POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 AR1101 Repetitive voltage up to Mean forward current Surge current 1000 V 2250 A 28 kA FINAL SPECIFICATION ago 02 - ISSUE : 05 Symbol Characteristic Tj [C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 175 1000 V V RSM Non-repetitive peak reverse voltage 175 1100 V I RRM Repetitive peak reverse current 175 50 V=VRRM mA CONDUCTING I F (AV) Mean forward current 180 sin ,50 Hz, Th=55C, double side cooled 2250 A I F (AV) Mean forward current 180 sin ,50 Hz, Tc=85C, double side cooled 2130 A I FSM Surge forward current Sine wave, 10 ms without reverse voltage 28 kA I t I t V FM Forward voltage V F(TO) r F Forward current = 175 3920 x 1E3 1800 A As 25 1.07 V Threshold voltage 175 0.75 V Forward slope resistance 175 0.125 mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current s 175 C A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T Operating junction temperature F j 37 C/kW 7 C/kW -30 / Mounting force 11.8 Mass 300 ORDERING INFORMATION : AR1101 S 10 standard specification VRRM/100 175 C / 13.2 kN g AR1101 RECTIFIER DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ago 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 190 170 150 130 110 90 30 60 70 90 120 180 DC 50 0 500 1000 1500 2000 2500 3000 IF(AV) [A] PF(AV) [W] 4000 DC 3000 90 120 180 60 30 2000 1000 0 0 500 1000 1500 2000 IF(AV) [A] 2500 3000 3500 4000 AR1101 RECTIFIER DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ago 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 190 170 150 130 110 30 60 90 90 120 70 180 50 0 500 1000 1500 2000 2500 3000 2500 3000 IF(AV) [A] PF(AV) [W] 4000 3000 180 90 2000 120 60 30 1000 0 0 500 1000 1500 IF(AV) [A] 2000 AR1101 RECTIFIER DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION ago 02 - ISSUE : 05 FORWARD CHARACTERISTIC Tj = 175 C SURGE CHARACTERISTIC Tj = 175 C 7000 30 25 5000 20 4000 ITSM [kA] Forward Current [A] 6000 3000 15 10 2000 5 1000 0 0 0.6 1.1 1.6 1 Forward Voltage [V] 10 n cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 40.0 35.0 Zth j-h [C/kW] 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100