RECTIFIER DIODE AR1101
Repetitive voltage up to 1000 V
Mean forward current 2250 A
Surge current 28 kA
FINAL SPECIFICATION
ago 02 - ISSUE : 05
Symbol Characteristic Conditions Tj
[°C] Value Unit
BLOCKING
VRRM Repetitive peak reverse voltage 175 1000 V
VRSM Non-repetitive peak reverse voltage 175 1100 V
IRRM Repetitive peak reverse current V=VRRM 175 50 mA
CONDUCTING
IF (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 2250 A
IF (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 2130 A
IFSM Surge forward current Sine wave, 10 ms 175 28 kA
I² t I² t
without reverse voltage
3920 x 1E3 A²s
VFM Forward voltage Forward current = 1800 A 25 1.07 V
VF(TO) Threshold voltage 175 0.75 V
rFForward slope resistance 175 0.125 mohm
SWITCHING
t rr Reverse recovery time µs
Q rr Reverse recovery charge 175 µC
I rr Peak reverse recovery current A
MOUNTING
Rth(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 37 °C/kW
Rth(c-h) Thermal impedance Case to heatsink, double side cooled 7 °C/kW
TjOperating junction temperature -30 / 175 °C
F Mounting force 11.8 / 13.2 kN
Mass 300 g
ORDERING INFORMATION : AR1101 S 10
standard specification VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180°
120°
90°
60°
30°
0
1000
2000
3000
4000
0 500 1000 1500 2000 2500 3000 3500 4000
IF(AV) [A]
PF(AV) [W]
180°
120°
90°
60°
30°
50
70
90
110
130
150
170
190
0 500 1000 1500 2000 2500 3000
IF(AV) [A]
Th [°C]
DC
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
180°
120°
90°
60°
30°
0
1000
2000
3000
4000
0 500 1000 1500 2000 2500 3000
IF(AV) [A]
PF(AV) [W]
120°
90°
60°
30°
50
70
90
110
130
150
170
190
0 500 1000 1500 2000 2500 3000
IF(AV) [A]
Th [°C]
180°
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
Distributed by
FORWARD CHARACTERISTIC
Tj = 175 °C
0
1000
2000
3000
4000
5000
6000
7000
0.6 1.1 1.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.001 0.01 0.1 1 10 100
t[s]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
Tj = 175 °C
0
5
10
15
20
25
30
1 10 100
n° cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
