Micro Sensing Device Data Book OMRON Corporation Industrial Automation Company Sensing Devices Division H.Q. Industrial Sensors Division Industrial Sensors Division Shiokoji Horikawa, Shimogyo-ku, Kyoto, 600-8530 Japan Tel: (81)75-344-7022/Fax: (81)75-344-7107 In the interest of product improvement, specifications are subject to change without notice. Authorized Distributor: Cat. No. X062-E1-05 Printed in Japan 0306-0.1M(C) CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Microphotonic Devices 2 Manuscript Paper Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Photomicrosensors Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Transmissive Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Reflective Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 Emitters and Detectors Emitters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206 General Information Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Security Trade Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 1 Selection Guide Sensing method Transmissive Sensing distance Output configuration Features Page 1.0 mm EE-SX1107 Phototransistor Ultra-compact, surface mounting 72 2.0 mm EE-SX1018 Phototransistor Compact, general purpose 32 EE-SX1049 Phototransistor Compact, general purpose 46 EE-SX1103 Phototransistor Ultra-compact, general purpose 66 EE-SX1105 Phototransistor Ultra-compact, general purpose 68 EE-SX1108 Phototransistor Ultra-compact, surface mounting 76 EE-SX1131 Phototransistor Ultra-compact, surface mounting, dualchannel output 88 EE-SX4134 Photo-IC Ultra-compact, surface mounting 154 EE-SX493 Photo-IC High resolution 146 2.1 mm EE-SX1023-W1 Phototransistor Harness connecting 34 2.8 mm EE-SX1031 Phototransistor Dual-channel output 36 EE-SX1055 Phototransistor Compact, excellent cost performance 48 EE-SX1046 Phototransistor With a horizontal aperture 44 EE-SX1082 Phototransistor With a horizontal aperture 60 EE-SX1106 Phototransistor Ultra-compact, general purpose 70 EE-SX1109 Phototransistor Ultra-compact, surface mounting 80 EE-SX129 Phototransistor High resolution 98 EE-SX198 Phototransistor General purpose 104 EE-SX199 Phototransistor With a positioning boss 106 EE-SX298 Photo-Darlington transistor General purpose 128 EE-SX398/498 Photo-IC General purpose 148 EE-SX1071 Phototransistor General purpose 56 EE-SX1088 Phototransistor Screw mounting 62 EE-SX1096 Phototransistor With a horizontal aperture 64 EE-SX138 Phototransistor Screw mounting 100 EE-SX153 Phototransistor Screw mounting 102 EE-SH3 series Phototransistor Screw mounting 118 EE-SJ3 series Phototransistor Screw mounting 120 3.0 mm 3.4 mm 2 Model EE-SV3 series Phototransistor Screw mounting 126 EE-SX301/401 Photo-IC General purpose 130 EE-SX305/405 Photo-IC With a horizontal aperture 132 EE-SX3088/4088 Photo-IC Screw mounting 138 3.5 mm EE-SX384/484 Photo-IC General purpose 144 3.6 mm EE-SX1057 Phototransistor Dust-proof construction, general purpose 50 EE-SG3(-B) Phototransistor Dust-proof construction 116 4.2 mm EE-SX1128 Phototransistor With a horizontal aperture 86 4.6 mm EE-SX1061 Phototransistor General purpose 52 5.0 mm EE-SX1041 Phototransistor General purpose 40 EE-SX1042 Phototransistor High profile 42 EE-SX1081 Phototransistor General purpose 58 EE-SX1115 Phototransistor High profile with positioning pins 84 EE-SX1137 Phototransistor General purpose 92 EE-SX1235A-P2 Phototransistor Snap-in mounting 96 5.0 mm EE-SJ5-B Phototransistor General purpose 122 3.4 mm EE-SX338 Photo-IC Screw mounting, horizontal aperture 142 Selection Guide Sensing method Transmissive Sensing distance Reflective Output configuration Features Page 5.0 mm EE-SX3081/4081 Photo-IC General purpose 4.0 mm EE-SX3133 Photo-IC Screw mounting, horizontal aperture 140 5.0 mm EE-SX3239-P2 Photo-IC Snap-in mounting 160 EE-SX3009-P1/ 4009-P1 Photo-IC Screw mounting 150 EE-SX4019-P2 Photo-IC Screw mounting 152 EE-SX4235A-P2 Photo-IC Snap-in mounting 158 136 EE-SX460-P1 Photo-IC Snap-in mounting 162 5.2 mm EE-SX1035 Phototransistor Compact, wide 38 8.0 mm EE-SX1070 Phototransistor General purpose 54 EE-SJ8-B Phototransistor High profile 124 EE-SX3070/4070 Photo-IC General purpose 134 12 mm EE-SPX415-P2 Photo-IC Use light modulation built-in Amplifier IC 168 15.0 mm EE-SX461-P11 Photo-IC Easy to mount 164 14 mm EE-SX1140 Phototransistor Wide, high profile 94 108 Actuator mount- --ing Actuator Model --- EE-SA102 Phototransistor General purpose EE-SA104 Phototransistor Compact 110 EE-SA407-P2 Photo-IC Easy to mount 166 112 EE-SA105 Phototransistor General purpose EE-SA113 Phototransistor General purpose 114 EE-SY124 Phototransistor Ultra-compact, general purpose 174 EE-SY125 Phototransistor Ultra-compact, surface mounting 176 EE-SY193 Phototransistor Ultra-compact, surface mounting 188 3.5 mm EE-SY171 Phototransistor Thin 186 4.0 mm EE-SY169 Phototransistor High resolution (red LED) 180 EE-SY169A Phototransistor High resolution (infrared LED) 182 EE-SY169B Phototransistor High resolution (red LED) 184 1.0 mm 4.4 mm 5.0 mm EE-SY113 Phototransistor Dust-proof 172 EE-SY313/413 Photo-IC Dust-proof 198 EE-SY110 Phototransistor General purpose 170 EE-SB5(-B) Phototransistor Screw mounting 192 EE-SF5(-B) Phototransistor Dust-proof 194 EE-SY310/410 Photo-IC General purpose 196 Selection Guide 3 4 Selection Guide Microphotonic Devices Manuscript Paper Sensors EY3A-1051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EY3A-1081 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EY3A-112 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 10 5 Manuscript Paper Sensor (1 Beam: 50 mm) EY3A-1051 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. Positioning boss 7.9 dia. Center of detector 8.3 dia . 3.2+0.2 -0 dia. Center of emitter Pin no. 1 * Ensures higher sensitivity and external light interference resistivity than any other photomicrosensor. * Narrow sensing range ensures stable sensing of a variety of sensing objects. Absolute Maximum Ratings (Ta = 25C) Item Rated value VCC 7V Load voltage VOUT 7V Load current IOUT 10 mA Ambient temperature 15 0.5 Symbol Power supply voltage Operating Topr 0C to 60C Storage Tstg -15C to 70C Note: Make sure there is no icing or condensation when operating the Sensor. 8 dia. 3 +0 -0.2 dia. Pin no. Remarks Name 1 2 O V Output (OUT) Power supply (Vcc) 3 G Ground (GND) Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 0.3 3 mm max. 3 < mm 6 0.375 6 < mm 10 10 < mm 18 0.45 0.55 18 < mm 30 0.65 30 < mm 50 0.8 Recommended Mating Connectors: Japan Molex 51090-0300 (crimp connector) 52484-0310 (press-fit connector) Electrical and Optical Characteristics (Ta = 0C to 60C) Item Value Condition Power supply voltage 5 V 5% --- Current consumption 50 mA max. VCC = 5 V, RL = Peak current consumption 200 mA max. VCC = 5 V, RL = Low-level output voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1) High-level output voltage 3.5 V min. VCC = 5 V, RL = 4.7 k (see note 2) Response delay time (High to Low) 1.5 ms max. The time required for the output to become "Lo" after placing sensing object. Response delay time (Low to high) 1.5 ms max. The time required for the output to become "Hi" after removing sensing object. Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.9 maximum located at the correct sensing position of the Sensor as shown in the optical path arrangement on page 7. 2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as shown in the optical path arrangement on page 7. 6 EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm) Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.) (Ta =0C to 60C) Item Characteristic value Sensing density Lusterless paper with an OD of 0.9 max. (sensing distance: 50 mm) (see note) Non-sensing distance 85 mm (from the top of the sensor), OD: 0.05 Paper sensing distance 50 mm (from the top of the sensor) Ambient illumination Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max. Note: 1. The data shown are initial data. 2. Optical darkness (OD) is defined by the following formula: OD = - log10 PIN (mW): POUT PIN Light power incident upon the document POUT (mW): Reflected light power from the document Optical Path Arrangement 85 (see note 2) 10 dia. (see note 1) 50 (standard value) 8.9 Paper supporting plate Glass Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1051, which is practically determined by the diameter of the beam and its tolerance. 2. The non-sensing distance of the EY3A-1051 is determined using a paper with an OD of 0.05. Engineering Data Distance Characteristics (Typical) OD (value) 4.75 V 5.0 V 5.25 V Distance (mm) EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm) 7 Manuscript Paper Sensor (1 Beam: 80 mm) EY3A-1081 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ensures higher sensitivity and external light interference resistivity than any other photomicrosensor. * Narrow sensing range ensures stable sensing of a variety of sensing objects. Center of detector Positioning boss Absolute Maximum Ratings (Ta = 25C) 7.9 dia. 8.3 dia. Center of emitter 3.2 Item +0.2 0 dia. Pin no.1 Symbol Rated value Power supply voltage VCC 7V Load voltage VOUT 7V Load current IOUT 10 mA Operating Topr 0C to 60C Storage Tstg -15C to 70C Ambient temperature Note: Make sure there is no icing or condensation when operating the Sensor. 3 Pin no. Remarks 0 -0.2 dia. Name 1 O Output (OUT) 2 3 V G Power supply (Vcc) Ground (GND) Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 30 < mm 50 0.8 50 < mm 80 0.95 Recommended Mating Connectors: Japan Molex 51090-0300 (crimp connector) 52484-0310 (press-fit connector) Electrical and Optical Characteristics (Ta = 0C to 60C) Item Value Condition Power supply voltage 5 V 5% --- Current consumption 50 mA max. VCC = 5 V, RL = Peak current consumption 200 mA max. VCC = 5 V, RL = Low-level output voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1) High-level output voltage 3.5 V min. VCC = 5 V, RL = 4.7 k (see note 2) Response delay time (High to Low) 1.5 ms max. The time required for the output to become "Lo" after placing sensing object. Response delay time (Low to high) 1.5 ms max. The time required for the output to become "Hi" after removing sensing object. Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.7 maximum located at the correct sensing position of the Sensor as shown in the optical path arrangement on page 9. 2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as shown in the optical path arrangement on page 9. 8 EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.) (Ta =0C to 60C) Item Characteristic value Sensing density Lusterless paper with an OD of 0.7 max. (sensing distance: 80 mm) (see note) Non-sensing distance 120 mm (from the top of the sensor), OD: 0.05 Paper sensing distance 80 mm (from the top of the sensor) Ambient illumination Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max. Note: 1. The data shown are initial data. 2. Optical darkness (OD) is defined by the following formula: OD = - log10 POUT PIN PIN (mW):Light power incident upon the document POUT (mW):Reflected light power from the document Optical Path Arrangement 120 (see note 2) 80 (Standard value) 10 dia. (see note 1) Paper supporting plate Glass Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1081, which is practically determined by the diameter of the beam and its tolerance. 2. The non-sensing distance of the EY3A-1081 is determined using a paper with an OD of 0.05. Engineering Data OD (value) Distance Characteristics (Typical) 4.75 V 5.0 V 5.25 V Distance (mm) EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) 9 Manuscript Paper Sensor (1 Beam: 125 mm) EY3A-112 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ensures higher sensitivity and external light interference resistivity than any other photomicrosensor. * Narrow sensing range ensures stable sensing of a variety of sensing objects. Center of detector Positioning boss Absolute Maximum Ratings (Ta = 25C) Item Two, 10 dia. Center of emitter 53325-0310 (Japan Molex) 3.2 +0.2 0 dia. Pin no.1 Symbol Rated value Power supply voltage VCC 7V Load voltage VOUT 7V Load current IOUT 10 mA Operating Topr 0C to 65C Storage Tstg -15C to 70C Ambient temperature Note: Make sure there is no icing or condensation when operating the Sensor. 0 3 -0.2 dia. C1 Pin no. Remarks Name 1 O Output (OUT) 2 V Power supply (Vcc) 3 G Ground (GND) Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 30 < mm 50 0.8 50 < mm 80 0.95 Recommended Mating Connectors: Japan Molex 51090-0300 (crimp connector) 52484-0310 (press-fit connector) Electrical and Optical Characteristics (Ta = 0C to 65C) Item Power supply voltage Value 5 V 5% Condition --- Current consumption 50 mA max. VCC = 5 V, RL = Peak current consumption 200 mA max. VCC = 5 V, RL = Low-level output voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1) High-level output voltage 3.5 V min. VCC = 5 V, RL = 4.7 k (see note 2) Response delay time (High to Low) 35 ms max. The time required for the output to become "Lo" after placing sensing object. Response delay time (Low to high) 20 ms max. The time required for the output to become "Hi" after removing sensing object. Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.6 maximum located at the correct sensing position of the Sensor as shown in the optical path arrangement on page 11. 2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as shown in the optical path arrangement on page 11. 10 EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm) Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.) (Ta =0C to 65C) Item Characteristic value Sensing density Lusterless paper with an OD of 0.6 max. (sensing distance: 125 mm) (see note) Non-sensing distance 185 mm (from the top of the sensor), OD: 0.05 Paper sensing distance 125 mm (from the top of the sensor) Ambient illumination Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max. Note: 1. The data shown are initial data. 2. Optical darkness (OD) is defined by the following formula: OD = - log10 POUT PIN PIN (mW): Light power incident upon the document POUT (mW): Reflected light power from the document Optical Path Arrangement (beam center) 185 min. 13 dia. 4 dia. 125 (standard value) (beam diameter) 8.5 (beam center) Paper supporting plate Glass Engineering Data Distance Characteristics (Estimated Lower-limit Value) OD (value) 4.75 V 5.0 V 5.25 V Distance (mm) EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm) 11 12 EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm) Photomicrosensors Transmissive Sensors Technical Information . . . . . . . . . . . . . . Precautions . . . . . . . . . . . . . . . . . . . . . Application Examples . . . . . . . . . . . . . . EE-SX1018. . . . . . . . . . . . . . . . . . . . . . EE-SX1023-W1 . . . . . . . . . . . . . . . . . . EE-SX1031. . . . . . . . . . . . . . . . . . . . . . EE-SX1035. . . . . . . . . . . . . . . . . . . . . . EE-SX1041. . . . . . . . . . . . . . . . . . . . . . EE-SX1042. . . . . . . . . . . . . . . . . . . . . . EE-SX1046. . . . . . . . . . . . . . . . . . . . . . EE-SX1049. . . . . . . . . . . . . . . . . . . . . . EE-SX1055. . . . . . . . . . . . . . . . . . . . . . EE-SX1057. . . . . . . . . . . . . . . . . . . . . . EE-SX1061. . . . . . . . . . . . . . . . . . . . . . EE-SX1070. . . . . . . . . . . . . . . . . . . . . . EE-SX1071. . . . . . . . . . . . . . . . . . . . . . EE-SX1081. . . . . . . . . . . . . . . . . . . . . . EE-SX1082. . . . . . . . . . . . . . . . . . . . . . EE-SX1088. . . . . . . . . . . . . . . . . . . . . . EE-SX1096. . . . . . . . . . . . . . . . . . . . . . EE-SX1103. . . . . . . . . . . . . . . . . . . . . . EE-SX1105. . . . . . . . . . . . . . . . . . . . . . EE-SX1106. . . . . . . . . . . . . . . . . . . . . . EE-SX1107. . . . . . . . . . . . . . . . . . . . . . EE-SX1108. . . . . . . . . . . . . . . . . . . . . . EE-SX1109. . . . . . . . . . . . . . . . . . . . . . EE-SX1115. . . . . . . . . . . . . . . . . . . . . . EE-SX1128. . . . . . . . . . . . . . . . . . . . . . EE-SX1131. . . . . . . . . . . . . . . . . . . . . . EE-SX1137. . . . . . . . . . . . . . . . . . . . . . EE-SX1140. . . . . . . . . . . . . . . . . . . . . . EE-SX1235A-P2. . . . . . . . . . . . . . . . . . EE-SX129. . . . . . . . . . . . . . . . . . . . . . . EE-SX138. . . . . . . . . . . . . . . . . . . . . . . 14 27 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 76 80 84 86 88 92 94 96 98 100 EE-SX153 . . . . . . . . . . . . . . . . . . . . . . EE-SX198 . . . . . . . . . . . . . . . . . . . . . . EE-SX199 . . . . . . . . . . . . . . . . . . . . . . EE-SA102 . . . . . . . . . . . . . . . . . . . . . . EE-SA104 . . . . . . . . . . . . . . . . . . . . . . EE-SA105 . . . . . . . . . . . . . . . . . . . . . . EE-SA113 . . . . . . . . . . . . . . . . . . . . . . EE-SG3/EE-SG3-B . . . . . . . . . . . . . . . EE-SH3 Series. . . . . . . . . . . . . . . . . . . EE-SJ3 Series . . . . . . . . . . . . . . . . . . . EE-SJ5-B . . . . . . . . . . . . . . . . . . . . . . . EE-SJ8-B . . . . . . . . . . . . . . . . . . . . . . . EE-SV3 Series . . . . . . . . . . . . . . . . . . . EE-SX298 . . . . . . . . . . . . . . . . . . . . . . EE-SX301/-SX401 . . . . . . . . . . . . . . . . EE-SX305/-SX405 . . . . . . . . . . . . . . . . EE-SX3070/-SX4070 . . . . . . . . . . . . . . EE-SX3081/-SX4081 . . . . . . . . . . . . . . EE-SX3088/-SX4088 . . . . . . . . . . . . . . EE-SX3133 . . . . . . . . . . . . . . . . . . . . . EE-SX338 . . . . . . . . . . . . . . . . . . . . . . EE-SX384/-SX484 . . . . . . . . . . . . . . . . EE-SX493 . . . . . . . . . . . . . . . . . . . . . . EE-SX398/498 . . . . . . . . . . . . . . . . . . . EE-SX3009-P1/-SX4009-P1 . . . . . . . . EE-SX4019-P2. . . . . . . . . . . . . . . . . . . EE-SX4134 . . . . . . . . . . . . . . . . . . . . . EE-SX4235A-P2 . . . . . . . . . . . . . . . . . EE-SX3239-P2. . . . . . . . . . . . . . . . . . . EE-SX460-P1. . . . . . . . . . . . . . . . . . . . EE-SX461-P11. . . . . . . . . . . . . . . . . . . EE-SA407-P2. . . . . . . . . . . . . . . . . . . . EE-SPX415-P2 . . . . . . . . . . . . . . . . . . 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 146 148 150 152 154 158 160 162 164 166 168 Reflective Sensors EE-SY110. . . . . . . . . . . . . . . . . . . . . . . EE-SY113. . . . . . . . . . . . . . . . . . . . . . . EE-SY124. . . . . . . . . . . . . . . . . . . . . . . EE-SY125. . . . . . . . . . . . . . . . . . . . . . . EE-SY169. . . . . . . . . . . . . . . . . . . . . . . EE-SY169A . . . . . . . . . . . . . . . . . . . . . EE-SY169B . . . . . . . . . . . . . . . . . . . . . EE-SY171. . . . . . . . . . . . . . . . . . . . . . . EE-SY193. . . . . . . . . . . . . . . . . . . . . . . EE-SB5(-B). . . . . . . . . . . . . . . . . . . . . . EE-SF5(-B). . . . . . . . . . . . . . . . . . . . . . EE-SY310/-SY410 . . . . . . . . . . . . . . . . EE-SY313/-SY413 . . . . . . . . . . . . . . . . 170 172 174 176 180 182 184 186 188 192 194 196 198 13 Technical Information Features of Photomicrosensors The Photomicrosensor is a compact optical sensor that senses objects or object positions with an optical beam. The transmissive Photomicrosensor and reflective Photomicrosensor are typical Photomicrosensors. The transmissive Photomicrosensor incorporates an emitter and a transmissive that face each other as shown in Figure 1. When an object is located in the sensing position between the emitter and the detector, the object intercepts the optical beam of the emitter, thus reducing the amount of optical energy reaching the detector. The reflective Photomicrosensor incorporates an emitter and a detector as shown in Figure 2. When an object is located in the sensing area of the reflective Photomicrosensor, the object reflects the optical beam of the emitter, thus changing the amount of optical energy reaching the detector. "Photomicrosensor" is an OMRON product name. Generally, the Photomicrosensor is called a photointerrupter. Figure 1. Transmissive Photomicrosensor LED Phototransistor Datasheet Absolute Maximum Ratings and Electrical and Optical Characteristics The datasheets of Photomicrosensors include the absolute maximum ratings and electrical and optical characteristics of the Photomicrosensors as well as the datasheets of transistors and ICs. It is necessary to understand the difference between the absolute maximum ratings and electrical and optical characteristics of various Photomicrosensors. Absolute Maximum Ratings The absolute maximum ratings of Photomicrosensors and other products with semiconductors specify the permissible operating voltage, current, temperature, and power limits of these products. The products must be operated absolutely within these limits. Therefore, when using any Photomicrosensor, do not ignore the absolute maximum ratings of the Photomicrosensor, or the Photomicrosensor will not operate precisely. Furthermore, the Photomicrosensor may be deteriorate or become damaged, in which case OMRON will not be responsible. Practically, Photomicrosensors should be used so that there will be some margin between their absolute maximum ratings and actual operating conditions. 14 Technical Information Figure 2. Reflective Photomicrosensor LED Phototransistor Electrical and Optical Characteristics The electrical and optical characteristics of Photomicrosensors indicate the performance of Photomicrosensors under certain conditions. Most items of the electrical and optical characteristics are indicated by maximum or minimum values. OMRON usually sells Photomicrosensors with standard electrical and optical characteristics. The electrical and optical characteristics of Photomicrosensors sold to customers may be changed upon request. All electrical and optical characteristic items of Photomicrosensors indicated by maximum or minimum values are checked and those of the Photomicrosensors indicated by typical values are regularly checked before shipping so that OMRON can guarantee the performance of the Photomicrosensors. In short, the absolute maximum ratings indicate the permissible operating limits of the Photomicrosensors and the electrical and optical characteristics indicate the maximum performance of the Photomicrosensors. Terminology The terms used in the datasheet of each Photomicrosensor with a phototransistor output circuit or a photo IC output circuit are explained below. Phototransistor Output Photomicrosensor Symbol Item Definition IFP Pulse forward current The maximum pulse current that is allowed to flow continuously from the anode to cathode of an LED under a specified temperature, a repetition period, and a pulse width condition. IC Collector current The current that flows to the collector junction of a phototransistor. PC Collector dissipation The maximum power that is consumed by the collector junction of a phototransistor. ID Dark current The current leakage of the phototransistor when a specified bias voltage is imposed on the phototransistor so that the polarity of the collector is positive and that of the emitter is negative on condition that the illumination of the Photomicrosensor is 0 lx. IL Light current The collector current of a phototransistor under a specified input current condition and at a specified bias voltage. VCE (sat) Collector-emitter saturated The ON-state voltage between the collector and emitter of a phototransistor under a specified bias curvoltage rent condition. ILEAK Leakage current The collector current of a phototransistor under a specified input current condition and at a specified bias voltage when the phototransistor is not exposed to light. tr Rising time The time required for the leading edge of an output waveform of a phototransistor to rise from 10% to 90% of its final value when a specified input current and bias condition is given to the phototransistor. tf Falling time The time required for the trailing edge of an output waveform of a phototransistor to decrease from 90% to 10% of its final value when a specified input current and bias condition is given to the phototransistor. VCEO Collector-emitter voltage The maximum positive voltage that can be applied to the collector of a phototransistor with the emitter at reference potential. VECO Emitter-collector voltage The maximum positive voltage that can be applied to the emitter of a phototransistor with the collector at reference potential. Phototransistor/Photo IC Output Photomicrosensor Symbol Item Definition IF Forward current The maximum DC voltage that is allowed to flow continuously from the anode of the LED to the cathode of the LED under a specified temperature condition. VR Reverse voltage The maximum negative voltage that can be applied to the anode of the LED with the cathode at reference potential. VCC Supply voltage The maximum positive voltage that can be applied to the voltage terminals of the photo IC with the ground terminal at reference potential. VOUT Output voltage The maximum positive voltage that can be applied to the output terminal with the ground terminal of the photo IC at reference potential. IOUT Output current The maximum current that is allowed to flow in the collector junction of the output transistor of the photo IC. POUT Output permissible dissipation The maximum power that is consumed by the collector junction of the output transistor of the photo IC. VF Forward voltage The voltage drop across the LED in the forward direction when a specified bias current is applied to the photo IC. IR Reverse current The reverse leakage current across the LED when a specified negative bias is applied to the anode with the cathode at reference potential. VOL Output low voltage The voltage drop in the output of the photo IC when the IC output is turned ON under a specified voltage and output current applied to the photo IC. VOH Output high voltage The voltage output by the photo IC when the IC output is turned OFF under a specified supply voltage and bias condition given to the photo IC. ICC Current consumption The current that will flow into the sensor when a specified positive bias voltage is applied from the power source with the ground of the photo IC at reference potential. IFT (IFT OFF) LED current when output is The forward LED current value that turns OFF the output of the photo IC when the forward current to turned OFF the LED is increased under a specified voltage applied to the photo IC. IFT (IFT ON) LED current when output is The forward LED current value that turns ON the output of the photo IC when the forward current to the turned ON LED is increased under a specified voltage applied to the photo IC. H Hysteresis The difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned ON and when the photo IC is turned OFF. f Response frequency The number of revolutions of a disk with a specified shape rotating in the light path, expressed by the number of pulse strings during which the output logic of the photo IC can be obtained under a specified bias condition given to the LED and photo IC (the number of pulse strings to which the photo IC can respond in a second). Technical Information 15 Design Driving Current Level The following explains how systems using Photomicrosensors must be designed. It is especially important to decide the level of the forward current (IF) of the emitter incorporated by any Photomicrosensor. The forward current must not be too large or too small. Before using any Photomicrosensor, refer to the absolute maximum ratings in the datasheet of the Photomicrosensor to find the emitter's forward current upper limit. For example, the first item in the absolute maximum ratings in the datasheet of the EE-SX1018 shows that the forward current (IF) of its emitter is 50 mA at a Ta (ambient temperature) of 25C. This means the forward current (IF) of the emitter is 50 mA maximum at a Ta of 25C. As shown in Figure 4, the forward current must be reduced according to changes in the ambient temperature. Figure 4 indicates that the forward current (IF) is approximately 27 mA maximum if the EE-SX1018 is used at a Ta of 60C. This means that a current exceeding 27 mA must not flow into the emitter incorporated by the EE-SX1018 at a Ta of 60C. As for the lower limit, a small amount of forward current will be required because the LED will not give any output if the forward current IF is zero. Characteristics of Emitter The emitter of each Photomicrosensor has an infrared LED or red LED. Figure 3 shows how the LED forward current characteristics of the EE-SX1018, which has an emitter with an infrared LED, and those of the EE-SY169B, which has an emitter with a red LED, are changed by the voltages imposed on the EE-SX1018 and EESY169B. As shown in this figure, the LED forward current characteristics of the EE-SX1018 greatly differ from those of the EESY169B. The LED forward current characteristics of any Photomicrosensor indicate how the voltage drop of the LED incorporated by the emitter of the Photomicrosensor is changed by the LED's forward current (IF) flowing from the anode to cathode. Figure 3 shows that the forward voltage (VF) of the red LED is higher than that of the infrared LED. The forward voltage (VF) of the infrared LED is approximately 1.2 V and that of the red LED is approximately 2 V provided that the practical current required by the infrared LED and that required by the red LED flow into these LEDs respectively. Figure 4. Temperature Characteristics (EE-SX1018) PC IF Forward current IF (mA) Forward current IF (mA) Figure 3. LED Forward Current vs. Forward Voltage Characteristics (Typical) EE-SX1018 (infrared LED) EE-SY169B (red LED) 2.4 Forward voltage VF (V) Forward Voltage VF 16 Technical Information Collector dissipation PC (mW) Emitter Ambient temperature Ta (C) In short, the forward current lower limit of the emitter of any Photomicrosensor must be 5 mA minimum if the emitter has an infrared LED and 2 mA minimum if the emitter has a red LED. If the forward current of the emitter is too low, the optical output of the emitter will not be stable. To find the ideal forward current value of the Photomicrosensor, refer to the light current (IL) shown in the datasheet of the Photomicrosensor. The light current (IL) indicates the relationship between the forward current (IF) of the LED incorporated by the Photomicrosensor and the output of the LED. The light current (IL) is one of the most important characteristics. If the forward current specified by the light current (IL) flows into the emitter, even though there is no theoretical ground, the output of the emitter will be stable. This characteristic makes it possible to design the output circuits of the Photomicrosensor easily. For example, the datasheet of EE-SX1018 indicates that a forward current (IF) of 20 mA is required. Design Method The following explains how the constants of a Photomicrosensor must be determined. Figure 5 shows a basic circuit that drives the LED incorporated by a Photomicrosensor. The basic circuit absolutely requires a limiting resistor (R). If the LED is imposed with a forward bias voltage without the limiting resistor, the current of the LED is theoretically limitless because the forward impedance of the LED is low. As a result the LED will burn out. Users often ask OMRON about the appropriate forward voltage to be imposed on the LED incorporated by each Photomicrosensor model that they use. There is no upper limit of the forward voltage imposed on the LED provided that an appropriate limiting resistor is connected to the LED. There is, however, the lower limit of the forward voltage imposed on the LED. As shown in Figure 3, the lower limit of the forward voltage imposed on the LED must be at least 1.2 to 2 V, or no forward current will flow into the LED. The supply voltage of a standard electronic circuit is 5 V minimum. Therefore, a minimum of 5 V should be imposed on the LED. A system incorporating any Photomicrosensor must be designed by considering the following. 1. Forward current (IF) 2. Limiting resistor (R) (refer to Figure 5) As explained above, determine the optimum level of the forward current (IF) of the LED. The forward current (IF) of the EE-SX1018, for example, is 20 mA. Therefore, the resistance of the limiting resistor connected to the LED must be decided so that the forward current of the LED will be approximately 20 mA. The resistance of the limiting resistor is obtained from the following. The positions of the limiting resistor (R) and the LED in Figure 5 are interchangeable. If the LED is imposed with reverse voltages including noise and surge voltages, add a rectifier diode to the circuit as shown in Figure 6. LEDs can be driven by pulse voltages, the method of which is, however, rarely applied to Photomicrosensors. In short, the following are important points required to operate any Photomicrosensor. A forward voltage (VF) of approximately 1.2 V is required if the Photomicrosensor has an infrared LED and a forward voltage (VF) of approximately 2 V is required if the Photomicrosensor has a red LED. The most ideal level of the forward current (IF) must flow into the LED incorporated by the Photomicrosensor. Decide the resistance of the limiting resistor connected to the LED after deciding the value of the forward current (IF). If the LED is imposed with a reverse voltage, connect a rectifier diode to the LED in parallel with and in the direction opposite to the direction of the LED. Figure 6. Reverse Voltage Protection Circuit VCC - VF IF In this case 5 V must be substituted for the supply voltage (VCC). The forward voltage (VF) obtained from Figure 3 is approximately 1.2 V when the forward current (IF) of the LED is 20 mA. Therefore, the following resistance is obtained. R= VCC - VF IF 5 to 1.2 V = 190 20 mA = approx. 180 to 220 The forward current (IF) varies with changes in the supply voltage (VCC), forward voltage (VF), or resistance. Therefore, make sure that there is some margin between the absolute maximum ratings and the actual operating conditions of the Photomicrosensor. R= = Figure 5. Basic Circuit VCC IF R VF GND (ground) Technical Information 17 Phototransistor Output Characteristics of Detector Element The changes in the current flow of the detector element with and without an optical input are important characteristics of a detector element. Figure 7 shows a circuit used to check how the current flow of the phototransistor incorporated by a Photomicrosensor is changed by the LED with or without an appropriate forward current (IF) flow, provided that the ambient illumination of the Photomicrosensor is ideal (i.e., 0 lx). When there is no forward current (IF) flowing into the LED or the optical beam emitted from the LED is intercepted by an opaque object, the ammeter indicates several nanoamperes due to a current leaking from the phototransistor. This current is called the dark current (ID). When the forward current (IF) flows into the LED with no object intercepting the optical beam emitted from the LED, the ammeter indicates several milliamperes. This current is called the light current (IL). The difference between the dark current and light current is 106 times larger as shown below. * When optical beam to the phototransistor is interrupted Dark current ID: 10-9 A The dark current temperature and light current temperature dependencies of the phototransistor incorporated by any Photomicrosensor must not be ignored. The dark current temperature dependency of the phototransistor increases when the ambient temperature of the Photomicrosensor in operation is high or the Photomicrosensor has a photoelectric Darlington transistor as the detector element of the Photomicrosensor. Figure 8 shows the dark current temperature dependency of the phototransistor incorporated by the EE-SX1018. Figure 8. Dark Current vs. Ambient Temperature Characteristics (Typical) (EE-SX1018) VCE = 10 V 0 lx Dark current ID Design of Systems Incorporating Photomicrosensors (1) * When optical beam to the phototransistor is not interrupted Light current IL: 10-3 A The standard light current of a phototransistor is 106 times as large as the dark current of the phototransistor. This difference in current can be applied to the sensing of a variety of objects. Figure 7. Measuring Circuit Ammeter The ambient illumination of the LED and phototransistor incorporated by the Photomicrosensor in actual operation is not 0 lx. Therefore, a current larger than the dark current of the phototransistor will flow into the phototransistor when the optical beam emitted from the LED is interrupted. This current is rather large and must not be ignored if the Photomicrosensor has a photoelectric Darlington transistor, which is highly sensitive, as the detector element of the Photomicrosensor. The dark current of the phototransistor incorporated by any reflective Photomicrosensor flows if there is no reflective object in the sensing area of the reflective Photomicrosensor. Furthermore, due to the structure of the reflective Photomicrosensor, a small portion of the optical beam emitted from the LED reaches the phototransistor after it is reflected inside the reflective Photomicrosensor. Therefore, the dark current and an additional current will flow into the phototransistor if there is no sensing object in the sensing area. This additional current is called leakage current (ILEAK). The leakage current of the phototransistor is several hundred nanoamperes and the dark current of the phototransistor is several nanoamperes. 18 Technical Information Ambient temperature Ta (C) Due to the temperature dependency of the phototransistor, the light current (IL) of the phototransistor as the detector element of the Photomicrosensor increases according to a rise in the ambient temperature. As shown in Figure 9, however, the output of the LED decreases according to a rise in the ambient temperature due to the temperature dependency of the LED. An increase in the light current of the phototransistor is set off against a decrease in the output of the LED and consequently the change of the output of the Photomicrosensor according to the ambient temperature is comparatively small. Refer to Figure 10 for the light current temperature dependency of the phototransistor incorporated by the EE-SX1018. The light current temperature dependency shown in Figure 10 is, however, a typical example. The tendency of the light current temperature dependency of each phototransistor is indefinite. This means the temperature compensation of any Photomicrosensor is difficult. Figure 9. LED and Phototransistor Temperature Characteristics (Typical) A relative value of 100 is based on a Ta of 25C. Relative value (%) LED optical output Phototransistor light current Ambient temperature Ta (C) Figure 10. Relative Light Current vs. Ambient Temperature Characteristics (EE-SX1018) Relative light current (%) Measurement condition IF = 20 mA VCE = 5 V Ambient temperature Ta (C) Changes in Characteristics The following explains the important points required for the designing of systems incorporating Photomicrosensors by considering worst case design technique. Worst case design technique is a method to design systems so that the Photomicrosensors will operate normally even if the characteristics of the Photomicrosensors are at their worst. A system incorporating any Photomicrosensor must be designed so that they will operate even if the light current (IL) of the phototransistor is minimal and the dark current (ID) and leakage current of the phototransistor are maximal. This means that the system must be designed so that it will operate even if the difference in the current flow of the phototransistor between the time that the Photomicrosensor senses an object and the time that the Photomicrosensor does not sense the object is minimal. The worst light current (IL) and dark current (ID) values of the phototransistor incorporated by any Photomicrosensor is specified in the datasheet of the Photomicrosensor. (These values are specified in the specifications either as the minimum value or maximum value.) Table 1 shows the dark current (ID) upper limit and light current (IL) lower limit values of the phototransistors incorporated by a variety of Photomicrosensors. Systems must be designed by considering the dark current (ID) upper limit and light current (IL) lower limit values of the phototransistors. Not only these values but also the following factors must be taken into calculation to determine the upper limit of the dark current (ID) of each of the phototransistors. External light interference Temperature rise Power supply voltage Leakage current caused by internal light reflection if the systems use reflective Photomicrosensors. The above factors increase the dark current (ID) of each phototransistor. As for the light current (IL) lower limit of each phototransistor, the following factors must be taken into calculation. * Temperature change * Secular change The above factors decrease the light current (IL) of each phototransistor. Table 2 shows the increments of the dark current (ID) and the decrements of the light current (ID) of the phototransistors. Therefore, if the EE-SX1018 is operated at a Ta of 60C maximum and a VCC of 10 V for approximately 50,000 hours, for example, the dark current (ID) of the phototransistor incorporated by the EESX1018 will be approximately 4 A and the light current (IL) of the phototransistor will be approximately 0.5 mA because the dark current (ID) of the phototransistor at a Ta of 25C is 200 nanoamperes maximum and the light current (IL) of the phototransistor at a Ta of 25C is 0.5 mA minimum. Table 3 shows the estimated worst values of a variety of Photomicrosensors, which must be considered when designing systems using these Photomicrosensors. The dispersion of the characteristics of the Photomicrosensors must be also considered, which is explained in detail later. The light current (IL) of the phototransistor incorporated by each reflective Photomicrosensor shown in its datasheet was measured under the standard conditions specified by OMRON for its reflective Photomicrosensors. The light current (IL) of any reflective Photomicrosensor greatly varies with its sensing object and sensing distance. * * * * Technical Information 19 Table 1. Rated Dark Current (ID) and Light Current (IL) Values Model Upper limit (ID) Lower limit (IL) Condition EE-SG3(-B) 200 nA 2 mA IF = 15 mA EE-SX1018, -SX1055 EE-SX1041, -SX1042 EE-SX1070, -SX1071 EE-SX198, -SX199 200 nA 0.5 mA IF = 20 mA EE-SB5(-B) EE-SF5(-B) EE-SY110 200 nA 0.2 mA IF = 20 mA (see note) Condition VCE = 10 V, 0 lx Ta = 25C VCE = 10 V Ta = 25C --- Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors. Table 2. Dependency of Detector Elements on Various Factors Elements Dark current ID Light current IL Phototransistor To be checked using experiment Temperature rise Increased by approximately 10 times with Increased by approximately 28 times with a temperature rise of 25C. a temperature rise of 25C. Supply voltage See Figure 11. See Figure 12. Temperature change Approximately -20% to 10% Approximately -20% to 10% Secular change (20,000 to 50,000 hours) Note: For an infrared LED. Decreased to approximately one-half of Decreased to approximately one-half of the initial value considering the tempera- the initial value considering the temperature changes of the element. ture changes of the element. Relative dark current ID (%) Figure 11. Dark Current Imposed Voltage Dependency (Typical) (EE-SX1018) A relative dark current value of 100 is based on a Ta of 25C and a VCE of 10 V. Collector-emitter voltage VCE (V) 20 Photo-Darlington transistor External light interference Technical Information To be checked using experiment Table 3. Estimated Worst Values of a Variety of Photomicrosensors Model Estimated worst value (ID) Estimated worst value (IL) Condition EE-SG3(-B) 4 nA 1 mA IF = 15 mA EE-SX1018, -SX1055 EE-SX1041, -SX1042 EE-SX1070, -SX1071 EE-SX198, -SX199 4 nA 0.25 mA IF = 20 mA EE-SB5(-B) EE-SF5(-B) EE-SY110 4 nA 0.1 mA IF = 20 mA (see note) Condition VCE = 10 V, 0 lx Ta = 60C VCE = 10 V, Operating hours = 50,000 to 100,000 hrs Ta = Topr --- Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors with an Infrared LED. Design of Basic Circuitry The following explains the basic circuit incorporated by a typical Photomicrosensor and the important points required for the basic circuit. The flowing currents (i.e., IL and ID) of the phototransistor incorporated by the Photomicrosensor must be processed to obtain the output of the Photomicrosensor. Refer to Figure 13 for the basic circuit. The light current (IL) of the phototransistor will flow into the resistor (RL) if the phototransistor receives an optical input and the dark current (ID) and leakage current of the phototransistor will flow into the resistor (RL) if the phototransistor does not receive any optical input. Therefore, if the phototransistor receives an optical input, the output voltage imposed on the resistor (RL) will be obtained from the following. IL x RL If the phototransistor does not receive any optical input, the output voltage imposed on the resistor (RL) will be obtained from the following. (ID + leakage current) x RL The output voltage of the phototransistor is obtained by simply connecting the resistor (RL) to the phototransistor. For example, to obtain an output of 4 V minimum from the phototransistor when it is ON and an output of 1 V maximum when the phototransistor is OFF on condition that the light current (IL) of the phototransistor is 1 mA and the leakage current of the phototransistor is 0.1 mA, and these are the worst light current and leakage current values of the phototransistor, the resistance of the resistor (RL) must be approximately 4.7 k. Then, an output of 4.7 V (i.e., 1 mA x 4.7 k) will be obtained when the phototransistor is ON and an output of 0.47 V (i.e., 0.1 mA x 4.7 k) will be obtained when the phototransistor is OFF. Practically, the output voltage of the phototransistor will be more than 4.7 V when the phototransistor is ON and less than 0.47 V when the phototransistor is OFF because the above voltage values are based on the worst light current and leakage current values of the phototransistor. The outputs obtained from the phototransistor are amplified and input to ICs to make practical use of the Photomicrosensor. Figure 13. Basic Circuit or Output Figure 14. Output Example VCC = 10 V Output voltage RL = 4.7 k EE-SX1018 Technical Information 21 Design of Applied Circuit The following explains the designing of the applied circuit shown in Figure 15. The light current (IL) of the phototransistor flows into R1 and R2 when the phototransistor receives the optical beam emitted from the LED. Part of the light current (IL) will flow into the base and emitter of Q 1 when the voltage imposed on R2 exceeds the bias voltage (i.e., approximately 0.6 to 0.9 V) imposed between the base and emitter of the transistor (Q1). The light current flowing into the base turns Q1 ON. A current will flow into the collector of Q1 through R3 when Q1 is ON. Then, the electric potential of the collector will drop to a low logic level. The dark current and leakage current of the phototransistor flow when the optical beam emitted from the LED is intercepted. The electric potential of the output of the phototransistor (i.e., (ID + leakage current) x R2) is, however, lower than the bias voltage between the base and emitter of Q1. Therefore, no current will flow into the base of Q1 and Q1 will be OFF. The output of Q 1 will be at a high level. As shown in Figure 16, when the phototransistor is ON, the phototransistor will be seemingly short-circuited through the base and emitter of the Q1, which is equivalent to a diode, and if the light current (IL) of the phototransistor is large and R1 is not connected to the phototransistor, the light current (IL) will flow into Q1 and the collector dissipation of the phototransistor will be excessively large. The following items are important when designing the above applied circuit: * The voltage output (i.e., IL x R2) of the phototransistor receiving the optical beam emitted from the LED must be much higher than the bias voltage between the base and emitter of Q1. * The voltage output (i.e., (ID + leakage current) x R2) of the phototransistor not receiving the optical beam emitted from the LED must be much lower than the bias voltage between the base and emitter of Q1. Therefore, it is important to determine the resistance of R2. Figure 17 shows a practical applied circuit example using the EE-SX1018 Photomicrosensor at a supply voltage (VCC) of 5V to drive a 74series TTL IC. This applied circuit example uses R1 and R2 with appropriate resistance values. Figure 15. Applied Circuit Figure 17. Applied Circuit Example EE-SX1018 VCC = 5 V R3 4.7 kW R1 200 IC1 74-series TTL IC R2 10 k Calculation of R2 The resistance of R2 should be decided using the following so that the appropriate bias voltage (VBE(ON)) between the base and emitter of the transistor (Q1) to turn Q1 ON will be obtained. IC1 x R2 > VBE(ON) IC1 = IL - IB (IL - IB) x R2 > VBE(ON) VBE(ON) IL - I B The bias voltage (VBE(ON)) between the base and emitter of Q1 is approximately 0.8 V and the base current (IB) of Q1 is approximately 20 A if Q1 is a standard transistor controlling small signals. The estimated worst value of the light current (IL) of the phototransistor is 0.25 mA according to Table 3. Therefore, the following is obtained. R2 > 0.8 V = approx. 3.48 k 0.25 mA - 20 A R2 must be larger than the above result. Therefore, the actual resistance of R2 must be two to three times as large as the above result. In the above applied circuit example, the resistance of R2 is 10 k. R2 > Verification of R2 Value The resistance of R2 obtained from the above turns Q1 ON. The following explains the way to confirm whether the resistance of R2 obtained from the above can turns Q1 OFF as well. The condition required to turn Q1 OFF is obtained from the following. (ID + ) x R2 < VBE(OFF) Output EE-SX1018 Figure 16. Equivalent Circuit 22 Technical Information Substitute 10 k for R2, 4 A for the dark current (ID) according to Table 3, and 10 A for the leakage current on the assumption that the leakage current is 10 A in formula 3. The following is obtained. (ID + a) x R2 > VBE(ON) (4 A + 10 A) x 10 k = 0.140 V VBE(OFF) = 0.4 V 0.140 V < 0.4 V The above result verifies that the resistance of R2 satisfies the condition required to turn Q1 OFF. If the appropriateness of the resistance of R2 has been verified, the design of the circuit is almost complete. R1 As shown in Figure 16, when the phototransistor is ON, the phototransistor will be seemingly short-circuited through the base and emitter of the Q1, and if the light current (IL) of the phototransistor is large and R1 is not connected to the phototransistor, the light current will flow into Q1 and the collector dissipation of the phototransistor will be excessively large. The resistance of R1 depends on the maximum permissible collector dissipation (PC) of the phototransistor, which can be obtained from the datasheet of the Photomicrosensor. The resistance of R1 of a phototransistor is several hundred ohms. In the above applied circuit example, the resistance of R1 is 200 . If the resistance of R1 is determined, the design of the circuit is complete. It is important to connect a transistor to the phototransistor incorporated by the Photomicrosensor to amplify the output of the phototransistor, which increases the reliability and stability of the Photomicrosensor. Such reliability and stability of the Photomicrosensor cannot be achieved if the output of the phototransistor is not amplified. The response speed and other performance characteristics of the circuit shown in Figure 15 are far superior to those of the circuit shown in Figure 13 because the apparent impedance (i.e., load resistance) of the Photomicrosensor is determined by R1, the resistance of which is comparatively small. Recently, Photomicrosensors that have photo IC amplifier circuits are increasing in number because they are easy to use and make it possible to design systems using Photomicrosensors without problem. Design of Systems Incorporating Photomicrosensors (2) Photo IC Output Figure 18 shows the circuit configuration of the EE-SX301 or EESX401 Photomicrosensor incorporating a photo IC output circuit. The following explains the structure of a typical Photomicrosensor with a photo IC output circuit. Figure 18. Circuit Configuration Voltage stabilizer A Temperature compensation preamplifier Schmitt switching circuit + Output OUT transistor K Input (GaAs infrared LED) Output (Si photo IC) - LED Forward Current (IF) Supply Circuit The LED in the above circuitry is an independent component, to which an appropriate current must be supplied from an external power supply. This is the most important item required by the Photomicrosensor. It is necessary to determine the appropriate forward current (IF) of the LED that turns the photo IC ON. If the appropriate forward current is determined, the Photomicrosensor can be easily used by simply supplying power to the detector circuitry (i.e., the photo IC). Refer to the datasheet of the Photomicrosensor to find the current of the LED turning the photo IC ON. Table 4 is an extract of the datasheet of the EE-SX301/EE-SX401. Table 4. Abstract of Characteristics Item Symbol EE-SX301, -SX401 Value LED current when output IFTOFF is turned OFF (EE-SX301) Condition 8 mA max. VCC = 4.5 to 16 V Ta = 25C LED current when output IFTON is turned ON (EE-SX401) To design systems incorporating EE-SX301 or EE-SX401 Photomicrosensors, the following are important points. * A forward current equivalent to or exceeding the IFTOFF value must flow into the LED incorporated by each EE-SX301 Photomicrosensors. * A forward current equivalent to or exceeding the IFTON value must flow into the LED incorporated by the EE-SX401 Photomicrosensors. The IFTON value of the EE-SX301 is 8 mA maximum and so is the IFON value of the EE-SX401. The forward current (IF) of LED incorporated by the EE-SX301 in actual operation must be 8 mA or more and so must the actual forward current of (IF) the LED incorporated by the EE-SX401 in actual operation. The actual forward currents of the LEDs incorporated by the EE-SX301 and EE-SX401 are limited by their absolute maximum forward currents respectively. The upper limit of the actual forward current of the LED incorporated by the EESX301 and that of the LED incorporated by the EE-SX401 must be decided according Figure 19, which shows the temperature characteristics of the EE-SX301 and EE-SX401. The forward current (IF) of the EE-SX301 must be as large as possible within the absolute maximum forward current and maximum ambient temperature shown in Figure 19 and so must be the forward current (IF) of the EE-SX401. The forward current (IF) of the EE-SX301 or that of the EE-SX401 must not be close to 8 mA, otherwise the photo IC of the EE-SX301 or that of the EE-SX401 may not operate if there is any ambient temperature change, secular change that reduces the optical output of the LED, or dust sticking to the LED. The forward current (IF) values of the EE-SX301 and the EE-SX401 in actual operation must be twice as large as the IFOFF values of the EE-SX301 and EE-SX401 respectively. Figure 20 shows the basic circuit of a typical Photomicrosensor with a photo IC output circuit. If the Photomicrosensor with a photo IC output circuit is used to drive a relay, be sure to connect a reverse voltage absorption diode (D) to the relay in parallel as shown in Figure 21. Technical Information 23 Detector Circuit Precautions Supply a voltage within the absolute maximum supply voltage to the positive and negative terminals of the photo IC circuit shown in Figure 18 and obtain a current within the IOUT value of the output transistor incorporated by the photo IC circuit. The following provides the instructions required for the operation of Photomicrosensors. Collector dissipation Pc (mW) Forward current IF (mA) Figure 19. Forward Current vs. Ambient Tempera ture Characteristics (EE-SX301/-SX401) IF * PC Ambient temperature Ta (C) Figure 20. Basic Circuit VCC Load OUT Transmissive Photomicrosensor Incorporating Phototransistor Output Circuit When using a transmissive Photomicrosensor to sense the following objects, make sure that the transmissive Photomicrosensor operates properly. * Highly permeable objects such as paper, film, and plastic * Objects smaller than the size of the optical beam emitted by the LED or the size of the aperture of the detector. The above objects do not fully intercept the optical beam emitted by the LED. Therefore, some part of the optical beam, which is considered noise, reaches the detector and a current flows from the phototransistor incorporated by the detector. Before sensing such type of objects, it is necessary to measure the light currents of the phototransistor with and without an object to make sure that the transmissive Photomicrosensor can sense objects without being interfered by noise. If the light current of the phototransistor sensing any one of the objects is IL(N) and that of the phototransistor sensing none of the objects is IL(S), the signal-noise ratio of the phototransistor due to the object is obtained from the following. S/N = IL(S)/IL(N) The light current (IL) of the phototransistor varies with the ambient temperature and secular changes. Therefore, if the signal-noise ratio of the phototransistor is 4 maximum, it is necessary to pay utmost attention to the circuit connected to the transmissive Photomicrosensor so that the transmissive Photomicrosensor can sense the object without problem. The light currents of phototransistors are different to one another. Therefore, when multiple transmissive Photomicrosensors are required, a variable resistor must be connected to each transmissive Photomicrosensor as shown in Figure 22 if the light currents of the phototransistors greatly differ from one another. Figure 22. Sensitivity Adjustment VCC GND Figure 21. Connected to Inductive Load Output VCC Relay GND GND The optical beam of the emitter and the aperture of the detector must be as narrow as possible. An aperture each can be attached to the emitter and detector to make the optical beam of the emitter and the aperture of the detector narrower. If apertures are attached to both the emitter and detector, however, the light current (IL) of the phototransistor incorporated by the detector will decrease. It is desirable to attach apertures to both the emitter and detector. If an aperture is attached to the detector only, the transmissive Photomicrosensor will have trouble sensing the above objects when they pass near the emitter. Figure 23. Aperture Example Aperture 24 Technical Information When using the transmissive Photomicrosensor to sense any object that vibrates, moves slowly, or has highly reflective edges, make sure to connect a proper circuit which processes the output of the transmissive Photomicrosensor so that the transmissive Photomicrosensor can operate properly, otherwise the transmissive Photomicrosensor may have a chattering output signal as shown in Figure 24. If this signal is input to a counter, the counter will have a counting error or operate improperly. To protect against this, connect a 0.01- to 0.02-F capacitor to the circuit as shown in Figure 25 or connect a Schmitt trigger circuit to the circuit as shown in Figure 26. Figure 27. Configuration of Reflective Photomicrosensor Object Emitter element Detector element Housing Figure 24. Chattering Output Signal VCC Output Chattering output Figure 28. Light Interception Characteristics of Filters GND Figure 25. Chattering Prevention (1) Permeability (%) VCC Output GND EE-SF5 EE-SB5 Figure 26. Chattering Prevention (2) VCC Output Schmitt trigger circuit (IC) Wavelength l (nm) GND Reflective Photomicrosensor Incorporating Phototransistor Output Circuit When using a reflective Photomicrosensor to sense objects, pay attention to the following so that the reflective Photomicrosensor operates properly. * External light interference * Background condition of sensing objects * Output level of the LED The reflective Photomicrosensor incorporates a detector element in the direction shown in Figure 27. Therefore, it is apt to be affected by external light interference. The reflective Photomicrosensor, therefore, incorporates a filter to intercept any light, the wavelength of which is shorter than a certain wavelength, to prevent external light interference. The filter does not, however, perfectly intercept the light. Refer to Figure 28 for the light interception characteristics of filters. A location with minimal external light interference is best suited for the reflective Photomicrosensor. Figure 29. Influence of Background Object Sensing object Sensor Background object With regard to the background conditions, the following description is based on the assumption that the background is totally dark. Figure 29 shows that the optical beam emitted from the LED incorporated by a reflective Photomicrosensor is reflected by a sensing object and background object. The optical beam reflected by the background object and received by the phototransistor incorporated by the detector is considered noise that lowers the signal-noise ratio of the phototransistor. If any reflective Photomicrosensor is used to sense paper passing through the sensing area of the reflective Photomicrosensor on condition that there is a stainless steel or zinc-plated object behind the paper, the light current (IL(N)) of the phototransistor not sensing the paper may be larger than the light current (IL(S)) of phototransistor sensing the paper, in which case remove the background object, make a hole larger than the area of the sensor surface in the background object as shown in Figure 30, coat the surface of the background object with black lusterless paint, or roughen the surface of the background. Most malfunctions of a reflective Photomicrosensor are caused by an object located behind the sensing objects of the reflective Photomicrosensor. Unlike the output (i.e., IL) of any transmissive Photomicrosensor, the Technical Information 25 light current (IL) of a reflective Photomicrosensor greatly varies according to sensing object type, sensing distance, and sensing object size. Figure 30. Example of Countermeasure Cutout Light current IL (A) Figure 31. Sensing Distance Characteristics (EE-SF5) a: Aluminum b: White paper with a reflection factor of 90% c: Pink paper d: OHP sheet e: Tracing paper f: Black sponge Ta = 25 IF = 20 mA VCE =10 V The light current (IL) of the phototransistor incorporated by the transmissive Photomicrosensor is output when there is no sensing object in the sensing groove of the transmissive Photomicrosensor. On the other hand, the light current (IL) of the phototransistor incorporated by the reflective Photomicrosensor is output when there is a standard object specified by OMRON located in the standard sensing distance of the reflective Photomicrosensor. The light current (IL) of the phototransistor incorporated by the reflective Photomicrosensor varies when the reflective Photomicrosensor senses any other type of sensing object located at a sensing distance other than the standard sensing distance. Figure 31 shows how the output of the phototransistor incorporated by the EE-SF5(B) varies according to varieties of sensing objects and sensing distances. Before using the EE-SF5(-B) to sense any other type of sensing objects, measure the light currents of the phototransistor in actual operation with and without one of the sensing objects as shown in Figure 32. After measuring the light currents, calculate the signal-noise ratio of the EE-SF5(-B) due to the sensing object to make sure if the sensing objects can be sensed smoothly. The light current of the reflective Photomicrosensor is, however, several tens to hundreds of microamperes. This means that the absolute signal levels of the reflective Photomicrosensor are low. Even if the reflective Photomicrosensor in operation is not interfered by external light, the dark current (ID) and leakage current (ILEAK) of the reflective Photomicrosensor, which are considered noise, may amount to several to ten-odd microamperes due to a rise in the ambient temperature. This noise cannot be ignored. As a result, the signalnoise ratio of the reflective Photomicrosensor will be extremely low if the reflective Photomicrosensor senses any object with a low reflection ratio. Pay utmost attention when applying the reflective Photomicrosensor to the sensing of the following. * Marked objects (e.g., White objects with a black mark each) * Minute objects The above objects can be sensed if the signal-noise ratio of the reflective Photomicrosensor is not too low. The reflective Photomicrosensor must be used with great care, otherwise it will not operate properly. Figure 32. Output Current Measurement Distance d (mm) 26 Technical Information Actual operation Precautions Correct Use WARNING Do not use this product in sensing devices designed to provide human safety. Precautions for Safe Use * Use the product within the rated voltage range. Applying voltages beyond the rated voltage ranges may result in damage or malfunction to the product. * Wire the product correctly and be careful with the power supply polarities. Incorrect wiring may result in damage or malfunction to the product. * Connect the loads to the power supply. Do not short-circuit the loads. Short-circuiting the loads may result in damage or malfunction to the product. 3. Do not mount Photomicrosensors to plates stained with machining oil, otherwise the machining oil may cause cracks on the Photomicrosensors. 4. Do not impose excessive forces on Photomicrosensors mounted to PCBs. Make sure that no continuous or instantaneous external force exceeding 500 g (4.9 N) is imposed on any lead wire of the Photomicrosensors. PCB Mounting Holes Unless otherwise specified, the PCB to which a Photomicrosensor is mounted must have the following mounting holes. Four Terminals Terminal pitch 0.1 Four, 0.80.1 dia. Terminal pitch 0.1 Precautions for Correct Use Structure and Materials Five Terminals The emitter and detector elements of conventional Photomicrosensors are fixed with transparent epoxy resin and the main bodies are made of polycarbonate. Unlike ICs and transistors, which are covered with black epoxy resin, Photomicrosensors are subject to the following restrictions. 1. Low Heat Resistivity The storage temperature of standard ICs and transistors is approximately 150C. The storage temperature of highly resistant Photomicrosensors is 100C maximum. The heat resistance of the EE-SY169 Series which use ABS resin in the case, is particularly low (80C maximum). 2. Low Mechanical Strength Black epoxy resin, which is used for the main bodies of ICs and transistors, contains additive agents including glass fiber to increase the heat resistivity and mechanical strength of the main bodies. Materials with additive agents cannot be used for the bodies of Photomicrosensors because Photomicrosensors must maintain good optical permeability. Unlike ICs and transistors, Photomicrosensors must be handled with utmost care because Photomicrosensors are not as heat or mechanically resistant as ICs and transistors. No excessive force must be imposed on the lead wires of Photomicrosensors. Mounting Screw Mounting If Photomicrosensors have screw mounting holes, the Photomicrosensors can be mounted with screws. Unless otherwise specified, refer to the following when tighten the screws. Hole diameter Screw size Tightening torque 1.5 dia. M1.4 0.20 N * m 2.1 dia. M2 0.34 N * m 3.2 dia. M3 0.54 N * m 4.2 dia. M4 0.54 N * m Read the following before tightening the screws. 1. The use of a torque screwdriver is recommended to tighten each of the screws so that the screws can be tightened to the tightening torque required. 2. The use of a screw with a spring washer and flat washer for the mounting holes of a Photomicrosensor is recommended. If a screw with a spring washer but without a flat washer is used for any mounting hole, the part around the mounting hole may crack. Terminal pitch 0.1 Five, 0.80.1 dia. Terminal pitch 0.1 Terminal pitch 0.1 Soldering Lead Wires Make sure to solder the lead wires of Photomicrosensors so that no excessive force will be imposed on the lead wires. If an excessive forces is likely to be imposed on the lead wires, hold the bases of the lead wires. Soldering Temperature Regardless of the device being soldered, soldering should be completed quickly so that the devices are not subjected to thermal stress. Care is also required in the processing environment for processes other than soldering so that the devices are not subject to thermal stress or other external force. 1. Manual Soldering Unless otherwise specified, the lead wires of Photomicrosensors can be soldered manually under the following conditions. These conditions must also be maintained when using lead-free solder, i.e., soldering with lead-free solder is possible as long as the following conditions are maintained. Soldering temperature: 350C max. (The temperature of the tip of a 30-W soldering iron is approximately 320C when the soldering iron is heated up.) Soldering time: 3 s max. Soldering position: At least 1.5 mm away from the bases of the lead wires. The temperature of the tip of any soldering iron depends on the shape of the tip. Check the temperature with a thermometer before soldering the lead wires. A highly resistive soldering iron incorporating a ceramic heater is recommended for soldering the lead wires. Precautions 27 2. Dip Soldering The lead wires of Photomicrosensors can be dip-soldered under the following conditions unless otherwise specified. Preheating temperature: Must not exceed the storage temperature of the Photomicrosensors. Soldering temperature: 260C max. (the lead wires) Soldering time: 10 s max. Soldering position: At least 0.3 mm away from the bases of the housing. The soldering temperature is specified as the temperature applied to the lead terminals. Do not subject the cases to temperatures higher than the maximum storage temperature. It is also possible for the sensor case to melt due to residual heat of the PCB. When using a PCB with a high thermal capacity (e.g., those using fiber-glass reinforced epoxy substrates), confirm that the case is not deformed and install cooling devices as required to prevent distortion. Particular care is required for the EE-SY169 Series, which use ABS resin in the case. Do not use non-washable flux when soldering EE-SA-series Photomicrosensors, otherwise the Photomicrosensors will have operational problems. For other Photomicrosensors, check the case materials and optical characteristics carefully to be sure that residual flux does not adversely affect them. 3. Reflow Soldering The reflow soldering of Photomicrosensors is not possible except for the EE-SX1107, -SX1108, -SX1109, -SX1131, -SX4134, EESY125 and EE-SY193. The reflow soldering of these products must be performed carefully under the conditions specified in the datasheets of these products, respectively. Before performing the reflow soldering of these products, make sure that the reflow soldering equipment satisfies the conditions. Compared to general ICs, optical devices have a lower resistance to heat. This means the reflow temperature must be set to a lower temperature. Observe the temperature provides provided in the specifications when mounting optical devices. 4. External Forces Immediately Following Soldering The heat resistance and mechanical strength of Photomicrosensors are lower than those of ICs or transistors due to their physical properties. Care must thus be exercised immediately after soldering (particularly for dip soldering) so that external forces are not applied to the Photomicrosensors. 2. Cleaning Method Unless otherwise specified, Photomicrosensors other than the EE-SA105 and EE-SA113 can be cleaned under the following conditions. Do not apply an unclean detergent to the Photomicrosensors. DIP cleaning: OK Ultrasonic cleaning: Depends on the equipment and the PCB size. Before cleaning Photomicrosensors, conduct a cleaning test with a single Photomicrosensor and make sure that the Photomicrosensor has no broken lead wires after the Photomicrosensor is cleaned. Brushing: The marks on Photomicrosensors may be brushed off. The emitters and detectors of reflective Photomicrosensors may have scratches and deteriorate when they are brushed. Before brushing Photomicrosensors, conduct a brushing test with a single Photomicrosensor and make sure that the Photomicrosensor is not damaged after it is brushed. External Forces LED Drive Currents The heat resistivity and mechanical strength of Photomicrosensors are lower than those of ICs or transistors. Do not to impose external force on Photomicrosensors immediately after the Photomicrosensors are soldered. Especially, do not impose external force on Photomicrosensors immediately after the Photomicrosensors are dip-soldered. Photomicrosensors consist of LEDs and light detectors. Generally speaking, temporal changes occur to LEDs when power is supplied to them (i.e., the amount of light emitted diminishes). With less light, the photoelectric current is reduced for a sensor with a phototransistor output or the threshold current is increased for a sensor with a photo-IC output. Design circuits with sufficient consideration to the decline in the emitted light level. The reduction in emitted light is far greater for red LEDs than for infrared LEDs. Also, with red LEDs that contain aluminum, aluminum oxide will form if they are powered under high humidities, calling for a greater need for consideration of the decline in the emitted light level. Cleaning Precautions Cleaning Photomicrosensors except the EE-SA105 and EE-SA113 can be cleaned subject to the following restrictions. 1. Types of Detergent Polycarbonate is used for the bodies of most Photomicrosensors. Some types of detergent dissolve or crack polycarbonate. Before cleaning Photomicrosensors, refer to the following results of experiments, which indicate what types of detergent are suitable for cleaning Photomicrosensors other than the EE-SA105 and EE-SA113. Observe the law and prevent against any environmental damage when using any detergent. Results of Experiments Ethyl alcohol: OK Methyl alcohol: OK Isopropyl alcohol: OK Trichlene: NG Acetone: NG Methylbenzene: NG Water (hot water): The lead wires corrode depending on the conditions 28 Precautions Operating and Storage Temperatures Observe the upper and lower limits of the operating and storage temperature ranges for all devices and do not allow excessive changes in temperature. As explained in the restrictions given in Structure and Materials, elements use clear epoxy resin, giving them less resistance to thermal stress than normal ICs or transistors (which are sealed with black epoxy resin). Refer to reliability test results and design PCBs so that the devices are not subjected to excessive thermal stress. Even for applications within the operating temperature range, care must also be taken to control the humidity. As explained in the restrictions given in Structure and Materials, elements use clear epoxy resin, giving them less resistance to humidity than normal ICs or transistors (which are sealed with black epoxy resin). Refer to reliability test results and design PCBs so that the devices are not subjected to excessive thermal stress. Photomicrosensors are designed for application under normal humidities. When using them in humidified or dehumidified, high-humidity or low-humidity, environments, test performance sufficiently for the application. Light Interceptors Select a material for the light interceptor with superior interception properties. If a material with inferior light interception properties, such as a plastic that is not black, is used, light may penetrate the interceptor and cause malfunction. With Photomicrosensors, most of which use infrared LEDs, a material that appears black to the human eye (i.e., in the visible light range) may be transparent to infrared light. Select materials carefully. Guideline for Light Interceptors When measuring the light interception properties of the light interceptor, use 0.1% maximum light transmission as a guideline. IF IL RF Vcc OUT RL GND Criteria Where, IL1 is the IL for light reception IL2 is the IL for light interception by the intercepter VTH is the threshold voltage IF1 is the IF for measurement of IL given in product specifications IF2 is the IF in actual application ( = (VCC - VF)/RF = (VCC - 1.2)/RF) ILMAX is the standard upper limit of the optical current IL Then, Light transmission = IL2/IL1 = Here there should be no problems if the following equation is satisfied. VTH (IF2/IF1) x ILMAX x RL x Caution is required, however, because there are inconsistencies in light transmission. Reflectors The reflectors for most Photomicrosensors are standardized to white paper with a reflection ratio of 90%. Design the system to allow for any differences in the reflection ratio of the detection object. With Photomicrosensors, most of which use infrared LEDs, a material that appears black to the human eye (i.e., in the visible light range) may have a higher reflection ratio. Select materials carefully. Concretely, marks made with dye-based inks or marks made with petroliumbased magic markers (felt pens) can have the same reflection ratio for infrared light as white paper. The reflectors for most Photomicrosensors are standardized to white paper with a reflection ratio of 90%. Paper, however, disperses light relatively easily, reducing the effect of the detection angle. Materials with mirrored surfaces, on the other hand, show abrupt changes in angle characteristics. Check the reflection ratio and angles sufficiently for the application. The output from most Photomicrosensors is determined at a specified distance. Characteristics will vary with the distance. Carefully check characteristics at the specific distance for the application. Output Stabilization Time Photomicrosensors with photo-IC outputs require 100 ms for the internal IC to stabilize. Set the system so that the output is not read for 100 ms after the power supply is turned ON. Also be careful if the power supply is turned OFF in the application to save energy when the Photomicrosensor is not used. When using a Photomicrosensor with a phototransistor output outside of the saturation region, stabilization time is required to achieve thermal balance. Care is required when using a variable resistor or other adjustment. Precautions 29 Application Examples Most People May Not Realize the Fact that Photomicrosensors are Built Into Machines and Equipment that are Used Everyday Office Automation Machines Copy machines Facsimiles Printers X-Y plotters Mouse Image scanners FDD Photomicrosensor Household products VCRs Camcorders Audio equipment Microwave ovens Air conditioners Fan heaters Vacuum cleaners 30 Application Examples Others Automatic vending machines Cameras Slot machines Garage doors Pinball machines Game machines Application Examples Classification Household products Products VCRs Camcorders Lens origin sensing and lens control Laserdisc players Rotation sensing and disk size sensing Air conditioners/Fan heaters Louver direction sensing and fan motor rotation sensing Microwave ovens Turntable sensing Vacuum cleaners Carpet and floor discrimination Office automation ma- Printers chines Copy machines Others Sensing example Rotating reel sensing and tape sensing Origin sensing, paper sensing, paper size sensing, and ink ribbon end sensing Paper sensing, cassette sensing, and toner sensing Facsimiles Paper sensing, black end mark sensing, paper size sensing Floppy disk drives Disk sensing, origin sensing, and write protect sensing Optical disk drives Disk sensing, disk type sensing, and write protection sensing Image scanners Origin sensing and movement value sensing Mouse Movement direction sensing and movement value sensing X-Y plotters Paper sensing, origin sensing, pen sensing, and movement value sensing Automatic vending machines/Ticket machines Coin sensing, coin discrimination, and ticket sensing Cameras Film forwarding, lens control, and motor control Cash dispensers Card sensing, bill sensing, mechanical control Robot/Machine tools Mechanical control Sewing machines Motor rotation sensing and needle position sensing Pinball machines Ball sensing, mechanical control, and sensing of remaining balls Slot machines Coil sensing and lever sensing Game machines Prize sensing, coil sensing, and mechanical control Garage doors Door opening and closing sensing Application Examples 31 Photomicrosensor (Transmissive) EE-SX1018 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact model with a 2-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item 0.50.05 Four, C0.3 Emitter IF Detector Four, 0.25 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA 100 mW (see note 1) Collector dissipation PC Cross section AA Ambient temperature Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Internal Circuit K C A E Dimensions 3 mm max. 0.3 3 < mm 6 K C 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 E Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance Terminal No. Name A Anode Cathode Collector Soldering temperature Unless otherwise specified, the tolerances are as shown below. Rated value 50 mA (see note 1) Pulse forward current IFP Optical axis Four, 0.5 Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V IF = 30 mA Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 32 EE-SX1018 Photomicrosensor (Transmissive) Engineering Data IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) IF = 20 mA VCE = 5 V Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Ta = 70C Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 50 mA Ta = -30C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Sensing Position Characteristics (Typical) 120 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Ta = 25C Ta = 25C VCE = 10 V Dark current ID (nA) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1018 Photomicrosensor (Transmissive) 33 Photomicrosensor (Transmissive) EE-SX1023-W1 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 2.1-mm-wide slot. * Harness type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Two, R1.60.1 Item Emitter Symbol Forward current IF Pulse forward current IFP Detector 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA 100 mW (see note 1) Collector dissipation PC Ambient temperature Cross section A-A Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature K C A E Terminal No. A K C E Operating 4-wire UL1007 AWG26 80C 300 V Internal Circuit Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.200 3 < mm 6 0.240 6 < mm 10 0.290 10 < mm 18 0.350 18 < mm 30 0.420 30 < mm 50 0.500 50 < mm 80 0.600 Rated value 50 mA (see note 1) Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min. IF = 20 mA, VCE = 5 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 34 EE-SX1023-W1 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Forward current IF (mA) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C Forward voltage VF (V) Relative light current IL (%) Light current IL (mA) IF = 40 mA Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = -30C Dark current ID (nA) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Sensing Position Characteristics (Typical) 120 Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 80 d 60 40 20 0 -2.0 Load resistance RL (k) Ta = 25C VCE = 10 V (Center of optical axis) Ambient temperature Ta (C) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1023-W1 Photomicrosensor (Transmissive) 35 Photomicrosensor (Transmissive) EE-SX1031 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High resolution with a 0.5-mm-wide aperture. * Separate LED/Phototransistor combinations within a single housing. * PCB mounting type. 0.3 1 EE-SX 1031 0.5 Silver or white marking 2 JAPAN 13.6 Absolute Maximum Ratings (Ta = 25C) Optical Optical axis (2) axis (1) 13.6 7.10.13 3.4 0.2 Item Emitter 10.2 7.2 Detector Optical axis 2-2.1 3 Eight, 0.25 Four, 2.54 Eight, 0.5 7.1 A 7.6 Ambient temperature Cross section AA A (2) (1) E C K E A K C (Bottom View) K (1) C (1) A (1) E (1) K (2) C (2) A (2) E (2) Rated value IF 50 mA (see note) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Collector current IC 20 mA Collector dissipation PC 100 mW Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C 3.2 Two, 0.5 A Symbol Forward current Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Collector-Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time (see note) tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector Forward voltage Note: Refer to Response Time Measurement Circuit. 36 EE-SX1031 Photomicrosensor (Transmissive) IF = 30 mA Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) IF Ambient temperature Ta (C) Ta = -30C Ta = 25C Ta = 70C Forward current IF (mA) Dark current ID (nA) VCE = 10 V 0 lx PC (max.) rated IF = 30 mA IF = 20 mA Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C Light current IL (mA) Ta = 25C VCE = 10 V Forward voltage VF (V) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 40 mA Light Current vs. Forward Current Characteristics (Typical) Light current IL (mA) Collector dissipation PC (mW) Forward current IF (mA) PC Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 10 mA VCE = 10 V IF = 10 mA A B B A Response time tr, tf (s) d Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Sensing Position Characteristics (Typical) Ta = -25C VCC = 10 V RL = 4.7K RL = 1K RL = 500K RL = 100K 120 80 Light current IL (mA) d 60 40 20 0 -2.0 Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Relative light current IL (%) Sensing Position Characteristics (Typical) Ambient temperature Ta (C) Relative light current IL (%) Collector-Emitter voltage VCE (V) -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1031 Photomicrosensor (Transmissive) 37 Photomicrosensor (Transmissive) EE-SX1035 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact model with a 5.2-mm-wide slot. * PCB mounting type. Absolute Maximum Ratings (Ta = 25C) 6.3 Item Emitter 10.1 Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) 10.1 10.1 Optical axis Detector Four, 0.25 Four, 0.5 Cross section AA Cross section BB (2.5) Ambient temperature Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Internal Circuit K C A E Terminal No. A K C E Soldering temperature Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Forward voltage IF = 30 mA Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 38 EE-SX1035 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) Light current IL (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Forward current IF (mA) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Ta = 70C Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 80 Response Time Measurement Circuit Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Ta = 25C Ta = -30C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) Collector dissipation PC (mW) Forward current IF (mA) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Input Output 90 % 10 % Input Output EE-SX1035 Photomicrosensor (Transmissive) 39 Photomicrosensor (Transmissive) EE-SX1041 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 5-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 0.2 max. 140.2 0.2 max. Absolute Maximum Ratings (Ta = 25C) 60.2 0.50.1 Emitter Optical axis Detector 5 min. Two, 0.7 0.1 Four, 0.25 2.350.1 Four, 0.5 5.20.1 Two, 2.54 Two, 0.70.1 dia. Internal Circuit C A E Terminal No. Symbol Forward current IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Name Anode Cathode Collector Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions Operating Topr -25C to 95C Tstg -30C to 100C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Storage Soldering temperature K A K C E Ambient temperature Item Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 40 EE-SX1041 Photomicrosensor (Transmissive) Engineering Data IF = 20 mA IF = 10 mA Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Forward current IF (mA) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 30 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = -30C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1041 Photomicrosensor (Transmissive) 41 Photomicrosensor (Transmissive) EE-SX1042 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * 14.5-mm-tall model with a deep slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Four, C0.3 Absolute Maximum Ratings (Ta = 25C) Item 0.50.05 Emitter 14.5 120.4 Detector 5 min. Four, 0.25 (11.2) (1.92) Cross section AA Ambient temperature K C A E Name Anode Cathode Collector Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Internal Circuit Terminal No. A K C E Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 42 EE-SX1042 Photomicrosensor (Transmissive) Engineering Data IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C Dark current ID (nA) Relative light current IL (%) Light current IL (mA) IF = 30 mA Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 40 mA Ta = -30C Forward voltage VF (V) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 50 mA Ta = 25C VCE = 10 V IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Sensing Position Characteristics (Typical) 120 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Ambient temperature Ta (C) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1042 Photomicrosensor (Transmissive) 43 Photomicrosensor (Transmissive) EE-SX1046 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * With a horizontal sensing aperture. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Optical axis 5 Absolute Maximum Ratings (Ta = 25C) 6.5 2.5 Item Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) 100.3 0.50.1 0.50.1 Optical axis Optical axis Detector Four, 0.25 9 min. 0.3 max. Four, 0.25 Cross section BB 0.25 max. Cross section AA Ambient temperature Internal Circuit K C A E Dimensions 3 mm max. Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 1.2 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 44 EE-SX1046 Photomicrosensor (Transmissive) Engineering Data Ta = -30C Ta = 25C Ta = 70C Ambient temperature Ta (C) IF = 30 mA IF = 20 mA IF = 10 mA Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx Dark current ID (nA) IF = 40 mA Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Light current IL (mA) IF = 50 mA Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 80 d 60 40 20 -0.5 -0.25 0 0.25 Distance d (mm) 0.5 0.75 Relative light current IL (%) 100 0 -0.75 Load resistance RL (k) IF = 20 mA VCE = 5 V Ta = 25C (Center of optical axis) Response time tr, tf (s) Relative light current IL (%) 120 VCC = 5 V Ta = 25C IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) 80 d 60 40 20 0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1046 Photomicrosensor (Transmissive) 45 Photomicrosensor (Transmissive) EE-SX1049 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact with a slot width of 2 mm. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 9 Absolute Maximum Ratings (Ta = 25C) Optical axis 4 Item Four, C0.3 2 Two, 0.5 Emitter A 2 max. Optical 0 axis 5.2 -0.2 2 max. Optical axis Optical axis 1.2 Detector 9 min. Four, 0.25 Four, 0.5 2.5 0.70.1 C0.3 0 1.2 -0.05 dia. C A Cross section AA C A A K C E 2.5 A Cross section BB Name Anode Cathode Collector Emitter Ambient temperature Unless otherwise specified, the tolerances are as shown below. 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature E Terminal No. B 0.25 max. 60.2 Internal Circuit K 0.3 max. K Dimensions Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF B 1.5 1.5 E Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 46 EE-SX1049 Photomicrosensor (Transmissive) Engineering Data 30 50 20 10 -20 0 20 40 60 Ta = -30C Ta = 70C 30 20 10 0 0 100 80 Ta = 25C 40 0 0.2 Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 30 mA 10 IF = 20 mA 8 6 IF = 10 mA 4 2 0 1 2 3 4 5 6 7 8 9 Relative light current IL (%) Response time tr, tf (s) 1,000 tf 100 tr 10 Load resistance RL (k) 4 2 0 10 30 40 50 Dark Current vs. Ambient Temperature Characteristics (Typical) 1,000 100 90 80 70 VCE = 10 V 0 lx 100 10 1 0.1 0.01 -20 0 20 40 60 80 0.001 -30 -20 -10 0 100 d 60 40 20 -0.5 -0.25 0 0.25 0.5 0.75 Distance d (mm) 1.0 Sensing Position Characteristics (Typical) 120 (Center of optical axis) 80 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (C) IF = 20 mA VCE = 10 V Ta = 25C 100 0 20 Forward current IF (mA) 10,000 120 VCC = 5 V Ta = 25C 1 6 0 1.8 Sensing Position Characteristics (Typical) 10,000 0.1 1.6 8 Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) 1 0.01 1.4 IF = 20 mA VCE = 10 V 110 60 -40 10 Collector-Emitter voltage VCE (V) 10 1.2 Dark current ID (nA) Relative light current IL (%) Light current IL (mA) 14 12 1 120 IF = 40 mA 16 0.8 Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 50 mA Ta = 25C 18 0.6 Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) 20 0.4 Relative light current IL (%) 0 -40 50 Light current IL (mA) 100 Forward current IF (mA) PC 40 Collector dissipation PC (mW) Forward current IF (mA) IF 10 60 150 60 50 Light Current vs. Forward Current Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input 0 t Output 90 % 10 % 0 Input t tf tr IL VCC Output RL EE-SX1049 Photomicrosensor (Transmissive) 47 Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Longer leads allow the sensor to be mounted to a 1.6-mm thick board. * 5.4-mm-tall compact model. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 0.2 max. 0.2 max. Absolute Maximum Ratings (Ta = 25C) Four, 5 0.50.05 White band Item Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Optical axis 5.40.2 3.60.5 Detector Four, 0.5 Four, 0.25 Cross section AA Ambient temperature Internal Circuit Soldering temperature K C A E Terminal No. A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 48 EE-SX1055 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) Ta = 25C Light current IL (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Forward current IF (mA) Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C VCE = 10 V Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response time tr, tf (s) Relative light current IL (%) 120 VCC = 5 V Ta = 25C -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1055 Photomicrosensor (Transmissive) 49 Photomicrosensor (Transmissive) EE-SX1057 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact model with a 3.6-mm-wide slot. * PCB mounting type. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature K C A E Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 < mm 6 0.2 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 3 mm max. Name A K C Anode Cathode Collector E Emitter Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Internal Circuit Terminal No. Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.15 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 1.5 mA min., 8 mA typ., 30 mA max. IF = 15 mA, VCE = 2 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.4 V max. IF = 30 mA, IL = 1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ., 20 A max. VCC = 10 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ., 20 A max. VCC = 10 V, RL = 100 , IL = 5 mA 50 EE-SX1057 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 50 mA Ta = -30C Dark current ID (nA) Light current IL (mA) Ta = 25C Ta = 25C VCE = 10 V Forward voltage VF (V) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1057 Photomicrosensor (Transmissive) 51 Photomicrosensor (Transmissive) EE-SX1061 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 4.6-mm-wide slot. * PCB mounting type. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -40C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 2) Soldering temperature Internal Circuit K C A E Tolerance 0.3 3 mm max. Terminal No. A K C E Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are as shown below. Dimensions Rated value Forward current 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 1.3 mA min., 26 mA max. IF = 20 mA, VCE = 12 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.8 V max. IF = 10 mA, Vcc = 12 V, RL = 22k Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 1,000 s max. VCC = 12 V, RL = 22k , IL = 10 mA Falling time tf 1,000 s max. VCC = 12 V, RL = 22k , IL = 10 mA Detector 52 EE-SX1061 Photomicrosensor (Transmissive) Engineering Data Ta = -30C Ta = 25C Ta = 70C Ambient temperature Ta (C) Ta = 25C Light current IL (mA) 18 16 IF = 50 mA 14 IF = 40 mA 12 10 IF = 30 mA 8 IF = 20 mA 6 4 IF = 10 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 12 V Dark current ID (nA) 20 Forward current IF (mA) Forward voltage VF (V) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 2 Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) -2 Load resistance RL (k) -1 1 2 3 Distance d (mm) 4 IF = 20 mA VCE = 12 V Ta = 25C 100 (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) IF = 20 mA VCE = 12 V Ta = 25C Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1061 Photomicrosensor (Transmissive) 53 Photomicrosensor (Transmissive) EE-SX1070 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Wide model with a 8-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. JAPAN 17.7 60.2 Absolute Maximum Ratings (Ta = 25C) Item 0.50.1 8 +0.2 -0.1 Two, C1 Emitter Optical axis 0 10 -0.2 7.50.2 2.2 2.5 6.2 Detector Two, 0.70.1 Four, 0.5 Four, 0.25 (2.5) (13.8) 2.350.1 (2.5) 5.20.1 K C A E 6.60.1 Ambient temperature Two, 0.70.1 dia. Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 95C Storage Tstg -30C to 100C Tsol 260C (see note 3) Internal Circuit K C A E Dimensions 3 mm max. Terminal No. A K C E Name Anode Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 54 EE-SX1070 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Light Current vs. Forward Current Characteristics (Typical) 100 30 50 20 10 -20 0 20 40 60 Ta = 25C Ta = 70C 0 100 80 Ambient temperature Ta (C) Ta = 25C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Ta = -30C Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) 0 -40 Ta = 25C VCE = 10 V Light current IL (mA) PC 40 Forward current IF (mA) IF 50 Collector dissipation PC (mW) 150 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1070 Photomicrosensor (Transmissive) 55 Photomicrosensor (Transmissive) EE-SX1071 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 3.4-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) 6.2 Item Emitter Four, C0.3 2.1 Optical axis 10.2 7.2 Detector Four, 0.25 Cross section BB (2.54) Cross section AA Ambient temperature Internal Circuit K C A E Terminal No. Name A Anode K C E Cathode Collector Emitter 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 0.5 0.2 Four, 0.5 Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 56 EE-SX1071 Photomicrosensor (Transmissive) Engineering Data Light current IL (mA) Ta = 25C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Load resistance RL (k) Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Ta = 70C Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = -30C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Distance d (mm) Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Ambient temperature Ta (C) Ta = 25C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1071 Photomicrosensor (Transmissive) 57 Photomicrosensor (Transmissive) EE-SX1081 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 5-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Four, C0.3 13.70.3 Item 5+0.1 0.50.1 Emitter Two, C10.3 (Optical axis) 7.50.2 6.50.1 6.20.5 Four, 0.50.1 Detector Four, 0.250.1 (10.5) Cross section BB Cross section AA Ambient temperature Internal Circuit K C 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) A E Terminal No. A Name Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 2.50.2 100.2 8.50.1 Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 58 EE-SX1081 Photomicrosensor (Transmissive) Engineering Data IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 80 Response Time Measurement Circuit Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 30 mA Ta = 25C Dark current ID (nA) IF = 40 mA Ta = -30C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 50 mA Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Input Output 90 % 10 % Input Output EE-SX1081 Photomicrosensor (Transmissive) 59 Photomicrosensor (Transmissive) EE-SX1082 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Horizontal sensing aperture. * PCB mounting type. * High resolution with a 0.2-mm-wide aperture. E Absolute Maximum Ratings (Ta = 25C) C Item Emitter Detector Ambient temperature Internal Circuit K Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -40C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) C Soldering temperature A E Terminal No. Name A K C Anode Cathode Collector E Emitter Unless otherwise specified, the tolerances are 0.2 mm. Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 0.12 mA min. IF = 20 mA, VCE = 5 V VCE = 10 V, 0 lx Forward voltage IF = 30 mA Dark current ID 2 nA typ., 200 nA max. Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.08 V typ., 0.4 V max. IF = 20 mA, IL = 0.05 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 100 s typ. VCC = 5 V, RL = 50 k, IL = 0.1 mA Falling time tf 1,000 s typ. VCC = 5 V, RL = 50 k, IL = 0.1 mA 60 EE-SX1082 Photomicrosensor (Transmissive) Engineering Data Ta = 25C Ta = 70C IF = 30 mA IF = 20 mA IF = 10 mA IF = 20 mA VCE = 5 V Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Ambient temperature Ta (C) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 80 60 d 40 20 0 Load resistance RL (k) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx Dark current ID (nA) IF = 40 mA Dark Current vs. Ambient Temperature Characteristics (Typical) -0.2 -0.1 0 0.1 0.2 0.3 Distance d (mm) 0.4 Sensing Position Characteristics (Typical) 120 Relative light current IL (%) IF = 50 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Ta = -30C (Center of optical axis) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) 80 d 60 40 20 0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1082 Photomicrosensor (Transmissive) 61 Photomicrosensor (Transmissive) EE-SX1088 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * 250.2 190.15 Two, R1 50.2 60.2 Four, C0.3 Two, 3.20.2 dia. holes Two, C2 Absolute Maximum Ratings (Ta = 25C) 0.50.1 0.50.1 Item 6.50.1 (Optical axis) Emitter 100.2 7.20.2 8.40.1 2.50.1 30.4 General-purpose model with a 3.4-mm-wide slot. Mounts to PCBs or connects to connectors. High resolution with a 0.5-mm-wide aperture. OMRON's XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Four, 0.25 Four, 0.5 Detector Cross section BB Cross section AA Internal Circuit K C A Ambient temperature Unless otherwise specified, the tolerances are as shown below. E Dimensions 3 mm max. 0.3 3 < mm 6 0.375 K C Cathode Collector 6 < mm 10 0.45 10 < mm 18 0.55 E Emitter 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Tolerance Terminal No. Name A Anode Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 62 EE-SX1088 Photomicrosensor (Transmissive) Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1088 Photomicrosensor (Transmissive) 63 Photomicrosensor (Transmissive) EE-SX1096 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * 250.2 190.15 Two, R1 50.2 60.2 Two, 3.20.2 dia. holes Four, C0.3 Two, C2 General-purpose model with a 3.4-mm-wide slot. Mounts to PCBs or connects to connectors. High resolution with a 0.5-mm-wide aperture. With a horizontal sensing slot. OMRON's XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Absolute Maximum Ratings (Ta = 25C) 2.10.15 2.10.15 Item 0.50.1 0.50.1 Emitter (Optical axis) 100.2 7.20.2 2.50.1 Four, 0.5 30.4 Four, 0.25 Detector Cross section AA Cross section BB Internal Circuit K C A Unless otherwise specified, the tolerances are as shown below. E Dimensions Tolerance 3 mm max. 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 E 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature 0.3 Terminal No. Name A Anode K Cathode C Collector Emitter Ambient temperature Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 64 EE-SX1096 Photomicrosensor (Transmissive) Engineering Data Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 20 mA IF = 10 mA Dark current ID (nA) IF = 30 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Ambient temperature Ta (C) 120 80 d 60 40 20 -0.5 -0.25 0 0.25 0.5 Distance d (mm) 0.75 1.0 Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 0 Load resistance RL (k) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx Relative light current IL (%) IF = 40 mA Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Light current IL (mA) Ta = 25C IF = 50 mA Forward current IF (mA) Forward voltage VF (V) (Center of optical axis) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 100 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1096 Photomicrosensor (Transmissive) 65 Photomicrosensor (Transmissive) EE-SX1103 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a sensor width of 5 mm and a slot width of 2 mm. * PCB mounting type. * High resolution with a 0.4-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Two, C0.5 Item Gate Emitter Optical axis dia. Two, C0.3 5 min. Four, 0.5 Detector Four, 0.2 Internal Circuit Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 4.5 V Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 2) Soldering temperature Terminal No. A K C E Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 3 seconds. Name Anode Cathode Collector Emitter Rated value Forward current Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.3 V typ., 1.6 V max. Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 950 nm typ. IF = 50 mA Light current IL 0.5 mA min. IF = 20 mA, VCE = 5 V VCE = 10 V, 0 lx IF = 50 mA Dark current ID 500 nA max. Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.3 mA Peak spectral sensitivity wavelength P 800 nm typ. VCE = 5 V Rising time tr 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA Falling time tf 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA 66 EE-SX1103 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Ambient temperature Ta (C) IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Light current It (mA) Light current IL (mA) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25C Distance d (mm) VCE = 30 V VCE = 20 V VCE = 10 V Ambient temperature Ta (C) Ambient temperature Ta (C) Relative light current IL (%) Response Time vs. Light Current Characteristics (Typical) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) Light current IL (mA) IF = 40 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Ta = 25C IF = 50 mA Forward current IF (mA) Forward voltage VF (V) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 5 V Ta = 25C Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1103 Photomicrosensor (Transmissive) 67 Photomicrosensor (Transmissive) EE-SX1105 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a sensor width of 4.9 mm and a slot width of 2 mm. * Low-height of 3.3 mm. * PCB mounting type. * High resolution with a 0.4-mm-wide aperture. Two, C0.7 Gate Optical axis Four, 0.5 Four, 0.4 Absolute Maximum Ratings (Ta = 25C) Item Emitter Two, R0.15 Two, R0.3 5 min. Four, Detector Cross section AA Internal Circuit Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 4.5 V Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 85C Tsol 260C (see note 2) Soldering temperature Terminal No. Name A Anode K Cathode C Collector E Emitter Note: Unless otherwise specified, the tolerances are 0.2 mm. Rated value Forward current 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 3 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition VF 1.3 V typ., 1.6 V max. Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 950 nm typ. IF = 50 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 5 V Dark current ID 500 nA max. VCE = 10 V, 0 lx Leakage current ILEAK Forward voltage IF = 50 mA --- --- 0.4 V max. IF = 20 mA, IL = 0.1 mA P 800 nm typ. VCE = 5 V Rising time tr 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA Falling time tf 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength 68 EE-SX1105 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Forward Current vs. Forward Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Light current IL (mA) Forward current IF (mA) Forward current IF (mA) Collector dissipation Pc (mW) 2.5 2 1.5 1 0.5 Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 10 mA Dark Current vs. Ambient Temperature Characteristics (Typical) 120 100 80 60 RL = 500 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) RL = 1K VCE = 10 V 20 Collector-Emitter voltage VCE (V) Ta = 25C VCE = 5 V VCE = 30 V VCE = 20 V 40 0 -40 Response Time vs. Light Current Characteristics (Typical) IF = 20 mA VCE = 5 V 140 Dark current ID (nA) IF = 20 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25C Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) IF = 30 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Forward current IF (mA) 160 Ta = 25C IF = 50 mA Forward voltage VF (V) IF = 20 mA VCE = 5 V Ta = 25C RL = 100 Light current lt (mA) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1105 Photomicrosensor (Transmissive) 69 Photomicrosensor (Transmissive) EE-SX1106 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a slot width of 3 mm. * PCB mounting type. * High resolution with a 0.4-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Two, C0.7 Gate Emitter Optical axis 5.4 Detector 5 min. Two, R1 Four, 0.2 Two, C0.2 Four, 0.5 Internal Circuit Ambient temperature 0 dia 1-0.1 1.4 Symbol IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 4.5 V Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 85C Tsol 260C (see note 2) Soldering temperature 0 -0.1 dia Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 3 seconds. Terminal No. Name A Anode K C E Cathode Collector Emitter Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.3 V typ., 1.6 V max. Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 950 nm typ. IF = 50 mA IF = 50 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 5 V Dark current ID 500 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 800 nm typ. VCE = 5 V Rising time tr 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA Falling time tf 10 s typ. VCC = 5 V, RL = 100 , IF = 20 mA Detector 70 EE-SX1106 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Ambient temperature Ta (C) IF = 15 mA IF = 10 mA IF = 5 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCE = 5 V Ta = 25C RL = 1K RL = 500 RL = 100 Light current It (mA) Light current IL (mA) VCE = 10 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Light Current Characteristics (Typical) VCE = 30 V VCE =20 V IF = 20 mA VCE = 5 V Ta = 25C Distance d (mm) Sensing Position Characteristics (Typical) Relative light current IL (%) IF = 20 mA IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 25 mA Forward current IF (mA) Forward voltage VF (V) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 5 V Ta = 25C Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1106 Photomicrosensor (Transmissive) 71 Photomicrosensor (Transmissive) EE-SX1107 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot. * PCB surface mounting type. * High resolution with a 0.15-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Emitter Optical axis Detector Cross section AA Recommended Soldering Pattern Internal Circuit Ambient temperature Terminal No. Name A Anode K C E Cathode Collector Emitter Unless otherwise specified, the tolerances are 0.15 mm. Symbol Rated value Forward current IF 25 mA (see note 1) Pulse forward current IFP 100 mA (see note 2) Reverse voltage VR 5V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -30C to 85C Storage Tstg -40C to 90C Reflow soldering Tsol 240C (see note 3) Manual soldering Tsol 300C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.1 V typ., 1.3 V max. IF = 5 mA Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 50 A min., 150 A typ., 500 A max. IF = 5 mA, VCE = 5 V Dark current ID 100 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 A P 900 nm typ. --- Rising time tr 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Falling time tf 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Peak spectral sensitivity wavelength 72 EE-SX1107 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) Response Time Measurement Circuit Light current IL (mA) Sensing Position Characteristics (Typical) IF = 5 mA VCE = 5 V Distance d (mm) VCE = 10 V VCE =2 V Ambient temperature Ta (C) Ambient temperature Ta (C) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Dark current ID (nA) IF = 5 mA IF = 5 mA VCE = 5 V Sensing Position Characteristics (Typical) Relative light current IL (%) IF = 10 mA Relative Light Current vs. Ambient Dark Current vs. Ambient TemTemperature Characteristics (Typical) perature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 5 mA VCE = 5 V Distance d (mm) Input Output 90 % 10 % Input Output EE-SX1107 Photomicrosensor (Transmissive) 73 Unit: mm (inch) Tape and Reel Reel 210.8 dia. 3302 dia. 20.5 13 0.5 dia. 801 dia. Product name Quantity Lot number 12.4 +2 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part (40 mm min.) Parts mounted Pull-out direction Tape quantity 2,500 pcs./reel 74 EE-SX1107 Photomicrosensor (Transmissive) Leading part (400 mm min.) Empty (40 mm min.) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 216 to 220C Composition: Sn 3.5 Ag 0.75 Cu * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. Temperature 1 to 5C/s 1 to 5C/s 260C max. 255C max. 230C max. 150 to 180C 120 sec 10 sec max. 40 sec max. Time Manual soldering * * * * Use "Sn 60" (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 350C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60C for 24 hours or more Bulk: 80C for 4 hours or more EE-SX1107 Photomicrosensor (Transmissive) 75 Photomicrosensor (Transmissive) EE-SX1108 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a 5-mm-wide sensor and a 1-mm-wide slot. * PCB surface mounting type. * High resolution with a 0.3-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Emitter Optical axis Detector Cross section AA Recommended Soldering Pattern Internal Circuit Ambient temperature Terminal No. Name A Anode K C Cathode Collector E Emitter Symbol Rated value Forward current IF 25 mA (see note 1) Pulse forward current IFP 100 mA (see note 2) Reverse voltage VR 5V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -30C to 85C Storage Tstg -40C to 90C Reflow soldering Tsol 240C (see note 3) Manual soldering Tsol 300C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Unless otherwise specified, the tolerances are 0.15 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.1 V typ., 1.3 V max. IF = 5 mA Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 50 A min., 150 A typ., 500 A max. IF = 5 mA, VCE = 5 V Dark current ID 100 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 A P 900 nm typ. --- Rising time tr 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Falling time tf 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Peak spectral sensitivity wavelength 76 EE-SX1108 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 5 V Light current IL (mA) Forward current IF (mA) Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Forward current IF (mA) Forward voltage VF (V) IF = 5 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) IF = 5 mA VCE = 5 V Distance d (mm) VCE = 10 V VCE = 2 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Dark current ID (nA) IF = 10 mA IF = 5 mA VCE = 5 V Sensing Position Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Relative light current IL (%) Light Current vs. Collector-Emitter Relative Light Current vs. Ambient Dark Current vs. Ambient TemVoltage Characteristics (Typical) Temperature Characteristics (Typical) perature Characteristics (Typical) IF = 5 mA VCE = 5 V Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1108 Photomicrosensor (Transmissive) 77 Unit: mm (inch) Tape and Reel Reel 210.8 dia. 3302 dia. 20.5 13 0.5 dia. 801 dia. Product name Quantity Lot number 12.4 +2 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part (40 mm min.) Parts mounted Pull-out direction Tape quantity 2,000 pcs./reel 78 EE-SX1108 Photomicrosensor (Transmissive) Leading part (400 mm min.) Empty (40 mm min.) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 216 to 220C Composition: Sn 3.5 Ag 0.75 Cu * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. Temperature 1 to 5C/s 1 to 5C/s 260C max. 255C max. 230C max. 150 to 180C 120 sec 10 sec max. 40 sec max. Time Manual soldering * * * * Use "Sn 60" (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60C for 24 hours or more Bulk: 80C for 4 hours or more EE-SX1108 Photomicrosensor (Transmissive) 79 Photomicrosensor (Transmissive) EE-SX1109 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact with a 6-mm-wide sensor and a 3-mm-wide slot. * PCB surface mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Emitter Optical axis Detector Cross section AA Recommended Soldering Pattern Internal Circuit Ambient temperature Terminal No. A K C E Symbol IF 25 mA (see note 1) Pulse forward current IFP 100 mA (see note 2) Reverse voltage VR 5V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -30C to 85C Storage Tstg -40C to 90C Reflow soldering Tsol 240C (see note 3) Manual soldering Tsol 300C (see note 3) Name Anode Cathode Collector Emitter Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Unless otherwise specified, the tolerances are 0.15 mm. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.1 V typ., 1.3 V max. Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 50 A min., 150 A typ., 500 A max. IF = 5 mA, VCE = 5 V Dark current ID 100 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 A Peak spectral sensitivity wavelength P 900 nm typ. --- Rising time tr 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Falling time tf 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Emitter Detector 80 EE-SX1109 Photomicrosensor (Transmissive) IF = 5 mA Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Light current IL (mA) Ta = 25C VCE = 5 V Ambient temperature Ta (C) IF = 10 mA IF = 5 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) VCE = 10 V VCE = 2 V Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) IF = 5 mA VCE = 5 V IF = 5 mA VCE = 5 V Distance d (mm) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Dark Current vs. Ambient TemperTemperature Characteristics (Typical) ature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark current ID (nA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 5 mA VCE = 5 V Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1109 Photomicrosensor (Transmissive) 81 Unit: mm (inch) Tape and Reel Reel 210.8 dia. 330+2 dia. 20.5 13 0.5 dia. 801 dia. Product name Quantity Lot No. 12.4+2 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part (40 mm min.) Parts mounted Pull-out direction Tape quantity 1,000 pcs./reel 82 EE-SX1109 Photomicrosensor (Transmissive) Leading part (400 mm min.) Empty (40 mm min.) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 216 to 220C Composition: Sn 3.5 Ag 0.75 Cu * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. Temperature 1 to 5C/s 1 to 5C/s 260C max. 255C max. 230C max. 150 to 180C 120 sec 10 sec max. 40 sec max. Time Manual soldering * * * * Use "Sn 60" (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60C for 24 hours or more Bulk: 80C for 4 hours or more EE-SX1109 Photomicrosensor (Transmissive) 83 Photomicrosensor (Transmissive) EE-SX1115 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * 14.5-mm-tall model with a deep slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Four, C0.3 1.03 Four, R0.1 Absolute Maximum Ratings (Ta = 25C) 5 1.35 +0.06 -0.01 1.35 +0.06 -0.01 Item 14 0.2 Part B 5 0.50.05 Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) A Four, R0.1 Optical axis 1.03 1.35 +0.06 -0.01 14.5 1.35 120.4 +0.06 -0.01 Detector Part C 2.5 2-2 5 min. A Four, 0.25 Four, 0.5 (11.2) K (1.94) C Cross section AA A B (2.1) Internal Circuit K C A Name A K C Anode Cathode Collector E Emitter 4.20.1 C Soldering temperature Unless otherwise specified, the tolerances are as shown below. E Terminal No. Ambient temperature E Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 84 EE-SX1115 Photomicrosensor (Transmissive) Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C Ta = 70C Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = -30C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Sensing Position Characteristics (Typical) 120 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1115 Photomicrosensor (Transmissive) 85 Photomicrosensor (Transmissive) EE-SX1128 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * General-purpose model with a 4.2-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Horizontal sensing aperture. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Internal Circuit K C A E Terminal No. A K C E Name Anode Cathode Collector Emitter 0.100 4 < x 18 0.200 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 0<x4 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 10 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 86 EE-SX1128 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Ta = 25C Ta = 70C IF = 50 mA 14 IF = 40 mA 12 10 IF = 30 mA 8 IF = 20 mA 6 4 IF = 10 mA 14 12 10 8 6 4 Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) Light current IL (mA) 16 16 Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Ta = 25C Light current IL (mA) Ta = -30C 2 Light Current vs. Collector-Emitter Voltage Characteristics (Typical) 18 Ta = 25C VCE = 10 V 18 Ambient temperature Ta (C) 20 Light Current vs. Forward Current Characteristics (Typical) 20 Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 2 Ambient temperature Ta (C) 100 d 80 60 40 20 0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C -0.5 -0.25 0 0.25 0.5 0.75 Distance d (mm) 1.0 120 IF = 20 mA VCE = 10 V Ta = 25C 100 Relative light current IL (%) 120 (Center of optical axis) Response time tr, tf (s) VCC = 5 V Ta = 25C Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (C) (Center of optical axis) Collector-Emitter voltage VCE (V) 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1128 Photomicrosensor (Transmissive) 87 Photomicrosensor (Transmissive) EE-SX1131 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot. PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. Dual-channel output. Absolute Maximum Ratings (Ta = 25C) Item Emitter Optical axis Detector Cross section AA Recommended Soldering Pattern Internal Circuit Ambient temperature Terminal No. Name A Anode NC K C E1 E2 Not connected. Cathode Collector Emitter 1 Emitter 2 Unless otherwise specified, the tolerances are 0.15 mm. Symbol Rated value Forward current IF 25 mA (see note 1) Pulse forward current IFP 100 mA (see note 2) Reverse voltage VR 5V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -30C to 85C Storage Tstg -40C to 90C Reflow soldering Tsol 240C (see note 3) Manual soldering Tsol 300C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.1 V typ., 1.3 V max. IF = 5 mA Reverse current IR 10 A max. VR = 5 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL1/IL2 50 A min., 150 A typ., 500 A max. IF = 5 mA, VCE = 5 V Dark current ID 100 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 A Peak spectral sensitivity wavelength P 900 nm typ. --- Rising time tr 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Falling time tf 10 s typ. VCC = 5 V, RL = 1 k, IL = 100 A Emitter Detector 88 EE-SX1131 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) IF = 10 mA IF = 5 mA Light current IL (mA) Dark Current vs. Ambient TemRelative Light Current vs. Ambient Temperature Characteristics (Typical) perature Characteristics (Typical) Collector-Emitter voltage VCE (V) IF = 5 mA VCE = 5 V Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) VCE = 10 V VCE = 2 V Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resistance Sensing Position Characteristics (Typical) Characteristics (Typical) VCC = 5 V Ta = 25C Ta = 25C VCE = 5 V Forward current IF (mA) Dark current ID (nA) Light current IL (mA) Ta = 25C Ta = 25C Forward voltage VF (V) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) IF = 5 mA VCE = 5 V Distance d (mm) Sensing Position Characteristics (Typical) Relative light current IL (%) Forward current IF (mA) Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 5 mA VCE = 5 V Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1131 Photomicrosensor (Transmissive) 89 Unit: mm (inch) Tape and Reel Reel 210.8 dia. 20.5 13 0.5 dia. 3302 dia. 801 dia. Product name Quantity Lot number 12.4+2 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part (40 mm min.) Parts mounted Pull-out direction Tape quantity 2,000 pcs./reel 90 EE-SX1131 Photomicrosensor (Transmissive) Leading part (400 mm min.) Empty (40 mm min.) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 216 to 220C Composition: Sn 3.5 Ag 0.75 Cu * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. Temperature 1 to 5C/s 1 to 5C/s 260C max. 255C max. 230C max. 150 to 180C 120 sec 10 sec max. 40 sec max. Time Manual soldering * * * * Use "Sn 60" (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60C for 24 hours or more Bulk: 80C for 4 hours or more EE-SX1131 Photomicrosensor (Transmissive) 91 Photomicrosensor (Transmissive) EE-SX1137 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 5-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Internal Circuit K C A E Terminal No. A K C E Name Anode Cathode Collector Emitter Dimensions 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 0.3 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. 3 mm max. Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 92 EE-SX1137 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) Light current IL (mA) Ta = 25C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Forward current IF (mA) Forward voltage VF (V) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25C VCE = 10 V Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark current ID (nA) Forward current IF (mA) Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1137 Photomicrosensor (Transmissive) 93 Photomicrosensor (Transmissive) EE-SX1140 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 14-mm-wide slot. * 16.3-mm-tall model with a deep slot. * PCB mounting type. Four, C0.3 Four, 0.8 3.20.1 dia. through-hole 3 Absolute Maximum Ratings (Ta = 25C) 5 Four, 0.8 Item 14 Emitter 23 0.2 A B 16.3 12.50.15 Optical axis Detector (13.5) 5.2 2.8 C A B Four, 0.5 4.50.5 K Four, 0.25 (2.5) Cross section AA A (2.5) Cross section BB (19.9) Ambient temperature Internal Circuit K C 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) A E Dimensions Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 1.5 1.5 E Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.4 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 94 EE-SX1140 Photomicrosensor (Transmissive) Engineering Data 150 100 30 50 20 10 -20 0 20 40 60 0 100 80 Ta = -30C Ta = 25C 40 Ta = 70C 30 20 10 0 0 Ambient temperature Ta (C) IF = 40 mA 7 IF = 30 mA 6 5 IF = 20 mA 4 3 IF = 10 mA 2 1 0 1 2 3 4 5 6 7 8 9 Response Time vs. Load Resistance Characteristics (Typical) 10,000 Relative light current IL (%) Response time tr, tf (s) VCC = 5 V Ta = 25C 1,000 tf 100 tr 1 0.01 0.1 1 1.2 1.4 1.6 6 4 2 0 1.8 0 10 1 Load resistance RL (k) 100 90 80 70 0 20 40 60 20 30 40 50 Dark Current vs. Ambient Temperature Characteristics (Typical) 10,000 -20 10 Forward current IF (mA) IF = 20 mA VCE = 5 V 110 60 -40 10 Collector-Emitter voltage VCE (V) 10 0.8 120 Relative light current IL (%) Light current IL (mA) 8 0.6 Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 50 mA Ta = 25C 9 0.4 8 Forward voltage VF (V) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) 10 0.2 1,000 Dark current ID (nA) 0 -40 Ta = 25C VCE = 10 V 50 80 100 VCE = 10 V 0 lx 100 10 1 0.1 0.01 0.001 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) d 80 60 40 20 0 -1.5 -0.75 0 0.75 1.5 2.25 Distance d (mm) 3 Relative light current IL (%) 40 10 Light current IL (mA) PC Forward current IF (mA) IF 50 Light Current vs. Forward Current Characteristics (Typical) 60 Collector dissipation PC (mW) 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input 0 t Output 90% 10% 0 Input t tf tr IL VCC Output RL EE-SX1140 Photomicrosensor (Transmissive) 95 Photomicrosensor (Transmissive) EE-SX1235A-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * Four, R0.5 (3) A (2) K, E (1) C 8 7.6 4 3.2 (Aperture width) 0.2 Post header 292250-3 (Tyco Electronics AMP) 8.5 5 Absolute Maximum Ratings (Ta = 25C) (11) 5 5 Item Optical axis (10.1) 12.6 A 5.6 8.9 0.5 (Aperture width) (5.8) 6 Snap-in mounting model. Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs. High resolution with a 0.5-mm-wide aperture. 5-mm-wide slot. Connects to Tyco Electronics AMP's CT-series connectors. 0.8 (see note) Emitter (4.6) -0.1 (1.2) 3.3 1.1+0.1 -0.05 1.1 +0.1 -0.05 1.3 -+0.1 0.05 0.05 1.7 -+0.15 +0.1 -0.15 17 Internal Circuit 6 +0.1 3.5 -0.2 5.8 +0.1 -0.2 7.3 +0.1 -0.2 (10) 0.7 +0.15 Detector Note: The asterisked dimension is specified by datum A only. Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. Terminal No. Name A C Anode Collector K, E Cathode, Emitter Ambient temperature Tolerance 0.3 Rated value IF 50 mA (see note) Pulse forward current IFP --- A 7.6 +1 -0.3 3 0.2 5.8 +0.1 -0.2 7.3 +0.1 -0.2 Symbol Forward current Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note) Operating Topr -25C to 95C Storage Tstg -40C to 100C Tsol --- 3 < mm 6 0.375 Soldering temperature 6 < mm 10 0.45 10 < mm 18 0.55 Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. 18 < mm 30 0.65 Recommended Mating Connectors: Tyco Electronics AMP 173977-3 (press-fit connector) 175778-3 (crimp connector) 179228-3 (crimp connector) Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 30 mA IF = 30 mA Light current IL 0.6 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.3 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 5 V Rising time tr 8 s typ. VCC = 5 V, RL = 100 , IL = 1 mA Falling time tf 8 s typ. VCC = 5 V, RL = 100 , IL = 1 mA Detector 96 EE-SX1235A-P2 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 10% 90% Input VCC Output GND Refer to EE-SX4235A-P2 on page 158. EE-SX1235A-P2 Photomicrosensor (Transmissive) 97 Photomicrosensor (Transmissive) EE-SX129 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-resolution model with a 0.2-mm-wide sensing aperture. * PCB mounting type. 1 +0.5 0 5 8 13 Absolute Maximum Ratings (Ta = 25C) 6 Item 0.5 min. 0.2 Part B 3 8 0.2 2.5 Optical axis 30.3 5 5 2.5 R2.5 A B Emitter 2 2.1+0.2 0 dia. A 2 holes Detector 13.42 0.25 0.5 9.20.3 0.8 1.940.2 E A C K E C A K Cross section AA Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Internal Circuit E A C K Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 10 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 98 EE-SX129 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) (Center of optical axis) -0.2 -0.1 0 0.1 0.2 Distance d (mm) 0.3 0.4 Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 40 mA Forward current IF (mA) Dark current ID (nA) IF = 50 mA Ta = 70C Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = -30C Relative light current IL (%) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output Input 90 % 10 % Vcc Output EE-SX129 Photomicrosensor (Transmissive) 99 Photomicrosensor (Transmissive) EE-SX138 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * Four, 0.1 taper General-purpose model with a 3.4-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Screw-mounting possible. Absolute Maximum Ratings (Ta = 25C) 23.8 Item Emitter Part A 2.1 x 0.5 Aperture 4.75 Four, R1.25 0.2 (Optical axis) Detector Four, 1 R Four, 0.25 Four, 0.5 2.540.2 7.60.3 14.3 13.6 Ambient temperature Internal Circuit A C A K C E Unless otherwise specified, the tolerances are as shown below. Dimensions K Name 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 Rated value IF Soldering temperature E Terminal No. Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 1.9 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 100 EE-SX138 Photomicrosensor (Transmissive) Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Ta = -30C Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C VCE = 10 V Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response time tr, tf (s) Load resistance RL (k) Relative light current IL (%) 120 VCC = 5 V Ta = 25C 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output Input 90 % 10 % Vcc Output EE-SX138 Photomicrosensor (Transmissive) 101 Photomicrosensor (Transmissive) EE-SX153 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * 0.5 EE-SX 153 6.2 6.4 JAPAN 13.6 2 0.3 3.40.2 0.2 Absolute Maximum Ratings (Ta = 25C) 2.1 A 3.2 Item 3.20.2dia. holes 10.2 3 3 6 0.5 Emitter 7.8 1.2 0.6 Four, 0.25 7.60.2 K C A E A Detector Four, 0.8 Four, 1.5 A C Two, 2.54 Cross section AA E Internal Circuit K Ambient temperature C Unless otherwise specified, the tolerances are as shown below. A E Terminal No. A K C E Name Anode Cathode Collector Emitter Symbol Dimensions IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Soldering temperature Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current 7.20.2 Two, R1 K General-purpose model with a 3.4-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. With a horizontal sensing aperture. Screw-mounting possible. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Emitter Detector 102 EE-SX153 Photomicrosensor (Transmissive) Engineering Data Ta = -30C Ta = 25C Ta = 70C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Dark current ID (nA) IF = 40 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Ambient temperature Ta (C) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 80 d 60 40 20 0 Load resistance RL (k) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx -0.5 -0.25 0 0.25 0.5 0.75 Distance d (mm) 1.0 Sensing Position Characteristics (Typical) 120 Relative light current IL (%) IF = 50 mA Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V (Center of optical axis) Ta = 25C Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 100 d 80 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX153 Photomicrosensor (Transmissive) 103 Photomicrosensor (Transmissive) EE-SX198 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 3-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 12.20.3 Absolute Maximum Ratings (Ta = 25C) 50.1 Item Four, C0.3 0.50.1 Emitter Optical axis 100.2 8.50.1 Two, C10.3 6.5+0.1 Detector 6.20.5 Four, 0.50.1 Four, 0.250.1 2.50.1 Cross section BB 9.20.3 Cross section AA Ambient temperature Internal Circuit K Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) C Soldering temperature A E Terminal No. A K C E Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Name Anode Cathode Collector Emitter Rated value Forward current Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 20 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 104 EE-SX198 Photomicrosensor (Transmissive) Engineering Data IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) Response Time Measurement Circuit Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Distance d (mm) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 30 mA Ta = 25C Dark current ID (nA) IF = 40 mA Ta = -30C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 50 mA Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Input Output 90 % 10 % Input Output EE-SX198 Photomicrosensor (Transmissive) 105 7Photomicrosensor (Transmissive) EE-SX199 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * 12.20.3 50.1 Absolute Maximum Ratings (Ta = 25C) Two, C10.3 Four, C0.3 0.50.1 General-purpose model with a 3-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. With a positioning boss. Item Optical axis Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) 100.2 8.50.1 6.50.1 6.20.5 Four, 0.250.1 Four, 0.50.1 Cross section BB Detector 2.50.1 9.20.3 0 Two, 0.7-0.1 dia. K C A E Cross section AA 4.3 Internal Circuit K C A E Ambient temperature Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Terminal No. Name A Anode K C E Cathode Collector Emitter Rated value Forward current Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 5 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 20 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 106 EE-SX199 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Load resistance RL (k) Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Distance d (mm) Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 40 mA Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 50 mA Ta = -30C Dark current ID (nA) Ta = 25C Ta = 25C VCE = 5 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX199 Photomicrosensor (Transmissive) 107 Photomicrosensor (Actuator Mounted) EE-SA102 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * An actuator can be attached. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 17 Absolute Maximum Ratings (Ta = 25C) Item 6 Emitter 0.50.1 13.5 Optical axis 11 Two, R1 6.20.5 Detector 2.5 Two, 0.7 Four, 0.25 1.250.1 Four, 0.5 Cross section AA Cross section BB Ambient temperature 50.1 Internal Circuit K C 0 Two, 0.7-0.1 dia. 1.8+0.1 -0.05dia. R3 0.4 3 Terminal No. Name A K C Anode Cathode Collector E Emitter 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature E Two, R0.2 0.5 Two, R0.2 Rated value IF 60 Two, R0.2 A Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Part C Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 30 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 108 EE-SA102 Photomicrosensor (Actuator Mounted) Engineering Data Ta = 25C Ta = 70C IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Ambient temperature Ta (C) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Load resistance RL (k) Response Time Measurement Circuit VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (C) Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 40 mA Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) IF = 50 mA Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C VCE = 10 V Light current IL (mA) Ta = -30C Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 Distance d (mm) 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Actuator Dimensions Input Output 2.50.2 dia. 90 % 10 % 0 1.6-0.1 dia. Input 13.70.1 170.2 Output Note: 1. Make sure that the portions marked with dotted lines have no burrs. 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA102 Photomicrosensor (Actuator Mounted) 109 Photomicrosensor (Actuator Mounted) EE-SA104 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * An actuator can be attached. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 10.08 9 60.15 1.6+0.05 0 dia. Absolute Maximum Ratings (Ta = 25C) Item 0.30.1 0.30.1 Part C 0.30.1 0.30.1 Emitter Optical axis 9.31 0.25 max. 6.750.2 Detector 4.4 0.70.1 1.2+0.05 0 dia. Four, 0.25 Four, 0.5 Ambient temperature Cross section AA Cross section BB Internal Circuit K Unless otherwise specified, the tolerances are as shown below. A E Terminal No. Name A Anode K C E Cathode Collector Emitter 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature C Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF Two, 0.5 Four, C0.3 9.7 0.3 max. Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 110 EE-SA104 Photomicrosensor (Actuator Mounted) Engineering Data Ambient temperature Ta (C) Ta = 25C Ta = 70C IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) VCE = 10 V 0 lx Dark current ID (nA) IF = 30 mA Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Sensing Position Characteristics (Typical) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) 120 80 Response Time Measurement Circuit Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) IF = 40 mA VCC = 5 V Ta = 25C Light current IL (mA) Ta = -30C Forward voltage VF (V) IF = 50 mA Light current IL (mA) Ta = 25C VCE = 10 V Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Actuator Dimensions Input Output 2.20.1 dia. 90 % 10 % 0 1.5-0.1 dia. Input Output Note: 1. Make sure that the portions marked with dotted lines have no burrs. 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA104 Photomicrosensor (Actuator Mounted) 111 Photomicrosensor (Actuator) EE-SA105 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Model has an actuator. * Low operating force (0.15 N (15 gf)). * Connects to circuits with ease. Absolute Maximum Ratings (Ta = 25C) Item R0.6 1.4 dia. 1.4 Emitter Actuator 14.20.3 6.2 8.2 Detector Collector mark 91 Four, 0.5 Four, 0.25 6.80.5 2.5 Ambient temperature Internal Circuit K C A E Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.3 Terminal No. A K C Name Anode Cathode Collector 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 E Emitter 18 < mm 30 0.65 Symbol Rated value Forward current IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 70C Storage Tstg -40C to 100C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Forward voltage Value Condition VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min. IF = 20 mA, VCE = 5 V at free position (FP) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 10 A max. IF = 20 mA, VCE = 5 V at operating position (OP) Collector-Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V Peak spectral sensitivity wave- P length Rising time tr --- --- Falling time tf --- --- Mechanical Characteristics Actuator operation (IF = 20 mA, VCE = 5 V) (see note 1) Free position (FP): 14.20.3 mm Operating position (OP): 13.0 mm min. Total travel position (TTP): 12.1 mm max. Operating force (see note 2) 0.15 N (15 gf) max. Mechanical life expectancy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.) 112 EE-SA105 Photomicrosensor (Actuator) Note: 1. Free position (FP): The distance between the bottom of the housing to the top of the actuator without any external force imposed on the actuator. Operating position (OP): The distance between the bottom of the housing to the top of the actuator when the actuator is pressed and the IL becomes ILEAK or less. Total travel position (TTP): The distance between the bottom of the housing to the top of the actuator when the actuator is fully pressed. 2. Operating force: The force required to press the actuator from its FP to OP. Engineering Data Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Relative light current IL (%) Light current IL (mA) IF = 40 mA Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = -30C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C VCE = 10 V Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Relative light current IL (%) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C d (FP point: 0 mm) Distance d (mm) EE-SA105 Photomicrosensor (Actuator) 113 Photomicrosensor (Actuator) EE-SA113 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Model has an actuator. * Low operating force (0.15 N (15 gf)). * Connects to circuits with ease. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Internal Circuit K C A E Terminal No. A K C E 0.3 Name 3 < mm 6 0.375 Anode Cathode Collector Emitter 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 70C Storage Tstg -40C to 85C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Forward voltage Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min. IF = 20 mA, VCE = 5 V at free position (FP) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 10 A max. IF = 20 mA, VCE = 5 V at operating position (OP) Collector-Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr --- --- Falling time tf --- --- Mechanical Characteristics Actuator operation (IF = 20 mA, VCE = 5 V) (see note 1) Free position (FP): 11.40.3 mm Operating position (OP): 10.2 mm min. Total travel position (TTP): 9.3 mm max. Operating force (see note 2) 0.15 N (15 gf) max. Mechanical life expectancy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.) 114 EE-SA113 Photomicrosensor (Actuator) Note: 1. Free position (FP): Operating position (OP): The distance between the bottom of the housing to the top of the actuator without any external force imposed on the actuator. The distance between the bottom of the housing to the top of the actuator when the actuator is pressed and the IL becomes ILEAK or less. Total travel position (TTP): The distance between the bottom of the housing to the top of the actuator when the actuator is fully pressed. 2. Operating force: The force required to press the actuator from its FP to OP. Engineering Data Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Relative light current IL (%) Light current IL (mA) IF = 40 mA Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = -30C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C VCE = 10 V Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Relative light current IL (%) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25C d (FP point: 0 mm) Distance d (mm) EE-SA113 Photomicrosensor (Actuator) 115 Photomicrosensor (Transmissive) EE-SG3/EE-SG3-B Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Dust-proof model. * Solder terminal model (EE-SG3). * PCB terminal model (EE-SG3-B). Absolute Maximum Ratings (Ta = 25C) 13 190.1 25.40.2 Two, 3.20.2 dia. holes Item 3.60.2 Emitter Optical axis 1.2 Four, 0.5 Four, 0.25 7.620.3 0.8 Four, 1.5 2.54 0.6 Detector 2.540.3 Cross section AA Cross section AA Internal Circuit K C A Unless otherwise specified, the tolerances are as shown below. E Terminal No. A K C E Ambient temperature Name Anode Cathode Collector Emitter Dimensions 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Tolerance 3 mm max. Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 15 mA, VCE = 10 V IF = 30 mA Light current IL 2 mA min., 40 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 30 mA, IL = 1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 116 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) Engineering Data PC Ta = -30C Ta = 25C Ta = 70C Ta = 25C VCE = 10 V Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 25 mA IF = 20 mA IF = 15 mA IF = 10 mA Relative light current IL (%) Ta = 25C IF = 20 mA VCE = 5 V Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Dark current ID (nA) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Light current IL (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 5 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) Relative light current IL (%) 120 VCC = 5 V Ta = 25C -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 117 Photomicrosensor (Transmissive) EE-SH3 Series Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. * Solder terminal models: EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS * PCB terminal models: EE-SH3-B/-SH3-C/-SH3-D/-SH3-G Four, R1 Two, C1.5 6.2 190.15 25.4 Two, 3.20.2 dia. holes Matted Solder terminal Cross section AA Center mark 3.40.2 PCB terminal Cross section AA Absolute Maximum Ratings (Ta = 25C) Item Emitter 10.2 Four, 0.25 2.540.2 7.60.3 Detector Model Internal Circuit K C A Name A Anode K C E Cathode Collector Emitter 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Unless otherwise specified, the tolerances are as shown below. Dimensions E Terminal No. Aperture (a x b) Tolerance 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 Ambient temperature Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) 7.20.2 7.20.2 EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) Symbol Forward current Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value EE-SH3(-B) Emitter Detector EE-SH3-D(S) Condition EE-SH3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA typ. 1 to 28 mA typ. Dark current ID 2 nA typ., 200 nA max. Leakage current ILEAK --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity P wavelength 0.1 mA min. 0.5 to 14 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 lx --- --- 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA Rising time tr 4 s typ. Falling time tf 4 s typ. 118 EE-SH3-C(S) EE-SH3 Series Photomicrosensor (Transmissive) Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) VCC = 5 V Ta = 25C IF = 20 mA VCE = 10 V Ta = 25C - d 0 + Center of optical axis Distance d (mm) Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Center of optical axis Sensing Position Characteristics (EE-SH3-C(S)) IF = 20 mA VCE = 10 V Ta = 25C VCE = 10 V 0 lx Ambient temperature Ta (C) Sensing Position Characteristics (EE-SH3(-B)) Distance d (mm) Relative light current IL (%) Relative light current IL (%) Sensing Position Characteristics (EE-SH3-G(S)) IF = 20 mA VCE = 5 V Sensing Position Characteristics (EE-SH3-D(S)) Load resistance RL (k) Ta = 25C VCE = 10 V Forward current IF (mA) Ambient temperature Ta (C) Relative light current IL (%) Response time tr, tf (s) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (EE-SH3(-B)) Ta = -30C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Center of optical axis Distance d (mm) Response Time Measurement Circuit Input Center of optical axis Output 90 % 10 % Input Output Distance d (mm) EE-SH3 Series Photomicrosensor (Transmissive) 119 Photomicrosensor (Transmissive) EE-SJ3 Series Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-resolution model with a 0.2-mm-wide sensing aperture, highsensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. 0.3 Center mark Absolute Maximum Ratings (Ta = 25C) 6.2 Item 0.2 Pulse forward current 10.2 7.20.2 Detector 6 Four, 0.5 Four, 0.25 7.60.3 Ambient temperature Model Internal Circuit K C Aperture (a x b) EE-SJ3-C EE-SJ3-D 2.1 x 1.0 2.1 x 0.2 EE-SJ3-G 0.5 x 2.1 Unless otherwise specified, the tolerances are as shown below. A E Terminal No. A K C E Name Anode Cathode Collector Emitter Dimensions Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 1 A (see note 2) IFP 4V Collector-Emit- VCEO ter voltage 30 V Emitter-Collec- VECO tor voltage --20 mA IC 100 mW (see note 1) Collector dissi- PC pation Cross section AA Rated value 50 mA (see note 1) Reverse voltage VR Collector current 2.540.2 Cross section BB Symbol Forward current IF Emitter Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value EE-SJ3-C Emitter Detector Condition EE-SJ3-G Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 1 to 28 mA typ. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity P wavelength 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA Rising time tr 4 s typ. Falling time tf 4 s typ. 120 EE-SJ3-D EE-SJ3 Series Photomicrosensor (Transmissive) Engineering Data Ta = 70C Light current IL (mA) Ta = 25C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Collector-Emitter voltage VCE (V) VCC = 5 V Ta = 25C Sensing Position Characteristics (EE-SJ3-D) Load resistance RL (k) Relative light current IL (%) Sensing Position Characteristics (EE-SJ3-C) IF = 20 mA VCE = 10 V Ta = 25C Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Center of optical axis VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Relative light current IL (%) Response time tr, tf (s) Response Time vs. Load Resistance Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (EE-SJ3-G) Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C VCE = 10 V Light current IL (mA) Ta = -30C Ta = 25C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Sensing Position Characteristics (EE-SJ3-G) Relative light current IL (%) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C - d 0 + Center of optical axis Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input Center of optical axis Output 90 % 10 % Input Output Distance d (mm) EE-SJ3 Series Photomicrosensor (Transmissive) 121 Photomicrosensor (Transmissive) EE-SJ5-B Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 5-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 15.4 Absolute Maximum Ratings (Ta = 25C) 2.1 x 0.5 Aperture holes (see note) 50.2 Item Emitter Optical axis 7.20.2 Detector Four, 0.25 9.20.3 Four, 0.5 2.540.2 Cross section AA Note: There is no difference in size between the slot on the emitter and that on the detector. Internal Circuit K C A E Terminal No. Name A K C Anode Cathode Collector E Emitter 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Ambient temperature Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA IF = 20 mA, VCE = 10 V IF = 30 mA Light current IL 0.5 mA min., 14 mA max. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 122 EE-SJ5-B Photomicrosensor (Transmissive) Engineering Data IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Light current IL (mA) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Forward current IF (mA) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 30 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Ta = 25C Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 50 mA Ta = -30C Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C Ta = 25C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SJ5-B Photomicrosensor (Transmissive) 123 Photomicrosensor (Transmissive) EE-SJ8-B Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * 18-mm-tall model with a deep slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 0.3 6.5 0.5 Item 20 2.1 C-1 8 0.5 B Absolute Maximum Ratings (Ta = 25C) 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- 1.2 Collector current IC 20 mA 1.2 Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) 0.5 A Emitter 2.1 180.2 3.5 B A 4 Detector Four, 0.5 Four, 0.25 1.94 13.90.3 Cross section BB 0.8 Cross section AA 0.8 C K 3.2 A E (11.9) Ambient temperature Internal Circuit K C A E Terminal No. Name A K C Anode Cathode Collector E Emitter Rated value IF 150.2 3 min. Symbol Forward current 0.2 Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.05 mA min., 5 mA max. IF = 20 mA, VCE = 10 V IF = 30 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 124 EE-SJ8-B Photomicrosensor (Transmissive) Engineering Data 100 30 50 20 10 -20 0 20 40 60 0 100 80 Ta = -30C 40 Ta = 25C Ta = 70C 30 20 10 0 0 0.2 Ambient temperature Ta (C) Relative light current IL (%) Light current IL (mA) IF = 50 mA 0.7 IF = 40 mA 0.6 0.5 IF = 30 mA 0.4 IF = 20 mA 0.3 0.2 IF = 10 mA 0.1 0 0 1 2 3 4 5 6 7 8 9 1 1.2 0.4 0.2 0 0 10 100 tr 10 1 Load resistance RL (k) 10,000 90 80 70 40 50 VCE = 10 V 0 lx 1,000 100 10 1 0.1 0.01 -20 0 20 40 60 80 0.001 -30 -20 -10 0 100 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) d 80 60 40 20 0 -0.5 -0.25 0 0.25 0.5 0.75 Distance d (mm) 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) tf 30 Dark Current vs. Ambient Temperature Characteristics (Typical) 100 120 1,000 20 Forward current IF (mA) Ambient temperature Ta (C) VCC = 5 V Ta = 25C 0.1 0.6 1.8 110 10,000 1 0.01 1.6 IF = 20 mA VCE = 10 V Response Time vs. Load Resistance Characteristics (Typical) 10 1.4 Relative Light Current vs. Ambient Temperature Characteristics (Typical) 60 -40 10 Collector-Emitter voltage VCE (V) Response time tr, tf (s) 0.8 120 Ta = 25C 0.9 0.8 0.6 0.8 Forward voltage VF (V) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) 1 0.4 Dark current ID (nA) 0 -40 Ta = 25C VCE = 10 V 50 1.0 Sensing Position Characteristics (Typical) 120 Relative light current IL (%) 40 1 Light current IL (mA) PC Forward current IF (mA) IF 50 Collector dissipation PC (mW) Forward current IF (mA) 60 150 60 Light Current vs. Forward Current Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input 0 t 90 % 10 % Output 0 Input t tf tr IL VCC Output RL EE-SJ8-B Photomicrosensor (Transmissive) 125 Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. * Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS * PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G Center mark Absolute Maximum Ratings (Ta = 25C) Four, R1 Four, 0.25 Four, R1 Two, 3.20.2 dia. holes Four, 1.5 2.540.2 2.540.2 Detector Cross section AA Model K Four, 0.5 Two, 3.20.2 dia. holes Cross section AA EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Internal Circuit Emitter Aperture (a x b) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Terminal No. Name A Anode K C E Cathode Collector Emitter Dimensions Tolerance 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipa- PC tion 100 mW (see note 1) Topr -25C to 85C Storage Tstg -30C to 100C Soldering temperature Tsol 260C (see note 3) Unless otherwise specified, the tolerances are as shown below. E Symbol Rated value Forward current Ambient tem- Operating perature C A Item Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value EE-SV3(-B) Emitter Detector EE-SV3-D(S) Condition EE-SV3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity P wavelength 1 to 28 mA 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA Rising time tr 4 s typ. Falling time tf 4 s typ. 126 EE-SV3-C(S) EE-SV3 Series Photomicrosensor (Transmissive) Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) VCC = 5 V Ta = 25C IF = 20 mA VCE = 10 V Ta = 25C - d 0 + Center of optical axis Distance d (mm) Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Center of optical axis Sensing Position Characteristics (EE-SV3-C(S)) IF = 20 mA VCE = 10 V Ta = 25C Center of optical axis VCE = 10 V 0 lx Ambient temperature Ta (C) Sensing Position Characteristics (EE-SV3(-B)) Distance d (mm) Relative light current IL (%) Relative light current IL (%) Sensing Position Characteristics (EE-SV3-G(S)) IF = 20 mA VCE = 5 V Sensing Position Characteristics (EE-SV3-D(S)) Load resistance RL (k) Ta = 25C VCE = 10 V Forward current IF (mA) Ambient temperature Ta (C) Relative light current IL (%) Response time tr, tf (s) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (EE-SV3(-B)) Ta = -30C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Center of optical axis Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Distance d (mm) EE-SV3 Series Photomicrosensor (Transmissive) 127 Photomicrosensor (Transmissive) EE-SX298 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * 12.20.3 Absolute Maximum Ratings (Ta = 25C) 50.1 Four, C0.3 0.50.1 Two, C10.3 Item Emitter Optical axis 100.2 8.50.1 6.50.1 6.20.5 Detector Four, 0.50.1 Four, 0.25+0.1 9.20.3 Cross section BB 2.50.1 Cross section AA Ambient temperature Internal Circuit K C A E Cathode Collector Emitter Symbol Rated value Forward current IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 35 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Terminal No. Name A Anode K C E General-purpose model with a 3-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. With a Photo-Darlington transistor as a detector element. Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 20 mA max. IF = 1 mA, VCE = 2 V Dark current ID 2 nA typ., 1,000 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.75 V typ., 1.0 V max. IF = 2 mA, IL = 0.5 mA Peak spectral sensitivity wavelength P 780 nm typ. VCE = 5 V Rising time tr 70 s typ. VCC = 5 V, RL = 100 , IL = 10 mA Falling time tf 70 s typ. VCC = 5 V, RL = 100 , IL = 10 mA Emitter Detector 128 EE-SX298 Photomicrosensor (Transmissive) Engineering Data IF = 2 mA IF = 1.5 mA IF = 1 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 1 mA VCE = 2 V Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Forward current IF (mA) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Sensing Position Characteristics (Typical) 120 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 2.5 mA Relative light current IL (%) Light current IL (mA) IF = 3 mA Ta = 70C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 3.5 mA Ta = -30C Ta = 25C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C VCE = 2 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX298 Photomicrosensor (Transmissive) 129 Photomicrosensor (Transmissive) EE-SX301/-SX401 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX301) * Light ON model (EE-SX401) Optical axis Center mark 3.40.2 Optical axis Optical axis Absolute Maximum Ratings (Ta = 25C) Item Emitter Symbol 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Five, 0.5 2.50.2 Five, 0.25 Cross section AA Cross section BB Detector Internal Circuit K V O A G Terminal No. Unless otherwise specified, the tolerances are as shown below. Dimensions Name Ambient temperature Tolerance A K Anode Cathode 3 mm max. 0.3 3 < mm 6 V Power supply (Vcc) 6 < mm 10 0.375 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF Forward current Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX301), IF = 8 mA (EE-SX401) Low-level output voltage VOL IF = 20 mA High-level output voltage VOH 15 V min. Vcc = 16 V, RL = 1 k, IF = 8 mA (EE-SX301), IF = 0 mA (EE-SX401) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Peak spectral sensitivity P wavelength LED current when output is OFF LED current when output is ON 130 EE-SX301/-SX401 Photomicrosensor (Transmissive) Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. 2. The value of the response frequency is measured by rotating the disk as shown below. 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX401. Input Output EE-SX301 2.1 mm 0.5 mm Input Output EE-SX401 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX401. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C VCE = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) Ta = 25C RL = 1 k IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) Ta = 70C Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 25C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX301/-SX401 Photomicrosensor (Transmissive) 131 Photomicrosensor (Transmissive) EE-SX305/-SX405 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX305) * Light ON model (EE-SX405) Optical axis Center mark Optical axis Optical axis Absolute Maximum Ratings (Ta = 25C) 100.2 Item Emitter Five, 0.25 2.50.2 Five, 0.25 Cross section BB Detector Cross section AA Internal Circuit K V O A G Terminal No. Dimensions Ambient temperature A K Anode Cathode 3 mm max. 0.3 V Power supply (Vcc) 3 < mm 6 0.375 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Tolerance Rated value IF Permissible output POUT dissipation Unless otherwise specified, the tolerances are as shown below. Name Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX305), IF = 8 mA (EE-SX405) Forward voltage Low-level output voltage VOL High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 8 mA (EE-SX305), IF = 0 mA (EE-SX405) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Peak spectral sensitivity P wavelength LED current when output is OFF LED current when output is ON 132 EE-SX305/-SX405 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX405. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX305 EE-SX405 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX405. IFT OFF (IFT ON) IFT ON (IFT OFF) Ta = 70C Low-level Output Voltage vs. Output Current (Typical) Current consumption Icc (mA) Response delay time tPHL, tPLH (s) Supply voltage VCC (V) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) IFT ON (IFT OFF) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response Delay Time vs. Forward Current (Typical) IFT OFF (IFT ON) Low-level Output Voltage vs. Ambient Temperature Characteristic (Typical) Ta = 25C VCE = 5 V IF = 0 mA (15 mA) Current Consumption vs. Supply Voltage (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Ta = 25C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX305/-SX405 Photomicrosensor (Transmissive) 133 Photomicrosensor (Transmissive) EE-SX3070/-SX4070 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX3070) * Light ON model (EE-SX4070) Two, C1 Optical axis Absolute Maximum Ratings (Ta = 25C) Two, 0.7 Item Emitter Five, 0.25 (13.8) Five, 0.5 (1.25) Detector Two, 0.70.1 dia. K O A G Terminal No. 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output POUT dissipation V Unless otherwise specified, the tolerances are as shown below. Name Dimensions Ambient temperature A K Anode Cathode 3 mm max. 0.3 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Tolerance Rated value IF (1.25) 2.350.1 Internal Circuit Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3070), IF = 10 mA (EE-SX4070) Forward voltage Low-level output voltage VOL High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 10 mA (EE-SX3070), IF = 0 mA (EE-SX4070) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V Peak spectral sensitivity P wavelength 870 nm typ. VCC = 4.5 to 16 V IFT 10 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3) LED current when output is OFF LED current when output is ON 134 EE-SX3070/-SX4070 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX4070. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX3070 EE-SX4070 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX4070. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) Ta = 70C Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 25C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX3070/-SX4070 Photomicrosensor (Transmissive) 135 Photomicrosensor (Transmissive) EE-SX3081/-SX4081 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX3081) * Light ON model (EE-SX4081) Four, C0.3 50.1 13.7+0.3 Two, C10.3 2.50.2 7.50.2 100.2 8.50.1 Optical axis Absolute Maximum Ratings (Ta = 25C) 6.50.1 2.5+0.1 Item 6.20.5 8.20.5 Emitter Five, 0.250.1 (Five, 0.50.1) Cross section AA (10.5) (2.5) Detector Cross section BB Internal Circuit K V O A G Unless otherwise specified, the tolerances are as shown below. Ambient temperature Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Tolerance Terminal No. A Name Anode 3 mm max. 0.3 K Cathode 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Rated value 50 mA (see note 1) Soldering temperature Dimensions Symbol IF Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3081), IF = 8 mA (EE-SX4081) High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 8 mA (EE-SX3081), IF = 0 mA (EE-SX4081) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3) Emitter Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 136 EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX4081. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX3081 EE-SX4081 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX4081. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 70C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C Ta = 25C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 137 Photomicrosensor (Transmissive) EE-SX3088/-SX4088 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX3088) * Light ON model (EE-SX4088) * OMRON's XK8-series Connectors can be connected to the lead wires without a PCB. Contact your OMRON representative for information on obtaining XK8-series Connectors. 250.2 190.15 Two, R1 Two, 3.20.2 dia. holes Four, C0.3 Two, C2 0.50.1 0.50.1 Optical axis Absolute Maximum Ratings (Ta = 25C) 8.40.1 Item Four, 0.25 Emitter 3.50.4 Symbol IF 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Four, 0.5 Cross section BB Cross section AA Detector Internal Circuit K V Permissible output POUT dissipation O A G Terminal No. Unless otherwise specified, the tolerances are as shown below. Dimensions Name Ambient temperature Tolerance A K Anode Cathode 3 mm max. 0.3 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3088), IF = 5 mA (EE-SX4088) High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 5 mA (EE-SX3088), IF = 0 mA (EE-SX4088) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm VCC = 4.5 to 16 V IFT 2 mA typ., 5 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Emitter Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 138 EE-SX3088/-SX4088 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX4088. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX3088 EE-SX4088 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX4088. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 70C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C Ta = 25C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX3088/-SX4088 Photomicrosensor (Transmissive) 139 Photo IC Output Photomicrosensor (Transmissive) EE-SX3133 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Side-slit model and Dark ON model. * OMRON's XK8-series Connectors can be connected to the lead wires without a PCB. Contact your OMRON representative for information on obtaining XK8-series Connectors. 40.2 0.2 +0.2 -0.1 0.2 +0.2 -0.1 220.3 180.1 13.40.3 B A 50.2 20.1 (C1) 20.1 3.7 7.750.1 (8) 8.250.1 0.3 4 10.7 Absolute Maximum Ratings (Ta = 25C) Two, 2.50.1 dia. holes Cross section AA K Item Cross section BB Emitter V O G A Detector Internal Circuit K V O G A Terminal No. Unless otherwise specified, the tolerances are as shown below. Name Dimensions 3 mm max. 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 O G Output (OUT) Ground (GND) Ambient temperature 0.3 Anode Cathode Rated value IF 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output POUT dissipation Tolerance A K Symbol Forward current 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 8 mA Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm VCC = 4.5 to 16 V IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response delay time tPLH 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPHL 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Emitter Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 140 EE-SX3133 Photo IC Output Photomicrosensor (Transmissive) 2. The following illustrations show the definition of response delay time. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage. 0 0 Input t Output t tPLH tPHL Engineering Data 150 20 100 10 50 -20 0 20 40 60 0 100 80 50 6 Ta = -30C Ta = 25C 40 Ta = 70C 30 20 10 0 0 0.2 Ambient temperature Ta (C) LED Current vs. Ambient Temperature Characteristics (Typical) VCC = 5 V RL = 330 LED current IFT (mA) 6 IFT OFF 5 4 3 IFT ON 2 IF ICC VCC RL 1 OUT VOUT GND 0 -60 -40 -20 0 20 40 60 80 2.5 2 1.5 1 VCC RL OUT 0.5 VOUT GND 0 0 2 4 6 8 10 12 14 Supply voltage VCC (V) 1.4 1.6 16 IF VCC IOUT OUT GND 1 GND 4 3 IFT ON 2 1 0 1.8 0 2 4 6 10 100 IF ICC 0.18 IF 20 IF tPHL ICC t VCC RL OUT 10 VOUT OUT VOUT GND 0.14 0.12 IOL = 16 mA 0.1 0.08 0.06 0.04 IOL = 5 mA 0.02 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Repeat Sensing Position Characteristics (Typical) ON d1 = 0.01 mm IF ICC 5 10 15 20 25 d OUT VOUT GND tPLH 0 VCC RL GND 5 OFF 30 16 Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times tPHL 15 14 VCC = 5 V IF = 0 mA VCC t tPLH 25 12 Ambient temperature Ta (C) VOUT (EE-SX3@@) 30 10 RL 0.16 VCC = 5 V RL = 330 Ta = 25C 35 0 8 Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Response Delay Time vs. Forward Current (Typical) 40 VCC OUT VOUT IFT OFF 0.2 0.01 0.001 ICC RL 5 Supply voltage VCC (V) 0.1 Response delay time tPHL, tPLH (s) Current consumption Icc (mA) 3 ICC 1.2 Output current IC (mA) Ta = 25C IF = 0 mA IF 1 Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Current Consumption vs. Supply Voltage (Typical) 3.5 0.8 1 Ambient temperature Ta (C) 4 0.6 Low-level Output Voltage vs. Output Current (Typical) Low level output voltage VOL (V) 7 0.4 Ta = 25C RL = 1 k Forward voltage VF (V) Output transistor 0 -40 7 35 Forward current IF (mA) 40 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 Center of optical axis 30 60 LED current IFT (mA) 200 40 LED Current vs. Supply Voltage (Typical) Low level output voltage VOL (V) 250 50 Forward current IF (mA) 300 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Output allowable dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 0.6 Distance d (mm) EE-SX3133 Photo IC Output Photomicrosensor (Transmissive) 141 Photo IC Output Photomicrosensor (Transmissive) EE-SX338 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Side-slit model. * Dark ON model. 26.4 20.40.1 Two, 3.20.2 dia. holes Two, C1.7 0.3 0.5 6.2 14.4 2.1 3.40.2 A B 4.20.3 0.50.1 6 1.25 10.2 Absolute Maximum Ratings (Ta = 25C) 0.50.1 Item Five, 0.5 Five, 0.25 Emitter 2.5 2 1.25 1.6 Cross section BB 30.13 1 A B 8 2.1 0.2 Cross section AA 9.50.5 V O G K A Detector Internal Circuit K V G Terminal No. Unless otherwise specified, the tolerances are as shown below. Name Dimensions Ambient temperature Tolerance A K Anode Cathode 3 mm max. 0.3 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output POUT dissipation O A Symbol Forward current 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 8 mA Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm VCC = 4.5 to 16 V IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Emitter Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 142 EE-SX338 Photo IC Output Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage. 2. The value of the response frequency is measured by rotating the disk as shown below. 0 0 Input t Output t tPLH 2.1 mm 0.5 mm tPHL Disk 0.5 mm Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) 250 40 200 30 150 20 100 50 -20 0 20 40 60 0 100 80 50 6 Ta = -30C Ta = 25C 40 Ta = 70C 30 20 10 0 0 Ambient temperature Ta (C) VCC = 5 V RL = 330 LED current IFT (mA) 6 IFT OFF 5 4 3 IFT ON 2 IF ICC VCC RL 1 OUT VOUT GND 0 -60 -40 -20 0 20 40 60 80 2.5 2 1.5 1 VCC RL OUT 0.5 VOUT GND 0 0 2 4 6 8 10 12 14 Supply voltage VCC (V) 1 1.2 1.4 1.6 16 ICC VCC RL OUT VOUT IFT OFF GND 4 3 IFT ON 2 0 1.8 VCC IOUT OUT GND 10 100 VCC = 5 V RL = 330 Ta = 25C 35 IF 30 VOUT (EE-SX3@@) 25 20 t tPLH tPHL t tPHL 15 IF ICC VCC RL OUT 10 4 6 IF ICC OUT 0.16 5 10 15 20 25 14 VOUT GND 0.12 IOL = 16 mA 0.1 0.08 0.06 0.04 IOL = 5 mA 0.02 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Repeat Sensing Position Characteristics (Typical) Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times ON d1 = 0.01 mm IF ICC VCC RL d GND OFF 30 16 0.14 OUT VOUT tPLH 0 12 VCC = 5 V IF = 0 mA (15 mA) VCC RL GND 0 10 0.2 0.18 VOUT 5 8 Ambient temperature Ta (C) Response Delay Time vs. Forward Current (Typical) 40 2 Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Ta = 25C VCC = 5 V IF = 0 mA 1 0 Supply voltage VCC (V) 0.01 Response delay time tPHL, tPLH (s) Current consumption Icc (mA) 3 ICC 0.8 Output current IC (mA) Ta = 25C IF = 0 mA IF 0.6 0.1 0.001 Current Consumption vs. Supply Voltage (Typical) 4 0.4 1 Ambient temperature Ta (C) 3.5 0.2 Low-level Output Voltage vs. Output Current (Typical) Low level output voltage VOL (V) 7 IF 5 Forward voltage VF (V) LED Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C RL = 1 k 1 Output transistor 0 -40 7 Low level output voltage VOL (V) 10 60 35 Forward current IF (mA) 40 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 Center of optical axis 50 LED Current vs. Supply Voltage (Typical) LED current IFT (mA) 300 Forward current IF (mA) 60 Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating 0.6 Distance d (mm) EE-SX338 Photo IC Output Photomicrosensor (Transmissive) 143 Photomicrosensor (Transmissive) EE-SX384/-SX484 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX384) * Light ON model (EE-SX484) 0.5 0.5 5.5 5.5 8 Item 7 min. Five, 0.25 Five, 0.5 Emitter Cross section AA Cross section BB Detector Internal Circuit K 0 Ambient temperature G 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Operating Topr -40C to 75C Tstg -40C to 85C Tsol 260C (see note 2) Name A K Anode Cathode V Power supply (Vcc) O G Output (OUT) Ground (GND) 250 mW (see note 1) Storage Soldering temperature Terminal No. Rated value IF Permissible output POUT dissipation V A Symbol Forward current 2.5 1.25 1.25 Absolute Maximum Ratings (Ta = 25C) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX384), IF = 8 mA (EE-SX484) High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 8 mA (EE-SX384), IF = 0 mA (EE-SX484) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Emitter Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 144 EE-SX384/-SX484 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX484. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX384 EE-SX484 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX484. IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) Current consumption Icc (mA) Response delay time tPHL, tPLH (s) Supply voltage VCC (V) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Current Consumption vs. Supply Voltage (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Ta = 25C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Ta = 70C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C Ta = 25C LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX384/-SX484 Photomicrosensor (Transmissive) 145 Photomicrosensor (Transmissive) EE-SX493 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * Allows highly precise sensing with a 0.2-mm-wide sensing aperture. 6 0.2 9.5 Absolute Maximum Ratings (Ta = 25C) 6.50.05 Item 6.90.5 (1.25) Pull-off taper: 1/25 max. Five, 0.25 Five, 0.5 (1.25) Emitter Detector 0.750.1 Cross section AA Cross section BB K 0 Two, 1 -0.2 dia. (Tip dimension) 70.1 Internal Circuit O G Terminal No. Ambient temperature Unless otherwise specified, the tolerances are as shown below. Name Dimensions 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Anode 3 mm max. 0.125 K Cathode 3 < mm 6 0.150 V Power supply (Vcc) 6 < mm 10 0.180 O Output (OUT) 10 < mm 18 0.215 G Ground (GND) 18 < mm 30 0.260 250 mW (see note 1) Operating Topr -40C to 60C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Tolerance A Rated value IF Permissible output POUT dissipation V A Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V 940 nm typ. IF = 20 mA VCC = 4.5 to 16 V, IOL = 16 mA, IF = 15 mA Peak emission wavelength P Low-level output voltage VOL 0.12 V typ., 0.4 V max. High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 0 mA Current consumption ICC 5 mA typ., 10 mA max. VCC = 16 V Peak spectral sensitivity wavelength P 870 nm typ. VCC = 4.5 to 16 V IFT 10 mA typ., 15 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Detector LED current when output is OFF LED current when output is ON 146 EE-SX493 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.2 mm 0.2 mm Disk Engineering Data VCC = 5 V RL = 330 IFT OFF Ta = 70C Supply voltage VCC (V) Ta = 25C RL = 1 k IFT OFF Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C VCC = 5 V IF = 15 mA VCC = 5 V IF = 15 mA IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Output current IC (mA) Response Delay Time vs. Forward Current (Typical) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 15 mA IFT ON Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) LED current IFT (mA) Forward current IF (mA) Ta = -30C Ta = 25C Low level output voltage VOL (V) IFT ON LED Current vs. Supply Voltage (Typical) Repeat Sensing Position Characteristics (Typical) 40 VCC = 5 V RL = 330 35 IF 30 VOUT (EE-SX4@@) 25 20 t tPHL Output transistor LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating t tPLH tPHL (tPLH) 15 IF ICC VCC RL OUT VOUT 10 Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm GND 5 0 tPLH (tPHL) 0 5 10 15 20 25 30 35 Forward current IF (mA) 40 Distance d (mm) EE-SX493 Photomicrosensor (Transmissive) 147 Photomicrosensor (Transmissive) EE-SX398/498 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * High resolution with a 0.5-mm-wide sensing aperture. * Dark ON model (EE-SX398) * Light ON model (EE-SX498) 12.20.3 Four, C0.3 0.50.1 Optical axis 100.2 8.50.5 Two, C10.3 Absolute Maximum Ratings (Ta = 25C) 6.50.1 Item Emitter 6.20.5 8.20.5 Five, 0.50.1 Five, 0.250.1 (2.5) (9.2) Cross section BB Detector Cross section AA Internal Circuit K O G Terminal No. Ambient temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Name 50 mA (see note 1) Reverse voltage VR 4V Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Anode 3 mm max. 0.3 K Cathode 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 2) Soldering temperature Tolerance A Rated value IF Permissible output POUT dissipation V A Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Symbol Value Condition VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX398), IF = 5 mA (EE-SX498) High-level output voltage VOH 15 V min. VCC = 16 V, RL = 1 k, IF = 5 mA (EE-SX398), IF = 0 mA (EE-SX498) Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 2 mA typ., 5 mA max. VCC = 4.5 to 16 V Hysteresis H 15% typ. VCC = 4.5 to 16 V (see note 1) Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2) Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3) Detector Peak spectral sensitivi- P ty wavelength LED current when output is OFF LED current when output is ON 148 EE-SX398/498 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX498. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.5 mm Input Output EE-SX398 EE-SX498 Disk 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX498. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) Response Delay Time vs. Forward Current (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SX3@@) VOUT (EE-SX4@@) Forward current IF (mA) Ta = 25C RL = 1 k IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Output current IC (mA) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) Ta = 70C Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 25C Low level output voltage VOL (V) LED current IFT (mA) VCC = 5 V RL = 330 Ta = -30C LED Current vs. Supply Voltage (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Repeat Sensing Position Characteristics (Typical) Output transistor LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 15 mA VCC = 5 V RL = 330 n = repeat 20 times d1 = 0.01 mm Center of optical axis Distance d (mm) EE-SX398/498 Photomicrosensor (Transmissive) 149 Photomicrosensor (Transmissive) EE-SX3009-P1/-SX4009-P1 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * 34 171825-3 (Tyco Electronics AMP) 230.2 Screw-mounting model. High resolution with a 0.5-mm-wide sensing aperture. With a 5-mm-wide groove. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's EI-series connectors. Absolute Maximum Ratings (Ta = 25C) 4.20.2 dia. hole 30.1 dia, depth: 2 Two, R1 Item 0.5 (Aperture width) Optical axis 10.5 7.5 4 0 -0.1 dia. Symbol Rated value Power supply voltage VCC 10 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -25C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Internal Circuit V O Unless otherwise specified, the tolerances are as shown below. G Terminal No. V O G Name Dimensions Power supply (Vcc) Output (OUT) Ground (GND) Tolerance 4 mm max. 0.2 4 < mm 16 0.3 16 < mm 63 0.5 Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) Electrical and Optical Characteristics (Ta = 25C, Vcc = 5 V 10%) Item Symbol Value Condition Current consumption ICC 30 mA max. With and without incident Low-level output voltage VOL 0.3 V max. IOUT = 16 mA Without incident (EE-SX3009-P1) With incident (EE-SX4009-P1) High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC With incident (EE-SX3009-P1) Without incident (EE-SX4009-P1), RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 150 0.5 mm t = 0.2 mm EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive) Engineering Data Note: The values in the parentheses apply to the EE-SX4009-P1. Sensing Position Characteristics (Typical) Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics VCC = 5 V, Ta = 25C RL = 47 k ON (OFF) Center of optical axis Light interrupting plate Output transistor d1 = 00.3 mm OFF (ON) Ambient temperature Ta (C) Distance d (mm) EE-1005 Connector 1,00020 (1) (2) No. (3) Name Model Quantity Maker 1 Receptacle housing 171822-3 1 Tyco Electronics AMP 2 Receptacle contact 170262-1 3 Tyco Electronics AMP 3 Lead wire UL1007 AWG24 3 Wiring Connector circuit no. Lead wire color Output when connected to EE-SX4009-P1/EE-SX3009-P1 1 Red VCC 2 Orange GND 3 Yellow OUT --- EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive) 151 Photomicrosensor (Transmissive) EE-SX4019-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * 4.20.2 dia. 175489-3 (Tyco Electronics AMP) 230.2 Screw-mounting model. High resolution with a 0.5-mm-wide sensing aperture. With a 5-mm-wide groove. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's CT-series connectors. Absolute Maximum Ratings (Ta = 25C) Two, R0.5 Item 38 0.5 (Aperture width) Center of optical axis Two, R1 0 4 -0.1 dia. O Dimensions G O G 7V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -20C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Unless otherwise specified, the tolerances are as shown below. V V Name Tolerance 3 mm max. 0.3 3 < mm 6 0.375 Power supply (Vcc) 6 < mm 10 0.45 Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Recommended Mating Connectors: Tyco Electronics AMP 179228-3 (crimp connector) 175778-3 (crimp connector) 173977-3 (press-fit connector) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V 10%) Item Symbol Value Condition Current consumption ICC 20 mA max. With and without incident Low-level output voltage VOL 0.3 V max. IOUT = 16 mA With incident High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC Without incident, RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 152 Rated value VCC Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Internal Circuit Terminal No. Symbol Power supply voltage 0.5 mm t = 0.2 mm EE-SX4019-P2 Photomicrosensor (Transmissive) Engineering Data Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics Sensing Position Characteristics (Typical) VCC = 5 V, Ta = 25C RL = 47 k OFF Center of optical axis Light interrupting plate Output transistor d1 = 00.3 mm ON Ambient temperature Ta (C) Distance d (mm) EE-SX4019-P2 Photomicrosensor (Transmissive) 153 Photomicrosensor (Transmissive) EE-SX4134 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact model. * Photo IC output model. * Operates at a VCC of 2.2 to 7 V. * PCB surface mounting type. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector V O K G Terminal No. A Name Anode K Cathode V Supply voltage (Vcc) O G Output (OUT) Ground (GND) 25 mA (see note 1) Reverse voltage VR 5V Supply voltage VCC 9V Output voltage VOUT 17 V Output current IOUT 8 mA Ambient Operating temperature Storage Internal Circuit Unless otherwise specified, the tolerances are 0.15 mm. Rated value IF Permissible output POUT dissipation Optical axis A Symbol Forward current 80 mW (see note 1) Topr -25C to 85C Tstg -40C to 90C Reflow soldering Tsol 230C (see note 2) Manual soldering Tsol 300C (see note 2) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 5 V Peak emission wavelength P 940 nm typ. IF = 20 mA Power supply voltage VCC 2.2 V min., 7 V max. --- Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 2.2 to 7 V, IOL = 8 mA, IF = 7 mA High-level output current IOH 10 A max. Vcc = 2.2 to 7 V, IF = 0 mA, VOUT = 17 V 2.8 mA typ., 4 mA max. Vcc = 7 V 870 mm typ. Vcc = 2.2 to 7 V Current consumption ICC Peak spectral sensitivity P wavelength LED current when output is ON IFT 2.0 mA typ., 3.5 mA max. VCC = 2.2 to 7 V Hysteresis H 21% typ. VCC = 2.2 to 7 V (see note 1) Response frequency f 3 kHz min. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 2) Response delay time tPHL 7 s typ. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3) Response delay time tPLH 18 s typ. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3) 154 EE-SX4134 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response delay time. Note: 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input 2. The value of the response frequency is measured by rotating the disk as shown below. Output Disk 2.1 mm 0.5 mm 0.5 mm Engineering Data Current consumption Icc (mA) Current Consumption vs. Supply Voltage (Typical) Ta = 25C IF = 0 mA Supply voltage VCC (V) Forward current IF (mA) LED current IFT (mA) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C VCC = 5 V IOL = 8 mA IF = 7 mA Output current IC (mA) Response Delay Time vs. Forward Current (Typical) 40 IF ICC Ta = 25C VCC = 5 V RL = 4.7 k VCC RL 35 OUT VOUT 30 GND 25 20 tPLH 15 INPUT IF 10 Ta = 25C RL = 4.7 k Supply voltage VCC (V) Low level output voltage VOL (V) Ambient temperature Ta (C) Ta = 70C t OUTPUT VCC = 5 V IF = 7 mA IOL = 8 mA IOL = 0.5 mA Ambient temperature Ta (C) Repeat Sensing Position Characteristics (Typical) Output transistor VCC = 5 V RL = 4.7 k Ta = -30C Ta = 25C Low level output voltage VOL (V) LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) LED Current vs. Supply Voltage (Typical) Forward voltage VF (V) Response delay time tPHL, tPLH (s) Ambient temperature Ta (C) Forward Current vs. Forward Voltage Characteristics (Typical) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C IF = 5 mA VCC = 5 V RL = 4.7 k n = repeat 20 times 0.01 t tPHL tPLH 5 tPHL 0 0 5 10 15 20 25 Forward current IF (mA) 30 Distance d (mm) EE-SX4134 Photomicrosensor (Transmissive) 155 Unit: mm (inch) Tape and Reel Reel 210.8 dia. 20.5 13 0.5 dia. 3302 dia. 801 dia. Product name Quantity Lot number 12.4 +2 0 18.4 max. Tape 1.5 dia. Tape configuration Parts mounted Terminating part (40 mm min.) Pull-out direction Leading part (400 mm min.) Empty (40 mm min.) Tape quantity 2,000 pcs./reel 156 EE-SX4134 Photomicrosensor (Transmissive) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 216 to 220C Composition: Sn 3.5 Ag 0.75 Cu * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. Temperature 1 to 5C/s 1 to 5C/s 260C max. 255C max. 230C max. 150 to 180C 120 sec 10 sec max. 40 sec max. Time Manual soldering * Use"Sn 60" (60% tin and 40% lead) or solder with silver content. * Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300C or below. * Solder each point for a maximum of three seconds. * After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60C for 24 hours or more Bulk: 80C for 4 hours or more EE-SX4134 Photomicrosensor (Transmissive) 157 Photomicrosensor (Transmissive) EE-SX4235A-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * * 292250-3 (Tyco Electronics AMP) Four, R0.5 7.60.2 Absolute Maximum Ratings (Ta = 25C) 0.5 (Aperture width) (1.2) Snap-in mounting model. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. High resolution with a 0.5-mm-wide sensing aperture. With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's CT-series connectors. Optical axis 3.2 (Aperture width) Item (see note) Note: The dimension is specified by datum A only. Symbol Rated value Power supply voltage VCC 7V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -25C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Internal Circuit O Dimensions G Terminal No. Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Unless otherwise specified, the tolerances are as shown below. V 3 mm max. Name V Power supply (Vcc) O G Output (OUT) Ground (GND) Tolerance 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Recommended Mating Connectors: Tyco Electronics AMP 179228-3 (crimp connector) 175778-3 (crimp connector) 173977-3 (press-fit connector) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V 10%) Item Symbol Value Condition Current consumption ICC 16.5 mA max. With and without incident Low-level output voltage VOL 0.35 V max. IOUT = 16 mA with incident High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 158 0.5 mm t = 0.2 mm EE-SX4235A-P2 Photomicrosensor (Transmissive) Engineering Data VCC = 5 V Ta = 25C RL = 47 k Center of optical axis Light interrupting plate Output transistor d1 = 00.3 mm d2 = 01.3 mm V = 5 V CC Ta = 25C RL = 47 k d OFF d2 ON -3 Ambient temperature Ta (C) Center of optical axis Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Output transistor Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics -2 -1 0 1 2 3 Distance d (mm) Distance d (mm) Recommended Mounting Holes 3.70.1 17.10.1 (for t =1.0,1.2,1.6) t = 1.0 mm t = 1.2 mm t = 1.6 mm * When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. * When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. * The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. * After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. * When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may fall out. EE-SX4235A-P2 Photomicrosensor (Transmissive) 159 Photomicrosensor (Transmissive) EE-SX3239-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * * Post header 292250-3 (Tyco Electronics AMP) (2.4), Aperture width Snap-in mounting model. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. High resolution with a 0.5-mm-wide sensing aperture. With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's CT-series connectors. Absolute Maximum Ratings (Ta = 25C) 0.5, Aperture width Item Rated value VCC 7V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -20C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Note: The asterisked dimension Note: Refer to the temperature rating chart if the ambient temperais specified by datum A ture exceeds 25C. only. Internal Circuit Unless otherwise specified, the tolerances are as shown below. V O Dimensions G Tolerance 3 mm max. 0.3 Name 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Terminal No. Symbol Power supply voltage Recommended Mating Connectors: Tyco Electronics AMP 175778-3 (crimp connector) 173977-3 (press-fit connector) 179228-3 (crimp connector) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V 10%) Item Symbol Value Condition Current consumption ICC 16.5 mA max. With and without incident Low-level output voltage VOL 0.35 V max. IOUT = 16 mA without incident (EE-SX3239-P2) High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC with incident (EE-SX3239-P2), RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 160 0.5 mm t = 0.2 mm EE-SX3239-P2 Photomicrosensor (Transmissive) Engineering Data VCC = 5 V Ta = 25C RL = 47 k Center of optical axis Light interrupting plate Output transistor d1 = 00.3 mm Sensing Position Characteristics (Typical) d2 = 01.1 mm VCC = 5 V Ta = 25C RL = 47 k Distance d (mm) d OFF d2 ON -3 Ambient temperature Ta (C) Center of optical axis Sensing Position Characteristics (Typical) Output transistor Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics -2 -1 0 1 2 3 Distance d (mm) Recommended Mounting Holes * When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. * When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. * The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. * After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. * When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may fall out. EE-SX3239-P2 Photomicrosensor (Transmissive) 161 Photomicrosensor (Transmissive) EE-SX460-P1 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * * 171826-3 (Tyco Electronics AMP) Optical axis Snap-in mounting model. Mounts to 0.8- to 1.6-mm-thick panels. High resolution (aperture width of 0.5 mm) With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's EI-series connectors. Absolute Maximum Ratings (Ta = 25C) 0.5 (Aperture width) Optical axis Two, R1 150.2 Item Symbol VCC 10 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -20C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Mounting face Internal Circuit V O G Terminal No. V O G Tolerance 3 mm max. 0.3 Name 3 < mm 6 0.375 Power supply (Vcc) 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Output (OUT) Ground (GND) Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Unless otherwise specified, the tolerances are as shown below. Dimensions Rated value Power supply voltage Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V10%) Item Symbol Value Condition Current consumption ICC 30 mA max. With and without incident Low-level output voltage VOL 0.3 V max. IOUT = 16 mA with incident High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 162 0.5 mm t = 0.2 mm EE-SX460-P1 Photomicrosensor (Transmissive) Engineering Data Light interrupting plate Center of optical axis Output transistor VCC = 5 V Ta = 25C RL = 47 k d2 = 01.1 mm VCC = 5 V Ta = 25C RL = 47 k d OFF d2 ON -3 Distance d (mm) Ambient temperature Ta (C) Center of optical axis d1 = 00.3 mm EE-1005 Connector -2 -1 0 1 2 3 Distance d (mm) 1,00020 (1) (2) No. Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Output transistor Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics (3) Name Model Quantity Wiring Maker 1 Receptacle 171822-3 housing 1 Tyco Electronics AMP 2 Receptacle 170262-1 contact 3 Tyco Electronics AMP 3 Lead wire 3 --- UL1007 AWG24 Connector circuit no. Lead wire color Output when connected to EE-SX460-P1 1 Red VCC 2 Orange OUT 3 Yellow GND Recommended Mounting Hole Dimensions and Mounting and Dismounting Method Dismounting by Hand Squeeze the mounting tabs as shown in the following illustration and press the mounting tabs upwards. Center of sensing slot Optical axis Sensor edge EE-SX460-P1 Sensor edge on connector side (2) The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick panels. Refer to the above mounting hole dimensions and open the mounting holes in the panel to which the Photomicrosensor will be mounted. Insert into the holes the Photomicrosensor's mounting portions with a force of three to five kilograms but do not press in the Photomicrosensor at one time. The Photomicrosensor can be easily mounted by inserting the mounting portions halfway and then slowly pressing the Photomicrosensor onto the panel. There are two ways to dismount the Photomicrosensor. Refer to the following. Dismounting with Screwdriver Press the mounting hooks of the Photomicrosensor with a flat-blade screwdriver as shown in the following illustration and pull up the Photomicrosensor. Panel (1) (1) Pressed mounting holes are ideal for mounting the Photomicrosensor. When mounting the Photomicrosensor to a panel that has pressed mounting holes for the Photomicrosensor, be sure to mount the Photomicrosensor on the pressing side of the panel, otherwise it may be difficult to mount the Photomicrosensor and an insertion force of five to six kilograms may be required. When mounting the Photomicrosensor to a panel that has mounting holes opened by pressing, make sure that the mounting holes have no burrs, otherwise the lock mechanism of the Photomicrosensor will not work perfectly. After mounting the Photomicrosensor to a panel, be sure to check if the lock mechanism is working perfectly. EE-SX460-P1 EE-SX460-P1 Flat-blade screwdriver (2) Flat-blade (2) screwdriver (1) (1) Mounting hook Panel Mounting hook This tapered portion must be on the lower side of the panel, other wise the Photomicrosensor will not be locked in. Panel Mounting tab EE-SX460-P1 Photomicrosensor (Transmissive) 163 Photomicrosensor (Transmissive) EE-SX461-P11 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP's EI-series connectors. Absolute Maximum Ratings (Ta = 25C) Item Two, R1 V Rated value VCC 7V 2 (Aperture width) Output voltage VOUT 28 V Optical axis Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -20C to 75C Tstg -40C to 85C Soldering temperature Tsol --- (15) Internal Circuit Symbol Power supply voltage Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Unless otherwise specified, the tolerances are as shown below. O G Dimensions 3 mm max. Terminal No. V Name Power supply (Vcc) O G Output (OUT) Ground (GND) 3 < mm 6 Tolerance 0.3 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V10%) Item Symbol Value Condition Current consumption ICC 35 mA max. Low-level output voltage VOL 0.3 V max. IOUT = 16 mA with incident High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 164 0.5 mm t = 0.2 mm EE-SX461-P11 Photomicrosensor (Transmissive) With and without incident Engineering Data Sensing Position Characteristics (Typical) VCC = 5 V Ta = 25C RL = 47 k Center of optical axis d2 = 01.1 mm Output transistor Light interrupting plate Center of optical axis d OFF d2 ON -3 Ambient temperature Ta (C) -2 -1 0 1 2 3 Distance d (mm) Distance d (mm) EE-1005 Connector 1,00020 (1) (2) No. Sensing Position Characteristics (Typical) VCC = 5 V Ta = 25C RL = 47 k d1 = 01.1 mm Output transistor Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics (3) Name Model Quantity Maker Wiring 1 Receptacle housing 171822-3 1 Tyco Electronics AMP 2 Receptacle contact 170262-1 3 Tyco Electronics AMP 1 Red 3 Lead wire UL1007 AWG24 3 --- 2 Orange OUT 3 Yellow GND Connector circuit no. Lead wire color Output when connected to EE-SX461-P11 VCC Recommended Mounting Hole Dimensions and Mounting and Dismounting Method Dismounting by Hand Squeeze the mounting tabs as shown in the following illustration and press the mounting tabs upwards. Optical axis Sensor edge (to post header) Center of sensing slot EE-SX461-P11 Sensor edge (2) The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick panels. Refer to the above mounting hole dimensions and open the mounting holes in the panel to which the Photomicrosensor will be mounted. Insert into the holes the Photomicrosensor's mounting portions with a force of three to five kilograms but do not press in the Photomicrosensor at one time. The Photomicrosensor can be easily mounted by inserting the mounting portions halfway and then slowly pressing the Photomicrosensor onto the panel. There are two ways to dismount the Photomicrosensor. Refer to the following. Dismounting with Screwdriver Press the mounting hooks of the Photomicrosensor with a flat-blade screwdriver as shown in the following illustration and pull up the Photomicrosensor. Panel (1) (1) Pressed mounting holes are ideal for mounting the Photomicrosensor. When mounting the Photomicrosensor to a panel that has pressed mounting holes for the Photomicrosensor, be sure to mount the Photomicrosensor on the pressing side of the panel, otherwise it may be difficult to mount the Photomicrosensor and an insertion force of five to six kilograms may be required. When mounting the Photomicrosensor to a panel that has mounting holes opened by pressing, make sure that the mounting holes have no burrs, otherwise the lock mechanism of the Photomicrosensor will not work perfectly. After mounting the Photomicrosensor to a panel, be sure to check if the lock mechanism is working perfectly. EE-SX461-P11 EE-SX461-P11 Flat-blade screwdriver (2) (2) (1) Mounting hook Flat-blade screwdriver (1) Panel Mounting hook This tapered portion must be on the lower side of the panel, otherwise the Photomicrosensor will not be locked in. Panel Mounting tab EE-SX461-P11 Photomicrosensor (Transmissive) 165 Photomicrosensor (Actuator Mounted) EE-SA407-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * * * * * * * 292250-3 (Tyco Electronics AMP) 0.5 (Aperture width) 2.2+0.1 0 dia. An actuator can be attached. Snap-in mounting model. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. High resolution with a 0.5-mm-wide sensing aperture. With a 3.6-mm-wide slot. Photo IC output signals directly connect with logic circuit and TTL. Connects to Tyco Electronics AMP's CT-series connectors. Absolute Maximum Ratings (Ta = 25C) Optical axis Item (see note) Note: The dimension is specified by datum A only. Internal Circuit 0 Dimensions G Terminal No. 3 mm max. Rated value VCC 7V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note) Ambient temper- Operating ature Storage Topr -20C to 75C Tstg -40C to 85C Soldering temperature Tsol --- Note: Refer to the temperature rating chart if the ambient temperature exceeds 25C. Unless otherwise specified, the tolerances are as shown below. V Symbol Power supply voltage Tolerance 0.3 Name 3 < mm 6 0.375 V Power supply (Vcc) 6 < mm 10 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Recommended Mating Connectors: Tyco Electronics AMP 179228-3 (crimp connector) 175778-3 (crimp connector) 173977-3 (press-fit connector) Electrical and Optical Characteristics (Ta = 25C, VCC = 5 V 10%) Item Symbol Value Condition Current consumption ICC 30 mA max. With and without incident Low-level output voltage VOL 0.35 V max. IOUT = 16 mA with incident High-level output voltage VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 k Response frequency f 3 kHz min. VOUT = VCC, RL = 47 k (see note) Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 166 0.5 mm t = 0.2 mm EE-SA407-P2 Photomicrosensor (Actuator Mounted) Engineering Data d2 = 01.1 mm VCC = 5 V Ta = 25C RL = 47 k Light interrupting plate Center of optical axis Output transistor d1 = 00.3 mm Sensing Position Characteristics (Typical) VCC = 5 V Ta = 25C RL = 47 k d OFF d2 ON -3 -2 -1 0 1 2 3 Distance d (mm) Distance d (mm) Ambient temperature Ta (C) Center of optical axis Sensing Position Characteristics (Typical) Output transistor Output allowable dissipation Pc (mW) Output Allowable Dissipation vs. Ambient Temperature Characteristics Recommended Mounting Holes 17.10.1 (for t =1.0,1.2,1.6) t = 1.0 mm t = 1.2 mm t = 1.6 mm * When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. * When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. * The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. * After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. * When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may come fall out. Actuator Dimensions 0 3 -0.2 dia. 20.1 dia. Note: 1. Make sure that the portions marked with dotted lines have no burrs. 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA407-P2 Photomicrosensor (Actuator Mounted) 167 Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier EE-SPX415-P2 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Separate LED/Photo IC combinations with 12-mm slot. * Uses light modulation via built-in amplifier IC. * Applicable to the PA connector series from JST (Japan Solderless Terminal). Absolute Maximum Ratings (Ta = 25C) Cross section D-D Cross section A-A Item Symbol Rated value Supply voltage Vcc 16 VDC Output voltage Vout 16 V Output current Iout 50 mA Operating temperature Topr -10C to 60C Storage temperature Tstg -40C to 80C Cross section C-C Cross section B-B B04B-PASK Japan Solderless Terminal (JST) Internal Circuit Unless otherwise specified, the tolerances are as shown below. Dimensions Terminal No. V O1 O2 G Name Power supply (Vcc) Vout1 (Optical axis 1) Vout2 (Optical axis 2) Ground (GND) Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 18 < mm 30 0.55 0.65 30 < mm 50 0.8 Recommended Mating Connectors JST (Japan Solderless Terminal) PAP-04V-S 168 EE-SPX415-P2 Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier Electrical and Optical Characteristics (Ta = 25C, Vcc = 12 V10%) Item Symbol Limits MIN. Unit TYP. Testing conditions MAX. Current consumption Icc --- --- 35 mA With/without object Low level output voltage VOL 0.01 0.2 0.4 V Iout = 20 mA without object High level output current IOH 0 --- 40 mA Vout = 12 V with object Ambient illumination --- 0 --- 3,000 lx Sunlight and fluorescent light Response frequency f 500 --- --- Hz Vcc0 = Vcc1 = Vcc2 = 12 VDC RL = 1.2 k (see note) Note: The value indicated is that measured by rotating the disk as shown below. Engineering Data Repetitive Sensing Position Characteristics for OUT2 (in horizontal direction, typical) Output transistor Output transistor Repetitive Sensing Position Characteristics for OUT1 (in horizontal direction, typical) Distance (mm) Distance (mm) EE-SPX415-P2 Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier 169 Photomicrosensor (Reflective) EE-SY110 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact reflective model with a molded housing. Absolute Maximum Ratings (Ta = 25C) Item Four, 0.5 Emitter Four, R1.5 Detector 15.20.2 Four, 0.25 Ambient temperature 15 to 18 Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -40C to 85C Storage Tstg -40C to 85C Tsol 260C (see note 3) Soldering temperature Internal Circuit A C K E Terminal No. Name A K Anode Cathode C E Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA VR = 4 V Reverse current IR 0.01 A typ., 10 A max. Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 200 A min., 2,000 A max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 10 V with no reflection --- --- P 850 nm typ. VCE = 10 V Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Detector Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 170 EE-SY110 Photomicrosensor (Reflective) Engineering Data Dark Current vs. Ambient Temperature Characteristics (Typical) Sensing Distance Characteristics (Typical) Light current IL (A) Sensing object: White paper with a reflection factor of 90% Distance d (mm) IF = 30 mA IF = 20 mA IF = 10 mA Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25C Load resistance RL (k) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current IL (%) Ta = 25C IF = 20 mA VCE = 10 V IF = 40 mA Collector-Emitter voltage VCE (V) IF = 20 mA VCE = 10 V Ta = 25C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Direction Distance d2 (mm) Sensing Angle Characteristics VCE = 10 V (Typical) IF = 20 mA Relative light current IL (%) Ambient temperature Ta (C) VCE = 10 V 0x Ta = 25C d = 5 mm Response time tr, tf (s) Dark current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Sensing object: White paper with a reflection factor of 90% Forward current IF (mA) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) d = 5 mm VCE = 10 V Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Light current IL (mA) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating d = 5 mm Sensing object: White paper with a reflection factor of 90% d Angle deviation () Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY110 Photomicrosensor (Reflective) 171 Photomicrosensor (Reflective) EE-SY113 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Compact reflective Photomicrosensor (EE-SY110) with a molded housing and a dust-tight cover. Absolute Maximum Ratings (Ta = 25C) Four, 0.5 Item Emitter Notch for directional discrimination 2.5 Detector Four, 0.25 15 to 18 Ambient temperature Internal Circuit A C K E 3 mm max. Terminal No. Name A Anode K C Cathode Collector E Emitter 0.3 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -40C to 80C Storage Tstg -40C to 85C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 < mm 6 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 160 A min., 1,600 A max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 10 V with no reflection --- --- 850 nm typ. VCE = 10 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 172 EE-SY113 Photomicrosensor (Reflective) Engineering Data VCE = 10 V d = 4.4 mm Light current IL (A) Sensing object: White paper with a reflection factor of 90% Distance d (mm) Sensing Position Characteristics (Typical) Relative light current IL (%) Ta = 25C IF = 20 mA VCE = 10 V Response time tr, tf (s) Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Distance Characteristics (Typical) VCE = 10 V 0x IF = 20 mA VCE = 10 V Ta = 25C d1 = 4.4 mm Sensing object: White paper with a reflection factor of 90% d1 d2 Direction Distance d2 (mm) IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25C Load resistance RL (k) Sensing Angle Characteristics (Typical) Relative light current IL (%) Relative light current IL (%) IF = 20 mA VCE = 5 V Dark current ID (nA) Dark Current vs. Ambient Temperature Characteristics (Typical) d = 4.4 mm Sensing object: White paper with a reflection factor of 90% Collector-Emitter voltage VCE (V) Forward current IF (mA) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25C VCE = 10 V IF = 20 mA d = 4.4 mm Sensing object: White paper with a reflection factor of 90% Angle deviation () Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY113 Photomicrosensor (Reflective) 173 Photomicrosensor (Reflective) EE-SY124 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact model. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Soldering temperature Internal Circuit K Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. C Unless otherwise specified, the tolerances are 0.15 mm. A E Terminal No. Rated value Forward current Name A K C Anode Cathode Collector E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 950 nm typ. IF = 4 mA Light current IL 50 A min., 300 A max. IF = 4 mA, VCE = 2 V Aluminum-deposited surface, d = 1 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 200 nA max. IF =4 mA, VCE = 2 V with no reflection --- --- 930 nm typ. VCE = 10 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 35 s typ. VCC = 2 V, RL = 1 k, IL = 100 A Falling time tf 25 s typ. VCC = 2 V, RL = 1 k, IL = 100 A Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 174 EE-SY124 Photomicrosensor (Reflective) Engineering Data Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 4 mA VCE = 2 V Dark Current ICEO (A) Relative light current IL (%) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (C) Sensing Distance Characteristics (Typical) TA = 25C IF = 4 mA VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Response time tr (s) Light current IL (A) Relative Collector Current vs. Card Moving Distance (2) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Ambient temperature Ta (C) Light current IL (A) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (A) Forward current IF (mA) Ambient temperature Ta (C) Ta = 25C d = 1 mm Sensing object: Aluminum-deposited surface Response time tr (s) IF Ta = 25C VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Distance d (mm) Relative Light Current vs. Card Moving Distance (1) Relative light current IL (%) PC Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Collector dissipation Pc (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Card moving distance L (mm) Response Time Measurement Circuit Relative light current IL (%) Input Output 90 % 10 % Input Output Card moving distance L (mm) EE-SY124 Photomicrosensor (Reflective) 175 Photomicrosensor (Reflective) EE-SY125 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact model. * PCB surface mounting type Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature A C K Unless otherwise specified, the tolerances are 0.15 mm. 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. E Name A Anode K C E Cathode Collector Emitter Rated value IF Soldering temperature Internal Circuit Terminal No. Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. IF = 20 mA VR = 4 V Reverse current IR 0.01 A typ., 10 A max. Peak emission wavelength P 950 nm typ. IF = 4 mA Light current IL 50 A min., 300 A max. IF = 4 mA, VCE = 2 V Aluminum-deposited surface, d = 1 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 200 nA max. IF =4 mA, VCE = 2 V with no reflection --- --- 930 nm typ. VCE = 10 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 35 s typ. VCC = 2 V, RL = 1 k, IL = 100 A Falling time tf 25 s typ. VCC = 2 V, RL = 1 k, IL = 100 A Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 176 EE-SY125 Photomicrosensor (Reflective) Engineering Data IF = 4 mA VCE = 2 V Dark Current vs. Ambient Temperature Characteristics (Typical) Dark Current ICEO (A) Relative light current IL (%) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Sensing Distance Characteristics (Typical) Response time tr (s) Light current IL (A) TA = 25C IF = 4 mA VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Light current IL (A) Relative light current IL (%) Relative Collector Current vs. Card Moving Distance (2) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (A) Forward current IF (mA) Ambient temperature Ta (C) Ta = 25C d = 1 mm Sensing object: Aluminum-deposited surface Response time tr (s) IF Ta = 25C VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Relative Light Current vs. Card Moving Distance (1) Relative light current IL (%) PC Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Collector dissipation Pc (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Card moving distance L (mm) Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Card moving distance L (mm) EE-SY125 Photomicrosensor (Reflective) 177 Packaging Specifications Packaging Green stopper Sleeve Sleeves (4 rows x 10 levels = 40 sleeves) Sensor Yellow stopper Label Outer box Packaging amount * Put a maximum of 50 Sensors into one sleeve. * Put a maximum of 2,000 Sensors (40 sleeves of 50 Sensors each) into one box. Packaging form * Stack 10 levels of Sensor-containing sleeves into 4 rows, seal them inside an aluminum laminate bag, then pack them into an outer box. * Close the lid of the outer box, and seal it with tape. Markings * Mark the outer box with the model number, lot number, and quantity of sensors. 178 EE-SY125 Photomicrosensor (Reflective) Precautions Soldering Information Reflow soldering * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 240C max. 200C 1 to 4C/s max. 60 sec. max. 1 to 4C/s max. 120 sec. max. 165C max. 90 sec. max. 1 to 4C/s Temperature 10 sec. max. Time Manual soldering * Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 260C or below. * Solder each point for a maximum of three seconds. * After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 5 to 30C Humidity: 70% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored at 5 to 25C at 60% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope at 5 to 30C at 70% maximum humidity within two weeks. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use only one time: Bulk:125C for 16 to 24 hours EE-SY125 Photomicrosensor (Reflective) 179 Photomicrosensor (Reflective) EE-SY169 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-quality model with plastic lenses. * Highly precise sensing range with a tolerance of 0.6 mm horizontally and vertically. * With a red LED sensing dyestuff-type inks. * Limited reflective model. * For lesser LED forward current the EE-SY169B would be a better choice. Absolute Maximum Ratings (Ta = 25C) Item Emitter Surface A 10.1 dia. Two, C0.2 10.1 dia. (see note) (see note) Internal Circuit A C K E Terminal No. Name A Anode K C E Cathode Collector Emitter Detector Note: These dimensions are for the surface A. Other lead wire pitch dimensions are for the housing surface. Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 < mm 6 6 < mm 10 10 < mm 18 0.3 0.375 0.45 0.55 18 < mm 30 0.65 3 mm max. Ambient temperature Symbol Rated value Forward current IF 40 mA (see note 1) Pulse forward current IFP 300 mA (see note 2) Reverse voltage VR 3V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr 0C to 70C Storage Tstg -20C to 80C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Forward voltage Symbol Value Condition VF 1.85 V typ., 2.3 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 3 V Peak emission wavelength P 660 nm typ. IF = 20 mA Light current IL 160 A min., 2,000 A max. IF = 20 mA, VCE = 5 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 5 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 5 V with no reflection Collector-Emitter saturated voltage VCE (sat) --- --- 850 nm typ. VCE = 5 V Peak spectral sensitivity wave- P length Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 180 EE-SY169 Photomicrosensor (Reflective) Engineering Data d = 4 mm VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Angle deviation () Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Response time tr, tf (s) Vcc = 5 V Ta = 25C IF = 20 mA VCE = 5 V Ta = 25C Sensing object: White paper with a reflection factor of 90% d1 = 3.5 mm d1 = 4.0 mm d1 = 4.5 mm Direction Sensor Load resistance RL (k) Sensing Position Characteristics (Typical) Distance d2 (mm) Sensing Angle Characteristics (Typical) Relative light current IL (%) Relative light current IL (%) d = 3 mm d = 4 mm d = 5 mm VCE = 10 V 0lx Sensing Position Characteristics (Typical) Distance d (mm) Sensing Angle Characteristics (Typical) IF = 10 mA Ambient temperature Ta (C) Relative light current IL (%) Light current IL (A) Ta = 25C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 20 mA Relative light current IL (%) Ambient temperature Ta (C) Sensing Distance Characteristics (Typical) IF = 40 mA IF = 30 mA Forward current IF (mA) Dark Current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Ta = 25C d = 4 mm Sensing object: White paper with a reflection factor of 90% IF = 5 mA Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (A) Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25 IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection fac tor of 90% IF = 20 mA VCE = 5 V Ta = 25C d1 = 4 mm Sensing object: White paper with a reflection factor of 90% Sensing d = 0 object Direction Sensor Distance d2 (mm) Response Time Measurement Circuit Input d = 3 mm d = 4 mm d = 5 mm Output 90 % 10 % Input Output Angle deviation () EE-SY169 Photomicrosensor (Reflective) 181 Photomicrosensor (Reflective) EE-SY169A Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-quality model with plastic lenses. * Highly precise sensing range with a tolerance of 0.6 mm horizontally and vertically. * Convergent reflective model with infrared LED. Absolute Maximum Ratings (Ta = 25C) Item Emitter Surface A 10.1 dia. Two, C0.2 10.1 dia. Detector (see note) (see note) Internal Circuit A C K E Note: These dimensions are for the surface A. Other lead wire pitch dimensions are for the housing surface. Unless otherwise specified, the tolerances are as shown below. Dimensions Terminal No. A K C E Ambient temperature Name 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 3V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr 0C to 70C Storage Tstg -20C to 80C Tsol 260C (see note 3) Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance Anode Cathode Collector Emitter Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.5 V max. IF = 30 mA Reverse current IR 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 160 A min., 2,000 A max. IF = 20 mA, VCE = 5 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 5 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 5 V with no reflection --- --- 850 nm typ. VCE = 5 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 182 EE-SY169A Photomicrosensor (Reflective) Engineering Data d = 4 mm VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (C) Sensing object: White paper with a reflection factor of 90% Sensing Position Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% Angle deviation () Sensing object: White IF = 20 mA paper with a reflection factor of 90% VCE = 5 V Ta = 25C d1 = 3.5 mm d1 = 4.0 mm d1 = 4.5 mm Direction Sensor Sensing Angle Characteristics (Typical) Relative light current IL (%) Relative light current IL (%) d = 3 mm Ta = 25C d = 4 mm IF = 20 mA d = 5 mm VCE = 10 V IF = 5 mA Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25C Load resistance RL (k) Sensing Position Characteristics (Typical) Ta = 25 IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 20 mA VCE = 5 V Ta = 25C d1 = 4 mm Sensing object: White paper with a reflection factor of 90% d=0 Direction Sensing object Sensor Distance d2 (mm) Distance d2 (mm) Distance d (mm) Sensing Angle Characteristics (Typical) IF = 10 mA Relative light current IL (%) Ta = 25C IF = 20 mA VCE = 10 V IF = 20 mA Ambient temperature Ta (C) Relative light current IL (%) Light current IL (A) Sensing Distance Characteristics (Typical) VCE = 10 V 0lx IF = 40 mA IF = 30 mA Response time tr, tf (s) Dark Current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Ta = 25C d = 4 mm Sensing object: White paper with a reflection factor of 90% Forward current IF (mA) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (A) Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating Response Time Measurement Circuit Input d = 3 mm d = 4 mm d = 5 mm Output 90 % 10 % Input Output Angle deviation () EE-SY169A Photomicrosensor (Reflective) 183 Photomicrosensor (Reflective) EE-SY169B Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-quality model with plastic lenses. * Highly precise sensing range with a tolerance of 0.6 mm horizontally and vertically. * With a red LED sensing dyestuff-type links. * Limited reflective model * Higher gain than EE-SY169. * Possible to get the same IL as EE-SY169 with IF=10 mA. (half of EE-SY169 condition) 3.2 0.5 60.3 2.5 1.8 12.50.3 Absolute Maximum Ratings (Ta = 25C) 80.3 Item Surface A 1 30.5 30.5 1 0.1 dia. (see note) 4.8 (see note) 9.20.5 0.5 3.2 70.1 A C K E 1 Emitter 3 2.5 A C K E Note: These dimensions are for the surface A. Other lead wire pitch dimensions are for the housing surface. Unless otherwise specified, the tolerances are as shown below. Dimensions Terminal No. A K C E Ambient temperature 40 mA (see note 1) Pulse forward current IFP 300 mA (see note 2) Reverse voltage VR 3V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr 0C to 70C Storage Tstg -20C to 80C Tsol 260C (see note 3) Soldering temperature Tolerance Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. 0.3 Name 3 mm max. Anode Cathode Collector Emitter 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value IF Two, C0.2 10.1 dia. Detector Internal Circuit Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.85 V typ., 2.3 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 3 V Peak emission wavelength P 660 nm typ. IF = 20 mA Light current IL 160 A min., 2,000 A max. IF = 10 mA, VCE = 5 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 5 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 5 V with no reflection --- --- 850 nm typ. VCE = 5 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 184 EE-SY169B Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Dissipation Temperature Rating 1,400 120 IF 40 80 30 60 20 40 10 20 0 -40 -20 0 20 40 60 1,000 800 600 400 200 0 0 100 80 10 0 90 80 70 0 20 40 60 80 100 Ambient temperature Ta (C) 200 100 0 1 2 3 4 5 6 7 8 9 Forward current IF (mA) 0.001 -30 -20 -10 0 IF = 10 mA VCE = 5 V Ta = 25C 100 140 120 100 80 60 40 20 Angle deviation () 20 10 15 20 25 30 tf tr 10 1 0.01 0.1 d2 40 Direction d1 Sen- Sensor sor 1 IF = 10 mA VCE = 5 V Ta = 25C d1 = 4 mm 100 60 0 Sensing Position Characteristics (Typical) 120 Sensing object: White paper with a reflection factor of 90% 20 2 3 4 5 105 Sensing object: White paper with a reflection factor of 90% Ta = 25 IF = 10 mA VCE = 10 V 6 Sensing object: White paper with a reflection factor of 90% 80 Sensing d = 0 object 60 d2 Direction 40 d1 Sensor 20 0 5 6 7 8 9 10 11 12 13 Distance d2 (mm) d Response Time Measurement Circuit Input Output d = 3 mm d = 4 mm d = 5 mm 100 10 1 Load resistance RL (k) d1 = 3.5 mm d1 = 4.0 mm d1 = 4.5 mm 80 110 d 10 5 100 Sensing Position Characteristics (Typical) Relative light current IL (%) Relative light current IL (%) 160 0 0 1,000 10 20 30 40 50 60 70 80 90 Sensing Angle Characteristics (Typical) 180 -10 IF = 2.5 mA Distance d2 (mm) d = 3 mm Ta = 25C d = 4 mm IF = 10 mA d = 5 mm VCE = 10 V -20 0 Vcc = 5 V Ta = 25C 0.01 10 200 0 -30 IF = 5 mA Response Time vs. Load Resistance Characteristics (Typical) 0.1 Sensing Angle Characteristics (Typical) 220 400 Collector-Emitter voltage VCE (V) 1 Distance d (mm) 240 IF = 10 mA 600 60 10 Relative light current IL (%) Light current IL (A) 300 0 800 10,000 120 Sensing object: White paper with a reflection factor of 90% 400 IF = 15 mA 1,000 Ambient temperature Ta (C) Ta = 25C IF = 20 mA VCE = 10 V 500 50 100 Sensing Distance Characteristics (Typical) 600 40 Response time tr, tf (s) Dark Current ID (nA) Relative light current IL (%) 100 1,200 VCE = 10 V 0lx 1,000 110 -20 30 10,000 IF = 10 mA VCE = 5 V 60 -40 20 Dark Current vs. Ambient Temperature Characteristics (Typical) 120 Sensing object: White paper with a reflection factor of 90% 200 Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA Ta = 25C d = 4 mm 1,400 Light current IL (A) 100 1,600 Relative light current IL (%) 50 Light Current vs. Collector-Emitter Voltage Characteristics (Typical) d = 4 mm VCE = 5 V 1,200 Light current IL (A) PC Collector dissipation Pc (mW) Forward current IF (mA) 60 Light Current vs. Forward Current Characteristics (Typical) 0 t 90 % 10 % 0 95 Input t tf tr IL VCC 90 Output 85 80 -20 RL -10 0 10 20 Angle deviation () EE-SY169B Photomicrosensor (Reflective) 185 Photomicrosensor (Reflective) EE-SY171 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * 3-mm-tall, thin model Two, 1.2 dia. Two, 2 dia. Absolute Maximum Ratings (Ta = 25C) Anode mark Item Four, 0.5 Emitter Detector 0 to 30 Four, 0.25 Ambient temperature Internal Circuit A C K E Terminal No. A K C E Name Anode Cathode Collector Emitter 3 mm max. 0.3 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -40C to 85C Storage Tstg -40C to 85C Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 < mm 6 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Symbol Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Forward voltage Symbol Value Condition VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 50 A min., 500 A max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 3.5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 10 V with no reflection Collector-Emitter saturated voltage VCE (sat) --- --- 850 nm typ. VCE = 10 V Peak spectral sensitivity wave- P length Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 186 EE-SY171 Photomicrosensor (Reflective) Engineering Data Ambient temperature Ta (C) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Sensing Position Characteristics (Typical) Relative light current IL (%) Light current IL (A) Sensing Distance Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C Sensing object: White paper with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm Distance d2 (mm) Distance d (mm) IF = 30 mA IF = 20 mA IF = 10 mA Vcc = 5 V Ta = 25C Load resistance RL (k) Ambient temperature Ta (C) Ambient temperature Ta (C) IF = 40 mA Response Time vs. Load Resistance Characteristics (Typical) Response time tr, tf (s) VCE = 10 V 0lx Dark Current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Ta = 25C d = 3.5 mm Sensing object: White paper with a reflection factor of 90% Collector-Emitter voltage VCE (V) Sensing Angle Characteristics (Typical) Relative light current IL (%) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C VCE = 10 V d = 3.5 mm Sensing object: White paper with a reflection factor of 90% Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (A) Light Current vs. Forward Current Characteristics (Typical) Light current IL (A) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C d = 3.5 mm Sensing object: White paper with a reflection factor of 90% Angle deviation () Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY171 Photomicrosensor (Reflective) 187 Photomicrosensor (Reflective) EE-SY193 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact model. * PCB surface mounting type. Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Internal Circuit Recommended soldering patterns C A E K Terminal No. Ambient temperature Name A K Anode Cathode C E Collector Emitter Unless otherwise specified, the tolerances are 0.2 mm. Symbol Rated value Forward current IF 25 mA (see note 1) Pulse forward current IFP 100 mA (see note 2) Reverse voltage VR 6V Collector-Emitter voltage VCEO 18 V Emitter-Collector voltage VECO 4V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr -30C to 80C Storage Tstg -40C to 85C Reflow soldering Tsol 220C (see note 3) Manual soldering Tsol 300C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.1 V typ., 1.3 V max. IF = 4 mA Reverse current IR 10 A max. VR = 6 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 100 A min., 150 A typ., 360 A max. Aluminum-deposited surface, IF = 4 mA, VCE = 2 V, d = 1 mm (see note) VCE = 10 V, 0 lx Dark current ID 100 nA max. Leakage current ILEAK 1 A max. IF = 4 mA, VCE = 2 V Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 900 nm typ. --- Rising time tr 25 s typ. VCC = 2 V, RL = 1 k, Falling time tf 30 s typ. VCC = 2 V, RL = 1 k, Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 188 EE-SY193 Photomicrosensor (Reflective) Engineering Data Light current IL (mA) Sensing Distance Characteristics (Typical) Relative light current IL (%) Response time tr, tf (s) Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Load resistance RL (k) Aluminum deposited surface Dark Current vs. Ambient Temperature Characteristics (Typical) Dark Current ID (nA) Light current IL (mA) Relative light current IL (%) Light Current vs. Collector-Emitter Relative Light Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) Aluminum deposited surface Aluminum deposited surface Forward current IF (mA) Forward current IF (mA) Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Forward current IF (mA) Light current IL (A) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating Aluminum deposited surface 1 mm Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY193 Photomicrosensor (Reflective) 189 Unit: mm (inch) Tape and Reel Reel Tape Tape configuration Terminating part (40 mm min.) Parts mounted Pull-out direction Tape quantity 3,000 pcs./reel 190 EE-SY193 Photomicrosensor (Reflective) Leading part (400 mm min.) Empty (40 mm min.) Precautions Soldering Information Reflow soldering * The following soldering paste is recommended: Melting temperature: 178 to 192C * The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. * Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 10 sec. max. Temperature 220C max. 4C/s max. 40 sec. max. 140 to 160C 4C/s max. 60 to 120 sec Time Manual soldering * Use"Sn 60" (60% tin and 40% lead) or solder with silver content. * Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300C or below. * Solder each point for a maximum of three seconds. * After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel:60C for 24 hours or more Bulk:80C for 24 hours or more EE-SY193 Photomicrosensor (Reflective) 191 Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Dust-tight construction. * With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. * Mounted with M3 screws. * Model with soldering terminals (EE-SB5). * Model with PCB terminals (EE-SB5-B). Two, 3.20.2 dia. holes Optical axis Optical axis Absolute Maximum Ratings (Ta = 25C) Item 90.2 11.50.2 Emitter Four, 0.5 Four, 0.25 2.540.2 2.540.2 7.620.3 EE-SB5 EE-SB5-B Detector Internal Circuit A C K Unless otherwise specified, the tolerances are as shown below. E Dimensions Name 3 < mm 6 0.3 0.375 A K C Anode Cathode Collector 6 < mm 10 0.45 10 < mm 18 0.55 E Emitter 18 < mm 30 0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 80C Storage Tstg -30C to 80C Tsol 260C (see note 3) Soldering temperature Tolerance 3 mm max. Terminal No. Ambient temperature Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA VR = 4 V Reverse current IR 0.01 A typ., 10 A max. Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 200 A min., 2,000 A max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 10 V with no reflection --- --- P 850 nm typ. VCE = 10 V Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Detector Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 192 EE-SB5(-B) Photomicrosensor (Reflective) Engineering Data Distance d (mm) Relative light current IL (%) Sensing Angle Characteristics (Typical) IF = 10 mA VCC = 5 V Ta = 25C Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Sensing Position Characteristics (Typical) Relative light current IL (%) Sensing Position Characteristics (Typical) Relative light current IL (%) Light current IL (A) Ta = 25C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 20 mA Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Distance Characteristics (Typical) VCE = 10 V 0lx IF = 40 mA IF = 30 mA Response time tr, tf (s) Dark Current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C d = 5 mm Sensing object: White paper with a reflection factor of 90% Collector-Emitter voltage VCE (V) Forward current IF (mA) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection fac tor of 90% Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Light current IL (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Distance d2 (mm) Distance d2 (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Ta = 25C IF = 20 mA VCE = 10 V d = 5 mm Output Sensing object: White paper with a reflection factor of 90% Angle deviation () EE-SB5(-B) Photomicrosensor (Reflective) 193 Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Dust-tight construction. * With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. * Mounted with M2 screws. * Model with soldering terminals (EE-SF5). * Model with PCB terminals (EE-SF5-B). Matted 1.9 dia. 2.20.2 dia. hole Absolute Maximum Ratings (Ta = 25C) Item Emitter Four, 1.5 Four, 0.5 Four, 0.25 2.540.2 Detector EE-SF5 EE-SF5-B Internal Circuit A C K E Terminal No. A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Dimensions Ambient temperature 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 80C Storage Tstg -30C to 80C Tsol 260C (see note 3) Soldering temperature Tolerance Rated value IF 7.61 2.54 7.620.3 Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 200 A min., 2,000 A max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 10 V with no reflection --- --- 850 nm typ. VCE = 10 V Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength P Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. 194 EE-SF5(-B) Photomicrosensor (Reflective) Engineering Data IF = 20 mA VCE = 5 V Light current IL (mA) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Angle deviation () IF = 20 mA VCE = 5 V Ta = 25C (a) : d1 = 3 mm (b) : d1 = 5 mm Sensing object: White paper with a reflection factor of 90% d1 Sensing Angle Characteristics (Typical) Relative light current IL (%) Ta = 25C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% d = 5 mm VCC = 5 V Ta = 25C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Phototransistor side LED side d1 = 5 mm Distance d2 (mm) Distance d2 (mm) Distance d (mm) Sensing Angle Characteristics (Typical) IF = 10 mA Load resistance RL (k) Relative light current IL (%) Ta = 25C VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 20 mA Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0lx Relative light current IL (%) Light current IL (A) Sensing Distance Characteristics (Typical) Ta = 25C d = 5 mm IF = 40 mA Sensing object: White paper with a reflection factor of 90% IF = 30 mA Collector-Emitter voltage VCE (V) Dark Current ID (nA) Relative light current IL (%) Dark Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (C) Relative light current IL (%) Ta = 25C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90% Forward current IF (mA) Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Response time tr, tf (s) Forward current IF (mA) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Response Time Measurement Circuit Input Output 90 % 10 % Input Sensing object Ta = 25C IF = 20 mA VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90% Output Angle deviation () EE-SF5(-B) Photomicrosensor (Reflective) 195 Photomicrosensor (Reflective) EE-SY310/-SY410 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * Compact reflective model with a molded housing. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * Dark ON model (EE-SY310) * Light ON model (EE-SY410) Five, 0.5 4.6 +0.2 -0.3 Two. R1.5 Two. R2 Absolute Maximum Ratings (Ta = 25C) Five, 0.3 Item Emitter 15 to 18 17 to 24 Detector Internal Circuit A V O K G Terminal No. Name A Anode K Cathode V Power supply (Vcc) O G Output (OUT) Ground (GND) Unless otherwise specified, the tolerances are as shown below. Rated value IF 50 mA (see note 1) Reverse voltage VR 4V Pulse forward current IFP 1A (see note 2) Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible output dissipation POUT 250 mW (see note 1) Operating Topr -40C to 75C Storage Tstg -40C to 85C Tsol 260C (see note 3) Tolerance Ambient temperature 3 mm max. 0.2 Soldering temperature 3 < mm 6 6 < mm 10 0.24 0.29 10 < mm 18 0.35 18 < mm 30 0.42 Dimensions Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Condition VF 1.2 V typ., 1.5 V max. IF = 20 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P Detector Value Forward voltage 920 nm typ. IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EE-SY310), with incident light (EE-SY410) (see notes 1 and 2) High-level output voltage VOH 15 V min. Vcc = 16 V, RL = 1 k, with incident light (EE-SY310), without incident light (EE-SY410) (see notes 1 and 2) Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V Peak spectral sensitivity wavelength P 870 nm typ. VCC = 4.5 to 16 V IFT 6 mA typ., 15 mA max. VCC = 4.5 to 16 V LED current when output is OFF LED current when output is ON Hysteresis H 17% typ. VCC = 4.5 to 16 V Response frequency f 50 Hz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA 196 EE-SY310/-SY410 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 4. The value of the response frequency is measured by rotating the disk as shown below. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm. 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON. 15 mm 5 mm 5. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EE-SY410. Input Input Output Output (tPLH) (tPHL) (tPHL) EE-SY310 (tPLH) EE-SY410 Engineering Data Note: The values in the parentheses apply to the EE-SY410. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Ta = 25C VCC = 5 V IF = 0 mA (15 mA) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Output current IOUT (mA) Response Delay Time vs. Forward Current (Typical) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25C RL = 1 k Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = 70C Low level output voltage VOL (V) VCC = 5 V RL = 330 Ta = -30C Ta = 25C LED Current vs. Supply Voltage (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Distance d2 (mm) LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCC = 5 V Ta = 25C Sensing object: White paper with a reflection factor of 90% Operate Release Forward current IF (mA) Distance d1 (mm) EE-SY310/-SY410 Photomicrosensor (Reflective) 197 Photomicrosensor (Reflective) EE-SY313/-SY413 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates an IC chip with a built-in detector element and amplifier. * Incorporates a detector element with a built-in temperature compensation circuit. * Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. * A wide supply voltage range: 4.5 to 16 VDC * Directly connects with C-MOS and TTL. * Dark ON model (EE-SY313) * Light ON model (EE-SY413) Five, 0.5 Absolute Maximum Ratings (Ta = 25C) Item Emitter 15 to 18 17 to 24 Detector Internal Circuit A V O K G Terminal No. Name Dimensions Tolerance Anode 3 mm max. 0.3 K Cathode 3 < mm 6 V Power supply (Vcc) 6 < mm 10 0.375 0.45 O G Output (OUT) Ground (GND) 10 < mm 18 0.55 18 < mm 30 0.65 Rated value 50 mA (see note 1) Reverse voltage VR 4V Pulse forward current IFP 1A (see note 2) Power supply voltage VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA POUT Permissible output dissipation Unless otherwise specified, the tolerances are as shown below. A Symbol Forward current IF 250 mW (see note 1) Ambient tem- Operating perature Storage Topr -40C to 65C Tstg -40C to 85C Soldering temperature Tsol 260C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EESY313), with incident light (EE-SY413) (see notes 1 and 2) Low-level output voltage VOL IF = 20 mA High-level output voltage VOH 15 V min. Vcc = 16 V, RL = 1 k, with incident light (EE-SY313), without incident light (EE-SY413) (see notes 1 and 2) Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V 870 nm typ. VCC = 4.5 to 16 V IFT 10 mA typ., 20 mA max. VCC = 4.5 to 16 V Hysteresis H 17% typ. VCC = 4.5 to 16 V Response frequency f 50 pps min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA Response delay time tPLH (tPHL) 3 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA Response delay time tPHL (tPLH) 20 s typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA Peak spectral sensitivity P wavelength LED current when output is OFF LED current when output is ON 198 EE-SY313/-SY413 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 4. The value of the response frequency is measured by rotating the disk as shown below. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm. 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON. 15 mm 15 mm 4.4 mm 5. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EE-SY413. Input Input Output Output (tPLH) (tPHL) (tPHL) EE-SY313 (tPLH) EE-SY413 Engineering Data Note: The values in the parentheses apply to the EE-SY413. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) LED current IFT (mA) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Low-level Output Voltage vs. Output Current (Typical) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Ta = 25C VCC = 5 V IF = 0 mA (20 mA) Output current IC (mA) Response Delay Time vs. Forward Current (Typical) Response delay time tPHL, tPLH (s) Current consumption Icc (mA) Ta = 25C IF = 0 mA (15 mA) Ta = 70C Ta = 25C RL = 1 k Forward voltage VF (V) Ambient temperature Ta (C) Current Consumption vs. Supply Voltage (Typical) Ta = -30C Ta = 25C Low level output voltage VOL (V) VCC = 5 V RL = 330 LED Current vs. Supply Voltage (Typical) VCC = 5 V RL = 330 Ta = 25C VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) VCC = 5 V IF = 0 mA (20 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Distance d2 (mm) LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCC = 5 V Ta = 25C Sensing object: White paper with a reflection factor of 90% Operate Release tPLH (tPHL) Forward current IF (mA) Distance d1 (mm) EE-SY313/-SY413 Photomicrosensor (Reflective) 199 200 EE-SY313/-SY413 Photomicrosensor (Reflective) Emitters and Detectors Emitters EE-L105X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE-L109. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Detectors EE-TP105X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE-TP109 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE-TP305X/EE-TP405X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 204 206 208 210 201 Infrared LED EE-L105X Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Epoxy resin molded model with narrow sensing angle. * Dimensions are the same as for EE-TP105X, EE-TP305X, and EETP405X Detectors, making them ideal for combining as Photomicrosensors. 3.50.2 2.50.2 40.2 2 dia. R0.8 Absolute Maximum Ratings (Ta = 25C) 4.20.2 2.50.2 Item 2.5 1 max. 11.20.5 K A Two, 0.5 0.25 max. 0.25 2.250.2 2.5 A K 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 4V Ambient tem- Operating perature Storage Topr -20C to 85C Tstg -40C to 85C Soldering temperature Tsol 260C (see note 3) Unless otherwise specified, the tolerances are as shown below. A Terminal No. Rated value IF Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Internal Circuit K Symbol Forward current Name Dimensions Tolerance A Anode 3 mm max. 0.3 K Cathode 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 30 mA Light output IO 2 mA min., 10 mA typ. IF = 20 mA (see note) Note: Light Output Measurement Method Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard phototransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 x 2 mm in front of each lens. Measurement is performed in darkness to prevent external light interference. 6.5 mm Io A Slit: 2 x 2 mm Infrared LED 202 Standard phototransistor VCE = 10 V IF = 20 mA (hFE = 600, VCE = 10 V, IC = 2 mA) EE-L105X Infrared LED Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Temperature Rating Chart 80 100 60 50 40 30 20 10 50 IF (MAX) RATED 120 Ta = 25C IF = 30 mA 110 (Typical) Relative output (%) Forward current IF (mA) 70 Forward current IF (mA) Ta = 25C 70 Spectral Sensitivity Waveform Characteristics (Typical) 30 10 7 5 3 100 90 80 70 60 50 40 30 20 10 0 -30 -20 -10 0 1 0.9 10 20 30 40 50 60 70 80 90 100 1.0 1.1 1.2 1.3 1.4 Forward voltage VF (V) Ambient temperature Ta (C) 1.5 0 0 700 800 900 1,000 1,100 1,200 1,300 Waveform (nm) Sensing Angle Characteristics (Typical) 30 40 50 60 Specified angle 0 10 100 10 Relative sensitivity (%) 20 0 20 30 80 40 50 60 60 40 70 70 80 90 20 80 90 EE-L105X Infrared LED 203 Infrared LED EE-L109 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Epoxy resin molded model with narrow sensing angle. * Dimensions are the same as for EE-TP109 Phototransistors, making them ideal for combining as Photomicrosensors. 2 1.8 3 1.2 dia. 3.5 1.2 Absolute Maximum Ratings (Ta = 25C) 1.3 0.2 max. 0.1 Item R0.4 2.5 1 2.35 1.4 0.1 1 max. 11.2 K Rated value IF 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 4V Ambient tem- Operating perature Storage Topr -20C to 85C Tstg -40C to 85C Soldering temperature Tsol 260C (see note 3) A 0.3 max. 0.5 Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. 0.25 0.25 max. 1.05 2.5 Internal Circuit K Symbol Forward current A K Unless otherwise specified, the tolerances are as shown below. A Terminal No. Name Dimensions Tolerance A Anode 3 mm max. 0.3 K Cathode 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 30 mA Light output IO 2 mA min., 10 mA typ. IF = 20 mA (see note) Note: Light Output Measurement Method Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard phototransistor (hFE = 600 at VCE = 10 V IC = 2 mA) with the devices facing each other at a distance of 3.5 mm, with a slit board of 2 x 2 mm in front of each lens. Measurement is performed in darkness to prevent external light interference. 3.5 mm Io A Slit: 2 x 2 mm Infrared LED 204 Standard phototransistor IF = 20 mA VCE = 10 V (hFE = 600, VCE = 10 V, IC = 2 mA) EE-L109 Infrared LED Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Temperature Rating Chart 100 80 60 50 40 30 20 10 50 Ta = 25C IF = 30 mA 110 (Typical) IF (MAX) RATED 100 Relative output (%) Forward current IF (mA) 70 120 Ta = 25C 70 Forward current IF (mA) Spectral Sensitivity Waveform Characteristics (Typical) 30 10 7 5 3 90 80 70 60 50 40 30 20 10 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 1 0.9 1.0 1.1 1.2 1.3 1.4 Forward voltage VF (V) Ambient temperature Ta (C) 1.5 0 0 700 800 900 1,000 1,100 1,200 1,300 Waveform (nm) Sensing Angle Characteristics (Typical) 20 50 60 Relative sensitivity (%) 30 40 Specified angle 0 10 100 10 0 20 30 80 40 50 60 60 40 70 80 90 70 20 80 90 EE-L109 Infrared LED 205 Phototransistor EE-TP105X Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Epoxy resin molded model with narrow sensing angle. * Designed so that the peak spectral sensitivity waveform matches the peak emission waveform (900 to 940 nm) for ease of use. * Dimensions are the same as for EE-L105X Infrared LEDs, making them ideal for combining as Photomicrosensors. 3.50.2 2.50.2 40.2 2 dia. R0.8 4.20.2 2.50.2 Absolute Maximum Ratings (Ta = 25C) 2.5 Item 1 max. 11.20.5 E C 0.25 Two, 0.5 0.25 max. 2.250.2 Symbol Rated value Collector-Emitter voltage VCEO 30 V (see note 1) Collector current IC 20 mA Collector dissipation PC 100 mW Ambient tem- Operating perature Storage Topr -20C to 85C Tstg -40C to 85C Soldering temperature Tsol 260C (see note 2) 2.5 Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Internal Circuit E C E Unless otherwise specified, the tolerances are as shown below. C Terminal No. Dimensions Name Tolerance C Collector 3 mm max. 0.3 E Emitter 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Light current IL Dark current Collector-Emitter saturated voltage Value Condition 1 mA min. IF = 20 mA, VCE = 10 V (see note) ID 200 nA max. VCE = 10 V VCE (sat) 0.4 V max. IF = 20 mA, IL = 1 mA (see note) Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V DC amplification rate hFE 800 typ. VCE = 10 V, IL = 2 mA Note: Light Output Measurement Method and Conditions (Light Current, Collector-Emitter Saturated Voltage) Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard phototransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 x 2 mm in front of each lens. Measurement is performed in darkness to prevent external light interference. (A standard infrared LED has an light output of 2 mA when measured using the method in the following diagram and a standard phototransistor with VCE = 10 V, IC = 2mA and (hFE = 600.) 6.5 mm IL A Slit: 2 x 2 mm Phototransistor 206 Standard infrared LED V VCE (sat) VCE = 10 V IF = 20 mA (VCE = 10 V, IC = 2 mA, hFE = 600) EE-TP105X Phototransistor Engineering Data I/O Characteristics (Typical) Temperature Ratings Chart 130 120 100 20 Dark current ID (nA) Light current IL (mA) Collector dissipation PC (mW) 140 Dark Current Temperature Dependency (Typical) Ta=25C VCE=10 V constant 18 16 14 VCE=10 V 0l x Estimated worst value 10,000 12 80 10 60 8 1,000 Typical value 6 40 100 4 20 2 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Spectral Sensitivity Characteristics (Typical) 0 0 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Sensing Angle Sensitivity Characteristics (Typical) Specified angle 0 Ta=25C 110 10 -20 -10 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Forward current IF (mA) 120 30 90 40 80 70 50 60 50 10 100 Relative sensitivity (%) 20 100 Relative sensitivity (%) 100,000 10 0 20 30 80 40 50 60 60 40 60 40 30 70 70 20 10 0 80 0 500 600 700 800 900 20 80 1,000 1,100 1,200 Wavelength (nm) 90 90 EE-TP105X Phototransistor 207 Phototransistor EE-TP109 Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Epoxy resin molded model with narrow sensing angle. * Designed so that the peak spectral sensitivity waveform matches the peak emission waveform (900 to 940 nm) for ease of use. * Dimensions are the same as for EE-L109 Infrared LEDs, making them ideal for combining as Photomicrosensors. 2 1.8 3 1.2 dia. 1.2 3.5 1.3 0.2 max. 0.1 Absolute Maximum Ratings (Ta = 25C) R0.4 2.5 Item 1 2.35 1 max. 11.2 E C 0.3 max. 0.25 0.5 0.25 max. 1.05 Rated value VCEO 30 V (see note 1) Collector current IC 20 mA Collector dissipation PC 100 mW Ambient tem- Operating perature Storage Topr -20C to 85C Tstg -40C to 85C Soldering temperature Tsol 260C (see note 2) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. 2.5 Internal Circuit E Symbol Collector-Emitter voltage C E C Terminal No. Name C Collector E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Light current IL Dark current Collector-Emitter saturated voltage Value Condition 0.5 mA min. IF = 20 mA, VCE = 10 V (see note) ID 200 nA max. VCE = 10 V VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA (see note) Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V DC amplification rate hFE 800 typ. VCE = 10 V, IL = 2 mA Note: Light Output Measurement Method and Conditions (Light Current, Collector-Emitter Saturated Voltage) Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard phototransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 3.5 mm, with a slit board of 2 x 2 mm in front of each lens. Measurement is performed in darkness to prevent external light interference. (A standard infrared LED has an light output of 2 mA when measured using the method in the following diagram and a standard phototransistor with VCE = 10 V, IC = 2mA and hFE = 600.) 3.5 mm IL A Slit: 2 x 2 mm Phototransistor 208 Standard infrared LED V VCE (sat) VCE = 10 V IF = 20 mA (VCE = 10 V, IC = 2 mA, hFE = 600) EE-TP109 Phototransistor Engineering Data Temperature Ratings Chart 130 120 100 Dark Current Temperature Dependency (Typical) 20 Dark current ID (nA) Light current IL (mA) Collector dissipation PC (mW) 140 I/O Characteristics (Typical) Ta = 25C 18 VCE=10 V constant 16 14 100,000 VCE=10 V 0lx Estimated worst value 10,000 12 1,000 10 80 8 60 TYP 6 100 40 4 20 2 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Spectral Sensitivity Characteristics (Typical) 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Sensing Angle Sensitivity Characteristics (Typical) Ta = 25C 110 10 -20 -10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Forward current IF (mA) 20 30 100 90 40 80 50 70 60 60 50 Specified angle 0 10 100 10 Relative sensitivity (%) Relative sensitivity (%) 120 0 80 0 20 30 40 50 60 60 40 40 70 70 30 20 80 20 80 10 0 0 500 600 700 800 900 1,000 1,100 1,200 90 90 Wavelength (nm) EE-TP109 Phototransistor 209 Photo IC EE-TP305X/EE-TP405X Be sure to read Precautions on page 27. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Incorporates a built-in amplifier and detector element. * Superior temperature characteristics with a built-in temperature compensation circuit. * A wide supply voltage range of 4.5 to 16 VDC, enabling driving devices from C-MOS to TTL. * Superior repetitive accuracy with built-in Schmitt trigger circuit. * Dark ON model (EE-TP305X) and Light ON model (EE-TP405X) * Molding dimensions are the same as for EE-L105X Infrared LEDs, making them ideal for combining as Photomicrosensors with built-in amplifiers. 3.50.2 2.50.2 40.2 4.20.2 2.50.2 2.5 1 11.20.5 13.30.5 Absolute Maximum Ratings (Ta = 25C) G Item V O Three, 0.5 0.2 max. 0.25 0.25 max. 1.25 2.250.2 1.25 Symbol VCC 16 V Output voltage VOUT 28 V Output current IOUT 16 mA 250 mW (see note 1) Output permissible dissipation POUT Internal Circuit G O V Rated value Power supply voltage -40C to 85C Topr Ambient tempera- Operating ture Storage Tstg -40C to 85C Soldering temperature Tsol 260C (see note 2) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. V O G Terminal No. Name V Power supply (Vcc) O Output (OUT) G Ground (GND) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Power supply voltage VCC 4.5 V min., 16 V max. --- Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL =16 mA High-level output voltage VOH 15 V min. VCC = 16 V, VOUT = 16 V, RL = 1 k Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V LED threshold current IFT (see note 1) 3 mA typ., 8 mA max. VCC = 4.5 to 16 V Hysteresis H (see note 2) 15% typ. VCC = 4.5 to 16 V Response delay time tPLH (tPHL) (see note 3) 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Response delay time tPHL (tPLH) (see note 3) 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Note: 1. LED Threshold Current Measurement Method and Conditions Measurement is performed, as shown in the following Fig. A and Fig. B, with the optical axis of the Photo IC aligned with that of a standard infrared LED with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 x 2 mm in front of each lens. The forward current IFT of the standard infrared LED is measured when the Photo IC output is inverted. Measurement is performed in darkness to prevent external light interference. (A standard infrared LED is an infrared LED for which IL = 2 mA when measured using the method shown in Fig. C with a standard phototransistor in place of the Photo IC shown in Fig. A with VCE = 10 V, IL = 2mA and hFE = 600.) 210 EE-TP305X/EE-TP405X Photo IC Fig. A Fig. B 6.5 mm VOUT GND Slit: 2 x 2 mm Photo IC ICC VCC Fig.C IL RL IOL mA VOL VOH IFT mA VCE = 10 V Standard Infrared LED IF = 20 mA 2. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents for the two output statuses (turning ON and OFF). 3. The following illustrations show the definition of response delay time. EE-TP305X IF IF EE-TP405X The electrical characteristics tPHL and tPLH are applicable for the EETP405X. Input 0 Input 0 t t Output 0 tPLH tPHL t t Output 0 tPHL tPLH Engineering Data PC 200 150 100 50 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Low-level output voltage VOL (mV) Ta = 25C VCC = 5 V VCC IOL VOL O 1 10 100 VCC RL 110 Ta = 25C RL = 1 k GND 105 IFT OFF (IFT ON) 100 95 90 IFT ON (IFT OFF) 85 0 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) 100 10 IFT 115 Relative LED Threshold Current vs. Ambient Temperature Characteristics (Typical) 120 IFT 500 Output current IOL (mA) 0.16 110 GND 105 IFT ON (IFT OFF) 100 95 IFT OFF (IFT ON) 90 85 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (C) Current Consumption vs. Supply Voltage Characteristics (Typical) 4 VCC = 5 V 0.14 IOL=16 mA 0.12 0.10 VCC 0.08 IOL VOL 0.06 Ta = 25C RL = 1 k VCC RL 115 Supply voltage VCC (V) Low-level Output Voltage vs. Low-level Output Current Characteristics (Typical) 1,000 120 Current consumption ICC (mA) 250 Relative LED threshold current IFT (%) 300 Relative LED Threshold Current vs. Supply Voltage Characteristics (Typical) Low-level output voltage VOL (mV) Permissible output dissipation Pout (mW) Temperature Rating Chart Relative LED threshold current IFT (%) The values in parentheses are for EE-TP405X. Note: O IOL=5 mA 0.04 0.02 3 2.5 2 1.5 ICC 1 VCC 0.5 0 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ta = 25C IF = 0 mA (15 mA) 3.5 GND 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Supply voltage VCC (V) Ambient temperature Ta (C) Spectral Sensitivity Characteristics (Typical) 120 Internal Circuit Configuration 100 90 Voltage stabilizer 80 70 V ICC VCC RL 60 Temperature compensation preamplifier 50 40 30 Schmitt switching circuit Output transistor Relative sensitivity (%) 110 O OUT VOL VOH G 20 IOL GND 10 0 0 400 500 600 700 800 900 1,000 1,100 1,200 Waveform (nm) EE-TP305X/EE-TP405X Photo IC 211 212 EE-TP305X/EE-TP405X Photo IC Information Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Security Trade Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 213 Reliability Market Product Quality OMRON is making efforts so that OMRON's Photomicrosensors can achieve a failure rate of only 10-7/h. OMRON will continue improving the quality of its products to comply with OMRON Photomicrosensors users' demand for product quality while actively providing good after-sales service. OMRON's Photomicrosensors achieved a failure rate of 10 ppm. Figure 5 shows the reasons for the return of OMRON Photomicrosensors. The reasons for approximately two-thirds of the products sent back were that they were not working or they were destroyed. It is possible that they were not working or they were destructed because excessive voltages were imposed on them or they were not operated properly according to their specifications. To solve such problems, OMRON is actively holding preliminary meetings with customers who will use OMRON products and advise them of the operating conditions required by the products while actively providing them with after-sales service. Figure 5. Reasons for Products Sent Back Design problems Other (0.4%) (1.8%) Element problems (7.2%) Component problems (27.0%) Destruction (35.3%) Not working (28.4%) Reliability The life of any Photomicrosensor depends on the secular changes of the optical output of the LED built into the Photomicrosensor. The following are the output characteristics of the Photomicrosensor, all of which depend on the optical output of the LED. Phototransistor output Light current (IL) Photo IC output LED current IFT with the photo IC output ON and OFF Amplifier output (reflective sensor) Sensing distance d OMRON has been conducting reliability tests of each type of Photomicrosensor to check the secular changes of the optical output of the LED built into the Photomicrosensor. 214 Product Quality Control and Reliability Reliability Tests In principle, Photomicrosensors conform to JEITA standards. The following table shows the details of the reliability tests of Photomicrosensors conducted by OMRON. Figure 6. Details of Reliability Tests Classification Test Detail Conforming standard Thermal con- Soldering heat dition test resistivity Evaluates the soldering heat resistivity of products. Usually, JEITA ED-4701/300 this test is conducted under the following conditions. ED-8121 Soldering temperature: 2605C JIS C7021: A1 Soldering time:101 s IEC Pub68-2-20 Thermal shock Evaluates the resistivity of products to radical temperature JEITA ED-4701/300 changes. Usually, this test is conducted under the following JIS C7021: A3 IEC Pub68-2-14 conditions. Ta: 0C to 100C (liquid bath) or TstgMIN to TstgMAX (liquid bath) Temperature cy- Evaluates the low- and high-temperature cle resistivity of products. Tstg min. (30 min) 25C (5 min) Tstg max. (30 min) 25C (5 min) JEITA ED-4701/100 JIS C7021: A4 IEC Pub68-2-14 The five-minute storage periods at a temperature of 25C in the test may be omitted. 1 cycle Temperature Evaluates the high-temperature and and humidity cy- high-humidity resistivity of products. cle 65C 90% to 95% 25C 10 cycles -10C 24 h Mechanical test JEITA ED-4701/200 JIS C7021: A5 IEC Pub68-2-4 1 cycle Soldering ease Evaluates the terminal soldering ease of the products. Usu- JEITA ED-4701/300 ally, this test is conducted under the following conditions. ED-8121 Soldering temperature: 2305C JIS C7021: A2 Soldering time: 50.5 s IEC Pub68-2-20 Terminal strength Evaluates the resistivity of the terminals of products to the force imposed on the terminals while the products are mounted, wired, or operated. 1. Tension test On each terminal of products, a specified load is imposed for 101 s in the direction of the terminal. 2. Bending test On the tip of each terminal of products, a specified load is imposed to bend the terminal by 90 and to change it back. JEITA ED-4701/400 ED-8121 JIS C7021: A11 IEC Pub68-2-21 Shock resistance Judges the structural resistivity and mechanical resistivity of JEITA ED-4701/400 products. The conditions of this test vary with the product ED-8121 structure. Usually, this test is conducted under the following JIS C7021: A7 conditions. IEC Pub68-2-27 Impact acceleration:14,700 m/s2 Pulse width: 0.5 ms A product may be subjected to this test after it is packed up. Vibration resistance Evaluates the vibration resistivity of products while they are JEITA ED-4701/400 transported or operated. Usually, this test is conducted under ED-8121 the following conditions. JIS C7021: A10 Frequency: 100 to 2000 Hz/4 min IEC Pub68-2-21 200 m/s2 A product may be subjected to this test after it is packed up. Natural drop JEITA EIAJ-8121 Evaluates the irregular shock resistivity of products while they are handled, transported, or operated. Usually, this test JIS C7021: A8 IEC Pub68-2-32 is conducted under the following conditions. Height: 75 cm No. of times: 3 A product may be subjected to this test after it is packed up. Product Quality Control and Reliability 215 Classification Test Detail Life expectan- Continuous op- Evaluates the resistivity of products to a continuous, longcy test eration time electrical stress and temperature stress. Usually, this test is conducted under the following conditions. Ta: 255C Bias: IFMAX or PCMAX High-temperature storage Evaluates the resistivity of products to a high-storage temperature for a long time. Usually, this test is conducted under the following conditions. Ta: TstgMAX Time: 1,000 hrs EIAJ-EDX-8121 EIAJ-SD-121: 115 JIS C7021: B10 IEC Pub68-2-2 Low-temperature storage Evaluates the resistivity of products to a low-storage temperature for a long time. Usually, this test is conducted under the following conditions. Ta: TstgMIN Time: 1,000 hrs EIAJ-EDX-8121 EIAJ-SD-121: 116 JIS C7021: B12 IEC Pub68-2-1 High-temperature and highhumidity storage Evaluates the resistivity of products to a high-storage temperature and high storage humidity for a long time. Usually, this test is conducted under the following conditions. Ta: 60C Humidity: 90% Time: 1,000 hrs EIAJ-EDX-8121 EIAJ-SD-121: 117 JIS C7021: B11 IEC Pub68-2-3 High-temperature reverse bias Evaluates the resistivity of products to a continuous electrical EIAJ-SD-121: 203 stress and temperature stress. JIS C7021: B8 Note: The above testing conditions and testing times depend on the features of each product. 216 Conforming standard EIAJ-EDX-8121 EIAJ-SD-121: 201 JIS C7021: B4 Product Quality Control and Reliability A product may be subjected to this test at a high temperature, low temperature, or high temperature and humidity. A product may be subjected to this test at a low temperature, high temperature, or high humidity. Data from Reliability Tests The following tables show the results of the reliability tests of typical Transmissive Photomicrosensors with an Infrared LED conducted by OMRON. Providing this data does not imply that OMRON guarantees the specified reliability level. Typical Failure Rates (MTTF Data) EE-SX1041 (Transmissive Phototransistor Output) Failure Criteria Item Symbol Measuring conditions Failure criteria General test (see note) Life test Forward voltage VF IF = 30 mA 1.5 V max. 1.8 V max. Reverse current IR VR = 4 V 10 A max. 20 A max. Dark current ID VCE = 10 V 0lx 200 nA max. 400 nA max. Light current IL IF = 20 mA VCE = 10 V 0.5 mA min. 14 mA max. Initial value x 0.7 min. Note: Except life test. Test Results Test item Continuous operation Test conditions (see note 1) Number of samples Ta = 25C, IF = 50 mA 2000 h Component hours Number of failures (h) Failure rate (1/h) (see note 2) 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature stor- Ta = 100C age 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 Low-temperature stor- Ta = -30C age 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature and high-humidity storage Ta = 60C, 90% 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature reverse bias Ta = 85C, VCE = 30 V 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 Temperature cycle -30C (30 min) to 100C (30 min) 22 pcs 10 times --- 0 --- Shock resistance 11 pcs 14,700 m/s2, 0.5 ms, 3 times each in X, Y, and Z directions --- 0 --- Vibration resistance 11 pcs 20 to 2,000 Hz, 1.5 mm or 98 m/s2 each in X, Y, and Z directions --- 0 --- Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. Product Quality Control and Reliability 217 EE-SX1235A-P2 (Transmissive Phototransistor Output) Failure Criteria Item Symbol Forward voltage Measuring conditions VF IF = 30 mA Failure criteria General test (see note) 1.5 V max. Life test 1.8 V max. Reverse current IR VR = 4 V 10 A max. 20 A max. Dark current ID VCE = 10 V 0lx 200 nA max. 400 nA max. Light current IL IF = 20 mA VCE = 5 V 0.5 mA min. 14 mA max. Initial value x 0.7 min. Note: Except life test. Test Results Test item Continuous operation Test conditions (see note 1) Ta = 25C, IF = 50 mA 2000 h Number of samples Component hours Number of failures (h) Failure rate (1/h) (see note 2) 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature stor- Ta = 100C age 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 Low-temperature stor- Ta = -40C age 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature and high-humidity storage Ta = 60C, 90% 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 High-temperature reverse bias Ta = 85C, VCE = 30 V 2000 h 22 pcs 4.4 x 104 0 5.22 x 10-5 Temperature cycle -40C (30 min) to 100C (30 min) 22 pcs 10 times --- 0 --- Shock resistance 294 m/s2, 0.5 ms, 3 times each in 11 pcs X, Y, and Z directions --- 0 --- Vibration resistance 5 to 50 Hz, 1.5 mm or 9.8 m/s2 each in X, Y, and Z directions 11 pcs --- 0 --- Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. 218 Product Quality Control and Reliability EE-SX398 (Transmissive Photo-IC Output) Failure Criteria Item Forward voltage Symbol Measuring conditions Failure criteria General test (see note) Life test VF IF = 20 mA 1.5 V max. Reverse current IR VR = 4 V 10 A max. 20 A max. Low-level output voltage VOL VCC = 16 V 0.4 V max. 0.48 V max. 100 A max. 200 A max. 1.8 V max. IOL = 16 mA IF = 0 mA High-level output current IOH Current consumption ICC VCC = 16 V 10 mA max. 12 mA max. LED current when output is OFF IFT VCC = 16 V 5 mA max. Initial value x 1.3 max. VCC = 16 V VOUT = 28 V IF = 5 mA IOL = 16 mA Note: Except life test. Test Results Test item Continuous operation Test conditions (see note 1) Number of samples Ta = 25C, IF = 20 mA, VCC = 5 V 22 pcs 1500 h Component hours Number of failures (h) Failure rate (1/h) (see note 2) 3.3 x 104 0 6.96 x 10-5 High-temperature stor- Ta = 100C age 2000 h 22 pcs 3.3 x 104 0 6.96 x 10-5 Low-temperature stor- Ta = -40C age 2000 h 22 pcs 3.3 x 104 0 6.96 x 10-5 High-temperature and high-humidity storage Ta = 60C, 90% 2000 h 22 pcs 3.3 x 104 0 6.96 x 10-5 High-temperature reverse bias Ta = 85C, VCE = 30 V 2000 h 22 pcs 3.3 x 104 0 6.96 x 10-5 Temperature cycle -40C (30 min) to 100C (30 min) 22 pcs 10 times --- 0 --- Shock resistance 11 pcs 14,700 m/s2, 0.5 ms, 3 times each in X, Y, and Z directions --- 0 --- Vibration resistance 11 pcs 20 to 2,000 Hz, 1.5 mm or 98 m/s2 each in X, Y, and Z directions --- 0 --- Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. Product Quality Control and Reliability 219 EE-SX4235A-P2 (Transmissive Photo-IC Output) Failure Criteria Item Symbol Measuring conditions Failure criteria General test (see note) Life test Current consumption ICC VCC = 5.5 V 16.5 mA max. 19.8 mA max. Low-level output voltage VOL VCC = 4.5 V 0.35 V max. 0.42 V max. High-level output voltage IOH 4.95 V max. 3.96 V max. IOUT = 16 mA with incident VCC = 5.5 V VOUT = VCC with incident RL = 47 k Note: Except life test. Test Results Test item Continuous operation Test conditions (see note 1) Ta = 25C, VCC = 5 V 1000 h Number of samples Component hours Number of failures (h) Failure rate (1/h) (see note 2) 22 pcs 2.2 x 104 0 1.05 x 10-4 High-temperature stor- Ta = 85C age 1000 h 22 pcs 2.2 x 104 0 1.05 x 10-4 Low-temperature stor- Ta = -40C age 1000 h 22 pcs 2.2 x 104 0 1.05 x 10-4 22 pcs 2.2 x 104 0 1.05 x 10-4 High-temperature and high-humidity storage Ta = 60C, 90% 1000 h Temperature cycle -40C (30 min) to 85C (30 min) 22 pcs 10 times --- 0 --- Shock resistance 294 m/s2, 0.5 ms, 3 times each in 11 pcs X, Y, and Z directions --- 0 --- Vibration resistance 5 to 50 Hz, 1.5 mm or 9.8 m/s2 each in X, Y, and Z directions 11 pcs --- 0 --- Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. 220 Product Quality Control and Reliability Light Current (IL) Secular Changes of Phototransistor Output Photomicrosensor Note: Secular changes in Photomicrosensor light current (with a phototransistor output circuit) and LED current (with a photo IC output circuit) during output ON/OFF are generally due to reductions in the LED emission intensity. The emission intensity of a GaAs infrared LED is shown in the graphs below. The information in these graphs applies to most of the GaAs infrared LEDs manufactured by OMRON. Because reductions in the emission intensity of an ordinary red LED tend to be larger than those of an infrared LED, the information in these graphs cannot be applied to ordinary red LEDs. For detailed information, consult your OMRON representative. Ta = 25C, IF = 20 mA, n = 22 Max. IL change rate (%) Ave. Min. Energizing time (h) Ta = 25C, IF = 50 mA, n = 22 Max. IL change rate (%) Ave. Min. Energizing time (h) Ta = 85C, IF = 10 mA, n = 22 IL change rate (%) Max. Ave. Min. Energizing time (h) Product Quality Control and Reliability 221 Ta = -25C, IF = 50 mA, n = 22 Max. IL change rate (%) Ave. Min. Energizing time (h) 222 Product Quality Control and Reliability Security Trade Control (As of March 2003) Purpose of the Export Controls To preserve free trade and global security, it is necessary to prevent the proliferation, development, and production of weapons of mass destructions such as nuclear weapons, biological/chemical weapons, and missile systems. It is also necessary to prevent the accumulation of large amounts of conventional weapons or weapons-related materials to prevent regional disputes. Contents of the Export Controls The following chart provides a simple summary of export controls. The 3 Export Controls Type of Control Controlled Products/Technologies (List) Countries Controlled Non-proliferation Control Weapons of mass destruction or manufacturing equipment (including missiles and nuclear, biological, and chemical weapons) Wassener Arrangement Conventional weapons and related materials (including advanced materials, electronics, computers, and communications equipment) All regions Strict controls are enforced on exports to the 4 special-case countries (Iran, Iraq, Libya, and North Korea). General-purpose products related to weapons of mass destruction (in principle, all items) (Except those in Attached Table 4-2 (26 countries)) Catch-all Controls All regions All regions Development of nuclear weapons Laws, Ordinances, and Regulations Related to Export Controls With respect to the Foreign Exchange Laws (Foreign Exchange and Foreign Trade Laws), etc., it is necessary to obtain approval from the Ministry of Economy, Trade, and Industry when exporting (or providing to a non-resident) any products or technologies* that require approval. If the product or technology is exported without approval or inappropriately, an individual will be charged with a criminal offense and a business will be subject to public penalties as outlined below. Note: The Export Regulations (Export Exchange Regulations), Foreign Exchange Regulations, and related laws and ordinances specify which products and technologies require approval for export. Laws, Ordinances, and Regulations Foreign Exchange Law: Approval is required from the Office of the Ministry of Economy, Trade, and Industry to export regulated products and technologies. Export Regulations: Attached Table 1 (regulated product list), Table 2 (list of treaty-regulated products), and Table 2-2 (UN regulated states) Foreign Exchange Regulations: Attached table (prescription of regulated technologies) If law or regulation is violated: Criminal Violation: Up to 5 years imprisonment and 2,000,000 fine Administrative Violation: Up to 3 years suspension of export rights Public Penalties: Damaged corporate reputation through bad press reports Catch-all Controls Catch-all controls is the general terms used for export controls that apply to the export of all products and technologies when 1) it is know that they will be used for the development or manufacture of weapons of mass destruction or 2) the government has informed an individual or business of such use. Catch-all controls are replacing the previous list controls. Catch-all controls were implemented in Japan on April 1, 2002. Refer to the following websites for further information. * Ministry of Economy, Trade, and Industry: http://www.meti.go.jp/policy/anpo/index.html * CISTEC (Center for Information on Security Trade Control): http://www.cistec.or.jp Security Trade Control 223 Compliance with the Regulations As a corporate citizen of Japan and the global community, OMRON has established a Compliance Program to assure compliance with the regulations outlined above in order to help maintain free trade and global security. We have also planned a training course on export controls. OMRON determines whether each of its products is subject to export controls and carefully controls transactions so that OMRON products are not exported inappropriately. Request to Customers When exporting goods that require export approval, always obtain approval from an Official of the Ministry of Economy, Trade, and Industry. When dealing with products that are subject to export controls, take precautions to prevent incorrect exportation even when the products are resold. When exporting a controlled product, check the final application and end user to verify that the product will not be used in a weapon-related application such as a weapon itself or weapons research. Furthermore, always verify that the OMRON product will not be used in any case in a nuclear weapon, missile, chemical weapon, other weapon, or equipment used to manufacture these weapons. The limitations described above will be submitted to OMRON or an OMRON sales representative as an approval form or contract, so please fully understand and comply with these procedures. If you have any questions, please contact your OMRON representative for further details. These security procedures are based on domestic Japanese laws and apply to exports from Japan. 224 Security Trade Control READ AND UNDERSTAND THIS DOCUMENT Please read and understand this document before using the products. Please consult your OMRON representative if you have any questions or comments. WARRANTY OMRON's exclusive warranty is that the products are free from defects in materials and workmanship for a period of one year (or other period if specified) from date of sale by OMRON. OMRON MAKES NO WARRANTY OR REPRESENTATION, EXPRESS OR IMPLIED, REGARDING NON-INFRINGEMENT, MERCHANTABILITY, OR FITNESS FOR PARTICULAR PURPOSE OF THE PRODUCTS. ANY BUYER OR USER ACKNOWLEDGES THAT THE BUYER OR USER ALONE HAS DETERMINED THAT THE PRODUCTS WILL SUITABLY MEET THE REQUIREMENTS OF THEIR INTENDED USE. OMRON DISCLAIMS ALL OTHER WARRANTIES, EXPRESS OR IMPLIED. LIMITATIONS OF LIABILITY OMRON SHALL NOT BE RESPONSIBLE FOR SPECIAL, INDIRECT, OR CONSEQUENTIAL DAMAGES, LOSS OF PROFITS OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED ON CONTRACT, WARRANTY, NEGLIGENCE, OR STRICT LIABILITY. In no event shall responsibility of OMRON for any act exceed the individual price of the product on which liability is asserted. IN NO EVENT SHALL OMRON BE RESPONSIBLE FOR WARRANTY, REPAIR, OR OTHER CLAIMS REGARDING THE PRODUCTS UNLESS OMRON'S ANALYSIS CONFIRMS THAT THE PRODUCTS WERE PROPERLY HANDLED, STORED, INSTALLED, AND MAINTAINED AND NOT SUBJECT TO CONTAMINATION, ABUSE, MISUSE, OR INAPPROPRIATE MODIFICATION OR REPAIR. SUITABILITY FOR USE THE PRODUCTS CONTAINED IN THIS DOCUMENT ARE NOT SAFETY RATED. THEY ARE NOT DESIGNED OR RATED FOR ENSURING SAFETY OF PERSONS, AND SHOULD NOT BE RELIED UPON AS A SAFETY COMPONENT OR PROTECTIVE DEVICE FOR SUCH PURPOSES. Please refer to separate catalogs for OMRON's safety rated products. OMRON shall not be responsible for conformity with any standards, codes, or regulations that apply to the combination of products in the customer's application or use of the product. At the customer's request, OMRON will provide applicable third party certification documents identifying ratings and limitations of use that apply to the products. This information by itself is not sufficient for a complete determination of the suitability of the products in combination with the end product, machine, system, or other application or use. The following are some examples of applications for which particular attention must be given. This is not intended to be an exhaustive list of all possible uses of the products, nor is it intended to imply that the uses listed may be suitable for the products: * Outdoor use, uses involving potential chemical contamination or electrical interference, or conditions or uses not described in this document. * Nuclear energy control systems, combustion systems, railroad systems, aviation systems, medical equipment, amusement machines, vehicles, safety equipment, and installations subject to separate industry or government regulations. * Systems, machines, and equipment that could present a risk to life or property. Please know and observe all prohibitions of use applicable to the products. NEVER USE THE PRODUCTS FOR AN APPLICATION INVOLVING SERIOUS RISK TO LIFE OR PROPERTY WITHOUT ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO ADDRESS THE RISKS, AND THAT THE OMRON PRODUCT IS PROPERLY RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE OVERALL EQUIPMENT OR SYSTEM. READ AND UNDERSTAND THIS DOCUMENT 225 PERFORMANCE DATA Performance data given in this document is provided as a guide for the user in determining suitability and does not constitute a warranty. It may represent the result of OMRON's test conditions, and the users must correlate it to actual application requirements. Actual performance is subject to the OMRON Warranty and Limitations of Liability. CHANGE IN SPECIFICATIONS Product specifications and accessories may be changed at any time based on improvements and other reasons. It is our practice to change model numbers when published ratings or features are changed, or when significant construction changes are made. However, some specifications of the product may be changed without any notice. When in doubt, special model numbers may be assigned to fix or establish key specifications for your application on your request. Please consult with your OMRON representative at any time to confirm actual specifications of purchased products. DIMENSIONS AND WEIGHTS Dimensions and weights are nominal and are not to be used for manufacturing purposes, even when tolerances are shown. ERRORS AND OMISSIONS The information in this document has been carefully checked and is believed to be accurate; however, no responsibility is assumed for clerical, typographical, or proofreading errors, or omissions. PROGRAMMABLE PRODUCTS OMRON shall not be responsible for the user's programming of a programmable product, or any consequence thereof. COPYRIGHT AND COPY PERMISSION This document shall not be copied for sales or promotions without permission. This document is protected by copyright and is intended solely for use in conjunction with the product. Please notify us before copying or reproducing this document in any manner, for any other purpose. If copying or transmitting this document to another, please copy or transmit it in its entirety. 226 READ AND UNDERSTAND THIS DOCUMENT Terms and Conditions of Sale 1. Offer; Acceptance. These terms and conditions (these "Terms") are deemed part of all quotes, agreements, purchase orders, acknowledgments, price lists, catalogs, manuals, brochures and other documents, whether electronic or in writing, relating to the sale of products or services (collectively, the "Products") by Omron Electronics LLC and its subsidiary companies ("Omron"). Omron objects to any terms or conditions proposed in Buyer's purchase order or other documents which are inconsistent with, or in addition to, these Terms. 2. Prices; Payment Terms. All prices stated are current, subject to change without notice by Omron. Omron reserves the right to increase or decrease prices on any unshipped portions of outstanding orders. Payments for Products are due net 30 days unless otherwise stated in the invoice. 3. Discounts. Cash discounts, if any, will apply only on the net amount of invoices sent to Buyer after deducting transportation charges, taxes and duties, and will be allowed only if (i) the invoice is paid according to Omron's payment terms and (ii) Buyer has no past due amounts. 4. Interest. Omron, at its option, may charge Buyer 1-1/2% interest per month or the maximum legal rate, whichever is less, on any balance not paid within the stated terms. 5. Orders. Omron will accept no order less than $200 net billing. 6. Governmental Approvals. Buyer shall be responsible for, and shall bear all costs involved in, obtaining any government approvals required for the importation or sale of the Products. 7. Taxes. All taxes, duties and other governmental charges (other than general real property and income taxes), including any interest or penalties thereon, imposed directly or indirectly on Omron or required to be collected directly or indirectly by Omron for the manufacture, production, sale, delivery, importation, consumption or use of the Products sold hereunder (including customs duties and sales, excise, use, turnover and license taxes) shall be charged to and remitted by Buyer to Omron. 8. Financial. If the financial position of Buyer at any time becomes unsatisfactory to Omron, Omron reserves the right to stop shipments or require satisfactory security or payment in advance. If Buyer fails to make payment or otherwise comply with these Terms or any related agreement, Omron may (without liability and in addition to other remedies) cancel any unshipped portion of Products sold hereunder and stop any Products in transit until Buyer pays all amounts, including amounts payable hereunder, whether or not then due, which are owing to it by Buyer. Buyer shall in any event remain liable for all unpaid accounts. 9. Cancellation; Etc. Orders are not subject to rescheduling or cancellation unless Buyer indemnifies Omron against all related costs or expenses. 10. Force Majeure. Omron shall not be liable for any delay or failure in delivery resulting from causes beyond its control, including earthquakes, fires, floods, strikes or other labor disputes, shortage of labor or materials, accidents to machinery, acts of sabotage, riots, delay in or lack of transportation or the requirements of any government authority. 11. Shipping; Delivery. Unless otherwise expressly agreed in writing by Omron: a. Shipments shall be by a carrier selected by Omron; Omron will not drop ship except in "break down" situations. b. Such carrier shall act as the agent of Buyer and delivery to such carrier shall constitute delivery to Buyer; c. All sales and shipments of Products shall be FOB shipping point (unless otherwise stated in writing by Omron), at which point title and risk of loss shall pass from Omron to Buyer; provided that Omron shall retain a security interest in the Products until the full purchase price is paid; d. Delivery and shipping dates are estimates only; and e. Omron will package Products as it deems proper for protection against normal handling and extra charges apply to special conditions. 12. Claims. Any claim by Buyer against Omron for shortage or damage to the Products occurring before delivery to the carrier must be presented in writing to Omron within 30 days of receipt of shipment and include the original transportation bill signed by the carrier noting that the carrier received the Products from Omron in the condition claimed. 13. Warranties. (a) Exclusive Warranty. Omron's exclusive warranty is that the Products will be free from defects in materials and workmanship for a period of twelve months from the date of sale by Omron (or such other period expressed in writing by Omron). Omron disclaims all other warranties, express or implied. (b) Limitations. OMRON MAKES NO WARRANTY OR REPRESENTATION, EXPRESS OR IMPLIED, ABOUT NON-INFRINGEMENT, MERCHANTABIL- 14. 15. 16. 17. 18. ITY OR FITNESS FOR A PARTICULAR PURPOSE OF THE PRODUCTS. BUYER ACKNOWLEDGES THAT IT ALONE HAS DETERMINED THAT THE PRODUCTS WILL SUITABLY MEET THE REQUIREMENTS OF THEIR INTENDED USE. Omron further disclaims all warranties and responsibility of any type for claims or expenses based on infringement by the Products or otherwise of any intellectual property right. (c) Buyer Remedy. Omron's sole obligation hereunder shall be, at Omron's election, to (i) replace (in the form originally shipped with Buyer responsible for labor charges for removal or replacement thereof) the non-complying Product, (ii) repair the non-complying Product, or (iii) repay or credit Buyer an amount equal to the purchase price of the non-complying Product; provided that in no event shall Omron be responsible for warranty, repair, indemnity or any other claims or expenses regarding the Products unless Omron's analysis confirms that the Products were properly handled, stored, installed and maintained and not subject to contamination, abuse, misuse or inappropriate modification. Return of any Products by Buyer must be approved in writing by Omron before shipment. Omron Companies shall not be liable for the suitability or unsuitability or the results from the use of Products in combination with any electrical or electronic components, circuits, system assemblies or any other materials or substances or environments. Any advice, recommendations or information given orally or in writing, are not to be construed as an amendment or addition to the above warranty. See http://oeweb.omron.com or contact your Omron representative for published information. Limitation on Liability; Etc. OMRON COMPANIES SHALL NOT BE LIABLE FOR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, LOSS OF PROFITS OR PRODUCTION OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED IN CONTRACT, WARRANTY, NEGLIGENCE OR STRICT LIABILITY. Further, in no event shall liability of Omron Companies exceed the individual price of the Product on which liability is asserted. Indemnities. Buyer shall indemnify and hold harmless Omron Companies and their employees from and against all liabilities, losses, claims, costs and expenses (including attorney's fees and expenses) related to any claim, investigation, litigation or proceeding (whether or not Omron is a party) which arises or is alleged to arise from Buyer's acts or omissions under these Terms or in any way with respect to the Products. Without limiting the foregoing, Buyer (at its own expense) shall indemnify and hold harmless Omron and defend or settle any action brought against such Companies to the extent based on a claim that any Product made to Buyer specifications infringed intellectual property rights of another party. Property; Confidentiality. Any intellectual property in the Products is the exclusive property of Omron Companies and Buyer shall not attempt to duplicate it in any way without the written permission of Omron. Notwithstanding any charges to Buyer for engineering or tooling, all engineering and tooling shall remain the exclusive property of Omron. All information and materials supplied by Omron to Buyer relating to the Products are confidential and proprietary, and Buyer shall limit distribution thereof to its trusted employees and strictly prevent disclosure to any third party. Export Controls. Buyer shall comply with all applicable laws, regulations and licenses regarding (i) export of products or information; (iii) sale of products to "forbidden" or other proscribed persons; and (ii) disclosure to non-citizens of regulated technology or information. Miscellaneous. (a) Waiver. No failure or delay by Omron in exercising any right and no course of dealing between Buyer and Omron shall operate as a waiver of rights by Omron. (b) Assignment. Buyer may not assign its rights hereunder without Omron's written consent. (c) Law. These Terms are governed by the law of the jurisdiction of the home office of the Omron company from which Buyer is purchasing the Products (without regard to conflict of law principles). (d) Amendment. These Terms constitute the entire agreement between Buyer and Omron relating to the Products, and no provision may be changed or waived unless in writing signed by the parties. (e) Severability. If any provision hereof is rendered ineffective or invalid, such provision shall not invalidate any other provision. (f) Setoff. Buyer shall have no right to set off any amounts against the amount owing in respect of this invoice. (g) Definitions. As used herein, "including" means "including without limitation"; and "Omron Companies" (or similar words) mean Omron Corporation and any direct or indirect subsidiary or affiliate thereof. Certain Precautions on Specifications and Use 1. Suitability of Use. Omron Companies shall not be responsible for conformity with any standards, codes or regulations which apply to the combination of the Product in the Buyer's application or use of the Product. At Buyer's request, Omron will provide applicable third party certification documents identifying ratings and limitations of use which apply to the Product. This information by itself is not sufficient for a complete determination of the suitability of the Product in combination with the end product, machine, system, or other application or use. Buyer shall be solely responsible for determining appropriateness of the particular Product with respect to Buyer's application, product or system. Buyer shall take application responsibility in all cases but the following is a non-exhaustive list of applications for which particular attention must be given: (i) Outdoor use, uses involving potential chemical contamination or electrical interference, or conditions or uses not described in this document. (ii) Use in consumer products or any use in significant quantities. (iii) Energy control systems, combustion systems, railroad systems, aviation systems, medical equipment, amusement machines, vehicles, safety equipment, and installations subject to separate industry or government regulations. (iv) Systems, machines and equipment that could present a risk to life or property. Please know and observe all prohibitions of use applicable to this Product. NEVER USE THE PRODUCT FOR AN APPLICATION INVOLVING SERIOUS RISK TO LIFE OR PROPERTY OR IN LARGE QUANTITIES WITHOUT ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO 2. 3. 4. 5. ADDRESS THE RISKS, AND THAT THE OMRON'S PRODUCT IS PROPERLY RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE OVERALL EQUIPMENT OR SYSTEM. Programmable Products. Omron Companies shall not be responsible for the user's programming of a programmable Product, or any consequence thereof. Performance Data. Data presented in Omron Company websites, catalogs and other materials is provided as a guide for the user in determining suitability and does not constitute a warranty. It may represent the result of Omron's test conditions, and the user must correlate it to actual application requirements. Actual performance is subject to the Omron's Warranty and Limitations of Liability. Change in Specifications. Product specifications and accessories may be changed at any time based on improvements and other reasons. It is our practice to change part numbers when published ratings or features are changed, or when significant construction changes are made. However, some specifications of the Product may be changed without any notice. When in doubt, special part numbers may be assigned to fix or establish key specifications for your application. Please consult with your Omron's representative at any time to confirm actual specifications of purchased Product. Errors and Omissions. Information presented by Omron Companies has been checked and is believed to be accurate; however, no responsibility is assumed for clerical, typographical or proofreading errors or omissions. &RPSOHWH|7HUPVDQG&RQGLWLRQVRI6DOHIRUSURGXFWSXUFKDVHDQGXVHDUHRQ2PURQ(c)VZHEVLWH DWZZZRPURQFRPRHLXQGHUWKH|$ERXW8VWDELQWKH/HJDO0DWWHUVVHFWLRQ $//',0(16,2166+2:1$5(,10,//,0(7(56 7RFRQYHUWPLOOLPHWHUVLQWRLQFKHVPXOWLSO\E\7RFRQYHUWJUDPVLQWRRXQFHVPXOWLSO\E\ 20521(/(&7521,&6//& 20521&$1$'$,1& 2QH&RPPHUFH'ULYH 6FKDXPEXUJ,/ )RU86WHFKQLFDOVXSSRUWRURWKHULQTXLULHV 0LOQHU$YHQXH 7RURQWR2QWDULR0%9 2052121/,1( *OREDOKWWSZZZRPURQFRP 86$KWWSZZZRPURQFRPRHL &DQDGDKWWSZZZRPURQFD Cat. No. X062-E1-05 8/06 Specifications subject to change without notice Printed in USA