TOSHIBA 2$D553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2$D553 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS POWER AMPLIFIER APPLICATIONS Unit in mm 10.3MAX, $3.640.2 Low Saturation Voltage : VCE (sat)=0-4V (Max.) (at I=4A) pepe ol [ey @ Complementary to 2SB553. s - s > x SSS 13,0MIN 2 COLLECTOR (HEAT SINK) MAXIMUM RATINGS (Ta =25C) 3. EMITTER CHARACTERISTIC SYMBOL | RATING | UNIT ||JEDEC TO-220AB Collector-Base Voltage VcCBO 70 Vv BIAS SC-46 Collector-Emitter Voltage VCEO 50 Vv TOSHIBA __2-10A1A Emitter-Base Voltage VEBO Vv Weight : 1.9g Collector Current Ic 7 A | Mounting Kit No. AC75 Base Current Ip A Collector Power Ta=25C 1.5 Dissipation Te=25C Pe 40 Ww Junction Temperature Tj 150 C Storage Temperature Range Tstg 55~150 C 961001 EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/4 TOSHIBA 2$D553 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo VcB=T0V, In=0 380 | wA Emitter Cut-off Current IgBO VEB=5V, Ic =0 50 | vA Collector-Emitter Breakdown Voltage V (BR) CEO |Ic=50mA, Ip=0 50 Vv FE (1) VcE=1V, Ic=1A 7 | 24 DC Current Gain (Note) CE c hFR(2) | VcR=1V, Ic=4A 30 Collector-Emitter Saturation Voltage VCE (sat) |Ic=4A, Ip=0.4A _ 0.2 0.4 Vv Base-Emitter Saturation Voltage VBE (sat) |Ic=4A, Ip=0.4A _ 0.9 1.2 Vv Transition Frequency fr VcE=4V, Ic=1A _ 10 | MHz Collector Output Capacitance Cob VcB=10V, In=0, f=1MHz 250 pF . IN- OUT- Turn-on Time ton 204s put Ipi_-PUT _ 0.2 _ Switching St Ty t TBI T/A Ipe S 2.5 Time Orage i1me stg Ip2 7 _ . pS Vcc =30V . Ipi= [p2=0.3A, Fall T. t 0.5 ome f DUTY CYCLE<1% Note : hyg (1) Classification O : 70~140, Y : 120~240 1997-02-03 2/4 TOSHIBA VCE - Ic COMMON EMITTER Te=25C COLLECTOR-EMITTER VOLTAGE Vopr (V) 0 1 2 3 4 5 6 7 COLLECTOR CURRENT Ic (A) VCE Ic COMMON EMITTER Te= 55C COLLECTOR-EMITTER VOLTAGE Vog (V) 0 1 2 3 4 5 6 7 COLLECTOR CURRENT Ic (A) VCE (sat) Ic COMMON EMITTER 9.5) Iq/Ip=10 0.3 0.1 Te=100C 0.05 0.03 25 55 0.01 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (VY) COLLECTOR CURRENT Ig (A) COLLECTOR-EMITTER VOLTAGE Veg (V) DC CURRENT GAIN hpE BASE-EMITTER SATURATION VOLTAGE VBE (sat) (V) 2$D553 VCE - Ic 1.2 COMMON EMITTER 1.0 Te=100C 08 50 f 70/100 20 30 0.6 0.4 0.2 0 1 2 3 4 5 6 7 COLLECTOR CURRENT Ic (A) hre Ic COMMON EMITTER VoE=1V Te=100C Be 50 25 30 55 10 5 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT Iq (A) VBE (sat) Ic COMMON EMITTER 5) I/Ip=10 10 tL Te= 55C 0.5 0.3 25 100 0.1 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT Ic (A) 1997-02-03 3/4 TOSHIBA 2$D553 Ic VBE SAFE OPERATING AREA 20 COMMON EMITTER | | | | | | | VcE=1V 10 Ic MAX. (PULSED) K | | | x \ : ts Ny si z 2. I MAX. S X NS 10ms% ~ ~ (CONTINUOUS) NATTY 100msx e e 3 TI \ y, &, DC OPERATION \\\ \ Te= 100C re Te=25C \ 5 5 5 5G \ & es Co 5 5 AAA oa & XY 4 3 05 iY 8 8 XX SINGLE NONREPETITIVE \ \ 0.3 PULSE Tc=25C \\ CURVES MUST BE DERATED \ LINEARLY WITH INCREASE \ ot IN TEMPERATURE. Voro MAX. 0 0.4 0.8 12 16 2.0 A 3 10 30 100 BASE-EMITTER VOLTAGE VpE (CV) COLLECTOR-EMITTER VOLTAGE VoE (WV) Pc Ta 44 | | Te=Ta INFINITE HEAT SINK 40 300x300x2mm A HEAT SINK NX | 200%200x2mm A HEAT SINK \(| @ 150%150x2mm A HEAT SINK ge 36 i 100x100X2mm A HEAT SINK ~ N 70X70X2mm A@ HEAT SINK & 32 @ 50x50X2mm A HEAT SINK & \ @ 35x35xX1mm Ae E 28 HEAT SINK a @ 25x25x1mm A B 24-2) \ HEAT SINK a s \_| (9 NO HEAT SINK e 8 \ SB 20k = EN N N ae | | ASAIN N wm 16 T < NI & LE \ \ a 12/- | ~~ SO N 2 = = PS RY o BE a PS SN So PWN ORAA \ 4E C= = I 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (C) 1997-02-03 4/4