 12 Vdc
Collector-Base Voltage VCBO 20 Vdc
Emitter-Base Voltage VEBO 4.5 Vdc
Total Power Dissipation @ TA = +25°C PT (1) 0.4 W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C
Note:
Derate linearly 2.3mW/°C above TA = +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10μAdc V(BR)CEO 12 Vdc
Collector-Base Cutoff Current
VCB = 20Vdc ICBO
10
μAdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc IEBO
10
μAdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
VCE = 10Vdc, VBE = 2.0Vdc
ICEX1
ICEX2
1
5
μAdc
ηAdc
TO-18 – 2N3 9 60
UB – 2N3960UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0161 Rev. 1 (100514) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current T ransfer Ratio
IC = 1mAdc, VCE = 1Vdc 40
IC = 10mAdc, VCE = 1Vdc 60 300
IC = 30mAdc, VCE = 1Vdc
hFE
30
Collector-Emitter Saturation Voltage
IC = 1.0mAdc, IB = 0.1mAdc
IC = 30mAdc, IB = 3.0mAdc VCE(sat) 0.2
0.3 Vdc
Base-Emitter Saturation Voltage
VCE = 1.0Vdc, IC = 1.0mAdc
VCE = 1.0Vdc, IC = 3.0mAdc VBE(sat) 0.8
1.0 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small – Signal Short – Circuit - Forward Current Transfer
Ratio
IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz
|hfe| 13
14
12
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1. 0M Hz Cobo 2.5 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 2.5 pF
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0161 Rev. 1 (100514) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
* 2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within
.007 inch (0.18
mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm) .
10. Symbol r applied to both inside corners of tab.
11. Measured in a zone beyond .250 (6.35 mm) from the seating plane.
12. Measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane.
* 13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* 14. Lead 1 = emitter, lead 2 = base, and case is collector.
*FIGURE 1. Physical dimensions (similar to TO-18)
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .178 .195 4.52 4.95
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84
LC .100 TP 2.54 TP 6
LD .016 .021 0.41 0.53 7,11
LL .500 .750 12.70 19.05 7
LU .016 .019 0.41 0.48 12
L1 .050 1.27 7
L2 .250 6.35 7
P .100 2.54 5
Q .040 1.02 4
TL .028 .048 0.71 1.22 3
TW .036 .046 0.91 1.17 9
r .010 0.25 10
α 45° TP 45° TP 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0161 Rev. 1 (100514) Page 4 of 4
Dimensions Dimensions
Symbol Inches Millimeters Note Symbol Inches Millimeters
Note
Min Max Min Max Min Max Min Max
BH .046 .056 1.17 1.42 LS1 .036 .040 0.91 1.02
BL .115 .128 2.92 3.25 LS2 .071 .079 1.81 2.01
BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61
CL .128 3.25
r .008 .203
CW .108 2.74
r1 .012 .306
LL1 .022 .038 0.56 0.96 r2 .022 .559
LL2 0.17 .035 0.43 0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, 2N3960UB, surface mount
