SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS COMPLEMENTARY TYPES
BC846AZ1A BC848B1K BC846 BC856
BC846B1B BC848CZ1L BC847 BC857
BC847AZ1E BC849B2B BC848 BC858
BC847B1F BC849C2C BC849 BC859
BC847C1GZ BC850B2FZ BC850 BC860
BC848A1JZ BC850C-Z2G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT
Collector-Base Voltage VCBO 80 50 30 30 50 V
Collector-Emitter Voltage VCES 80 50 30 30 50 V
Collector-Emitter Voltage VCEO 65 45 30 30 45 V
Emitter-Base Voltage VEBO 65V
Continuous Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage
Temperature Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current ICBO Max 15 nA VCB = 30V
Max 5 µAVCB = 30V
Tamb
=150°C
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
90
250
mV
mV
IC
=10mA,
IB
=0.5mA
Typ
Max.
200
600
mV
mV
IC
=100mA,
IB
=5mA
Typ
Max.
300
600
mV
mV
IC
=10mA*
Base-Emitter
Saturation Voltage
VBE(sat) Typ 700 mV IC
=10mA,
IB
=0.5mA
Typ 900 mV IC
=100mA,
IB
=5mA
Base-Emitter Voltage VBE Min
Typ
Max
580
660
700
mV
mV
mV
IC
=2mA
VCE=5V
Max 770 mV IC
=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC
= 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
BC846 BC847
BC848 BC849
BC850
C
B
E
SOT23
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Dynamic Group VI
Characteristics
Group A
Group B
Group C
hie Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
kΩ
kΩ
kΩ
VCE=5V
Ic=2mA
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
kΩ
kΩ
kΩ
Min
Typ
Max
3.2
4.5
8.5
kΩ
kΩ
kΩ
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
kΩ
kΩ
kΩ
Group VI
Group A
Group B
Group C
hre Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
3
2
3
2
3
x10-4
x10-4
x10-4
x10-4
Group VI
Group A
Group B
Group C
hfe Min
Typ
Max
75
110
150
75
110
150
75
110
150
Min
Typ
Max
125
220
260
125
220
260
125
220
260
Min
Typ
Max
240
330
500
Min
Typ
Max
450
600
900
450
600
900
450
600
900
450
600
900
Group VI hoe Typ
Max
20
40
20
40
20
40
µs
µs
Group A Typ
Max
18
30
18
30
18
30
µs
µs
Group B Typ
Max
30
60 µs
µs
Group C Typ
Max
60
110
60
110
60
110 µs
µs
BC846 BC847
BC848 BC849
BC850
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Static Group VI
Forward
Current Ratio
hFE Min
Typ
Max
75
110
150
75
110
150
75
110
150
IC
=2mA, VCE=5V
Group A hFE Typ909090 I
C
=0.01mA, VCE=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
IC
=2mA, VCE=5V
Typ 120 120 120 IC
=100mA, VCE=5V
Group B hFE Typ 150 IC
=0.01mA, VCE=5V
Min
Typ
Max
200
290
450
IC
=2mA, VCE=5V
Typ 200 200 200 IC
=100mA, VCE=5V
Group C hFE Typ. 270 270 270 270 IC
=0.01mA, VCE=5V
Min
Typ
Max
420
500
800
420
500
800
420
500
800
420
500
800
IC
=2mA, VCE=5V
Typ 400 IC
=100mA, VCE=5V
Transition Frequency fTTyp 300 MHz IC
=10mA, VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo Typ
Max
2.5
4.5
pF
pF
VCB=10V f=1MHz
Emitter-Base
Capacitance
Cib0 Typ 9 pF VEB
=0.5V f=1MHz
Noise Figure N Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
VCE = 5V, IC
=200µA,
RG
=2kΩ, f=1kHz,
∆f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
VCE = 5V, IC
=200µA,
RG
=2kΩ, f=30Hz to
15kHz at -3dB
points
Equivalent Noise
Voltage
enMax. 110 110 nV VCE = 5V, IC
=200µA,
RG
=2kΩ, f=10Hz to
50Hz at -3dB
points
BC846 BC847
BC848 BC849
BC850
Spice parameter data is available upon request for this device
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Dynamic Group VI
Characteristics
Group A
Group B
Group C
hie Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
kΩ
kΩ
kΩ
VCE=5V
Ic=2mA
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
kΩ
kΩ
kΩ
Min
Typ
Max
3.2
4.5
8.5
kΩ
kΩ
kΩ
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
kΩ
kΩ
kΩ
Group VI
Group A
Group B
Group C
hre Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
3
2
3
2
3
x10-4
x10-4
x10-4
x10-4
Group VI
Group A
Group B
Group C
hfe Min
Typ
Max
75
110
150
75
110
150
75
110
150
Min
Typ
Max
125
220
260
125
220
260
125
220
260
Min
Typ
Max
240
330
500
Min
Typ
Max
450
600
900
450
600
900
450
600
900
450
600
900
Group VI hoe Typ
Max
20
40
20
40
20
40
µs
µs
Group A Typ
Max
18
30
18
30
18
30
µs
µs
Group B Typ
Max
30
60 µs
µs
Group C Typ
Max
60
110
60
110
60
110 µs
µs
BC846 BC847
BC848 BC849
BC850
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Static Group VI
Forward
Current Ratio
hFE Min
Typ
Max
75
110
150
75
110
150
75
110
150
IC
=2mA, VCE=5V
Group A hFE Typ909090 I
C
=0.01mA, VCE=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
IC
=2mA, VCE=5V
Typ 120 120 120 IC
=100mA, VCE=5V
Group B hFE Typ 150 IC
=0.01mA, VCE=5V
Min
Typ
Max
200
290
450
IC
=2mA, VCE=5V
Typ 200 200 200 IC
=100mA, VCE=5V
Group C hFE Typ. 270 270 270 270 IC
=0.01mA, VCE=5V
Min
Typ
Max
420
500
800
420
500
800
420
500
800
420
500
800
IC
=2mA, VCE=5V
Typ 400 IC
=100mA, VCE=5V
Transition Frequency fTTyp 300 MHz IC
=10mA, VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo Typ
Max
2.5
4.5
pF
pF
VCB=10V f=1MHz
Emitter-Base
Capacitance
Cib0 Typ 9 pF VEB
=0.5V f=1MHz
Noise Figure N Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
VCE = 5V, IC
=200µA,
RG
=2kΩ, f=1kHz,
∆f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
VCE = 5V, IC
=200µA,
RG
=2kΩ, f=30Hz to
15kHz at -3dB
points
Equivalent Noise
Voltage
enMax. 110 110 nV VCE = 5V, IC
=200µA,
RG
=2kΩ, f=10Hz to
50Hz at -3dB
points
BC846 BC847
BC848 BC849
BC850
Spice parameter data is available upon request for this device