Micro Sensing Device Data Book
Authorized Distributor:
Cat. No. X062-E1-05
OMRON Corporation
Industrial Automation Company
Sensing Devices Division H.Q.
Industrial Sensors Division
Industrial Sensors Division
Shiokoji Horikawa, Shimogyo-ku,
Kyoto, 600-8530 Japan
Tel: (81)75-344-7022/Fax: (81)75-344-7107
Printed in Japan
0306-0.1M(C)
In the interest of product improvement, specifications are
subject to change without notice.
CONTENTS
1
Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Microphotonic Devices
Manuscript Paper Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Photomicrosensors
Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Precautions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Transmissive Photomicrosensors. . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Reflective Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Emitters and Detectors
Emitters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
General Information
Reliability. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Security Trade Control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
2Selection Gu id e
Selection Gui de
Sensing
method Sensing distance Model Output configurati on Features Page
Transmissive 1.0 mm EE-SX1107 Phototransistor Ultra-compact, surface mounting 72
2.0 mm EE-SX1018 Phototransistor Compact, general purpose 32
EE-SX1049 Phototransistor Compact, general purpose 46
EE-SX1103 Phototransistor Ultra-compact, general purpose 66
EE-SX1105 Phototransistor Ultra-compact, general purpose 68
EE-SX1108 Phototransistor Ultra-compact, surface mounting 76
EE-SX1131 Phototransistor Ultra-compact, surface mounting, dual-
channel output
88
EE-SX4134 Photo-IC Ultra-compact, surface mounting 154
EE-SX493 Photo-IC High resolution 146
2.1 mm EE-SX1023-W1 Phototransistor Harness connecting 34
2.8 mm EE-SX1031 Phototransistor Dual-channel output 36
EE-SX1055 Phototransistor Compact, excellent cost performance 48
3.0 mm EE-SX1046 Phototransistor With a horizontal aperture 44
EE-SX1082 Phototransistor With a horizontal aperture 60
EE-SX1106 Phototransistor Ultra-compact, general purpose 70
EE-SX1109 Phototransistor Ultra-compact, surface mounting 80
EE-SX129 Phototransistor High resolution 98
EE-SX198 Phototransistor General purpose 104
EE-SX199 Phototransistor With a positioning boss 106
EE-SX298 Photo-Darlington transistor General purpose 128
EE-SX398/498 Photo-IC General purpose 148
3.4 mm EE-SX1071 Phototransistor General purpose 56
EE-SX1088 Phototransistor Screw mounting 62
EE-SX1096 Phototransistor With a horizontal aperture 64
EE-SX138 Phototransistor Screw mounting 100
EE-SX153 Phototransistor Screw mounting 102
EE-SH3 series Phototransistor Screw mounting 118
EE-SJ3 series Phototransistor Screw mounting 120
EE-SV3 series Phototransistor Screw mounting 126
EE-SX301/401 Photo-IC General purpose 130
EE-SX305/405 Photo-IC With a horizontal aperture 132
EE-SX3088/4088 Photo-IC Screw mounting 138
3.5 mm EE-SX384/484 Photo-IC General purpose 144
3.6 mm EE-SX1057 Phototransistor Dust-proof construction, general purpose 50
EE-SG3(-B) Phototransistor Dust-proof construction 116
4.2 mm EE-SX1128 Phototransistor With a horizontal aperture 86
4.6 mm EE-SX1061 Phototransistor General purpose 52
5.0 mm EE-SX1041 Phototransistor General purpose 40
EE-SX1042 Phototransistor High profile 42
EE-SX1081 Phototransistor General purpose 58
EE-SX1115 Phototransistor High profile with positioning pins 84
EE-SX1137 Phototransistor General purpose 92
EE-SX1235A-P2 Phototransistor Snap-in mounting 96
5.0 mm EE-SJ5-B Phototransistor General purpose 122
3.4 mm EE-SX338 Photo-IC Screw mounting, horizontal aperture 142
Selection Guide 3
Transmissive 5.0 mm EE-SX3081/4081 Photo-IC General purpose 136
4.0 mm EE-SX3133 Photo-IC Screw mounting, horizontal aperture 140
5.0 mm EE-SX3239-P2 Photo-IC Snap-in mounting 160
EE-SX3009-P1/
4009-P1
Photo-IC Screw mounting 150
EE-SX4019-P2 Photo-IC Screw mounting 152
EE-SX4235A-P2 Photo-IC Snap-in mounting 158
EE-SX460-P1 Photo-IC Snap-in mounting 162
5.2 mm EE-SX1035 Phototransistor Compact, wide 38
8.0 mm EE-SX1070 Phototransistor General purpose 54
EE-SJ8-B Phototransistor High profile 124
EE-SX3070/4070 Photo-IC General purpose 134
12 mm EE-SPX415-P2 Photo-IC Use light modulation built-in Amplifier IC 168
15.0 mm EE-SX461-P11 Photo-IC Easy to mount 164
14 mm EE-SX1140 Phototransistor Wide, high profile 94
Actuator mount-
ing
--- EE-SA102 Phototransistor General purpose 108
EE-SA104 Phototransistor Compact 110
EE-SA407-P2 Photo-IC Easy to mount 166
Actuator --- EE-SA105 Phototransistor General purpose 112
EE-SA113 Phototransistor General purpose 114
Reflective 1.0 mm EE-SY124 Phototransistor Ultra-compact, general purpose 174
EE-SY125 Phototransistor Ultra-compact, surface mounting 176
EE-SY193 Phototransistor Ultra-compact, surface mounting 188
3.5 mm EE-SY171 Phototransistor Thin 186
4.0 mm EE-SY169 Phototransistor High resolution (red LED) 180
EE-SY169A Phototransistor High resolution (infrared LED) 182
EE-SY169B Phototransistor High resolution (red LED) 184
4.4 mm EE-SY113 Phototransistor Dust-proof 172
EE-SY313/413 Photo-IC Dust-proof 198
5.0 mm EE-SY110 Phototransistor General purpose 170
EE-SB5(-B) Phototransistor Screw mounting 192
EE-SF5(-B) Phototransistor Dust-proof 194
EE-SY310/410 Photo-IC General purpose 196
Sensing
method Sensing distance Model Output configuration Features Page
4Selection Gu id e
5
Microphotonic Devices
Manuscript Paper Sensors
EY3A-1051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
EY3A-1081 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
EY3A-112 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm)
Manuscript Paper Sensor (1 Beam: 50 mm)
EY3A-1051
■Dimensions
Note: All units are in millimeters unless otherwise indicated. ■Features
•Ensures higher sensitivity and external light interference resistivity
than any other photomicrosensor.
•Narrow sensing range ensures stable sensing of a variety of sens-
ing objects.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Make sure there is no icing or condensation when operating the
Sensor.
■Electrical and Optical Characteristics (Ta = 0°C to 60°C)
Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.9 maximum located at the correct sensing position of the Sensor
as shown in the optical path arrangement on page 7.
2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as
shown in the optical path arrangement on page 7.
Positioning boss Center of detector
Center of emitter
Pin no. 1
8.3dia.
3.2
+0.2
-0
dia.
7.9 dia.
3
+0
-0.2
dia.
8 dia.
0.5
15
Item Symbol Rated value
Power supply voltage VCC 7 V
Load voltage VOUT 7 V
Loa d c urre nt IOUT 10 mA
Ambient tem-
perature Operating Topr 0°C to 60°C
Storage Tstg –15°C to 70°C
Item Value Condition
Power supply voltage 5 V ±5% ---
Current consumption 50 mA max. VCC = 5 V, RL = ∞
Peak cu rrent consumption 200 mA max. VCC = 5 V, RL = ∞
Low-level outp ut voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1)
High-level output vol tag e 3.5 V min. VCC = 5 V, RL = 4.7 kΩ (see note 2)
Response delay time (High to Low) 1.5 ms max. The time required for the output to become “Lo” after placing
sensing object.
Response delay time (Low to h igh) 1.5 ms max. The time required for the output to become “Hi” after removing
sensing object.
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
30 < mm ≤ 50 ±0.8
Pin no. Remarks Name
3 G Ground (GND)
1 O Output (OUT)
2 V Power supply
(Vcc)
Unless otherwise specified, the
tolerances are as shown below.
Japan Molex 51090-0300 (crimp connector)
52484-0310 (press-fit connector)
Recommended Mating Connectors:
Be sure to read Precautions on page 27.
EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm) 7
■Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.)
(Ta =0°C to 60°C)
Note: 1. The data shown are initial data.
2. Optical darkness (OD) is defined by the following formula:
PIN (mW): Light power incident upon the document
POUT (mW): Reflected light power from the document
■Optical Path Arrangement
■Engineering Data
Item Characteristic value
Sensing density Lusterless paper with an OD of 0.9 max. (sensing distance: 50 mm) (see note)
Non-sensing distance 85 mm (from the top of the sensor), OD: 0.05
P aper sensing distance 50 mm (from the top of the sensor)
Amb ie n t il lumi na tio n Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max.
OD = − log10
POUT
PIN
2. The non-sensin
g
distance of the EY3A-1051 is determined usin
g
a
p
a
p
er with an OD of 0.05.
85 (see note 2)
Paper supporting plate
10 dia.
(see note 1) 50 (standard value)
Glass
8.9
Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1051, which is practically
determined by the diameter of the beam and its tolerance.
Distance Characteristics (Typical)
Distance (mm)
OD (value)
4.75 V
5.0 V
5.25 V
8EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm)
Manuscript Paper Sensor (1 Beam: 80 mm)
EY3A-1081
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ensures higher sensitivity and external light interference resistivity
than any other photomicrosensor.
•Narrow sensing range ensures stable sensing of a variety of sens-
ing objects.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Make sure there is no icing or condensation when operating the
Sensor.
■Electrical and Optical Characteristics (Ta = 0°C to 60°C)
Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.7 maximum located at the correct sensing position of the Sensor
as shown in the optical path arrangement on page 9.
2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as
shown in the optical path arrangement on page 9.
3 0
-0.2 dia.
Positioning boss Center of detector
Center of emitter
Pin no.1
3.2 +0.2
0dia.
7.9 dia. 8.3 dia. Item Symbol Rated value
Power supply voltage VCC 7 V
Load voltage VOUT 7 V
Loa d c urre nt IOUT 10 mA
Ambient tem-
perature Operating Topr 0°C to 60°C
Storage Tstg –15°C to 70°C
Item Value Condition
Power supply voltage 5 V ±5% ---
Current consumption 50 mA max. VCC = 5 V, RL = ∞
Peak cu rrent consumption 200 mA max. VCC = 5 V, RL = ∞
Low-level outp ut voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1)
High-level output vol tag e 3.5 V min. VCC = 5 V, RL = 4.7 kΩ (see note 2)
Response delay time (High to Low) 1.5 ms max. The time required for the output to become “Lo” after placing
sensing object.
Response delay time (Low to h igh) 1.5 ms max. The time required for the output to become “Hi” after removing
sensing object.
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
30 < mm ≤ 50 ±0.8
50 < mm ≤ 80 ±0.95
Pin no. Remarks Name
1 O Output (OUT)
2 V Power supply (Vcc)
3 G Ground (GND)
Unless otherwise specified, the
tolerances are as shown below.
Japan Molex 51090-0300 (crimp connector)
52484-0310 (press-fit connector)
Recommended Mating Connectors:
Be sure to read Precautions on page 27.
EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) 9
■Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.)
(Ta =0°C to 60°C)
Note: 1. The data shown are initial data.
2. Optical darkness (OD) is defined by the following formula:
PIN (mW):Light power incident upon the document
POUT (mW):Reflected light power from the document
■Optical Path Arrangement
Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1081, which is practically determined by the diameter of the
beam and its tolerance.
2. The non-sensing distance of the EY3A-1081 is determined using a paper with an OD of 0.05.
■Engineering Data
Item Characteristic value
Sensing density Lusterless paper with an OD of 0.7 max. (sensing distance: 80 mm) (see note)
Non-sensing distance 120 mm (from the top of the sensor), OD: 0.05
P aper sensing distance 80 mm (from the top of the sensor)
Amb ie n t il lumi na tio n Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max.
OD = − log10
POUT
PIN
10 dia. (see note 1)
Paper supporting plate Glass
120 (see note 2)
80 (Standard value)
4.75 V
5.0 V
5.25 V
Distance Characteristics (Typical)
Distance (mm)
OD (value)
10 EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm)
Manuscript Paper Sensor (1 Beam: 125 mm)
EY3A-112
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ensures higher sensitivity and external light interference resistivity
than any other photomicrosensor.
•Narrow sensing range ensures stable sensing of a variety of sens-
ing objects.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Make sure there is no icing or condensation when operating the
Sensor.
■Electrical and Optical Characteristics (Ta = 0°C to 65°C)
Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.6 maximum located at the correct sensing position of the Sensor
as shown in the optical path arrangement on page 11.
2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as
shown in the optical path arrangement on page 11.
3
0
−0.2
dia.
Two, 10 dia.
Positioning boss Center of
detector
53325-0310 (Japan Molex) Center of emitter
Pin no.1
3.2
+0.2
0
dia.
C1
Item Symbol Rated value
Power supply voltage VCC 7 V
Load voltage VOUT 7 V
Loa d c urre nt IOUT 10 mA
Ambient tem-
perature Operating Topr 0°C to 65°C
Storage Tstg –15°C to 70°C
Item Value Condition
Power supply voltage 5 V ±5% ---
Current consumption 50 mA max. VCC = 5 V, RL = ∞
Peak cu rrent consumption 200 mA max. VCC = 5 V, RL = ∞
Low-level outp ut voltage 0.6 V max. VCC = 5 V, IOL = 4 mA (see note 1)
High-level output vol tag e 3.5 V min. VCC = 5 V, RL = 4.7 kΩ (see note 2)
Response delay time (High to Low) 35 ms max. The time required for the output to become “Lo” after placing
sensing object.
Response delay time (Low to h igh) 20 ms max. The time required for the output to become “Hi” after removing
sensing object.
Dimensions Tolerance
3 mm max.
±
0.3
3 < mm ≤ 6
±
0.375
6 < mm ≤ 10
±
0.45
10 < mm ≤ 18
±
0.55
18 < mm ≤ 30
±
0.65
30 < mm ≤ 50
±
0.8
50 < mm ≤ 80
±
0.95
Pin no. Remarks Name
1 O Output (OUT)
2 V Power supply
(Vcc)
3 G Ground (GND)
Unless otherwise specified, the
tolerances are as shown below.
Japan Molex 51090-0300 (crimp connector)
52484-0310 (press-fit connector)
Recommended Mating Connectors:
Be sure to read Precautions on page 27.
EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm) 11
■Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.)
(Ta =0°C to 65°C)
Note: 1. The data shown are initial data.
2. Optical darkness (OD) is defined by the following formula:
PIN (mW): Light power incident upon the document
POUT (mW): Reflected light power from the document
■Optical Path Arrangement
■Engineering Data
Item Characteristic value
Sensing density Lusterless paper with an OD of 0.6 max. (sensing distance: 125 mm) (see note)
Non-sensing distance 185 mm (from the top of the sensor), OD: 0.05
P aper sensing distance 125 mm (from the top of the sensor)
Amb ie n t il lumi na tio n Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max.
OD = − log10
POUT
PIN
13 dia. 4 dia.
185 min.
(beam diameter)
(beam center)
Paper supporting plate Glass
125 (standard value)
8.5
(beam center)
Distance Characteristics (Estimated Lower-limit Value)
Distance (mm)
OD (value)
4.75 V
5.0 V
5.25 V
12 EY3A-112 Manuscript Paper Sensor (1 Beam: 125 mm)
13
Photomicrosensors
Transmissive Sens ors
Technical Information . . . . . . . . . . . . . . 14
Precautions . . . . . . . . . . . . . . . . . . . . . 27
Application Examples . . . . . . . . . . . . . . 30
EE-SX1018. . . . . . . . . . . . . . . . . . . . . . 32
EE-SX1023-W1 . . . . . . . . . . . . . . . . . . 34
EE-SX1031. . . . . . . . . . . . . . . . . . . . . . 36
EE-SX1035. . . . . . . . . . . . . . . . . . . . . . 38
EE-SX1041. . . . . . . . . . . . . . . . . . . . . . 40
EE-SX1042. . . . . . . . . . . . . . . . . . . . . . 42
EE-SX1046. . . . . . . . . . . . . . . . . . . . . . 44
EE-SX1049. . . . . . . . . . . . . . . . . . . . . . 46
EE-SX1055. . . . . . . . . . . . . . . . . . . . . . 48
EE-SX1057. . . . . . . . . . . . . . . . . . . . . . 50
EE-SX1061. . . . . . . . . . . . . . . . . . . . . . 52
EE-SX1070. . . . . . . . . . . . . . . . . . . . . . 54
EE-SX1071. . . . . . . . . . . . . . . . . . . . . . 56
EE-SX1081. . . . . . . . . . . . . . . . . . . . . . 58
EE-SX1082. . . . . . . . . . . . . . . . . . . . . . 60
EE-SX1088. . . . . . . . . . . . . . . . . . . . . . 62
EE-SX1096. . . . . . . . . . . . . . . . . . . . . . 64
EE-SX1103. . . . . . . . . . . . . . . . . . . . . . 66
EE-SX1105. . . . . . . . . . . . . . . . . . . . . . 68
EE-SX1106. . . . . . . . . . . . . . . . . . . . . . 70
EE-SX1107. . . . . . . . . . . . . . . . . . . . . . 72
EE-SX1108. . . . . . . . . . . . . . . . . . . . . . 76
EE-SX1109. . . . . . . . . . . . . . . . . . . . . . 80
EE-SX1115. . . . . . . . . . . . . . . . . . . . . . 84
EE-SX1128. . . . . . . . . . . . . . . . . . . . . . 86
EE-SX1131. . . . . . . . . . . . . . . . . . . . . . 88
EE-SX1137. . . . . . . . . . . . . . . . . . . . . . 92
EE-SX1140. . . . . . . . . . . . . . . . . . . . . . 94
EE-SX1235A-P2. . . . . . . . . . . . . . . . . . 96
EE-SX129. . . . . . . . . . . . . . . . . . . . . . . 98
EE-SX138. . . . . . . . . . . . . . . . . . . . . . . 100
EE-SX153 . . . . . . . . . . . . . . . . . . . . . . 102
EE-SX198 . . . . . . . . . . . . . . . . . . . . . . 104
EE-SX199 . . . . . . . . . . . . . . . . . . . . . . 106
EE-SA102 . . . . . . . . . . . . . . . . . . . . . . 108
EE-SA104 . . . . . . . . . . . . . . . . . . . . . . 110
EE-SA105 . . . . . . . . . . . . . . . . . . . . . . 112
EE-SA113 . . . . . . . . . . . . . . . . . . . . . . 114
EE-SG3/EE-SG3-B . . . . . . . . . . . . . . . 116
EE-SH3 Series. . . . . . . . . . . . . . . . . . . 118
EE-SJ3 Series . . . . . . . . . . . . . . . . . . . 120
EE-SJ5-B . . . . . . . . . . . . . . . . . . . . . . . 122
EE-SJ8-B . . . . . . . . . . . . . . . . . . . . . . . 124
EE-SV3 Series . . . . . . . . . . . . . . . . . . . 126
EE-SX298 . . . . . . . . . . . . . . . . . . . . . . 128
EE-SX301/-SX401 . . . . . . . . . . . . . . . . 130
EE-SX305/-SX405 . . . . . . . . . . . . . . . . 132
EE-SX3070/-SX4070 . . . . . . . . . . . . . . 134
EE-SX3081/-SX4081 . . . . . . . . . . . . . . 136
EE-SX3088/-SX4088 . . . . . . . . . . . . . . 138
EE-SX3133 . . . . . . . . . . . . . . . . . . . . . 140
EE-SX338 . . . . . . . . . . . . . . . . . . . . . . 142
EE-SX384/-SX484 . . . . . . . . . . . . . . . . 144
EE-SX493 . . . . . . . . . . . . . . . . . . . . . . 146
EE-SX398/498 . . . . . . . . . . . . . . . . . . . 148
EE-SX3009-P1/-SX4009-P1 . . . . . . . . 150
EE-SX4019-P2. . . . . . . . . . . . . . . . . . . 152
EE-SX4134 . . . . . . . . . . . . . . . . . . . . . 154
EE-SX4235A-P2 . . . . . . . . . . . . . . . . . 158
EE-SX3239-P2. . . . . . . . . . . . . . . . . . . 160
EE-SX460-P1. . . . . . . . . . . . . . . . . . . . 162
EE-SX461-P11. . . . . . . . . . . . . . . . . . . 164
EE-SA407-P2. . . . . . . . . . . . . . . . . . . . 166
EE-SPX415-P2 . . . . . . . . . . . . . . . . . . 168
Reflective Sensors
EE-SY110. . . . . . . . . . . . . . . . . . . . . . . 170
EE-SY113. . . . . . . . . . . . . . . . . . . . . . . 172
EE-SY124. . . . . . . . . . . . . . . . . . . . . . . 174
EE-SY125. . . . . . . . . . . . . . . . . . . . . . . 176
EE-SY169. . . . . . . . . . . . . . . . . . . . . . . 180
EE-SY169A . . . . . . . . . . . . . . . . . . . . . 182
EE-SY169B . . . . . . . . . . . . . . . . . . . . . 184
EE-SY171. . . . . . . . . . . . . . . . . . . . . . . 186
EE-SY193. . . . . . . . . . . . . . . . . . . . . . . 188
EE-SB5(-B). . . . . . . . . . . . . . . . . . . . . . 192
EE-SF5(-B). . . . . . . . . . . . . . . . . . . . . . 194
EE-SY310/-SY410 . . . . . . . . . . . . . . . . 196
EE-SY313/-SY413 . . . . . . . . . . . . . . . . 198
14 Te chnic a l In f orm ation
Technical Information
Features of Photomicrosensor s
The Photomicrosensor is a compact optical sensor that senses objects or object positions with an optical beam. The transmissive Photomicrosen-
sor and reflective Photomicrosensor are typical Photomicrosensors.
The transmissive Photomicrosensor incorporates an emitter and a transmissive that face each other as shown in Figure 1. When an object is lo-
cated in the sensing position between the emitter and the detector, the object intercepts the optical beam of the emitter, thus reducing the amount
of optical energy reaching the detector.
The reflective Photomicrosensor incorporates an emitter and a detector as shown in Figure 2. When an object is located in the sensing area of the
reflective Photomicrosensor, the object reflects the optical beam of the emitter, thus changing the amount of optical energy reaching the detector.
“Photomicrosensor” is an OMRON product name. Generally, the Photomicrosensor is called a photointerrupter.
Datasheet
■Absolute Maximum Ratings and
Electrical and Optical Characteristics
The datasheets of Photomicrosensors include the absolute
maximum ratings and electrical and optical characteristics of the
Photomicrosensors as well as the datasheets of transistors and ICs.
It is necessary to understand the difference between the absolute
maximum ratings and electrical and optical characteristics of various
Photomicrosensors.
■Absolute Maximum Ratings
The absolute maximum ratings of Photomicrosensors and other
products with semiconductors specify the permissible operating
voltage, current, temperature, and power limits of these products.
The products must be operated absolutely within these limits.
Therefore, when using any Photomicrosensor, do not ignore the
absolute maximum ratings of the Photomicrosensor, or the
Photomicrosensor will not operate precisely. Furthermore, the
Photomicrosensor may be deteriorate or become damaged, in which
case OMRON will not be responsible.
Practically, Photomicrosensors should be used so that there will be
some margin between their absolute maximum ratings and actual
operating conditions.
■Electrical and Optical Characteristics
The electrical and optical characteristics of Photomicrosensors
indicate the performance of Photomicrosensors under certain
conditions. Most items of the electrical and optical characteristics
are indicated by maximum or minimum values. OMRON usually sells
Photomicrosensors with standard electrical and optical
characteristics. The electrical and optical characteristics of
Photomicrosensors sold to customers may be changed upon
request. All electrical and optical characteristic items of
Photomicrosensors indicated by maximum or minimum values are
checked and those of the Photomicrosensors indicated by typical
values are regularly checked before shipping so that OMRON can
guarantee the performance of the Photomicrosensors.
In short, the absolute maximum ratings indicate the permissible
operating limits of the Photomicrosensors and the electrical
and optical characteristics indicate the maximum p erformance
of the Photomicrosensors.
Figure 1. Transmissive Photomicrosensor Figure 2. Reflective Photomicrosensor
LED Phototransistor LED Phototransistor
Technical Information 15
Terminology
The terms used in the datasheet of each Photomicrosensor with a phototransistor output circuit or a photo IC output circuit are explained below.
■Phototransistor Output Photomicrosensor
■Phototransistor/Photo IC Output Photomicrosensor
Symbol Item Definition
IFP Pulse forward current The maximum pulse current that is allowed to flow continuously from the anode to cathode of an LED
under a specified temperature, a repetition period, and a pulse width condition.
ICCollector current The current that flows to the collector junction of a phototransistor.
PCCollector dissipation The maximum power that is consumed by the collector junction of a phototransistor.
IDDark current The current leakage of the phototransistor when a specified bias voltage is imposed on the phototrans-
istor so that the polarity of the collector is positive and that of the emitter is negative on condition that
the illumination of the Photomicrosensor is 0 lx.
ILLight c u r r e nt The collector current of a phototransistor under a specified input current condition and at a specified
bias voltage.
VCE (sat) Collector-emitter saturated
voltage The ON-state voltage between the collector and emitter of a phototransistor under a specified bias cur-
rent condition.
ILEAK Leakage current The collector current of a phototransistor under a specified input current condition and at a specified
bias voltage when the phototransistor is not exposed to light.
tr Rising time The time required for the leading edge of an output waveform of a phototransistor to rise from 10% to
90% of its final value when a specified input current and bias condition is given to the phototransistor.
tf Falling time The time required for the trailing edge of an output waveform of a phototransistor to decrease from 90%
to 10% of its final value when a specified input current and bias condition is given to the phototransistor.
VCEO Collector-emitter voltage The maximum positive voltage that can be applied to the collector of a phototransistor with the emitter
at reference potential.
VECO Emitter-collector voltage The maximum positive voltage that can be applied to the emitter of a phototransistor with the collector
at reference potential.
Symbol Item Definition
IFForward current The maximum DC voltage that is allowed to flow continuously from the anode of the LED to the cathode
of the LED under a specified temperature condition.
VRReverse voltage The maximum negative voltage that can be applied to the anode of the LED with the cathode at refer-
ence potential.
VCC Supply voltage The maximum positive voltage that can be applied to the voltage terminals of the photo IC with the
ground terminal at reference potential.
VOUT Output voltage The maximum positive voltage that can be applied to the output terminal with the ground terminal of
the photo IC at reference potential.
IOUT Output current The maximum current that is allowed to flow in the collector junction of the output transistor of the photo
IC.
POUT Output permissible dissi-
pation The maximum power that is consumed by the collector junction of the output transistor of the photo IC.
VFForward voltage The voltage drop across the LED in the forward direction when a specified bias current is applied to the
photo IC.
IRReverse current The reverse leakage current across the LED when a specified negative bias is applied to the anode
with the cathode at reference potential.
VOL Outpu t low voltag e The voltage drop in the output of the photo IC when the IC output is turned ON under a specified volt-
age and output current applied to the photo IC.
VOH Outpu t high volta ge The voltage output by the photo IC when the IC output is turned OFF under a specified supply voltage
and bias condition given to the photo IC.
ICC Current consumption The current that will flow into the sensor when a specified positive bias voltage is applied from the pow-
er source with the ground of the photo IC at reference potential.
IFT
(IFT OFF)LED current when output is
turned OFF The forward LED current value that turns OFF the output of the photo IC when the forward current to
the LED is increased under a specified voltage applied to the photo IC.
IFT
(IFT ON)LED current when output is
turned ON The forward LED current value that turns ON the output of the photo IC when the forward current to the
LED is increased under a specified voltage applied to the photo IC.
∆H Hysteresis The difference in forward LED current value, expressed in percentage, calculated from the respective
forward LED currents when the photo IC is turned ON and when the photo IC is turned OFF.
f Response frequency The number of revolutions of a disk with a specified shape rotating in the light path, expressed by the
number of pulse strings during which the output logic of the photo IC can be obtained under a specified
bias condition given to the LED and photo IC (the number of pulse strings to which the photo IC can
respond in a second).
16 Te chnic a l In f orm ation
Design
The following explains how systems using Photomicrosensors must
be designed.
■Emitter
Characteristics of Emitter
The emitter of each Photomicrosensor has an infrared LED or red
LED. Figure 3 shows how the LED forward current characteristics of
the EE-SX1018, which has an emitter with an infrared LED, and
those of the EE-SY169B, which has an emitter with a red LED, are
changed by the voltages imposed on the EE-SX1018 and EE-
SY169B. As shown in this figure, the LED forward current
characteristics of the EE-SX1018 greatly differ from those of the EE-
SY169B. The LED forward current characteristics of any
Photomicrosensor indicate how the voltage drop of the LED
incorporated by the emitter of the Photomicrosensor is changed by
the LED’s forward current (IF) flowing from the anode to cathode.
Figure 3 shows that the forward voltage (VF) of the red LED is higher
than that of the infrared LED.
The forward voltage (VF) of the infrared LED is approximately 1.2 V
and that of the red LED is approximately 2 V provided that the
practical current required by the infrared LED and that required by
the red LED flow into these LEDs respectively.
Drivin g C urren t Level
It is especially important to decide the level of the forward current (IF)
of the emitter incorporated by any Photomicrosensor. The forward
current must not be too large or too small.
Before using any Photomicrosensor, refer to the absolute maximum
ratings in the datasheet of the Photomicrosensor to find the emitter’s
forward current upper limit. For example, the first item in the absolute
maximum ratings in the datasheet of the EE-SX1018 shows that the
forward current (IF) of its emitter is 50 mA at a Ta (ambient
temperature) of 25°C. This means the forward current (IF) of the
emitter is 50 mA maximum at a Ta of 25°C. As shown in Figure 4, the
forward current must be reduced according to changes in the
ambient temperature.
Figure 4 indicates that the forward current (IF) is approximately
27 mA maximum if the EE-SX1018 is used at a Ta of 60°C. This
means that a current exceeding 27 mA must not flow into the emitter
incorporated by the EE-SX1018 at a Ta of 60°C.
As for the lower limit, a small amount of forward current will be
required because the LED will not give any output if the forward
current IF is zero.
In short, the forward current lower limit of the emitter of any
Photomicrosensor must be 5 mA minimum if the emitter has an
infrared LED and 2 mA minimum if the emitter has a red LED. If the
forward current of the emitter is too low, the optical output of the
emitter will not be stable. To find the ideal forward current value of
the Photomicrosensor, refer to the light current (IL) shown in the
datasheet of the Photomicrosensor. The light current (IL) indicates
the relationship between the forward current (IF) of the LED
incorporated by the Photomicrosensor and the output of the LED.
The light current (IL) is one of the most important characteristics. If
the forward current specified by the light current (IL) flows into the
emitter, even though there is no theoretical ground, the output of the
emitter will be stable. This characteristic makes it possible to design
the output circuits of the Photomicrosensor easily. For example, the
datasheet of EE-SX1018 indicates that a forward current (IF) of 20
mA is required.
Figure 3. LED Forward Current vs. Forward Voltage
Characteristics (Typical)
Forward V oltage VF
Forward voltage VF (V)
Forward current IF (mA)
EE-SX1018 (infrared LED)
EE-SY169B (red LED)
2.
4
Figure 4. Temperature Characteristics (EE-SX1018)
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward current IF (mA)
PC
IF
Technical Information 17
Design Method
The following explains how the constants of a Photomicrosensor
must be determined. Figure 5 shows a basic circuit that drives the
LED incorporated by a Photomicrosensor.
The basic circuit absolutely requires a limiting resistor (R). If the LED
is imposed with a forward bias voltage without the limiting resistor,
the current of the LED is theoretically limitless because the forward
impedance of the LED is low. As a result the LED will burn out.
Users often ask OMRON about the appropriate forward voltage to be
imposed on the LED incorporated by each Photomicrosensor model
that they use. There is no upper limit of the forward voltage imposed
on the LED provided that an appropriate limiting resistor is
connected to the LED. There is, however, the lower limit of the
forward voltage imposed on the LED. As shown in Figure 3, the
lower limit of the forward voltage imposed on the LED must be at
least 1.2 to 2 V, or no forward current will flow into the LED. The
supply voltage of a standard electronic circuit is 5 V minimum.
Therefore, a minimum of 5 V should be imposed on the LED. A
system incorporating any Photomicrosensor must be designed by
considering the following.
1. Forward current (IF)
2. Limiting resistor (R) (refer to Figure 5)
As explained above, determine the optimum level of the forward
current (IF) of the LED. The forward current (IF) of the EE-SX1018,
for example, is 20 mA. Therefore, the resistance of the limiting
resistor connected to the LED must be decided so that the forward
current of the LED will be approximately 20 mA. The resistance of
the limiting resistor is obtained from the following.
In this case 5 V must be substituted for the supply voltage (VCC). The
forward voltage (VF) obtained from Figure 3 is approximately 1.2 V
when the forward current (IF) of the LED is 20 mA. Therefore, the
following resistance is obtained.
The forward current (IF) varies with changes in the supply voltage
(VCC), forward voltage (VF), or resistance. Therefore, make sure that
there is some margin between the absolute maximum ratings and
the actual operating conditions of the Photomicrosensor.
The positions of the limiting resistor (R) and the LED in Figure 5 are
interchangeable. If the LED is imposed with reverse voltages
including noise and surge voltages, add a rectifier diode to the circuit
as shown in Figure 6. LEDs can be driven by pulse voltages, the
method of which is, however, rarely applied to Photomicrosensors.
In short, the following are important points required to operate any
Photomicrosensor.
A forward voltage (VF) of approximately 1.2 V is required if the
Photomicrosensor has an infrared LED and a forward voltage (VF) of
approximately 2 V is required if the Photomicrosensor has a red
LED.
The most ideal level of the forward current (IF) must flow into the LED
incorporated by the Photomicrosensor.
Decide the resistance of the limiting resistor connected to the LED
after deciding the value of the forward current (IF).
If the LED is imposed with a reverse voltage, connect a rectifier
diode to the LED in parallel with and in the direction opposite to the
direction of the LED.
R = V
CC
− V
F
I
F
R = = = 190 Ω
= approx. 180 to 220 Ω
VCC − VF
IF
5 to 1.2 V
20 mA
Figure 5. Basic Circuit
GND
(g
round
)
VCC
IF
R
VF
Figure 6. Reverse Voltage Protection Circuit
18 Te chnic a l In f orm ation
■Design of Systems Incorporating
Photomicrosensors (1)
Phototransistor Output
Characteristics of Detecto r Element
The changes in the current flow of the detector element with and
without an optical input are important characteristics of a detector
element. Figure 7 shows a circuit used to check how the current flow
of the phototransistor incorporated by a Photomicrosensor is
changed by the LED with or without an appropriate forward current
(IF) flow, provided that the ambient illumination of the
Photomicrosensor is ideal (i.e., 0 lx). When there is no forward
current (IF) flowing into the LED or the optical beam emitted from the
LED is intercepted by an opaque object, the ammeter indicates
several nanoamperes due to a current leaking from the
phototransistor. This current is called the dark current (ID). When the
forward current (IF) flows into the LED with no object intercepting the
optical beam emitted from the LED, the ammeter indicates several
milliamperes. This current is called the light current (IL).
The difference between the dark current and light current is 106
times larger as shown below.
•When optical beam to the phototransistor is interrupted
Dark current ID: 10–9 A
•When optical beam to the phototransistor is not interrupted
Light current IL: 10–3 A
The standard light current of a phototransistor is 106 times as large
as the dark current of the phototransistor. This difference in current
can be applied to the sensing of a variety of objects.
The ambient illumination of the LED and phototransistor
incorporated by the Photomicrosensor in actual operation is not 0 lx.
Therefore, a current larger than the dark current of the
phototransistor will flow into the phototransistor when the optical
beam emitted from the LED is interrupted. This current is rather
large and must not be ignored if the Photomicrosensor has a
photoelectric Darlington transistor, which is highly sensitive, as the
detector element of the Photomicrosensor. The dark current of the
phototransistor incorporated by any reflective Photomicrosensor
flows if there is no reflective object in the sensing area of the
reflective Photomicrosensor. Furthermore, due to the structure of the
reflective Photomicrosensor, a small portion of the optical beam
emitted from the LED reaches the phototransistor after it is reflected
inside the reflective Photomicrosensor. Therefore, the dark current
and an additional current will flow into the phototransistor if there is
no sensing object in the sensing area. This additional current is
called leakage current (ILEAK). The leakage current of the
phototransistor is several hundred nanoamperes and the dark
current of the phototransistor is several nanoamperes.
The dark current temperature and light current temperature
dependencies of the phototransistor incorporated by any
Photomicrosensor must not be ignored. The dark current
temperature dependency of the phototransistor increases when the
ambient temperature of the Photomicrosensor in operation is high or
the Photomicrosensor has a photoelectric Darlington transistor as
the detector element of the Photomicrosensor. Figure 8 shows the
dark current temperature dependency of the phototransistor
incorporated by the EE-SX1018.
Due to the temperature dependency of the phototransistor, the light
current (IL) of the phototransistor as the detector element of the
Photomicrosensor increases according to a rise in the ambient
temperature. As shown in Figure 9, however, the output of the LED
decreases according to a rise in the ambient temperature due to the
temperature dependency of the LED. An increase in the light current
of the phototransistor is set off against a decrease in the output of
the LED and consequently the change of the output of the
Photomicrosensor according to the ambient temperature is
comparatively small. Refer to Figure 10 for the light current
temperature dependency of the phototransistor incorporated by the
EE-SX1018.
The light current temperature dependency shown in Figure 10 is,
however, a typical example. The tendency of the light current
temperature dependency of each phototransistor is indefinite. This
means the temperature compensation of any Photomicrosensor is
difficult.
Figure 7. Measuring Circuit
Ammeter
Figure 8. Dark Current vs. Ambient Temperature
Characteristics (Typical) (EE-SX1018)
Ambient temperature Ta (°C)
Dark current ID
V
CE
= 10 V
0 lx
Technical Information 19
Changes in Characteristics
The following explains the important points required for the
designing of systems incorporating Photomicrosensors by
considering worst case design technique. Worst case design
technique is a method to design systems so that the
Photomicrosensors will operate normally even if the characteristics
of the Photomicrosensors are at their worst. A system incorporating
any Photomicrosensor must be designed so that they will operate
even if the light current (IL) of the phototransistor is minimal and the
dark current (ID) and leakage current of the phototransistor are
maximal. This means that the system must be designed so that it will
operate even if the difference in the current flow of the
phototransistor between the time that the Photomicrosensor senses
an object and the time that the Photomicrosensor does not sense
the object is minimal.
The worst light current (IL) and dark current (ID) values of the
phototransistor incorporated by any Photomicrosensor is specified in
the datasheet of the Photomicrosensor. (These values are specified
in the specifications either as the minimum value or maximum
value.)
Table 1 shows the dark current (ID) upper limit and light current (IL)
lower limit values of the phototransistors incorporated by a variety of
Photomicrosensors.
Systems must be designed by considering the dark current (ID)
upper limit and light current (IL) lower limit values of the
phototransistors. Not only these values but also the following factors
must be taken into calculation to determine the upper limit of the
dark current (ID) of each of the phototransistors.
•External light interference
•Temperature rise
•Power supply voltage
•Leakage current caused by internal light reflection if the systems
use reflective Photomicrosensors.
The above factors increase the dark current (ID) of each
phototransistor.
As for the light current (IL) lower limit of each phototransistor, the
following factors must be taken into calculation.
•Temperature change
•Secular change
The above factors decrease the light current (IL) of each
phototransistor.
Table 2 shows the increments of the dark current (ID) and the
decrements of the light current (ID) of the phototransistors.
Therefore, if the EE-SX1018 is operated at a Ta of 60°C maximum
and a VCC of 10 V for approximately 50,000 hours, for example, the
dark current (ID) of the phototransistor incorporated by the EE-
SX1018 will be approximately 4 µA and the light current (IL) of the
phototransistor will be approximately 0.5 mA because the dark
current (ID) of the phototransistor at a Ta of 25°C is 200
nanoamperes maximum and the light current (IL) of the
phototransistor at a Ta of 25°C is 0.5 mA minimum.
Table 3 shows the estimated worst values of a variety of
Photomicrosensors, which must be considered when designing
systems using these Photomicrosensors.
The dispersion of the characteristics of the Photomicrosensors must
be also considered, which is explained in detail later. The light
current (IL) of the phototransistor incorporated by each reflective
Photomicrosensor shown in its datasheet was measured under the
standard conditions specified by OMRON for its reflective
Photomicrosensors. The light current (IL) of any reflective
Photomicrosensor greatly varies with its sensing object and sensing
distance.
Figure 9. LED and Phototransistor Temperature
Characteristics (Typical)
Ambient temperature Ta (°C)
Relative value (%)
Figure 10. Relative Light Current vs. Ambient
Temperature Characteristics (EE-SX1018)
Relative light current (%)
Ambient temperature Ta (°C)
Measurement condition
I
F
= 20 mA
V
CE
= 5 V
LED optical
output
A relative value of 100 is
based on a Ta of 25°C.
Phototransistor light
current
20 Te chnic a l In f orm ation
Table 1. Rated Dark Current (ID) and Light Current (IL) Values
Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors.
Table 2. Dependency of Detector Elements on Various Factors
Model Upper limit (ID) L ower limit (IL) Condition
EE-SG3(-B) 200 nA 2 mA IF = 15 mA
EE-SX1018, -SX1055
EE-SX1041, -SX1042
EE-SX1070, -SX1071
EE-SX198, -SX199
200 nA 0.5 mA IF = 20 mA
EE-SB5(-B)
EE-SF5(-B)
EE-SY110
200 nA 0.2 mA IF = 20 mA (see note)
Condition VCE = 10 V, 0 lx
Ta = 25°C
VCE = 10 V
Ta = 2 5 °C
---
Elements Phototransistor Photo-Darlington transistor
Dark current IDExternal light interference To be checked using experiment To be checked using experiment
Temperature rise Increased by approximately 10 times with
a temperature rise of 25°C.
Increased by approximately 28 times with
a temperature rise of 25°C.
Supply voltage See Figure 11. See Figure 12.
Light c ur rent ILT emperatur e change Approximately –20% to 10% Approximately –20% to 10%
Secular change
(20,000 to 50,000 hours)
Note: For an infrared LED.
Decreased to approximately one-half of
the initial value considering the tempera-
ture changes of the element.
Decreased to approximately one-half of
the initial value considering the tempera-
ture changes of the element.
Figure 11. Dark Current Imposed Voltage Dependency
(Typical) (EE-SX1018)
Collector-emitter voltage VCE (V)
Relative dark current ID (%)
A relative dark current value of 100
is based on a Ta of 25°C and a VCE
of 10 V.
Technical Information 21
Table 3. Estimated Worst Values of a Variety of Photomicrosensors
Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors with an Infrared
LED.
Design of Basic Circu itry
The following explains the basic circuit incorporated by a typical
Photomicrosensor and the important points required for the basic
circuit.
The flowing currents (i.e., IL and ID) of the phototransistor
incorporated by the Photomicrosensor must be processed to obtain
the output of the Photomicrosensor. Refer to Figure 13 for the basic
circuit. The light current (IL) of the phototransistor will flow into the
resistor (RL) if the phototransistor receives an optical input and the
dark current (ID) and leakage current of the phototransistor will flow
into the resistor (RL) if the phototransistor does not receive any
optical input. Therefore, if the phototransistor receives an optical
input, the output voltage imposed on the resistor (RL) will be
obtained from the following.
IL x RL
If the phototransistor does not receive any optical input, the output
voltage imposed on the resistor (RL) will be obtained from the
following.
(ID + leakage current) x RL
The output voltage of the phototransistor is obtained by simply
connecting the resistor (RL) to the phototransistor. For example, to
obtain an output of 4 V minimum from the phototransistor when it is
ON and an output of 1 V maximum when the phototransistor is OFF
on condition that the light current (IL) of the phototransistor is 1 mA
and the leakage current of the phototransistor is 0.1 mA, and these
are the worst light current and leakage current values of the
phototransistor, the resistance of the resistor (RL) must be
approximately 4.7 kΩ. Then, an output of 4.7 V (i.e., 1 mA x 4.7 kΩ)
will be obtained when the phototransistor is ON and an output of
0.47 V (i.e., 0.1 mA x 4.7 kΩ) will be obtained when the
phototransistor is OFF. Practically, the output voltage of the
phototransistor will be more than 4.7 V when the phototransistor is
ON and less than 0.47 V when the phototransistor is OFF because
the above voltage values are based on the worst light current and
leakage current values of the phototransistor. The outputs obtained
from the phototransistor are amplified and input to ICs to make
practical use of the Photomicrosensor.
Model Estimated worst va lue (ID) Estimated worst value (IL) Condition
EE-SG3(-B) 4 nA 1 mA IF = 15 mA
EE-SX1018, -SX1055
EE-SX1041, -SX1042
EE-SX1070, -SX1071
EE-SX198, -SX199
4 nA 0.25 mA IF = 20 mA
EE-SB5(-B)
EE-SF5(-B)
EE-SY110
4 nA 0.1 mA IF = 20 mA (see note)
Condition VCE = 10 V, 0 lx
Ta = 60°C
VCE = 10 V,
Operating hours = 50,000 to
100,000 hrs
Ta = Topr
---
Figure 13. Basic Circuit
Figure 14. Output Example
V
CC
= 10 V
R
L
= 4.7 kΩ
Output voltag
e
EE-SX1018
Output
or
22 Te chnic a l In f orm ation
Design of Applied Circuit
The following explains the designing of the applied circuit shown in
Figure 15.
The light current (IL) of the phototransistor flows into R1 and R2 when
the phototransistor receives the optical beam emitted from the LED.
Part of the light current (IL) will flow into the base and emitter of Q1
when the voltage imposed on R2 exceeds the bias voltage (i.e.,
approximately 0.6 to 0.9 V) imposed between the base and emitter
of the transistor (Q1). The light current flowing into the base turns Q1
ON. A current will flow into the collector of Q1 through R3 when Q1 is
ON. Then, the electric potential of the collector will drop to a low
logic level. The dark current and leakage current of the
phototransistor flow when the optical beam emitted from the LED is
intercepted. The electric potential of the output of the phototransistor
(i.e., (ID + leakage current) x R2) is, however, lower than the bias
voltage between the base and emitter of Q1. Therefore, no current
will flow into the base of Q1 and Q1 will be OFF. The output of Q1 will
be at a high level. As shown in Figure 16, when the phototransistor is
ON, the phototransistor will be seemingly short-circuited through the
base and emitter of the Q1, which is equivalent to a diode, and if the
light current (IL) of the phototransistor is large and R1 is not
connected to the phototransistor, the light current (IL) will flow into Q1
and the collector dissipation of the phototransistor will be
excessively large.
The following items are important when designing the above applied
circuit:
•The voltage output (i.e., IL x R2) of the phototransistor receiving the
optical beam emitted from the LED must be much higher than the
bias voltage between the base and emitter of Q1.
•The voltage output (i.e., (ID + leakage current) x R2) of the pho-
totransistor not receiving the optical beam emitted from the LED
must be much lower than the bias voltage between the base and
emitter of Q1.
Therefore, it is important to determine the resistance of R2. Figure
17 shows a practical applied circuit example using the EE-SX1018
Photomicrosensor at a supply voltage (VCC) of 5V to drive a 74-
series TTL IC. This applied circuit example uses R1 and R2 with
appropriate resistance values.
Cal culation of R 2
The resistance of R2 should be decided using the following so that
the appropriate bias voltage (VBE(ON)) between the base and
emitter of the transistor (Q1) to turn Q1 ON will be obtained.
The bias voltage (VBE(ON)) between the base and emitter of Q1 is
approximately 0.8 V and the base current (IB) of Q1 is approximately
20 µA if Q1 is a standard transistor controlling small signals. The
estimated worst value of the light current (IL) of the phototransistor is
0.25 mA according to Table 3.
Therefore, the following is obtained.
R2 must be larger than the above result. Therefore, the actual
resistance of R2 must be two to three times as large as the above
result. In the above applied circuit example, the resistance of R2 is
10 kΩ.
Verification of R2 Value
The resistance of R2 obtained from the above turns Q1 ON. The
following explains the way to confirm whether the resistance of R2
obtained from the above can turns Q1 OFF as well. The condition
required to turn Q1 OFF is obtained from the following.
(ID + α) x R2 < VBE(OFF)
Substitute 10 kΩ for R2, 4 µA for the dark current (ID) according to
Table 3, and 10 µA for the leakage current on the assumption that
the leakage current is 10 µA in formula 3. The following is obtained.
The above result verifies that the resistance of R2 satisfies the
condition required to turn Q1 OFF.
If the appropriateness of the resistance of R2 has been verified, the
design of the circuit is almost complete.
Figure 15. Applied Circuit
Figure 16. Equivalent Circuit
Output
EE-SX1018
Figure 17. Applied Circuit Example
74-series TTL IC
V
CC
= 5 V
EE-SX1018
4.7 kW
R3
R
1
200 Ω
I
C1
R
2
10 kΩ
IC1 × R2 > VBE(ON)
IC1 = IL − IB
∴(IL − IB) x R2 > VBE(ON)
IL − IB
VBE(ON)
∴R2 >
R2 > = approx. 3.48 kΩ
0.8 V
0.25 mA − 20 µA
(ID + a) × R2 > VBE(ON)
(4 µA + 10 µA) × 10 kΩ = 0.140 V
VBE(OFF) = 0.4 V
∴0.140 V < 0.4 V
Technical Information 23
R1
As shown in Figure 16, when the phototransistor is ON, the
phototransistor will be seemingly short-circuited through the base
and emitter of the Q1, and if the light current (IL) of the
phototransistor is large and R1 is not connected to the
phototransistor, the light current will flow into Q1 and the collector
dissipation of the phototransistor will be excessively large. The
resistance of R1 depends on the maximum permissible collector
dissipation (PC) of the phototransistor, which can be obtained from
the datasheet of the Photomicrosensor. The resistance of R1 of a
phototransistor is several hundred ohms. In the above applied circuit
example, the resistance of R1 is 200 Ω.
If the resistance of R1 is determined, the design of the circuit is
complete.
It is important to connect a transistor to the phototransistor
incorporated by the Photomicrosensor to amplify the output of the
phototransistor, which increases the reliability and stability of the
Photomicrosensor. Such reliability and stability of the
Photomicrosensor cannot be achieved if the output of the
phototransistor is not amplified. The response speed and other
performance characteristics of the circuit shown in Figure 15 are far
superior to those of the circuit shown in Figure 13 because the
apparent impedance (i.e., load resistance) of the Photomicrosensor
is determined by R1, the resistance of which is comparatively small.
Recently, Photomicrosensors that have photo IC amplifier circuits
are increasing in number because they are easy to use and make it
possible to design systems using Photomicrosensors without
problem.
■Design of Systems Incorporating
Photomicrosensors (2)
Photo IC Output
Figure 18 shows the circuit configuration of the EE-SX301 or EE-
SX401 Photomicrosensor incorporating a photo IC output circuit.
The following explains the structure of a typical Photomicrosensor
with a photo IC output circuit.
LED Forward Current (IF) Sup p ly Circuit
The LED in the above circuitry is an independent component, to
which an appropriate current must be supplied from an external
power supply. This is the most important item required by the
Photomicrosensor.
It is necessary to determine the appropriate forward current (IF) of
the LED that turns the photo IC ON. If the appropriate forward
current is determined, the Photomicrosensor can be easily used by
simply supplying power to the detector circuitry (i.e., the photo IC).
Refer to the datasheet of the Photomicrosensor to find the current of
the LED turning the photo IC ON. Table 4 is an extract of the
datasheet of the EE-SX301/EE-SX401.
Table 4. Abstract of Characteristics
To design systems incorporating EE-SX301 or EE-SX401
Photomicrosensors, the following are important points.
•A forward current equivalent to or exceeding the IFTOFF value must
flow into the LED incorporated by each EE-SX301 Photomicrosen-
sors.
•A forward current equivalent to or exceeding the IFTON value must
flow into the LED incorporated by the EE-SX401 Photomicrosen-
sors.
The IFTON value of the EE-SX301 is 8 mA maximum and so is the IFON
value of the EE-SX401. The forward current (IF) of LED incorporated
by the EE-SX301 in actual operation must be 8 mA or more and so
must the actual forward current of (IF) the LED incorporated by the
EE-SX401 in actual operation. The actual forward currents of the
LEDs incorporated by the EE-SX301 and EE-SX401 are limited by
their absolute maximum forward currents respectively. The upper
limit of the actual forward current of the LED incorporated by the EE-
SX301 and that of the LED incorporated by the EE-SX401 must be
decided according Figure 19, which shows the temperature
characteristics of the EE-SX301 and EE-SX401. The forward current
(IF) of the EE-SX301 must be as large as possible within the
absolute maximum forward current and maximum ambient
temperature shown in Figure 19 and so must be the forward current
(IF) of the EE-SX401. The forward current (IF) of the EE-SX301 or
that of the EE-SX401 must not be close to 8 mA, otherwise the
photo IC of the EE-SX301 or that of the EE-SX401 may not operate
if there is any ambient temperature change, secular change that
reduces the optical output of the LED, or dust sticking to the LED.
The forward current (IF) values of the EE-SX301 and the EE-SX401
in actual operation must be twice as large as the IFOFF values of the
EE-SX301 and EE-SX401 respectively. Figure 20 shows the basic
circuit of a typical Photomicrosensor with a photo IC output circuit.
If the Photomicrosensor with a photo IC output circuit is used to drive
a relay, be sure to connect a reverse voltage absorption diode (D) to
the relay in parallel as shown in Figure 21.
Figure 18. Circuit Configuration
Voltage
stabilizer
Temperature
compensation
preamplifier
Schmitt
switching
circuit Output
transistor
Input
(GaAs infrared LED)
Output (Si photo IC)
OUT
+
-
A
K
Item Symbol EE-SX301, -SX401
Value Condition
LED current when output
is turned OFF (EE-SX301)
IFTOFF 8 mA max. VCC = 4.5 to 16 V
Ta = 2 5 °C
LED current when output
is turned ON (EE-SX401)
IFTON
24 Te chnic a l In f orm ation
Detector Circuit
Supply a voltage within the absolute maximum supply voltage to the
positive and negative terminals of the photo IC circuit shown in
Figure 18 and obtain a current within the IOUT value of the output
transistor incorporated by the photo IC circuit.
Precautions
The following provides the instructions required for the operation of
Photomicrosensors.
■Transmissive Photomicrosensor
Incorporating Phototransistor Output
Circuit
When using a transmissive Photomicrosensor to sense the following
objects, make sure that the transmissive Photomicrosensor operates
properly.
•Highly permeable objects such as paper, film, and plastic
•Objects smaller than the size of the optical beam emitted by the
LED or the size of the aperture of the detector.
The above objects do not fully intercept the optical beam emitted by
the LED. Therefore, some part of the optical beam, which is
considered noise, reaches the detector and a current flows from the
phototransistor incorporated by the detector. Before sensing such
type of objects, it is necessary to measure the light currents of the
phototransistor with and without an object to make sure that the
transmissive Photomicrosensor can sense objects without being
interfered by noise. If the light current of the phototransistor sensing
any one of the objects is IL(N) and that of the phototransistor sensing
none of the objects is IL(S), the signal-noise ratio of the
phototransistor due to the object is obtained from the following.
S/N = IL(S)/IL(N)
The light current (IL) of the phototransistor varies with the ambient
temperature and secular changes. Therefore, if the signal-noise ratio
of the phototransistor is 4 maximum, it is necessary to pay utmost
attention to the circuit connected to the transmissive
Photomicrosensor so that the transmissive Photomicrosensor can
sense the object without problem. The light currents of
phototransistors are different to one another. Therefore, when
multiple transmissive Photomicrosensors are required, a variable
resistor must be connected to each transmissive Photomicrosensor
as shown in Figure 22 if the light currents of the phototransistors
greatly differ from one another.
The optical beam of the emitter and the aperture of the detector
must be as narrow as possible. An aperture each can be attached to
the emitter and detector to make the optical beam of the emitter and
the aperture of the detector narrower. If apertures are attached to
both the emitter and detector, however, the light current (IL) of the
phototransistor incorporated by the detector will decrease. It is
desirable to attach apertures to both the emitter and detector. If an
aperture is attached to the detector only, the transmissive
Photomicrosensor will have trouble sensing the above objects when
they pass near the emitter.
Figure 19. Forward Current vs. Ambient Tempera
ture Characteristics (EE-SX301/-SX401)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current I
F
(mA)
I
F
• P
C
Figure 20. Basic Circuit
Figure 21. Connected to Inductive Load
Relay
GND
V
CC
Load
GND
V
CC
OUT
Figure 22. Sensitivity Adjustment
Output
GND
VCC
Figure 23. Aperture Exampl
e
Aperture
Technical Information 25
When using the transmissive Photomicrosensor to sense any object
that vibrates, moves slowly, or has highly reflective edges, make
sure to connect a proper circuit which processes the output of the
transmissive Photomicrosensor so that the transmissive
Photomicrosensor can operate properly, otherwise the transmissive
Photomicrosensor may have a chattering output signal as shown in
Figure 24. If this signal is input to a counter, the counter will have a
counting error or operate improperly. To protect against this, connect
a 0.01- to 0.02-µF capacitor to the circuit as shown in Figure 25 or
connect a Schmitt trigger circuit to the circuit as shown in Figure 26.
■Reflective Photomicrosensor
Incorporating Phototransistor Output
Circuit
When using a reflective Photomicrosensor to sense objects, pay
attention to the following so that the reflective Photomicrosensor
operates properly.
•External light interference
•Background condition of sensing objects
•Output level of the LED
The reflective Photomicrosensor incorporates a detector element in
the direction shown in Figure 27. Therefore, it is apt to be affected by
external light interference. The reflective Photomicrosensor,
therefore, incorporates a filter to intercept any light, the wavelength
of which is shorter than a certain wavelength, to prevent external
light interference. The filter does not, however, perfectly intercept the
light. Refer to Figure 28 for the light interception characteristics of
filters. A location with minimal external light interference is best
suited for the reflective Photomicrosensor.
With regard to the background conditions, the following description is
based on the assumption that the background is totally dark.
Figure 29 shows that the optical beam emitted from the LED
incorporated by a reflective Photomicrosensor is reflected by a
sensing object and background object. The optical beam reflected
by the background object and received by the phototransistor
incorporated by the detector is considered noise that lowers the
signal-noise ratio of the phototransistor. If any reflective
Photomicrosensor is used to sense paper passing through the
sensing area of the reflective Photomicrosensor on condition that
there is a stainless steel or zinc-plated object behind the paper, the
light current (IL(N)) of the phototransistor not sensing the paper may
be larger than the light current (IL(S)) of phototransistor sensing the
paper, in which case remove the background object, make a hole
larger than the area of the sensor surface in the background object
as shown in Figure 30, coat the surface of the background object
with black lusterless paint, or roughen the surface of the
background. Most malfunctions of a reflective Photomicrosensor are
caused by an object located behind the sensing objects of the
reflective Photomicrosensor.
Unlike the output (i.e., IL) of any transmissive Photomicrosensor, the
Figure 24. Chattering Output Signal
Figure 25. Chattering Prevention (1)
Figure 26. Chattering Prevention (2)
Output
Chattering
output
V
CC
GND
Output
Schmitt trigger circuit (IC)
V
CC
GND
Output
V
CC
GND
Figure 27. Configuration of Reflective Photomicrosensor
Emitter element
Housing
Object
Detector element
Figure 28. Light Interception Characteristics of Filters
Permeability (%)
Wavelength l (nm)
EE-SF5
EE-SB5
Figure 29. Influence of Background Object
Sensor
Sensing object
Background object
26 Te chnic a l In f orm ation
light current (IL) of a reflective Photomicrosensor greatly varies
according to sensing object type, sensing distance, and sensing
object size.
The light current (IL) of the phototransistor incorporated by the
transmissive Photomicrosensor is output when there is no sensing
object in the sensing groove of the transmissive Photomicrosensor.
On the other hand, the light current (IL) of the phototransistor
incorporated by the reflective Photomicrosensor is output when
there is a standard object specified by OMRON located in the
standard sensing distance of the reflective Photomicrosensor. The
light current (IL) of the phototransistor incorporated by the reflective
Photomicrosensor varies when the reflective Photomicrosensor
senses any other type of sensing object located at a sensing
distance other than the standard sensing distance. Figure 31 shows
how the output of the phototransistor incorporated by the EE-SF5(-
B) varies according to varieties of sensing objects and sensing
distances. Before using the EE-SF5(-B) to sense any other type of
sensing objects, measure the light currents of the phototransistor in
actual operation with and without one of the sensing objects as
shown in Figure 32. After measuring the light currents, calculate the
signal-noise ratio of the EE-SF5(-B) due to the sensing object to
make sure if the sensing objects can be sensed smoothly. The light
current of the reflective Photomicrosensor is, however, several tens
to hundreds of microamperes. This means that the absolute signal
levels of the reflective Photomicrosensor are low. Even if the
reflective Photomicrosensor in operation is not interfered by external
light, the dark current (ID) and leakage current (ILEAK) of the reflective
Photomicrosensor, which are considered noise, may amount to
several to ten-odd microamperes due to a rise in the ambient
temperature. This noise cannot be ignored. As a result, the signal-
noise ratio of the reflective Photomicrosensor will be extremely low if
the reflective Photomicrosensor senses any object with a low
reflection ratio.
Pay utmost attention when applying the reflective Photomicrosensor
to the sensing of the following.
•Marked objects (e.g., White objects with a black mark each)
•Minute objects
The above objects can be sensed if the signal-noise ratio of the
reflective Photomicrosensor is not too low.
The reflective Photomicrosensor must be used with great care,
otherwise it will not operate properly.
Figure 30. Example of Countermeasur
e
Cutout
Figure 31. Sensing Distance Characteristics
(EE-SF5)
Light current IL (µA)
Distance d (mm)
Ta = 25°
I
F
= 20 mA
V
CE
=10 V
a: Aluminum
b: White paper with a reflection factor
of 90%
c: Pink paper
d: OHP sheet
e: Tracing paper
f: Black sponge
Figure 32. Output Current Measurement
Actual operation
Precautions 27
Precautions
■Correct Use
Do not use this product in sensing devices designed
to provi de huma n safety.
· Use the product within the rated voltage range.
Applying voltages beyond the rated voltage ranges may result in
damage or malfunction to the product.
· Wire the product correctly and be careful with the power supply po-
larities.
Incorrect wiring may result in damage or malfunction to the product.
· Connect the loads to the power supply. Do not short-circuit the
loads.
Short-circuiting the loads may result in damage or malfunction to
the product.
●Structure and Materials
The emitter and detector elements of conventional
Photomicrosensors are fixed with transparent epoxy resin and the
main bodies are made of polycarbonate. Unlike ICs and transistors,
which are covered with black epoxy resin, Photomicrosensors are
subject to the following restrictions.
1. Low Heat Resistivity
The storage temperature of standard ICs and transistors is
approximately 150°C. The storage temperature of highly resistant
Photomicrosensors is 100°C maximum. The heat resistance of
the EE-SY169 Series which use ABS resin in the case, is particu-
larly low (80°C maximum).
2. Low Mechanical Strength
Black epoxy resin, which is used for the main bodies of ICs and
transistors, contains additive agents including glass fiber to
increase the heat resistivity and mechanical strength of the main
bodies. Materials with additive agents cannot be used for the bod-
ies of Photomicrosensors because Photomicrosensors must
maintain good optical permeability. Unlike ICs and transistors,
Photomicrosensors must be handled with utmost care because
Photomicrosensors are not as heat or mechanically resistant as
ICs and transistors. No excessive force must be imposed on the
lead wires of Photomicrosensors.
●Mounting
Screw Mounting
If Photomicrosensors have screw mounting holes, the
Photomicrosensors can be mounted with screws. Unless otherwise
specified, refer to the following when tighten the screws.
Read the following before tightening the screws.
1. The use of a torque screwdriver is recommended to tighten each
of the screws so that the screws can be tightened to the tighten-
ing torque required.
2. The use of a screw with a spring washer and flat washer for the
mounting holes of a Photomicrosensor is recommended. If a
screw with a spring washer but without a flat washer is used for
any mounting hole, the part around the mounting hole may crack.
3. Do not mount Photomicrosensors to plates stained with machin-
ing oil, otherwise the machining oil may cause cracks on the Pho-
tomicrosensors.
4. Do not impose excessive forces on Photomicrosensors mounted
to PCBs. Make sure that no continuous or instantaneous external
force exceeding 500 g (4.9 N) is imposed on any lead wire of the
Photomicrosensors.
PCB Mounting Holes
Unless otherwise specified, the PCB to which a Photomicrosensor is
mounted must have the following mounting holes.
●Soldering
Lead Wires
Make sure to solder the lead wires of Photomicrosensors so that no
excessive force will be imposed on the lead wires. If an excessive
forces is likely to be imposed on the lead wires, hold the bases of the
lead wires.
Soldering Temperatu re
Regardless of the device being soldered, soldering should be
completed quickly so that the devices are not subjected to thermal
stress. Care is also required in the processing environment for
processes other than soldering so that the devices are not subject to
thermal stress or other external force.
1. Manual Soldering
Unless otherwise specified, the lead wires of Photomicrosensors
can be soldered manually under the following conditions.
These conditions must also be maintained when using lead-free
solder, i.e., soldering with lead-free solder is possible as long as
the following conditions are maintained.
Soldering temperature: 350°C max. (The temperature of the
tip of a 30-W soldering iron is approxi-
mately 320°C when the soldering iron
is heated up.)
Soldering time: 3 s max.
Soldering position: At least 1.5 mm away from the bases
of the lead wires.
The temperature of the tip of any soldering iron depends on the
shape of the tip. Check the temperature with a thermometer
before soldering the lead wires. A highly resistive soldering iron
incorporating a ceramic heater is recommended for soldering the
lead wires.
WARNING
Precautions for Safe Use
Precautions for Correct Use
Hole diameter Screw size Tightening torque
1.5 dia. M1.4 0.20 N • m
2.1 dia. M2 0.34 N • m
3.2 dia. M3 0.54 N • m
4.2 dia. M4 0.54 N • m
Four Terminals
Five Terminals
Five, 0.8±0.1 dia.
Four, 0.8±0.1 dia.
Terminal pitch ±0.1
Terminal pitch ±0.1
Terminal
pitch ±0.1
Terminal
pitch ±0.1 Terminal
pitch ±0.1
28 Precautions
2. Dip Soldering
The lead wires of Photomicrosensors can be dip-soldered under
the following conditions unless otherwise specified.
Preheating temperature: Must not exceed the storage tempera-
ture of the Photomicrosensors.
Soldering temperature: 260°C max. (the lead wires)
Soldering time: 10 s max.
Soldering position: At least 0.3 mm away from the bases
of the housing.
The soldering temperature is specified as the temperature
applied to the lead terminals. Do not subject the cases to
temperatures higher than the maximum storage temperature. It is
also possible for the sensor case to melt due to residual heat of
the PCB. When using a PCB with a high thermal capacity (e.g.,
those using fiber-glass reinforced epoxy substrates), confirm that
the case is not deformed and install cooling devices as required
to prevent distortion. Particular care is required for the EE-SY169
Series, which use ABS resin in the case.
Do not use non-washable flux when soldering EE-SA-series
Photomicrosensors, otherwise the Photomicrosensors will have
operational problems. For other Photomicrosensors, check the
case materials and optical characteristics carefully to be sure that
residual flux does not adversely affect them.
3. Reflow Soldering
The reflow soldering of Photomicrosensors is not possible except
for the EE-SX1107, -SX1108, -SX1109, -SX1131, -SX4134, EE-
SY125 and EE-SY193. The reflow soldering of these products
must be performed carefully under the conditions specified in the
datasheets of these products, respectively. Before performing the
reflow soldering of these products, make sure that the reflow sol-
dering equipment satisfies the conditions.
Compared to general ICs, optical devices have a lower resistance
to heat. This means the reflow temperature must be set to a lower
temperature. Observe the temperature provides provided in the
specifications when mounting optical devices.
4. External Forces Immediately Following Soldering
The heat resistance and mechanical strength of Photomicrosen-
sors are lower than those of ICs or transistors due to their physi-
cal properties. Care must thus be exercised immediately after
soldering (particularly for dip soldering) so that external forces
are not applied to the Photomicrosensors.
External Forces
The heat resistivity and mechanical strength of Photomicrosensors
are lower than those of ICs or transistors. Do not to impose external
force on Photomicrosensors immediately after the
Photomicrosensors are soldered. Especially, do not impose external
force on Photomicrosensors immediately after the
Photomicrosensors are dip-soldered.
●Cleaning Precautions
Cleaning
Photomicrosensors except the EE-SA105 and EE-SA113 can be
cleaned subject to the following restrictions.
1. Typ es of Detergent
Polycarbonate is used for the bodies of most Photomicrosensors.
Some types of detergent dissolve or crack polycarbonate. Before
cleaning Photomicrosensors, refer to the following results of
experiments, which indicate what types of detergent are suitable
for cleaning Photomicrosensors other than the EE-SA105 and
EE-SA113.
Observe the law and prevent against any environmental damage
when using any detergent.
Results of Experiments
Ethyl alcohol: OK
Methyl alcohol: OK
Isopropyl alcohol: OK
Trichlene: NG
Acetone: NG
Methylbenzene: NG
Water (hot water): The lead wires corrode depending on the
conditions
2. Cleaning Method
Unless otherwise specified, Photomicrosensors other than the
EE-SA105 and EE-SA113 can be cleaned under the following
conditions. Do not apply an unclean detergent to the Photomi-
crosensors.
DIP cleaning: OK
Ultrasonic cleaning: Depends on the equipment and the PCB
size. Before cleaning Photomicrosensors,
conduct a cleaning test with a single Pho-
tomicrosensor and make sure that the
Photomicrosensor has no broken lead
wires after the Photomicrosensor is
cleaned.
Brushing: The marks on Photomicrosensors may be
brushed off. The emitters and detectors of
reflective Photomicrosensors may have
scratches and deteriorate when they are
brushed. Before brushing Photomicrosen-
sors, conduct a brushing test with a single
Photomicrosensor and make sure that the
Photomicrosensor is not damaged after it
is brushed.
●Operating and Storage Temperatures
Observe the upper and lower limits of the operating and storage
temperature ranges for all devices and do not allow excessive
changes in temperature. As explained in the restrictions given in
Structure and Materials, elements use clear epoxy resin, giving them
less resistance to thermal stress than normal ICs or transistors
(which are sealed with black epoxy resin). Refer to reliability test
results and design PCBs so that the devices are not subjected to
excessive thermal stress.
Even for applications within the operating temperature range, care
must also be taken to control the humidity. As explained in the
restrictions given in Structure and Materials, elements use clear
epoxy resin, giving them less resistance to humidity than normal ICs
or transistors (which are sealed with black epoxy resin). Refer to
reliability test results and design PCBs so that the devices are not
subjected to excessive thermal stress. Photomicrosensors are
designed for application under normal humidities. When using them
in humidified or dehumidified, high-humidity or low-humidity,
environments, test performance sufficiently for the application.
●LED Drive Currents
Photomicrosensors consist of LEDs and light detectors. Generally
speaking, temporal changes occur to LEDs when power is supplied
to them (i.e., the amount of light emitted diminishes). With less light,
the photoelectric current is reduced for a sensor with a
phototransistor output or the threshold current is increased for a
sensor with a photo-IC output. Design circuits with sufficient
consideration to the decline in the emitted light level. The reduction
in emitted light is far greater for red LEDs than for infrared LEDs.
Also, with red LEDs that contain aluminum, aluminum oxide will form
if they are powered under high humidities, calling for a greater need
for consideration of the decline in the emitted light level.
●Light Interceptors
Select a material for the light interceptor with superior interception
properties. If a material with inferior light interception properties,
such as a plastic that is not black, is used, light may penetrate the
interceptor and cause malfunction. With Photomicrosensors, most of
which use infrared LEDs, a material that appears black to the human
eye (i.e., in the visible light range) may be transparent to infrared
light. Select materials carefully.
Precautions 29
Guideline for Light Interceptors
When measuring the light interception properties of the light
interceptor, use 0.1% maximum light transmission as a guideline.
Criteria
Where,
IL1 is the IL for light reception
IL2 is the IL for light interception by the intercepter
VTH is the threshold voltage
IF1 is the IF for measurement of IL given in product specifications
IF2 is the IF in actual application ( = (VCC − VF)/RF = (VCC − 1.2)/RF)
ILMAX is the standard upper limit of the optical current IL
Then,
Light transmission = IL2/IL1 = α
Here there should be no problems if the following equation is
satisfied.
VTH ≥ (IF2/IF1) × ILMAX × RL × α
Caution is required, however, because there are inconsistencies in
light transmission.
●Reflectors
The reflectors for most Photomicrosensors are standardized to white
paper with a reflection ratio of 90%. Design the system to allow for
any differences in the reflection ratio of the detection object. With
Photomicrosensors, most of which use infrared LEDs, a material that
appears black to the human eye (i.e., in the visible light range) may
have a higher reflection ratio. Select materials carefully. Concretely,
marks made with dye-based inks or marks made with petrolium-
based magic markers (felt pens) can have the same reflection ratio
for infrared light as white paper.
The reflectors for most Photomicrosensors are standardized to white
paper with a reflection ratio of 90%. Paper, however, disperses light
relatively easily, reducing the effect of the detection angle. Materials
with mirrored surfaces, on the other hand, show abrupt changes in
angle characteristics. Check the reflection ratio and angles
sufficiently for the application.
The output from most Photomicrosensors is determined at a
specified distance. Characteristics will vary with the distance.
Carefully check characteristics at the specific distance for the
application.
●Output Stabilization Time
Photomicrosensors with photo-IC outputs require 100 ms for the
internal IC to stabilize. Set the system so that the output is not read
for 100 ms after the power supply is turned ON. Also be careful if the
power supply is turned OFF in the application to save energy when
the Photomicrosensor is not used.
When using a Photomicrosensor with a phototransistor output
outside of the saturation region, stabilization time is required to
achieve thermal balance. Care is required when using a variable
resistor or other adjustment.
Vcc
OUT
GND
IF
IL
RL
RF
30 Application Examples
Application Examples
Most People May Not Realize the Fact that Photomicro sensors are Built Into Machines and Equipment that
are Used Everyday
Office Automation Machines
Photomicrosensor
Household products Others
Copy machines
Facsimiles
Printers
X-Y plotters
Mouse
Image scanners
FDD
Automatic vending machines
Cameras
Slot machines
Garage doors
Pinball machines
Game machines
VCRs
Camcorders
Audio equipment
Microwave ovens
Air conditioners
Fan heaters
Vacuum cleaners
Application Examples 31
■Application Examples
Classification Products Sensing example
Household products VCRs Rotating reel sensing and tape sensing
Camcorders Lens origin sensing and lens control
Laserdisc players Rotation sensing and disk size sensing
Air conditioners/Fan heaters Louver direction sensing and fan motor rotation sensing
Microwave ovens Turntable sensing
Vacuum cleaners Carpet and floor discrimination
Office automation ma-
chines Printers Origin sensing, paper sensing, paper size sensing, and ink ribbon
end sensing
Copy machines Paper sensing, cassette sensing, and toner sensing
Facsimiles Paper sensing, black end mark sensing, paper size sensing
Floppy disk drives Disk sensing, origin sensing, and write protect sensing
Optical disk drives Disk sensing, disk type sensing, and write protection sensing
Image scanners Origin sensing and movement value sensing
Mouse Movement direction sensing and movement value sensing
X-Y plotters Paper sensing, origin sensing, pen sensing, and movement value
sensing
Others Automatic vending machines/Ticket machines Coin sensing, coin discrimination, and ticket sensing
Cameras Film forwarding, lens control, and motor control
Cash dispensers Card sensing, bill sensing, mechanical control
Robot/Machine tools Mechanical control
Sewing machines Motor rotation sensing and needle position sensing
Pinball machines Ball sensing, mechanical control, and sensing of remaining balls
Slot machines Coil sensing and lever sensing
Game machines Prize sensing, coil sensing, and mechanical control
Garage doors Door opening and closing sensing
32 EE-SX1018 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1018
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact model with a 2-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Four, 0.5
Four, 0.25
Four, C0.3
Optical
axis
Cross section AA
0.5±0.05
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward current IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipation PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sen sitivity wavelen gth λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1018 Photomicrosensor (Transmissive) 33
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Load resistance RL (kΩ) Distance d (mm)
I
F
P
C
Input
Output
Input
Output
90 %
10 %
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 50 mA
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
(Center of
optical axis)
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Sensing Position Characteristics
(Typical)
(Center of optical axis)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Distance d (mm)
34 EE-SX1023-W1 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1023-W1
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 2.1-mm-wide slot.
•Harness type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.200
3 < mm ≤ 6 ±0.240
6 < mm ≤ 10 ±0.290
10 < mm ≤ 18 ±0.350
18 < mm ≤ 30 ±0.420
30 < mm ≤ 50 ±0.500
50 < mm ≤ 80 ±0.600
4-wire UL1007 AWG26 80°C 300 V
Cross section A-A
Unless otherwise specified, the
tolerances are as shown below.
Two, R1.6±0.1
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward current IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipation PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1023-W1 Photomicrosensor (Transmissive) 35
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
36 EE-SX1031 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1031
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High resolution with a 0.5-mm-wide aperture.
•Separate LED/Phototransistor combinations within a single hous-
ing.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Refer to Response Time Measurement Circuit.
(Bottom View)
Silver or white
marking
KC
AE
KC
AE
(2)
(1)
EE-SX
1031
JAPAN
12
7.1±
0.13
Eight, 0.5 Four, 2.54
7.1
2-2.1
7.2
Two, 0.5
3.2
Optical
axis (1)
Optical
axis (2)
Cross section AA
Optical
axis
Eight, 0.25
7.6
A
A
13.6
3
10.2
0.2
13.6
0.5
0.3
3.4
K (1) C (1
)
E (1)A (1)
K (2) C (2
)
E (2)A (2)
Item Symbol Rated value
Emitte r Forw a rd c u r r e nt IF50 mA
(see note)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 to 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Collector–Emitter saturated volt-
age VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising time (see note) tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1031 Photomicrosensor (Transmissive) 37
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Light Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Light current IL (mA)
PC (max.)
rated
VCE = 10 V
AB
B
A
d
RL = 4.7KΩ
RL = 1KΩ
RL = 500KΩ
RL = 100KΩ
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
IF
PCTa = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCC = 10 V
Ta = −25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Light current IL (mA)
VCE = 10 V
IF = 10 mA
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
38 EE-SX1035 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1035
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact model with a 5.2-mm-wide slot.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Cross section AA Cross section BB
Optical axis
Four, 0.5
Four, 0.25
1±0.1
1±0.1
1±0.1
(2.5)
6.3
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitte r Forw a rd c u r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1035 Photomicrosensor (Transmissive) 39
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
40 EE-SX1041 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1041
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 5-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Two, 0. 7±0.1 dia.
0.2 max. 0.2 max.
5 min.
Optical
axis
Two, 0. 7± 0.1
Four, 0.25
Four, 0.5
0.5±0.1
5.2±0.1
2.35±0.1
Two, 2.54
14±0.2
6±0.2 Item Symbol Rated value
Emitt e r Forward current IF50 mA
(see note 1)
Pulse forwar d cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitt er
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 95°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1041 Photomicrosensor (Transmissive) 41
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Response Time vs. Load Resist-
ance Characteristics (Typical)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
42 EE-SX1042 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1042
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•14.5-mm-tall model with a deep slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
5 min.
Four, C0.3
Four, 0.25
Cross section AA
0.5±0.05
(11.2) (1.92)
14.5 12±0.4
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1042 Photomicrosensor (Transmissive) 43
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
44 EE-SX1046 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1046
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•With a horizontal sensing aperture.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
9 min. 0.3 max.
Four, 0.25
Optical axis
Cross section BB Cross section AA
Four, 0.25
Optical
axis
Optical
axis
0.25
max.
0.5±0.1
10±0.3
0.5±0.1
6.5
5
2.5
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP920 nm typ. IF = 20 mA
Detector Light current IL1.2 mA min., 14 mA max. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1046 Photomicrosensor (Transmissive) 45
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Relative light current IL (%)
100
80
60
40
20
0−0.5−0.75 −0.25 0 0.25 0.5 0.75
120
d
IF = 20 mA
VCE = 5 V
Ta = 25°C
(Center of optical axis)
Sensing Position Characteristics
(Typical)
Distance d (mm)
Relative light current IL (%)
100
80
60
40
20
0
−1.5 −1.0 −0.5 0 0.5 1.0 1.5
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
d
46 EE-SX1049 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1049
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact with a slot width of 2 mm.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Cross section BBCross section AA
9
4
Four, C0.3
C0.3
6±0.2
2
AB
AB
1.5
1.5
9 min.
1.2
0.25 max.
2 max.
0.3 max.
KA2.5
0.7±0.1
Four, 0.25
EC
2.5
2 max.
Four, 0.5
Two, 0.5
Optical
axis
Optical
axis
Optical
axis
Optical
axis 5.2
0
−0.2
1.2 dia.
0
−0.05
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1049 Photomicrosensor (Transmissive) 47
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
150
100
50
0
PC
IF
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Ta = −30°C
Ta = 25°C
Ta = 70°C
0
10
8
6
4
2
010 20 30 40 50
Ta = 25°C
V
CE
= 10 V
012345678910
20
18
16
14
12
10
8
6
4
2
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
10,000
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 010 20 30 40 50 60 70 80 90
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CI
F
= 50 mA I
F
= 20 mA
V
CE
= 10 V
V
CE
= 10 V
0 lx
10,000
0.01
tr
tf
0.1 10
1
1,000
100
10
1
VCC = 5 V
Ta = 25°C
100
80
60
40
20
0−0.5 −0.25 0 0.25 0.5 0.75 1.0
d
120
(Center of optical axis)
t
t ft r
t
0
VCC
RL
0
IL
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
48 EE-SX1055 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1055
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Longer leads allow the sensor to be mounted to a 1.6-mm thick
board.
•5.4-mm-tall compact model.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
0.2 max. 0.2 max.
Optical
axis
Cross section AA
Four, 0.5 Four, 0.25
White band
Four, 5°0.5±0.05
5.4±0.2
3.6±0.5
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1055 Photomicrosensor (Transmissive) 49
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
50 EE-SX1057 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1057
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact model with a 3.6-mm-wide slot.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.2
3
<
mm
≤
6
±
0.24
6
<
mm
≤
10
±
0.29
10
<
mm
≤
18
±
0.35
18
<
mm
≤
30
±
0.42
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter For wa rd voltage VF1.15 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL1.5 mA min., 8 mA typ., 30 mA max. IF = 15 mA, VCE = 2 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated
voltage VCE (sat) 0.4 V max. IF = 30 mA, IL = 1 mA
Peak sp ectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ., 20 µA max. VCC = 10 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ., 20 µA max. VCC = 10 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1057 Photomicrosensor (Transmissive) 51
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
52 EE-SX1061 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1061
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 4.6-mm-wide slot.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP ---
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –40°C to 85°C
Storage Tstg –40°C to 100°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter For wa rd voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL1.3 mA min., 26 mA max. IF = 20 mA, VCE = 12 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated
voltage VCE (sat) 0.8 V max. IF = 10 mA, Vcc = 12 V, RL = 22k Ω
Peak sp ectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 1,000 µs max. VCC = 12 V, RL = 22k Ω, IL = 10 mA
Falling ti me tf 1,000 µs max. VCC = 12 V, RL = 22k Ω, IL = 10 mA
Be sure to read Precautions on page 27.
EE-SX1061 Photomicrosensor (Transmissive) 53
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
20
18
16
14
12
10
8
6
4
2
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
-2 -1 1 2 3 4
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 12 V
IF = 20 mA
VCE = 12 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 12 V
Ta = 25°C
(Center of optical axis)
54 EE-SX1070 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1070
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Wide model with a 8-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Two, 0.7±0.1
Four, 0.5 Four, 0.25
Two, 0.7±0.1 dia.
0.5±0.1
5.2±0.1
Unless otherwise specified, the
tolerances are as shown below.
(13.8)
2.35±0.1
6.6±0.1
8+0.2
−0.1
10 0
−0.2
7.5±0.2
2.5
Optical
axis
17.7
K
A
C
E
2.2
Two, C1
6.2
(2.5)
(2.5)
JAPAN
6±0.2
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 95°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1070 Photomicrosensor (Transmissive) 55
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
150
100
50
0
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
56 EE-SX1071 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1071
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3.4-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Four, C0.3
Four, 0.25Four, 0.5
Optical
axis
Cross section AA
Cross section BB
(2.54)
10.2
0.2
0.5
2.1
7.2
6.2
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1071 Photomicrosensor (Transmissive) 57
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
58 EE-SX1081 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1081
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 5-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Two, C1±0.3
Four,
0.5±0.1 Four, 0.25±0.1
Four, C0.3
(Optical axis)
Cross section BB Cross section A
A
5+0.1
0.5±0.1
8.5±0.1
2.5±0.2
6.2±0.5
10±0.2 7.5±0.2
13.7±0.3
(10.5)
6.5±0.1
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1081 Photomicrosensor (Transmissive) 59
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
I
F
= 40 mA
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
60 EE-SX1082 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1082
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Horizontal sensing aperture.
•PCB mounting type.
•High resolution with a 0.2-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
E
C
Unless otherwise specified, the
tolerances are ±0.2 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –40°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter For wa rd voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP920 nm typ. IF = 20 mA
Detector Light current IL0.12 mA min. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated
voltage VCE (sat) 0.08 V typ., 0.4 V max. IF = 20 mA, IL = 0.05 mA
Peak sp ectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 100 µs typ. VCC = 5 V, RL = 50 kΩ, IL = 0.1 mA
Falling ti me tf 1,000 µs typ. VCC = 5 V, RL = 50 kΩ, IL = 0.1 mA
Be sure to read Precautions on page 27.
EE-SX1082 Photomicrosensor (Transmissive) 61
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
d
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PCTa = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 5 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0
−1.5 −1.0 −0.5 0 0.5 1.0 1.5
120
d
(Center of
optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0−0.2 −0.1 0 0.1 0.2 0.3 0.4
120
62 EE-SX1088 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1088
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3.4-mm-wide slot.
•Mounts to PCBs or connects to connectors.
•High resolution with a 0.5-mm-wide aperture.
•OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Two, R1
Two, 3. 2±0.2 dia. holes Two , C2
Four, C0.3
Four, 0.25
Four, 0.5
(Optical axis)
Cross section BB Cross section AA
25±0.2
19±0.15
0.5±0.1
6.5±0.1
0.5±0.1
8.4±0.1
3±0.4
5±0.2 6±0.2
2.5±0.1
7.2±0.2
10±0.2
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1088 Photomicrosensor (Transmissive) 63
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
64 EE-SX1096 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1096
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3.4-mm-wide slot.
•Mounts to PCBs or connects to connectors.
•High resolution with a 0.5-mm-wide aperture.
•With a horizontal sensing slot.
•OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Two, R1
Two, 3.2±0.2 dia. holes Two, C2Four, C0.3
Four, 0.25
Four, 0.5
(Optical axis)
Cross section BB
Cross section AA
25±0.2
19±0.15
0.5±0.1
3±0.4
5±0.2 6±0.2
2.5±0.1
7.2±0.2
10±0.2
2.1±0.15
2.1±0.15
0.5±0.1
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1096 Photomicrosensor (Transmissive) 65
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
(Center of optical axis)
d
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
I
F
P
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Distance d (mm)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical) Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Distance d (mm)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
100
80
60
40
20
0−0.5 −0.25 0 0.25 0.5 0.75 1.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
66 EE-SX1103 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1103
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a sensor width of 5 mm and a slot width of
2mm.
•PCB mounting type.
•High resolution with a 0.4-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 3 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Four, 0.5 Four, 0.2
Two, C0.3
Optical
axis
Gate
dia.
Two, C0.5
5 min.
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified, the
tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP ---
Reverse voltage VR5 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 4.5 V
Collector current IC30 mA
Collector dissipa-
tion PC80 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.3 V typ., 1.6 V max. IF = 50 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP950 nm typ. IF = 50 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 5 V
Dark current ID500 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.3 mA
P eak spectral sensitivity wave-
length λP800 nm typ. VCE = 5 V
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Be sure to read Precautions on page 27.
EE-SX1103 Photomicrosensor (Transmissive) 67
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Input
Output
Input
Output
90 %
10 %
Response Time vs. Light Current
Characteristics (Typical) Sensing Position Characteristics
(Typical)
VCE = 30 V
VCE = 20 V
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Light current It (mA)
Ta = 25°C
VCE = 5 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CIF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Distance d (mm)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Relative light current IL (%)
Distance d (mm)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
68 EE-SX1105 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1105
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
• Ultra-compact with a sensor width of 4.9 mm and a slot width of
2mm.
• Low-height of 3.3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient tem-
perature exceeds 25°C.
2. Complete soldering within 3 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Four, 0.5
Two, C0.7
Optical
axis
Gate
Four, 0.4 Two, R0.15
Two, R0.3
Cross section AA
Four,
5 min.
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward
current IFP ---
Reverse voltage VR5 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 4.5 V
Collector current IC30 mA
Collector
dissipation PC80 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.3 V typ., 1.6 V max. IF = 50 mA
Reverse current IR10 µA max. VR = 5 V
Peak emis sion wavelength λP950 nm typ. IF = 50 mA
Dete c tor Light c u r r e nt IL0.2 mA min. IF = 20 mA, VCE = 5 V
Dark current ID500 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spec tral sensitivity wave-
length λP800 nm typ. VCE = 5 V
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Be sure to read Precautions on page 27.
EE-SX1105 Photomicrosensor (Transmissive) 69
■Engineering Data
I
F
= 50 mA
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°C
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Input
Output
Input
Output
90 %
10 %
Response Time vs. Light Current
Characteristics (Typical) Sensing Position Characteristics
(Typical)
Ta = 25°C
V
CE
= 5 V
V
CE
= 30 V
V
CE
= 20 V
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Ta = 25°C
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Forward current I
F
(mA)
Forward voltage V
F
(V) Forward current I
F
(mA)
Collector dissipation Pc (mW)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Relative light current I
L
(%)
Collector−Emitter voltage V
CE
(V)
Distance d (mm)
Response time tr, tf (µs)
Light current l
t
(mA)
Light current I
L
(mA)
Relative light current I
L
(%)
Distance d (mm)
Forward current I
F
(mA)
I
F
= 20 mA
V
CE
= 5 V
Ta = 25°C
Relative light current I
L
(%) Dark current I
D
(nA) Light current I
L
(mA)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
2.5
2
1.5
1
0.5
160
140
120
100
80
60
40
20
0
−40 −20 0 20 40 60 80 100
I
F
= 20 mA
V
CE
= 5 V
V
CE
= 10 V
70 EE-SX1106 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1106
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a slot width of 3 mm.
•PCB mounting type.
•High resolution with a 0.4-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 3 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Four, 0.2
Two, C0.7
Optical
axis
Gate
Four, 0.5
Two, R1
Two, C0.2
10
−0.1 dia
1.4
0
−0.1dia
5.4
5 min.
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP ---
Reverse voltage VR5 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 4.5 V
Collector current IC30 mA
Collector dissipa-
tion PC80 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.3 V typ., 1.6 V max. IF = 50 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP950 nm typ. IF = 50 mA
Detector Light current IL0.2 mA min. IF = 20 mA, VCE = 5 V
Dark current ID500 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP800 nm typ. VCE = 5 V
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Be sure to read Precautions on page 27.
EE-SX1106 Photomicrosensor (Transmissive) 71
■Engineering Data
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Input
Output
Input
Output
90 %
10 %
Response Time vs. Light Current
Characteristics (Typical) Sensing Position Characteristics
(Typical)
VCE = 30 V
VCE =20 V
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Light current It (mA)
Ta = 25°C
VCE = 5 V
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
Ta = 25°CIF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
VCE = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
Distance d (mm)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Relative light current IL (%)
Distance d (mm)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
IF = 25 mA
72 EE-SX1107 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1107
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
•PCB surface mounting type.
•High resolution with a 0.15-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended Soldering
Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF25 mA
(see note 1)
Pulse forward cur-
rent IFP 100 mA
(see note 2)
Reverse voltage VR5 V
Detector Collecto r–Emitter
voltage VCEO 20 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C
(see note 3)
Manual soldering Tsol 300°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 5 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
P eak spectral sensitivity wavelength λP900 nm typ. ---
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Be sure to read Precautions on page 27.
EE-SX1107 Photomicrosensor (Transmissive) 73
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Relative Light Current vs. Ambient
Temperature Characteristics (Typical) Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Distance d (mm)
Sensing Position Character-
istics (Typical)
VCE =2 V
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = 25°C
VCE = 5 V
IF = 10 mA
IF = 5 mA
Ta = 25°CIF = 5 mA
VCE = 5 V
IF = 5 mA
VCE = 5 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
IF = 5 mA
VCE = 5 V
74 EE-SX1107 Photomicrosensor (Transmissive)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
2,500 pcs./reel
21±0.8 dia. 2±0.5
13±
0.5 dia.
80
±
1 dia.
330±2 dia.
12.4
+2
0
18.4 max.
Product name
Quantity
Lot number
1.5 dia.
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SX1107 Photomicrosensor (Transmissive) 75
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
•The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Manual sold ering
•Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 350°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
260°C max.
Time
120 sec
Temperature
1 to 5°C/s 150 to 180°C
40 sec max.
10 sec max.
1 to 5°C/s 255°C max.
230°C max.
76 EE-SX1108 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1108
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a 5-mm-wide sensor and a 1-mm-wide slot.
•PCB surface mounting type.
•High resolution with a 0.3-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Cross section AA
Optical
axis
Recommended
Soldering Pattern
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF25 mA
(see note 1)
Pulse forward cur-
rent IFP 100 mA
(see note 2)
Reverse voltage VR5 V
Detector Collecto r–Emitter
voltage VCEO 20 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C
(see note 3)
Manual soldering Tsol 300°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 5 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
P eak spectral sensitivity wavelength λP900 nm typ. ---
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Be sure to read Precautions on page 27.
EE-SX1108 Photomicrosensor (Transmissive) 77
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Relative Light Current vs. Ambient
Temperature Characteristics (Typical) Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Distance d (mm)
Sensing Position Characteristics
(Typical)
V
CE
= 2 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = 25°C
V
CE
= 5 V
I
F
= 10 mA
I
F
= 5 mA
Ta = 25°CI
F
= 5 mA
V
CE
= 5 V
I
F
= 5 mA
V
CE
= 5 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
I
F
= 5 mA
V
CE
= 5 V
Response Time vs. Load Resist-
ance Characteristics (Typical)
V
CE
= 10 V
78 EE-SX1108 Photomicrosensor (Transmissive)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
2,000 pcs./reel
21±0.8 dia.
2±0.5
13±
0.5 dia.
Product name
Quantity
Lot number
80±1 dia.
330±2 dia.
12.4
+2
0
18.4 max.
1.5 dia.
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SX1108 Photomicrosensor (Transmissive) 79
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
•The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Manual sold ering
•Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
260°C max.
Time
120 sec
Temperature
1 to 5°C/s 150 to 180°C
40 sec max.
10 sec max.
1 to 5°C/s 255°C max.
230°C max.
80 EE-SX1109 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1109
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a 6-mm-wide sensor and a 3-mm-wide slot.
•PCB surface mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings
(Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended
Soldering Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF25 mA
(see note 1)
Pulse forward cur-
rent IFP 100 mA
(see note 2)
Reverse voltage VR5 V
Detector Collecto r–Emitter
voltage VCEO 20 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C
(see note 3)
Manual soldering Tsol 300°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 5 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
P eak spectral sensitivity wave-
length λP900 nm typ. ---
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Be sure to read Precautions on page 27.
EE-SX1109 Photomicrosensor (Transmissive) 81
■Engineer ing Data
Forward Current vs. Collector Dis-
sipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteris-
tics (Typical)
Response Time Measurement
Circuit
Sensing Position Characteris-
tics (Typical)
Distance d (mm) Distance d (mm)
V
CE
= 2 V
V
CE
= 10 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = 25°C
V
CE
= 5 V
I
F
= 10 mA
I
F
= 5 mA
Ta = 25°CI
F
= 5 mA
V
CE
= 5 V
I
F
= 5 mA
V
CE
= 5 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
I
F
= 5 mA
V
CE
= 5 V
Response Time vs. Load Resist-
ance Characteristics (Typical)
Dark Current vs. Ambient Temper-
ature Characteristics (Typical)
82 EE-SX1109 Photomicrosensor (Transmissive)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
1,000 pcs./reel
21±0.8 dia.
2±0.5
13±
0.5 dia.
Product name
Quantity
Lot No.
80±1 dia.
330+2 dia.
12.4+2
0
18.4 max.
1.5 dia.
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SX1109 Photomicrosensor (Transmissive) 83
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
•The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Manual sold ering
•Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
260°C max.
Time
120 sec
Temperature
1 to 5°C/s 150 to 180°C
40 sec max.
10 sec max.
1 to 5°C/s 255°C max.
230°C max.
84 EE-SX1115 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1115
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•14.5-mm-tall model with a deep slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Unless otherwise specified, the
tolerances are as shown below.
Cross section AA
0.5±0.05
12±0.4
Four, 0.5
(1.94)
Optical axis
(2.1) 4.2±0.1
K
A
C
E
C
B
(11.2)
Four, 0.25
2-2
5 min.
A
2.5
14.5
0.2 5
14
A
Four, C0.3
5
1.03
1.03
Four, R0.1
Four, R0.1
1.35+0.06
−0.01 1.35+0.06
−0.01
1.35+0.06
−0.01
1.35+0.06
−0.01
Part B
Part C
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1115 Photomicrosensor (Transmissive) 85
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
86 EE-SX1128 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1128
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 4.2-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•Horizontal sensing aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
0 < × ≤ 4 ±0.100
4 < × ≤ 18 ±0.200
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1128 Photomicrosensor (Transmissive) 87
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
d
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
20
18
16
14
12
10
8
6
4
2
20
18
16
14
12
10
8
6
4
2
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0−0.5 −0.25 0 0.25 0.5 0.75 1.0
120
(Center of optical axis)
(Center of optical axis)
88 EE-SX1131 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1131
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot.
•PCB surface mounting type.
•High resolution with a 0.3-mm-wide aperture.
•Dual-channel output.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
NC Not connected.
K Cathode
C Collector
E1 Emitter 1
E2 Emitter 2
Recommended Soldering Pattern
Cross section AA
Optical
axis
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF25 mA
(see note 1)
Pulse forward cur-
rent IFP 100 mA
(see note 2)
Reverse voltage VR5 V
Detector Collecto r–Emitter
voltage VCEO 20 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C
(see note 3)
Manual soldering Tsol 300°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 5 mA
Reverse current IR10 µA max. VR = 5 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL1/IL2 50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
P eak spectral sensitivity wavelength λP900 nm typ. ---
Rising tim e tr 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Falling ti me tf 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Be sure to read Precautions on page 27.
EE-SX1131 Photomicrosensor (Transmissive) 89
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Position Characteristics
(Typical)
Distance d (mm) Distance d (mm)
VCE = 2 V
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = 25°C
VCE = 5 V
IF = 10 mA
IF = 5 mA
Ta = 25°CIF = 5 mA
VCE = 5 V
IF = 5 mA
VCE = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
IF = 5 mA
VCE = 5 V
Ta = 25°C
Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
VCC = 5 V
90 EE-SX1131 Photomicrosensor (Transmissive)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
2,000 pcs./reel
21±0.8 dia. 2±0.5
13±
0.5 dia.
80±1 dia.
330±2 dia.
12.4
+2
0
18.4 max.
Product name
Quantity
Lot number
1.5 dia.
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SX1131 Photomicrosensor (Transmissive) 91
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
•The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Manual sold ering
•Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
260°C max.
Time
120 sec
Temperature
1 to 5°C/s 150 to 180°C
40 sec max.
10 sec max.
1 to 5°C/s 255°C max.
230°C max.
92 EE-SX1137 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1137
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 5-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1137 Photomicrosensor (Transmissive) 93
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
94 EE-SX1140 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1140
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 14-mm-wide slot.
•16.3-mm-tall model with a deep slot.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Cross section AA
Unless otherwise specified, the
tolerances are as shown below.
Four, C0.3
Four, 0.8
Four, 0.8
14
3.2±0.1 dia. through-hole
23
35
C
E
12.5±0.15
Four, 0.5
Four, 0.25
(19.9)
BA
BA
1.5
(2.5)
0.2
16.3
5.2
2.8
Optical
axis
(13.5)
4.5±0.5
KA
1.5
(2.5)
Cross section BB
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.4 mA min. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX1140 Photomicrosensor (Transmissive) 95
■Engineering Data
0
10
8
6
4
2
010 20 30 40 50
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
150
100
50
0
PC
IF
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
012345678910
10
9
8
7
6
5
4
3
2
1
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
10,000
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 010 20 30 40 50 60 70 80 90
10,000
0.01
tr
tf
0.1 10
1
1,000
100
10
1
100
80
60
40
20
0−1.5 −0.75 0 0.75 1.5 2.25 3
d
120
(Center of optical axis)
90%
10% t
t ft r
t
0
Input
Output
VCC
RL
Input
0
Output
IL
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
96 EE-SX1235A-P2 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX1235A-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Snap-in mounting model.
•Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs.
•High resolution with a 0.5-mm-wide aperture.
•5-mm-wide slot.
•Connects to Tyco Electronics AMP’s CT-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
C Collector
K, E Cathode,
Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Note: The asterisked dimension is
specified by datum A only.
Recommended Mating Connectors:
Tyco Electronics AMP 173977-3 (press-fit connector)
175778-3 (crimp connector)
179228-3 (crimp connector)
3.2 (Aperture width)
0.5 (Aperture width)
Post header 292250-3
(Tyco Electronics AMP)
Four, R0.5
(see
note)
(3) A
(2) K, E
(1) C
Unless otherwise specified, the
tolerances are as shown below.
−0.3
−0.1
+1
+0.15
+0.1
−0.2
+0.1
−0.2
+0.1
−0.2
−0.15
−0.2
+0.1
+0.1
+0.1
−0.2
−0.05
A
+0.1
3
±0.2
(10.1)
Optical
axis
(5.8)
7.6
0.7
4
6
17
555
1.1
5.6
12.6
3.3
(1.2) (4.6)
(10)
3.5
5.8
7.3
±0.2
5.8
7.3
0.8
8
8.5 (11)
6
8.9
7.6
+0.1
−
0.05
+0.1
−
0.05
+0.15
−
0.05
1.1
1.3
1.7
A
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note)
Pulse forward cur-
rent IFP ---
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note)
Ambient tem-
perature Operating Topr –25°C to 95°C
Storage Tstg –40°C to 100°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 30 mA
Detector Light current IL0.6 mA min., 14 mA max. IF = 20 mA, VCE = 5 V
Dark current ID200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.3 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 5 V
Rising tim e tr 8 µs typ. VCC = 5 V, RL = 100 Ω, IL = 1 mA
Falling ti me tf 8 µs typ. VCC = 5 V, RL = 100 Ω, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SX1235A-P2 Photomicrosensor (Transmissive) 97
■Engineering Data
Refer to EE-SX4235A-P2 on page 158.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
(Center of
optical axis)
Output
Input
Output
Input
V
CC
GND
10%
90%
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
98 EE-SX129 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX129
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide sensing aperture.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
2.1+0.2
0dia. holes
Cross section AA
Optical
axis
Part B
0.5 min.
A
K
E
C
Unless otherwise specified, the
tolerances are as shown below.
13
8
5
6
3
0.25
A
A
13.4±
2
2
5
8
0.2
3±
0.3
B
1
+0.5
0
E
C
A
K
E
C
A
K
0.5
0.8
1.94±
0.2
0.2
2
2.5
2.5
R2.5
5
9.2±
0.3
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP920 nm typ. IF = 20 mA
Detector Light current IL0.2 mA min. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX129 Photomicrosensor (Transmissive) 99
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Vcc
(Center of
optical axis)
0-0.1-0.2 0.1 0.2 0.3 0.4
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
100 EE-SX138 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX138
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3.4-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•Screw-mounting possible.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Four, R1.25
Four, 0.5
Four, 1 R
Four, 0.25
Four, 0.1 taper
2.1 × 0.5 Aperture
Part A
2.54±0.2
7.6±0.3
23.8
0.2 4.75
14.3
13.6
A
K
E
C
(Optical axis)
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL1.9 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX138 Photomicrosensor (Transmissive) 101
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Vcc
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
102 EE-SX153 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX153
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3.4-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•With a horizontal sensing aperture.
•Screw-mounting possible.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
3.2±0.2dia. holes
Four, 0.25
Four, 0.8
Four, 1.5
Two, R1
Cross section AA
Two, 2.54
Unless otherwise specified, the
tolerances are as shown below.
6.2
13.6
0.3
6.4
0.5
2
3.4±
0.2
A 3.2
3
6
3
10.2
0.2
A
7.6±
0.2
K
K
A
A
C
C
E
E
2.1
0.5
1.2
0.6
7.2±
0.2
7.8
JAPAN
EE-SX
153
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX153 Photomicrosensor (Transmissive) 103
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
d
100
80
60
40
20
0−0.5 −0.25 0 0.25 0.5 0.75 1.0
120
104 EE-SX198 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX198
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Four, C0.3
Four, 0.5±0.1
Four, 0.25±0.1
Two, C1±0.3
Optical
axis
Cross section BB
Cross section AA
6.5+0.1
2.5±0.1
6.2±0.5
0.5±0.1
8.5±0.1
5±0.1
12.2±0.3
10±0.2
9.2±0.3
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 20 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX198 Photomicrosensor (Transmissive) 105
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
106 EE-SX199 Photomicrosensor (Transmissive)
7Photomicrosensor (Transmissive)
EE-SX199
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•With a positioning boss.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Four, 0.5±0.1
Four, 0.25±0.1
Two, C1±0.3
Four, C0.3
Two, 0.7 0
-0.1 dia.
Optical axis
Cross section BB
Cross section AA
C
E
K
A
6.5±0.1
6.2±0.5
10±0.2
12.2±0.3
9.2±0.3
8.5±0.1
0.5±0.1
5±0.1
2.5±0.1
4.3
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 20 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SX199 Photomicrosensor (Transmissive) 107
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 5 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
108 EE-SA102 Photomicrosensor (Actuator Mounted)
Photomicrosenso r (Actuator Mounted)
EE-SA102
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•An actuator can be attached.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Two, R1
Two, R0.2
Two, R0.2
Two, R0.2
Four, 0.25
Four, 0.5
Two, 0.7
Two, 0.7
0
−0.1
dia.
Optical
axis
Cross section BB
Cross section AA
Par t C
1.8
+0.1
−0.05
dia.
0.5±0.1
6.2±0.5
1.25±0.1
5±0.1
13.5
6
17
2.5
11
0.4
3
R3
0.5
60°
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SA102 Photomicrosensor (Actuator Mounted) 109
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Actuator Dimensions
Note: 1. Make sure that the portions marked with dotted lines have no burrs.
2. The material of the actuator must be selected by considering the infrared
permeability of the actuator.
2.5±0.2 dia.
1.6 0
−0.1 dia.
13.7±0.1
17±0.2
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
110 EE-SA104 Photomicrosensor (Actuator Mounted)
Photomicrosenso r (Actuator Mounted)
EE-SA104
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•An actuator can be attached.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Four, C0.3
0.25 max.
1.2+0.05
0 dia.
0.3 max. Four, 0.25
1.6+0.05
0 dia.
Optical
axis
Part C Two, 0. 5
Four, 0.5
0.3±0.1
0.3±0.1
0.3±0.1
0.3±0.1
1±0.08
6±0.15
6.75±0.2
9.3±10.7±0.1
4.4
9.7
9
Cross section BB Cross section AA
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SA104 Photomicrosensor (Actuator Mounted) 111
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
2.2±0.1 dia.
1.5 0
−0.1 dia.
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Note: 1. Make sure that the portions marked with dotted lines have
no burrs.
2. The material of the actuator must be selected by
considering the infrared permeability of the actuator.
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
Actuator Dimensions
(Center of optical axis)
112 EE-SA105 Photomicrosensor (Actuator)
Photomicrosensor (Actuator)
EE-SA105
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Model has an actuator.
•Low operating force (0.15 N (15 gf)).
•Connects to circuits with ease.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
■Mechanical Characteristi cs
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Four, 0.25Four, 0.5
1.4 dia.
Actuator
Collector mar
k
9±1
14.2±0.3
2.5
6.8±0.5
8.2
6.2
1.4
R0.6
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Collector–Emitter
voltage VCEO 30 V
Detector Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 70°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 5 V at free position (FP)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 10 µA max. IF = 20 mA, VCE = 5 V at operating position (OP)
Collector–Emitter saturated
voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak sp ectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising time tr --- ---
Falling time tf --- ---
Actuator operation
(IF = 20 mA, VCE = 5 V)
(see note 1)
Free position (FP): 14.2±0.3 mm
Operating position (OP): 13.0 mm min.
Total travel position (TTP): 12.1 mm max.
Operating force (see note 2) 0.15 N (15 gf) max.
Mechanical life expectancy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.)
Be sure to read Precautions on page 27.
EE-SA105 Photomicrosensor (Actuator) 113
■Engineering Data
2. Operating force: The force required to press the actuator from its FP to OP.
Note: 1. Free position (FP): The distance between the bottom of the housing to the
top of the actuator without any external force imposed
on the actuator.
Operating position (OP): The distance between the bottom of the housing
to the top of the actuator when the actuator is
pressed and the IL becomes ILEAK or less.
Total travel position (TTP): The distance between the bottom of the housing
to the top of the actuator when the actuator is fully
pressed.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Distance d
(
mm
)
d (FP point: 0 mm)
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
114 EE-SA113 Photomicrosensor (Actuator)
Photomicrosensor (Actuator)
EE-SA113
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Model has an actuator.
•Low operating force (0.15 N (15 gf)).
•Connects to circuits with ease.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
■Mechanical Characteristi cs
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rate d value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Collector–Emitter
voltage VCEO 30 V
Detector Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 70°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitt e r Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 5 V at free position (FP)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 10 µA max. IF = 20 mA, VCE = 5 V at operating position
(OP)
Collector–Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP850 nm typ. VCE = 10 V
Rising time tr --- ---
Falling time tf --- ---
Actuator operation
(IF = 20 mA, VCE = 5 V)
(see note 1)
Free position (FP): 11.4±0.3 mm
Operating position (OP): 10.2 mm min.
Total travel position (TTP): 9.3 mm max.
Operating force (see note 2) 0.15 N (15 gf) max.
Mechanical life expectan cy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.)
Be sure to read Precautions on page 27.
EE-SA113 Photomicrosensor (Actuator) 115
■Engineering Data
2. Operating force: The force required to press the actuator from its FP to OP.
Note: 1. Free position (FP): The distance between the bottom of the housing to
the top of the actuator without any external force
imposed on the actuator.
Operating position (OP): The distance between the bottom of the housing to
the top of the actuator when the actuator is
pressed and the IL becomes ILEAK or less.
Total travel position (TTP): The distance between the bottom of the housing
to the top of the actuator when the actuator is fully
pressed.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Distance d (mm)
d (FP point: 0 mm)
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
116 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SG3/EE-SG3-B
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Dust-proof model.
•Solder terminal model (EE-SG3).
•PCB terminal model (EE-SG3-B).
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Four, 1.5
Four, 0.
5
Optical axis
Cross section AA
Cross section AA
Four, 0.25
19±0.1
25.4±0.2
3.6±0.2
7.62±0.3 2.54±0.3
2.54
0.8 0.6
1.2
13
Two, 3.2±0.2
dia. holes Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL2 mA min., 40 mA max. IF = 15 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 30 mA, IL = 1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 117
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
IF = 25 mA
Ambient temperature Ta (°C)
IF
PC
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
118 EE-SH3 Series Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SH3 Series
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
•Solder terminal models:
EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
•PCB terminal models:
EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Four, 0.25
Two, C1.5
Four, R1
Matted
Center mark
Solder terminal
Cross section AA
PCB terminal
Cross section AA
19±0.15
25.4
3.4±0.2
2.54±0.2
7.2±0.2 7.2±0.2
7.6±0.3
6.2
10.2
Model Aperture (a x b)
EE-SH3(-B) 2.1 x 0.5
EE-SH3-C(S) 2.1 x 1.0
EE-SH3-D(S) 2.1 x 0.2
EE-SH3-G(S) 0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
Two, 3.2±0.2
dia. holes
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S)
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse curre nt IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wave-
length λP940 nm typ. IF = 20 mA
Detecto r Light curr e nt IL0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA IF = 20 mA,
VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V,
0lx
Leakage current ILEAK --- ---
Collector–Emitt er satu-
rated voltag e VCE (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL= 0.1 mA
Peak spectral sensitivity
wavelength λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V,
RL = 100 Ω,
IL= 5 mA
Falling ti me tf 4 µs typ.
Be sure to read Precautions on page 27.
EE-SH3 Series Photomicrosensor (Transmissive) 119
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SH3(-B)) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(EE-SH3-D(S))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3(-B))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3-G(S))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3-C(S))
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Center of optical axis
Center of optical axis
Center of optical axis
Center of optical axis
d
0
−
+
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
120 EE-SJ3 Series Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SJ3 Series
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide sensing aperture, high-
sensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Model Aperture (a x b)
EE-SJ3-C 2.1 x 1.0
EE-SJ3-D 2.1 x 0.2
EE-SJ3-G 0.5 x 2.1
Four, 0.5
Four, 0.25
Center mark
Cross section BB
Cross section AA
7.2±0.2
2.54±0.2
7.6±0.3
6
0.2
10.2
6.2
0.3
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA (see note 1)
Pulse forward
current IFP 1 A (see note 2)
Reverse voltage VR4 V
Detector Collector–Emit-
ter voltag e VCEO 30 V
Emitter–Collec-
tor voltage VECO ---
Collector cur-
rent IC20 mA
Collector dissi-
pation PC100 mW (see note
1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
EE-SJ3-C EE-SJ3-D EE-SJ3-G
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse curre nt IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wave-
length λP940 nm typ. IF = 20 mA
Detecto r Light curr e nt IL1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitt er satu-
rated voltag e VCE (sat) 0.1 V typ.,
0.4 V max.
--- 0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL= 0.1 mA
Peak spectral sensitivity
wavelength λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V,
RL = 100 Ω,
IL= 5 mA
Falling ti me tf 4 µs typ.
Be sure to read Precautions on page 27.
EE-SJ3 Series Photomicrosensor (Transmissive) 121
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SJ3-G) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(EE-SJ3-D) Sensing Position Characteristics
(EE-SJ3-G)
Sensing Position Characteristics
(EE-SJ3-C)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Center of optical axis
Center of optical axis
d
0
−
+
Response Time Measurement
Circuit
Distance d (mm) Distance d (mm)
Center of optical axis
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
122 EE-SJ5-B Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SJ5-B
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 5-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Four, 0.5Four, 0.25
Optical axis
Cross section AA
2.1 × 0.5 Aperture holes (see note)
Note: There is no difference in size
between the slot on the emitter
and that on the detector.
2.54±0.2
7.2±0.2
5±0.2
15.4
9.2±0.3
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SJ5-B Photomicrosensor (Transmissive) 123
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current IL (%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
124 EE-SJ8-B Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SJ8-B
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•18-mm-tall model with a deep slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Unless otherwise specified, the
tolerances are as shown below.
K
6.5
0.3
0.5
15±0.2
3 min.
2.1
0.5
Cross section BB
20
8
BA
0.2
13.9±0.3
C-1
BA Four, 0.25
18±0.2
4
3.5
1.94
Four, 0.5
2.1
0.5
Cross section AA
0.8
0.8
(11.9)
1.2
1.2
3.2
C
AE
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.05 mA min., 5 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling ti me tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 27.
EE-SJ8-B Photomicrosensor (Transmissive) 125
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical)
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
150
100
50
0
PC
IF
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Ta = −30°C
Ta = 25°C
Ta = 70°C
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%)
0
1
0.8
0.6
0.4
0.2
010 20 30 40 50
Ta = 25°C
V
CE
= 10 V
012345678910
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°C
I
F
= 50 mA
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
I
F
= 20 mA
V
CE
= 10 V
10,000
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 010 20 30 40 50 60 70 80 90
V
CE
= 10 V
0 lx
Dark current ID (nA)
Ambient temperature Ta (°C)
10,000
0.01
tr
tf
0.1 10
1
1,000
100
10
1
VCC = 5 V
Ta = 25°C
100
80
60
40
20
0-0.5 -0.25 0 0.25 0.5 0.75 1.0
d
120
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
(Center of optical axis)
t
t ft r
t
0
VCC
RL
0
IL
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
126 EE-SV3 Series Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SV3 Series
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
•Solder terminal models:
EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
•PCB terminal models
EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Model Aperture (a x b)
EE-SV3(-B) 2.1 x 0.5
EE-SV3-C(S) 2.1 x 1.0
EE-SV3-D(S) 2.1 x 0.2
EE-SV3-G(S) 0.5 x 2.1
Four, 1.5
Four, 0.5
Four, R1
Four,
R1
Four, 0.25
Center mark
Cross section AA Cross section AA
2.54±0.2
2.54±0.2
Unless otherwise specified, the
tolerances are as shown below.
Two,
3.2±0.2 dia.
holes
Two,
3.2±0.2 dia.
holes
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward
current IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emit-
ter voltag e VCEO 30 V
Emitter–Collec-
tor voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to
85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S)
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse curre nt IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wave-
length λP940 nm typ. IF = 20 mA
Detecto r Light curr e nt IL0.5 to 14 mA 1 to 28 mA 0.1 mA min. 0.5 to 14 mA IF = 20 mA,
VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V,
0lx
Leakage current ILEAK --- ---
Collector–Emitt er satu-
rated voltag e VCE (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL= 0.1 mA
Peak spectral sensitivity
wavelength λP850 nm typ. VCE = 10 V
Rising tim e tr 4 µs typ. VCC = 5 V,
RL = 100 Ω,
IL= 5 mA
Falling ti me tf 4 µs typ.
Be sure to read Precautions on page 27.
EE-SV3 Series Photomicrosensor (Transmissive) 127
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SV3(-B)) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(EE-SV3-D(S)) Sensing Position Characteristics
(EE-SV3(-B))
Sensing Position Characteristics
(EE-SV3-G(S)) Sensing Position Characteristics
(EE-SV3-C(S))
Input
Output
Input
Output
90 %
10 %
Response Time Measurement
Circuit
Distance d (mm) Distance d (mm)
Distance d
(
mm
)
Distance d
(
mm
)
Center of optical axis
Center of optical axis
Center of optical axis
Center of optical axis
d
0
−
+
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
IF = 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
128 EE-SX298 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX298
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•With a Photo-Darlington transistor as a detector element.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Four,
0.5±0.1
Four, 0.25+0.1
Two, C1 ±0.3
Four, C0.3
Optical axis
Cross section AACross section BB
5±0.1
0.5±0.1
8.5±0.1 10±0.2
6.2±0.5
6.5±0.1
2.5±0.1
12.2±0.3
9.2±0.3
K
A
C
E
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 35 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 20 mA max. IF = 1 mA, VCE = 2 V
Dark current ID2 nA typ., 1,000 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age VCE (sat) 0.75 V typ., 1.0 V max. IF = 2 mA, IL = 0.5 mA
P eak spectral sensitivity wave-
length λP780 nm typ. VCE = 5 V
Rising tim e tr 70 µs typ. VCC = 5 V, RL = 100 Ω,
IL = 10 mA
Falling ti me tf 70 µs typ. VCC = 5 V, RL = 100 Ω,
IL = 10 mA
Be sure to read Precautions on page 27.
EE-SX298 Photomicrosensor (Transmissive) 129
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
(Center of
optical axis)
90 %
10 %
Input
Output
Input
Output
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 2 V
IF = 3 mA
IF = 2.5 mA
IF = 2 mA
IF = 1 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 1 mA
VCE = 2 V
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Relative light current IL (%)
Dark current ID (nA)
IF = 3.5 mA
Ambient temperature Ta (°C)
IF
PC
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF = 1.5 mA
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
130 EE-SX301/-SX401 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX301/-SX401
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX301)
•Light ON model (EE-SX401)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Five, 0.5
Five, 0.25
Cross section AA
Cross section BB
Center mark
Optical axis
Optical
axis
Optical
axis
2.5±0.2
3.4±0.2
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Reverse voltage VR4 V
Detect or Power supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output cu r r e nt IOUT 16 mA
Permi ssible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX301),
IF = 8 mA (EE-SX401)
High-level output vol t-
age VOH 15 V min. Vcc = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX301), IF = 0 mA
(EE-SX401)
Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
P eak spectral sensitivity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current whe n output is OFF IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
LED current whe n output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX301/-SX401 Photomicrosensor (Transmissive) 131
■Engineering Data
Note: The values in the parentheses apply to the EE-SX401.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX301 EE-SX401
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX401.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Supply voltage VCC (V)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Low level output voltage V
OL
(V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
Output transistor
Distance d (mm)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
V
CC
= 5 V
I
F
= 0 mA (15 mA)
I
OL
= 16 mA
I
OL
= 5 mA
Ta = 25
°
C
I
F
= 0 mA (15 mA)
V
CC
= 5 V
R
L
= 330 Ω
Ta = 25
°
C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25
°
C
I
F
= 15 mA
V
CC
= 5 V
R
L
= 330 Ω
n = repeat 20 times
Center of optical axi
s
d
1
= 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
R
L
= 1 kΩ
Response delay time tPHL, tPLH (µs)
I
F
= 0 mA (15 mA)
V
CE
= 5 V
Ta = 25
°
C
LED current IFT (mA)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
Ambient temperature Ta (°C)
VCC
= 5 V
R
L
= 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage V
OL
(V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
132 EE-SX305/-SX405 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX305/-SX405
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX305)
•Light ON model (EE-SX405)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Cross section AACross section BB
Optical axis
Center mark
Optical
axis
Optical
axis
Five, 0.25
Five, 0.25
2.5±0.2
10±0.2
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output voltag e VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX305),
IF = 8 mA (EE-SX405)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX305),
IF = 0 mA (EE-SX405)
Current cons um ption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak spectral sensitivity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response fr e que ncy f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX305/-SX405 Photomicrosensor (Transmissive) 133
■Engineering Data
Note: The values in the parentheses apply to the EE-SX405.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX305 EE-SX405
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX405.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage V
OL
(V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
V
CC
= 5 V
I
F
= 0 mA (15 mA)
I
OL
= 16 mA
I
OL
= 5 mA
Ta = 25
°
C
I
F
= 0 mA (15 mA)
V
CC
= 5 V
R
L
= 330 Ω
Ta = 25
°
C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25
°
C
I
F
= 15 mA
V
CC
= 5 V
R
L
= 330 Ω
n = repeat 20 times
d
1
= 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
R
L
= 1 kΩ
Response delay time tPHL, tPLH (µs)
I
F
= 0 mA (15 mA)
V
CE
= 5 V
Ta = 25
°
C
LED current IFT (mA)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
Ambient temperature Ta (°C)
V
CC
= 5 V
R
L
= 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage V
OL
(V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am
-
bient Temperature Characteristic
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
134 EE-SX3070/-SX4070 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX3070/-SX4070
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX3070)
•Light ON model (EE-SX4070)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Optical
axis
Five, 0.25
Five, 0.5
Two, 0. 7
Two, C1
Two, 0. 7±0.1 dia.
(1.25)(1.25)
2.35±0.1
(13.8)
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltag e VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emis sion wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3070),
IF = 10 mA (EE-SX4070)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 10 mA (EE-SX3070),
IF = 0 mA (EE-SX4070)
Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
P eak spectral sensitivity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 10 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2)
Response delay time tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Response delay time tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX3070/-SX4070 Photomicrosensor (Transmissive) 135
■Engineering Data
Note: The values in the parentheses apply to the EE-SX4070.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX3070 EE-SX4070
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX4070.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
IF = 0 mA (15 mA)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristic
s
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
136 EE-SX3081/-SX4081 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX3081/-SX4081
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX3081)
•Light ON model (EE-SX4081)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Cross section AA
Cross section BB
Optical
axis
Four, C0.3
Two, C1 ±0.3
Five, 0.25±0.1
(Five, 0.5±0.1)
8.5±0.1
8.2±0.5
5±0.1
2.5±0.2
2.5+0.1
6.5±0.1
6.2±0.5
10±0.2
7.5±0.2
13.7+0.3
(10.5)
(2.5)
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Reverse voltage VR4 V
Detect or Power supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output cu r r e nt IOUT 16 mA
Permi ssible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3081),
IF = 8 mA (EE-SX4081)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX3081),
IF = 0 mA (EE-SX4081)
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 8 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2)
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 137
■Engineering Data
Note: The values in the parentheses apply to the EE-SX4081.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX3081 EE-SX4081
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX4081.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
IF = 0 mA (15 mA)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
138 EE-SX3088/-SX4088 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX3088/-SX4088
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX3088)
•Light ON model (EE-SX4088)
•OMRON’s XK8-series Connectors can be connected to the lead
wires without a PCB. Contact your OMRON representative for infor-
mation on obtaining XK8-series Connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Optical axis
Cross section AA
Cross section BB
Two, R1
Two, C2
Four, C0.3
Four, 0.5
Four, 0.25
Two, 3.2±0.2 dia. holes
25±0.2
19±0.15
0.5±0.1
0.5±0.1
8.4±0.1
3.5±0.4
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3088),
IF = 5 mA (EE-SX4088)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX3088),
IF = 0 mA (EE-SX4088)
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm VCC = 4.5 to 16 V
LED current when output is OFF IFT 2 mA typ., 5 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX3088/-SX4088 Photomicrosensor (Transmissive) 139
■Engineering Data
Note: The values in the parentheses apply to the EE-SX4088.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX3088 EE-SX4088
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX4088.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) (Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
IF = 0 mA (15 mA)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
LED Current vs. Supply Voltage
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
140 EE-SX3133 Photo IC Output Photomicrosensor (Transmissive)
Photo IC Output Photomicrosensor (Transmissive)
EE-SX3133
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Side-slit model and Dark ON model.
•OMRON’s XK8-series Connectors can be connected to the lead
wires without a PCB. Contact your OMRON representative for infor-
mation on obtaining XK8-series Connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Cross section AA
Unless otherwise specified, the
tolerances are as shown below.
0.2
+0.2
−0.1
0.2
+0.2
−0.1
4±0.2
22±0.3
18±0.1
13.4±0.3
AB
(C1)
(8)
0.3
8.25±0.1
7.75±0.1
3.7
410.7
Two, 2 . 5±0.1 dia. holes
2±0.1
Cross section BB
O
V
G
K
A
2±0.1
5±0.2
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 8 mA
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm VCC = 4.5 to 16 V
LED current when output is OFF IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response delay t ime tPLH 3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay t ime tPHL 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Be sure to read Precautions on page 27.
EE-SX3133 Photo IC Output Photomicrosensor (Transmissive) 141
■Engineering Data
Input
Output
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage.
2. The following illustrations show the definition of response
delay time.
tPLH tPHL
t
t
0
0
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) (Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Supply voltage VCC (V)
Low level output voltage V
OL
(V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Response delay time tPHL, tPLH (µs)
LED current IFT (mA)
Ambient temperature Ta (°C)
Low level output voltage V
OL
(V)
Output current IC (mA) Ambient temperature Ta (°C)
LED Current vs. Supply Voltage
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
300
250
200
150
100
50
0
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Ta = −30°C
Ta = 25°C
Ta = 70°C
7
6
5
4
3
2
1
002 4 6 8 10121416
IFT OFF
IFT ON
VCC
OUT
GND
IFICC
VOUT
RL
Ta = 25°C
R
L
= 1 kΩ
7
6
5
4
3
2
1
0
−60
IFT OFF
IFT ON
−40 −20 0 20 40 60 80
VCC
OUT
GND
IFICC
VOUT
RL
VCC
= 5 V
R
L
= 330 Ω
1
1 10 100
0.1
0.01
0.001
VCC
OUT
GND
IOUT
I
F
= 0 mA (15 mA)
V
CC
= 5 V
Ta = 25
°
C
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
−50 −40 −30 −20 −100 1020304050607080
VCC
OUT
GND
IFICC
VOUT
RL
V
CC
= 5 V
I
F
= 0 mA
I
OL
= 16 mA
I
OL
= 5 mA
4
3.5
3
2.5
2
1.5
1
0.5
00246810121416
VCC
OUT
GND
IFICC
VOUT
RL
40
35
30
25
20
15
10
5
0040
205 1015 253035
tPHL
tPLH
t
t
tPLH tPHL
IF
VCC
OUT
GND
IFICC
VOUT
RL
ON
−0.4
OFF
−0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VCC
OUT
GND
IFICC
VOUT
RLd
Ta = 25
°
C
I
F
= 0 mA
VCC
= 5 V
R
L
= 330 Ω
VOUT
(EE-SX3@@)
Center of optical axis
d
1
= 0.01 mm
Ta = 25
°
C
I
F
= 15 mA
V
CC
= 5 V
R
L
= 330 Ω
n = repeat 20 times
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
Ta = 25
°
C
142 EE-SX338 Photo IC Output Photomicrosensor (Transmissive)
Photo IC Output Photomicrosensor (Transmissive)
EE-SX338
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Side-slit model.
•Dark ON model.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Cross section AA
Cross section BB
Unless otherwise specified, the
tolerances are as shown below.
0.5±0.1 4.2±0.3
8
6
2.5
2.1
Five, 0.5
1.6
1.25 1.25
2.1
V
O
G
K
A
Five, 0.25
10.2
14.4
2
3.4±0.2
3±0.13 0.5±0.1
9.5±0.5
A
B
A
B
20.4±0.1
26.4
6.2
0.3
0.5
Two, C1.7
1
0.2
Two, 3.2±0.2 dia. holes
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 8 mA
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm VCC = 4.5 to 16 V
LED current when output is OFF IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX338 Photo IC Output Photomicrosensor (Transmissive) 143
■Engineering Data
Disk
Input
Output
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage.
3. The following illustrations show the definition of response
delay time.
0.5 mm
0.5 mm
2.1 mm
2. The value of the response frequency is measured
by rotating the disk as shown below.
tPLH tPHL
t
t
0
0
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) (Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Response delay time tPHL, tPLH (µs)
LED current IFT (mA)
Ambient temperature Ta (°C)
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
LED Current vs. Supply Voltage
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
300
250
200
150
100
50
0
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Ta = −30°C
Ta = 25°C
Ta = 70°C
7
6
5
4
3
2
1
002 4 6 8 10 12 14 16
IFT OFF
IFT ON
VCC
OUT
GND
IFICC
VOUT
RL
Ta = 25°C
RL = 1 kΩ
7
6
5
4
3
2
1
0
−60
IFT OFF
IFT ON
−40 −20 0 20 40 60 80
VCC
OUT
GND
IFICC
VOUT
RL
VCC = 5 V
RL = 330 Ω
1
1 10 100
0.1
0.01
0.001
VCC
OUT
GND
IOUT
IF = 0 mA
VCC = 5 V
Ta = 25°C0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
−50 −40 −30 −20 −100 1020304050607080
VCC
OUT
GND
IFICC
VOUT
RL
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
4
3.5
3
2.5
2
1.5
1
0.5
00246810121416
VCC
OUT
GND
IFICC
VOUT
RL
40
35
30
25
20
15
10
5
0040
205 1015 253035
tPHL
tPLH
t
t
tPLH tPHL
IF
VCC
OUT
GND
IFICC
VOUT
RL
VCC = 5 V
RL = 330 Ω
Ta = 25°C
IF = 0 mA
VOUT
(EE-SX3@@) ON
−0.4
OFF
−0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VCC
OUT
GND
IFICC
VOUT
RLd
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
Ta = 25°C
144 EE-SX384/-SX484 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX384/-SX484
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX384)
•Light ON model (EE-SX484)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Unless otherwise specified,
the tolerances are ±0.2 mm.
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
0
Cross section AA
Cross section BB
7 min. Five, 0.5
Five, 0.25
2.5
85.5
0.5
0.5
5.5
1.25 1.25
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX384),
IF = 8 mA (EE-SX484)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX384), IF = 0 mA
(EE-SX484)
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX384/-SX484 Photomicrosensor (Transmissive) 145
■Engineering Data
Note: The values in the parentheses apply to the EE-SX484.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX384 EE-SX484
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX484.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
d1 = 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
IF = 0 mA (15 mA)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
n = repeat 20 times
146 EE-SX493 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX493
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•Allows highly precise sensing with a 0.2-mm-wide sensing aper-
ture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max.
±0.125
3 < mm ≤ 6
±0.150
6 < mm ≤ 10
±0.180
10 < mm ≤ 18
±0.215
18 < mm ≤ 30
±0.260
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Cross section AA
Cross section BB
Five, 0.5
Five, 0.25
Two, 1
0
−0.2
dia.
6
0.2
7±0.1
0.75±0.1
6.9±0.5
6.5±0.05
(1.25)(1.25)
9.5
Pull-off
taper:
1/25
max.
(Tip dimension)
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 60°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward v oltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Low-level output voltag e VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 15 mA
High-l evel output voltage VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 0 mA
Current consumption ICC 5 mA typ., 10 mA max. VCC = 16 V
Peak spectral sensi ti vity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current whe n output is OFF IFT 10 mA typ., 15 mA max. VCC = 4.5 to 16 V
LED current whe n output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX493 Photomicrosensor (Transmissive) 147
■Engineering Data
2.1 mm
0.2 mm
0.2 mm Disk
Input
Output
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Supply voltage VCC (V)
Low level output voltage V
OL
(V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
I
FT
ON
I
FT
OFF
V
CC
= 5 V
I
F
= 15 mA
I
OL
= 16 mA
I
OL
= 5 mA
Ta = 25
°
C
I
F
= 15 mA Ta = 25
°
C
I
F
= 15 mA
V
CC
= 5 V
R
L
= 330 Ω
n = repeat 20 times
d
1
= 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
R
L
= 1 kΩ
Response delay time tPHL, tPLH (µs)
I
F
= 15 mA
V
CC
= 5 V
Ta = 25
°
C
LED current IFT (mA)
I
FT
ON
I
FT
OFF
Ambient temperature Ta (°C)
V
CC
= 5 V
R
L
= 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage V
OL
(V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
40
35
30
25
20
15
10
5
0040
205 1015 253035
tPHL (tPLH)
tPLH (tPHL)
VOUT
(EE-SX4@@)tPHL tPLH t
t
IF
VCC
OUT
GND
IFICC
VOUT
RL
V
CC
= 5 V
R
L
= 330 Ω
148 EE-SX398/498 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX398/498
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•High resolution with a 0.5-mm-wide sensing aperture.
•Dark ON model (EE-SX398)
•Light ON model (EE-SX498)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
K
A
V
G
O
Optical
axis
Cross section AA
Cross section BB
Two, C1 ±0.3
Five,
0.5±0.1
Five, 0.25±0.1
Four, C0.3
12.2±0.3
0.5±0.1
8.5±0.5
8.2±0.5
10±0.2
6.2±0.5
6.5±0.1
(2.5)
(9.2)
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Reverse voltage VR4 V
Detector Pow er supply volt-
age VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output
dissipation POUT 250 mW (see
note 1)
Ambient tem-
perature Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wave-
length λP940 nm typ. IF = 20 mA
Detector Low-level output volt-
age VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX398),
IF = 5 mA (EE-SX498)
High-level output volt-
age VOH 15 V min. VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX398), IF = 0 mA
(EE-SX498)
Current cons umption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
Peak sp ectral sensitivi-
ty wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 2 mA typ., 5 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 15% typ. VCC = 4.5 to 16 V (see note 1)
Response frequency f 3 kHz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX398/498 Photomicrosensor (Transmissive) 149
■Engineering Data
Note: The values in the parentheses apply to the EE-SX498.
2.1 mm
0.5 mm
0.5 mm Disk
Input
Output
Input
Output
EE-SX398 EE-SX498
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EE-
SX498.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
Center of optical axis
Supply voltage VCC (V)
Low level output voltage V
OL
(V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
V
CC
= 5 V
I
F
= 0 mA (15 mA)
I
OL
= 16 mA
I
OL
= 5 mA
Ta = 25
°
C
I
F
= 0 mA (15 mA)
V
CC
= 5 V
R
L
= 330 Ω
Ta = 25
°
C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Ta = 25
°
C
I
F
= 15 mA
V
CC
= 5 V
R
L
= 330 Ω
d
1
= 0.01 mm
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
R
L
= 1 kΩ
Response delay time tPHL, tPLH (µs)
I
F
= 0 mA (15 mA)
V
CC
= 5 V
Ta = 25
°
C
LED current IFT (mA)
I
FT
OFF (I
FT
ON)
I
FT
ON (I
FT
OFF)
Ambient temperature Ta (°C)
V
CC
= 5 V
R
L
= 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage V
OL
(V)
Output current IC (mA) Ambient temperature Ta (°C)
Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
LED Current vs. Ambient Temper-
ature Characteristics (Typical)
n = repeat 20 times
150 EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX3009-P1/-SX4009-P1
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Screw-mounting model.
•High resolution with a 0.5-mm-wide sensing aperture.
•With a 5-mm-wide groove.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s EI-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, Vcc = 5 V ±10%)
Internal Circuit
Dimensions Tolerance
4 mm max. ±0.2
4 < mm ≤ 16 ±0.3
16 < mm ≤ 63 ±0.5
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON EE-1005 (with harness)
Optical
axis
171825-3
(Tyco Electronics AMP)
3±0.1 dia, depth: 2
0.5 (Aperture width)
Two, R1
4.2±0.2 dia. hole
4 0
−0.1 dia.
34
23±0.2
10.5
7.5
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rate d val u e
Power supply voltage VCC 10 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –25°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 30 mA max. With and without incident
Low-level outp ut voltage VOL 0.3 V max. IOUT = 16 mA
Without incident (EE-SX3009-P1)
With incident (EE-SX4009-P1)
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC
With incident (EE-SX3009-P1)
Without incident (EE-SX4009-P1), RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
0.5 mm
0.5 mm
t = 0.2 mm
Disk
Be sure to read Precautions on page 27.
EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive) 151
■Engineering Data
Note: The values in the parentheses apply to the EE-SX4009-P1.
Wiring
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output transistor
Distance d (mm)
Center of
optical axis
Light interrupting plate
d
1
= 0±0.3 mm V
CC
= 5 V, Ta = 25°C
R
L
= 47 kΩ
ON
(OFF)
OFF
(ON)
EE-1005 Connector
(1) (2) (3)
1,000±20
No. Name Model Quantity Maker
1 Receptacle housing 171822-3 1 Tyco Elec-
tronics
AMP
2 Receptacle contact 170262-1 3 Tyco Elec-
tronics
AMP
3 Lead wire UL1007 AWG24 3 ---
Connector
circuit no. Lead wire
color Output whe n c onnected
to EE-SX 4009-P1/ EE -S X3009-P 1
1RedV
CC
2 Orange GND
3YellowOUT
152 EE-SX4019-P2 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX4019-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Screw-mounting model.
•High resolution with a 0.5-mm-wide sensing aperture.
•With a 5-mm-wide groove.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s CT-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
175778-3 (crimp connector)
173977-3 (press-fit connector)
Center of
optical axis
175489-3 (Tyco Electronics AMP)
0.5 (Aperture
width)
Two, R1
Two, R0.5
4.2±0.2 dia.
4 0
−0.1 dia.
23±0.2
38
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rate d val u e
Power supply voltage VCC 7 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –20°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 20 mA max. With and without incident
Low-level outp ut voltage VOL 0.3 V max. IOUT = 16 mA
With incident
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC
Without incident, RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
0.5 mm
0.5 mm
t = 0.2 mm
Disk
Be sure to read Precautions on page 27.
EE-SX4019-P2 Photomicrosensor (Transmissive) 153
■Engineering Data
Output Allowable Dissipation vs.
Ambient Temperature Characteristics Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output transistor
Distance d
(
mm
)
Center of
optical axis
Light interrupting plate
Ambient temperature Ta (°C)
d
1
= 0±0.3 mm V
CC
= 5 V, Ta = 25°C
R
L
= 47 kΩ
OFF
ON
154 EE-SX4134 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX4134
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact model.
•Photo IC output model.
•Operates at a VCC of 2.2 to 7 V.
•PCB surface mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
V Supply voltage
(Vcc)
O Output (OUT)
G Ground (GND)
A
K
V
G
O
Unless otherwise specified, the
tolerances are ±0.15 mm.
Optical axis
Item Sy mbol Rated value
Emitter F orward current IF25 mA (see note 1)
Reverse voltage VR5 V
Detector Supply voltage VCC 9 V
Output voltage VOUT 17 V
Output current IOUT 8 mA
Permi ssi ble output
dissipation POUT 80 mW (see note 1)
Ambient
temperature Operating Topr –25°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 230°C (see note 2)
Manual soldering Tsol 300°C (see note 2)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 20 mA
Reverse curre nt IR0.01 µA typ., 10 µA max. VR = 5 V
Peak emission wave-
length λP940 nm typ. IF = 20 mA
Detector Power supply voltage VCC 2.2 V min., 7 V max. ---
Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 2.2 to 7 V, IOL = 8 mA, IF = 7 mA
High-le vel output curr ent IOH 10 µA max. Vcc = 2.2 to 7 V, IF = 0 mA, VOUT = 17 V
Current consumption ICC 2.8 mA typ., 4 mA max. Vcc = 7 V
Peak spectral sensitivity
wavelength λP870 mm typ. Vcc = 2.2 to 7 V
LED current when output is ON IFT 2.0 mA typ., 3.5 mA max. VCC = 2.2 to 7 V
Hysteresis ∆H 21% typ. VCC = 2.2 to 7 V (see note 1)
Response frequency f 3 kHz min. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 2)
Response delay t ime tPHL 7 µs typ. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3)
Response delay t ime tPLH 18 µs typ. VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3)
Be sure to read Precautions on page 27.
EE-SX4134 Photomicrosensor (Transmissive) 155
■Engineering Data
2.1 mm
0.5 mm
0.5 mm
Disk
Input
Output
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured by
rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
Forward voltage VF (V)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Repeat Sensing Position
Characteristics (Typical)
Output transistor
Distance d (mm)
0.01
Supply voltage VCC (V)
Low level output voltage VOL (V)
Current consumption Icc (mA)
Supply voltage VCC (V) Forward current IF (mA)
VCC = 5 V
IF = 7 mA
IOL = 8 mA
IOL = 0.5 mA
Ta = 25°C
IF = 0 mA Ta = 25°C
IF = 5 mA
VCC = 5 V
RL = 4.7 kΩ
n = repeat 20 times
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 4.7 kΩ
Response delay time tPHL, tPLH (µs)
IOL = 8 mA
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 4.7 kΩ
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA)
Ambient temperature Ta (°C)
IF = 7 mA
LED Current vs. Ambient Temper-
ature Characteristics (Typical) Low-level Output Voltage vs. Am-
bient Temperature Characteristics
(Typical)
40
35
30
25
20
15
10
5
0030
2051015 25
tPHL
tPLH
INPUT
OUTPUT t
t
tPLH
tPHL
IF
VCC
OUT
GND
IFICC
VOUT
RLVCC = 5 V
RL = 4.7 kΩ
Ta = 25°C
156 EE-SX4134 Photomicrosensor (Transmissive)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
2,000 pcs./reel
21±0.8 dia. 2±0.5
13±
0.5 dia.
80±1 dia.
330±2 dia.
12.4 +2
0
18.4 max.
Product name
Quantity
Lot number
1.5 dia.
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SX4134 Photomicrosensor (Transmissive) 157
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
•The recommended thickness of the metal mask for screen printing
is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the fol-
lowing chart is obtained for the upper surface of the product being
soldered.
Manual sold ering
•Use”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature
of the iron tip at 300°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature
before handling it.
Storage
To protect the product from the effects of humidity until the package
is opened, dry-box storage is recommended. If this is not possible,
store the product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow
soldering must be done within 48 hours after opening the envelope,
during which time the product must be stored under 30°C at 80%
maximum humidity.
If it is necessary to store the product after opening the envelope, use
dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six
months or more, or if more than 48 hours have lapsed since the
envelope was opened, bake the product under the following
conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
260°C max.
Time
120 sec
Temperature
1 to 5°C/s 150 to 180°C
40 sec max.
10 sec max.
1 to 5°C/s 255°C max.
230°C max.
158 EE-SX4235A-P2 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX4235A-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Snap-in mounting model.
•Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
•High resolution with a 0.5-mm-wide sensing aperture.
•With a 5-mm-wide slot.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s CT-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
175778-3 (crimp connector)
173977-3 (press-fit connector)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
292250-3
(Tyco Electronics AMP)
0.5 (Aperture
width)
3.2
(Aperture
width)
Optical
axis
7.6±0.2 Four, R0.5
(1.2)
Note: The dimension is specified
by datum A only.
Unless otherwise specified, the
tolerances are as shown below.
(see
note)
Item Sym b ol Rate d val u e
Power supply voltage VCC 7 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –25°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 16.5 mA max. With and without incident
Low-level outp ut voltage VOL 0.35 V max. IOUT = 16 mA with incident
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
0.5 mm
0.5 mm
t = 0.2 mm
Disk
Be sure to read Precautions on page 27.
EE-SX4235A-P2 Photomicrosensor (Transmissive) 159
■Engineering Data
■Recommended Mounting Holes
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
•The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi-
crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
•After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
•When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi-
crosensor may fall out.
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output transistor
Distance d (mm)
d1 = 0±0.3 mm VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Center of optical axis
Light interrupting plate
ON
−3−2−10123
OFF
d2
d
Sensing Position Characteristics
(Typical)
Output transistor
Distance d (mm)
Center of optical axis
d2 = 0±1.3 mm VCC = 5 V
Ta = 25°C
RL = 47 kΩ
t = 1.0 mm t = 1.2 mm
t = 1.6 mm
17.1±0.1
(for t =1.0,1.2,1.6)
3.7±0.1
160 EE-SX3239-P2 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX3239-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Snap-in mounting model.
•Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
•High resolution with a 0.5-mm-wide sensing aperture.
•With a 5-mm-wide slot.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s CT-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 175778-3 (crimp connector)
173977-3 (press-fit connector)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Post header
292250-3 (Tyco Electronics AMP)
(2.4),
Aperture
width 0.5,
Aperture width
Note: The asterisked dimension
is specified by datum A
only.
Unless otherwise specified, the
tolerances are as shown below.
179228-3 (crimp connector)
Item Sym b ol Rate d val u e
Power supply voltage VCC 7 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –20°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 16.5 mA max. With and without incident
Low-level outp ut voltage VOL 0.35 V max. IOUT = 16 mA
without incident (EE-SX3239-P2)
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC with incident (EE-SX3239-P2),
RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
0.5 mm
0.5 mm
t = 0.2 mm
Disk
Be sure to read Precautions on page 27.
EE-SX3239-P2 Photomicrosensor (Transmissive) 161
■Engineering Data
■Recommended Mounting Holes
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
•The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi-
crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
•After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
•When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi-
crosensor may fall out.
Output Allowable Dissipation vs.
Ambient Temperature Characteristics Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Distance d (mm)
Center of optical axis
Light interrupting plate
Ambient temperature Ta (°C)
d
1
= 0±0.3 mm V
CC
= 5 V
Ta = 25°C
R
L
= 47 kΩ
Sensing Position Characteristics
(Typical)
Output transistor
Distance d (mm)
Center of optical axis
ON
−3−2−10123
OFF
d2
d
V
CC
= 5 V
Ta = 25°C
R
L
= 47 kΩ
d
2
= 0±1.1 mm
Output transistor
162 EE-SX460-P1 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX460-P1
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Snap-in mounting model.
•Mounts to 0.8- to 1.6-mm-thick panels.
•High resolution (aperture width of 0.5 mm)
•With a 5-mm-wide slot.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s EI-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON EE-1005 (with harness)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
171826-3
(Tyco Electronics AMP)
Optical
axis
0.5 (Aperture
width)
Optical
axis
Two,
R1
Mounting face
15±0.2
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rate d val u e
Power supply voltage VCC 10 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –20°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 30 mA max. With and without incident
Low-level outp ut voltage VOL 0.3 V max. IOUT = 16 mA with incident
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
t = 0.2 mm
0.5 mm
0.5 mm
Be sure to read Precautions on page 27.
EE-SX460-P1 Photomicrosensor (Transmissive) 163
■Engineering Data
Wiring
■Recommended Mounting Hole Dimensions and Mounting and Dismounting Method
The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick
panels.
Refer to the above mounting hole dimensions and open the
mounting holes in the panel to which the Photomicrosensor will be
mounted.
Insert into the holes the Photomicrosensor’s mounting portions with
a force of three to five kilograms but do not press in the
Photomicrosensor at one time. The Photomicrosensor can be easily
mounted by inserting the mounting portions halfway and then slowly
pressing the Photomicrosensor onto the panel.
There are two ways to dismount the Photomicrosensor. Refer to the
following.
Dismounting with Screwdriver
Press the mounting hooks of the Photomicrosensor with a flat-blade
screwdriver as shown in the following illustration and pull up the
Photomicrosensor.
Dismounting by Hand
Squeeze the mounting tabs as shown in the following illustration and
press the mounting tabs upwards.
Pressed mounting holes are ideal for mounting the
Photomicrosensor. When mounting the Photomicrosensor to a panel
that has pressed mounting holes for the Photomicrosensor, be sure
to mount the Photomicrosensor on the pressing side of the panel,
otherwise it may be difficult to mount the Photomicrosensor and an
insertion force of five to six kilograms may be required.
When mounting the Photomicrosensor to a panel that has mounting
holes opened by pressing, make sure that the mounting holes have
no burrs, otherwise the lock mechanism of the Photomicrosensor will
not work perfectly. After mounting the Photomicrosensor to a panel,
be sure to check if the lock mechanism is working perfectly.
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output transistor
Distance d (mm)
d1 = 0±0.3 mm VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Center of optical axis
Light interrupting plate
EE-1005 Connector
(1) (2) (3)
1,000±20
Sensing Position Characteristics
(Typical)
Output transistor
Distance d (mm)
Center of optical axis
ON
−3−2−10123
OFF
d2
d
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0±1.1 mm
No. Name Model Quantity Maker
1 Receptacle
housing
171822-3 1 Tyco Electronics
AMP
2 Receptacle
contact
170262-1 3 Tyco Electronics
AMP
3 Lead wire UL1007 AWG24 3 ---
Connector
circuit no. Lead wire color Output when connected to
EE-SX460-P1
1Red V
CC
2 Orange OUT
3 Yellow GND
Center of sensing
slot
Optical axis
Sensor edge Sensor edge on
connector side
Flat-blade
screwdriver
Mounting hook Panel
Flat-blade
screwdrive
r
Mountin
g
hook
EE-SX460-P1
(1)
(2)
(1)
(2)
Panel (1) (1)
EE-SX460-P1
(2)
Panel
This tapered portion must be on
the lower side of the panel, other
wise the Photomicrosensor will
not be locked in. Mounting tab
EE-SX460-P1
164 EE-SX461-P11 Photomicrosensor (Transmissive)
Photomicrosenso r (Transmissive)
EE-SX461-P11
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Snap-in-mounting model.
•Mounts to 0.8- to 1.6-mm-thick panels.
•With a 15-mm-wide slot.
•Photo IC output signals directly connect with C-MOS and TTL.
•Connects to Tyco Electronics AMP’s EI-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
O
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON EE-1005
(
with harness
)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
171826-3 (Tyco
Electronics AMP)
2 (Aperture
width)
Optical
axis
Two, R1
(15)
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Pow e r s upply voltag e VCC 7 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –20°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 35 mA max. With and without incident
Low-level outp ut voltage VOL 0.3 V max. IOUT = 16 mA with incident
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
t = 0.2 mm
0.5 mm
0.5 mm
Disk
Be sure to read Precautions on page 27.
EE-SX461-P11 Photomicrosensor (Transmissive) 165
■Engineering Data
Wiring
■Recommended Mounting Hole Dimensions and Mounting and Dismounting Method
The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick
panels.
Refer to the above mounting hole dimensions and open the
mounting holes in the panel to which the Photomicrosensor will be
mounted.
Insert into the holes the Photomicrosensor’s mounting portions with
a force of three to five kilograms but do not press in the
Photomicrosensor at one time. The Photomicrosensor can be easily
mounted by inserting the mounting portions halfway and then slowly
pressing the Photomicrosensor onto the panel.
There are two ways to dismount the Photomicrosensor. Refer to the
following.
Dismounting with Screwdriver
Press the mounting hooks of the Photomicrosensor with a flat-blade
screwdriver as shown in the following illustration and pull up the
Photomicrosensor.
Dismounting by Hand
Squeeze the mounting tabs as shown in the following illustration and
press the mounting tabs upwards.
Pressed mounting holes are ideal for mounting the
Photomicrosensor. When mounting the Photomicrosensor to a panel
that has pressed mounting holes for the Photomicrosensor, be sure
to mount the Photomicrosensor on the pressing side of the panel,
otherwise it may be difficult to mount the Photomicrosensor and an
insertion force of five to six kilograms may be required.
When mounting the Photomicrosensor to a panel that has mounting
holes opened by pressing, make sure that the mounting holes have
no burrs, otherwise the lock mechanism of the Photomicrosensor will
not work perfectly. After mounting the Photomicrosensor to a panel,
be sure to check if the lock mechanism is working perfectly.
Output Allowable Dissipation vs.
Ambient Temperature Characteristics Sensing Position Characteristics
(Typical)
Distance d (mm)
EE-1005 Connector
(1) (2) (3)
Center of optical axis
Light interrupting plate
Ambient temperature Ta (°C)
Output allowable dissipation Pc (mW)
d1 = 0±1.1 mm VCC = 5 V
Ta = 25°C
RL = 47 kΩ
1,000±20
Sensing Position Characteristics
(Typical)
Output transistor
Distance d (mm)
Center of optical axis
ON
−3−2−10123
OFF
d2
d
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0±1.1 mm
Output transistor
No. Name Model Quantity Maker
1 Receptacle
housing
171822-3 1 Tyco Electronics
AMP
2 Receptacle
contact
170262-1 3 Tyco Electronics
AMP
3 Lead wire UL1007 AWG24 3 ---
Connector
circuit no. Lead wire color Output when connected to
EE-SX461-P11
1Red V
CC
2 Orange OUT
3 Yellow GND
Optical axis
Sensor edge
Center of
sensing
slot
Sensor edge
(to post header)
Flat-blade
screwdriver
Mounting hook Panel Mounting hoo
k
Flat-blade
screwdriver
EE-SX461-P11
(1)
(2)
(1)
(2)
Panel (1) (1)
EE-SX461-P11
(2)
Panel
Mounting tab
This tapered portion must be on
the lower side of the panel,
otherwise the Photomicrosensor
will not be locked in.
EE-SX461-P11
166 EE-SA407-P2 Photomicrosensor (Actuator Mounted)
Photomicrosenso r (Actuator Mounted)
EE-SA407-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•An actuator can be attached.
•Snap-in mounting model.
•Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
•High resolution with a 0.5-mm-wide sensing aperture.
•With a 3.6-mm-wide slot.
•Photo IC output signals directly connect with logic circuit and TTL.
•Connects to Tyco Electronics AMP’s CT-series connectors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
■Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Internal Circuit
Terminal No. Name
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
V
G
0
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
175778-3 (crimp connector)
173977-3
(p
ress-fit connector
)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
0.5 (Aperture width)
Optical axis
2.2+0.1
0 dia.
292250-3
(Tyco Electronics AMP)
(see note)
Note: The dimension is specified
by datum A only.
Unless otherwise specified, the
tolerances are as shown below.
▲
▲
Item Sym b ol Rate d val u e
Power supply voltage VCC 7 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permi ssi ble output dissipation POUT 250 mW (see
note)
Ambient temper-
ature Operating Topr –20°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol ---
Item Symbol Value Condition
Cur r e nt c ons um ption ICC 30 mA max. With and without incident
Low-level outp ut voltage VOL 0.35 V max. IOUT = 16 mA with incident
High-level output vol tag e VOH (VCC x 0.9) V min. VOUT = VCC without incident, RL = 47 kΩ
Response frequency f 3 kHz min. VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
2.1 mm
0.5 mm
0.5 mm
t = 0.2 mm
Disk
Be sure to read Precautions on page 27.
EE-SA407-P2 Photomicrosensor (Actuator Mounted) 167
■Engineering Data
■Recommended Mounting Holes
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
•When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
•The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi-
crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
•After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
•When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi-
crosensor may come fall out.
Output Allowable Dissipation vs.
Ambient Temperature Characteristics Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output transistor
Distance d (mm)
Center of optical axis
Light interrupting plate
Ambient temperature Ta (°C)
d1 = 0±0.3 mm VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Sensing Position Characteristics
(Typical)
Output transistor
Distance d (mm)
Center of optical axis
ON
−3−2−10123
OFF
d2
d
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0±1.1 mm
t = 1.0 mm t = 1.2 mm
t = 1.6 mm
17.1±0.1
(for t =1.0,1.2,1.6)
Actuator Dimensions 3 0
−0.2 dia.
2±0.1 dia. Note: 1. Make sure that the portions
marked with dotted lines
have no burrs.
2. The material of the actuator
must be selected by
considering the infrared
permeability of the actuator.
168 EE-SPX415-P2 Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier
Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier
EE-SPX415-P2
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Separate LED/Photo IC combinations with 12-mm slot.
•Uses light modulation via built-in amplifier IC.
•Applicable to the PA connector series from JST (Japan Solderless
Terminal).
■Absolute Maximum Ratings (Ta = 25°C)
Internal Circuit
Terminal No. Name
V Power supply (Vcc)
O1 Vout1 (Optical axis 1)
O2 Vout2 (Optical axis 2)
G Ground (GND)
Recommended Mating Connectors
JST (Japan Solderless Terminal)
PAP-04V-S
Cross section D-D Cross section A-A
Cross section C-C
Cross section B-B
B04B-PASK Japan Solderless Terminal (JST)
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
30 < mm ≤ 50 ±0.8
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Supply voltage Vcc 16 VDC
Output voltage Vout 16 V
Out p ut c u r r e nt Iout 50 mA
Operating temperature Topr –10°C to 60°C
Storage temperature Tstg –40°C to 80°C
Be sure to read Precautions on page 27.
EE-SPX415-P2 Light Modulation Photomicrosensor (Transmissive) with Built-in Amplifier 169
■Electrical and Optical Characteristics (Ta = 25°C, Vcc = 12 V±10%)
Note: The value indicated is that measured by rotating the disk as shown below.
■Engineering Data
Item S y m bol Limits Unit Testing condit ions
MIN. TYP. MAX.
Current consumption Icc --- --- 35 mA With/without object
Low level output voltage VOL 0.01 0.2 0.4 V Iout = 20 mA
without object
High level output current IOH 0 --- 40 mA Vout = 12 V
with object
Amb ie n t il lumi na tio n --- 0 --- 3,000 lx Sunlight and fluorescent
light
Response frequency f 500 --- --- Hz Vcc0 = Vcc1 = Vcc2 =
12 VDC
RL = 1.2 kΩ (see note)
Repetitive Sensing Position Characteristics for OUT1
(in horizontal direction, typical) Repetitive Sensing Position Characteristics for OUT2
(in horizontal direction, typical)
Distance (mm)
Output transistor
Distance (mm)
Output transistor
170 EE-SY110 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY110
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact reflective model with a molded housing.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Four, R1.5
Four, 0.25
Four, 0.5
15 to 18
15.2±0.2
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –40°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL200 µA min., 2,000 µA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY110 Photomicrosensor (Reflective) 171
■Engineering Data
VCE = 10 V
IF = 20 mA
d = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
d
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Load resistance RL (kΩ)
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
Input
Output
Input
Output
90 %
10 %
0 x
IF = 20 mA
VCE = 5 V
Vcc = 5 V
Ta = 25°C
Ta = 25°C
d = 5 mm
Sensing object: White paper with a
reflection factor of 90%
IF = 20 mA
IF = 10 mA
IF = 30 mA
IF = 40 mA
Distance d (mm)
Sensing Position Characteristics
(Typical)
Sensing object: White paper
with a reflection factor of 90%
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object:
White paper
with a reflection
factor of 90%
Direction
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 5 mm
Relative light current IL (%)
Dark current ID (nA)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%)
Light current IL (µA)
d = 5 mm
VCE = 10 V
VCE = 10 V
172 EE-SY113 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY113
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact reflective Photomicrosensor (EE-SY110) with a molded
housing and a dust-tight cover.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Four, 0.5
Four, 0.25
15 to 18
Notch for directional discrimination
Unless otherwise specified, the
tolerances are as shown below.
2.5
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –40°C to 80°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL160 µA min., 1,600 µA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY113 Photomicrosensor (Reflective) 173
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Distance d (mm)
Sensing Position Characteristics
(Typical)
Ta = 25°C
VCE = 10 V
IF = 20 mA
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Direction
Sensing object:
White paper
with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
d1
d2
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance RL (kΩ)
Angle deviation θ (°)
0 x
IF = 20 mA
VCE = 5 V
Vcc = 5 V
Ta = 25°C
IF = 20 mA
IF = 10 mA
IF = 30 mA
IF = 40 mA
Ta = 25°C
IF = 20 mA
VCE = 10 V
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 4.4 mm
Relative light current IL (%)
Dark current ID (nA)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%)
Light current IL (µA)
d = 4.4 mm
VCE = 10 V
VCE = 10 V
174 EE-SY124 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY124
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact model.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
K
A
C
E
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP950 nm typ. IF = 4 mA
Detector Light current IL50 µA min., 300 µA max. IF = 4 mA, VCE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 200 nA max. IF =4 mA, VCE = 2 V with no reflection
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP930 nm typ. VCE = 10 V
Rising tim e tr 35 µs typ. VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Falling ti me tf 25 µs typ. VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Be sure to read Precautions on page 27.
EE-SY124 Photomicrosensor (Reflective) 175
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Response Time Measurement
Circuit
Light current IL (mA)
Distance d (mm)
Relative Light Current vs.
Card Moving Distance (1)
Card moving distance L (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Distance Characteristics
(Typical)
Dark Current ICEO (A)
Light current IL (µA)
Relative Collector Current vs.
Card Moving Distance (2)
Card movin
g
distance L
(
mm
)
Ta = 25°C
VCE = 2 V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Ta = 25°C
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Response time tr (µs)
TA = 25°C
IF = 4 mA
VCE = 2 V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
IF = 4 mA
VCE = 2 V
Relative light current IL (%)
Relative light current IL (%)
Ambient temperature Ta (°C)
Light current IL (µA)
Relative light current IL (%) Response time tr (µs)
IF
PC
176 EE-SY125 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY125
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact model.
•PCB surface mounting type
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
A
K
C
E
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO 5 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP950 nm typ. IF = 4 mA
Detector Light current IL50 µA min., 300 µA max. IF = 4 mA, VCE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 200 nA max. IF =4 mA, VCE = 2 V with no reflection
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP930 nm typ. VCE = 10 V
Rising tim e tr 35 µs typ. VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Falling ti me tf 25 µs typ. VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Be sure to read Precautions on page 27.
EE-SY125 Photomicrosensor (Reflective) 177
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Response Time Measurement
Circuit
Distance d (mm)
Relative Light Current vs.
Card Moving Distance (1)
Input
Output
Input
Output
90 %
10 %
Sensing Distance Characteristics
(Typical)
Relative Collector Current vs.
Card Moving Distance (2)
d = 1 mm
Sensing object:
Aluminum-deposited
surface
d = 1 mm
Sensing object:
Aluminum-deposited
surface
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Light current IL (mA)
Card moving distance L (mm)
Dark Current ICEO (A)
Light current IL (µA)
Card movin
g
distance L
(
mm
)
Ta = 25°C
VCE = 2 V
Ta = 25°C
Response time tr (µs)
TA = 25°C
IF = 4 mA
VCE = 2 V
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
IF = 4 mA
VCE = 2 V
Relative light current IL (%)
Relative light current IL (%)
Ambient temperature Ta (°C)
Light current IL (µA)
Relative light current IL (%) Response time tr (µs)
IF
PC
178 EE-SY125 Photomicrosensor (Reflective)
■Packaging Specifications
Packaging
Packaging a mount
•Put a maximum of 50 Sensors into one sleeve.
•Put a maximum of 2,000 Sensors (40 sleeves of 50 Sensors each)
into one box.
Packaging fo r m
•Stack 10 levels of Sensor-containing sleeves into 4 rows, seal them
inside an aluminum laminate bag, then pack them into an outer
box.
•Close the lid of the outer box, and seal it with tape.
Markings
•Mark the outer box with the model number, lot number, and quan-
tity of sensors.
Label
Outer box
Green stopper
Sleeve
Sensor
Yellow stopper
Sleeves
(4 rows × 10 levels = 40 sleeves)
EE-SY125 Photomicrosensor (Reflective) 179
Precautions
■Soldering Information
Reflow soldering
•Set the reflow oven so that the temperature profile shown in the fol-
lowing chart is obtained for the upper surface of the product being
soldered.
Manual sold ering
•Use a soldering iron of less than 25 W, and keep the temperature
of the iron tip at 260°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature
before handling it.
Storage
To protect the product from the effects of humidity until the package
is opened, dry-box storage is recommended. If this is not possible,
store the product under the following conditions:
Temperature: 5 to 30°C
Humidity: 70% max.
The product is packed in a humidity-proof envelope. Reflow
soldering must be done within 48 hours after opening the envelope,
during which time the product must be stored at 5 to 25°C at 60%
maximum humidity.
If it is necessary to store the product after opening the envelope, use
dry-box storage or reseal the envelope at 5 to 30°C at 70%
maximum humidity within two weeks.
Baking
If a product has remained packed in a humidity-proof envelope for six
months or more, or if more than 48 hours have lapsed since the
envelope was opened, bake the product under the following
conditions before use only one time:
Bulk:125°C for 16 to 24 hours
10 sec. max.
240°C max.
Time
120 sec. max.
1 to 4°C/s max.
60 sec. max.
1 to 4°C/s
max.
Temperature
▲
▲
90 sec. max.
1 to 4°C/s
200°C
165°C max.
180 EE-SY169 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY169
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-quality model with plastic lenses.
•Highly precise sensing range with a tolerance of ±0.6 mm horizon-
tally and vertically.
•With a red LED sensing dyestuff-type inks.
•Limited reflective model.
•For lesser LED forward current the EE-SY169B would be a better
choice.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Two, C0.2
1±0.1 dia.
1±0.1 dia.
(see note)
(see note)
Surface A
Unless otherwise specified, the
tolerances are as shown below.
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF40 mA
(see note 1)
Pulse forward cur-
rent IFP 300 mA
(see note 2)
Reverse voltage VR3 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr 0°C to 70°C
Storage Tstg –20°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.85 V typ., 2.3 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 3 V
Peak emi ssion wavelength λP660 nm typ. IF = 20 mA
Detector Li ght current IL160 µA min., 2,000 µA max. IF = 20 mA, VCE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 5 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 5 V with no reflection
Collector–Emitter saturated
voltage VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 5 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY169 Photomicrosensor (Reflective) 181
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Load resistance RL (kΩ)
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
Input
Output
Input
Output
90 %
10 %
V
CE
= 10 V
0lx
Vcc = 5 V
Distance d (mm)
Sensing Position Characteristics
(Typical)
Dark Current ID (nA)
d = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 5 mA
d = 4 mm
Sensing object:
White paper with a
reflection factor of
90%
Ta = 25°C
Sen-
sor
Direction
Sensing object: White
paper with a reflection
factor of 90%
d = 0
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
°
C
d
1
= 4 mm
Sensing
object
Sensing object:
White paper with
a reflection factor
of 90%
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
Direction
Sen-
sor
Distance d2 (mm)
Sensing Position Characteristics
(Typical)
d = 3 mm
d = 4 mm
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
d = 3 mm
d = 4 mm
d = 5 mm
Ta = 25°
IF = 20 mA VCE
= 10 V
Sensing object:
White paper with
a reflection fac
tor of 90%
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
V
CE
= 5 V
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
I
F
= 20 mA
V
CE
= 5 V
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (µs)
Relative light current IL (%)
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Relative light current IL (%)
Light current IL (µA)
Ta = 25°C
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Ta = 25°C
182 EE-SY169A Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY169A
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-quality model with plastic lenses.
•Highly precise sensing range with a tolerance of ±0.6 mm horizon-
tally and vertically.
•Convergent reflective model with infrared LED.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
A
K
C
E
Two, C0.2
1±0.1 dia.
1±0.1 dia.
(see note)
(see note)
Surface A
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR3 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr 0°C to 70°C
Storage Tstg –20°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.5 V max. IF = 30 mA
Reverse current IR10 µA max. VR = 4 V
Peak emi ssion wavelength λP920 nm typ. IF = 20 mA
Detector Light current IL160 µA min., 2,000 µA max. IF = 20 mA, VCE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 5 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 5 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 5 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY169A Photomicrosensor (Reflective) 183
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Vcc = 5 V
Ta = 25°C
Distance d (mm)
Sensing Position Characteristics
(Typical) Sensing Position Characteristics
(Typical)
d = 3 mm
d = 4 mm
d = 5 mm
Sensing Angle Characteristics
(Typical)
I
F
= 20 mA
V
CE
= 5 V
Ta = 25°C
Sensing object: White
paper with a reflection
factor of 90%
d
1
= 3.5 mm
d
1
= 4.0 mm
d
1
= 4.5 mm
Sensing object:
White paper with
a reflection factor
of 90%
d = 0
d = 3 mm
d = 4 mm
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
Load resistance RL (kΩ)
Distance d2 (mm)
Angle deviation θ (°)
V
CE
= 10 V
0lx
Dark Current ID (nA)
d = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 5 mA
d = 4 mm
Ta = 25°C
Sen-
sor
Direction
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
°
C
d
1
= 4 mm
Sensing
object
Direction
Sen-
sor
Distance d2 (mm)
Ta = 25°
IF = 20 mA VCE
= 10 V
Angle deviation θ (°)
V
CE
= 5 V
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
I
F
= 20 mA
V
CE
= 5 V
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (µs)
Relative light current IL (%)
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Relative light current IL (%)
Light current IL (µA)
Relative light current IL (%)
Sensing object:
White paper
with a reflection
factor of 90%
Sensing object:
White paper
with a reflection
factor of 90%
184 EE-SY169B Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY169B
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-quality model with plastic lenses.
•Highly precise sensing range with a tolerance of ±0.6 mm horizon-
tally and vertically.
•With a red LED sensing dyestuff-type links.
•Limited reflective model
•Higher gain than EE-SY169.
•Possible to get the same IL as EE-SY169 with IF=10 mA. (half of
EE-SY169 condition)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
A
K
C
E
Two, C0.2
1±0.1 dia.
1±
0.1 dia.
(see note)
(see note)
Surface A
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
0.5
1.8
3.2
6±0.3
11
12.5±0.3
8±0.3
3±0.5
4.8
9.2±0.5
3±0.5
2.5
7±0.13.2
0.5
3
A
KE
C
2.5
Item Symbol Rated value
Emitter Forward current IF40 mA
(see note 1)
Pulse forward cur-
rent IFP 300 mA
(see note 2)
Reverse voltage VR3 V
Detector Collector–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr 0°C to 70°C
Storage Tstg –20°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.85 V typ., 2.3 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 3 V
Peak emi ssion wavelength λP660 nm typ. IF = 20 mA
Detector Light current IL160 µA min., 2,000 µA max. IF = 10 mA, VCE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 5 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 5 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 5 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY169B Photomicrosensor (Reflective) 185
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Distance d (mm)
Sensing Position Characteristics
(Typical) Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Load resistance RL (kΩ)
Distance d2 (mm)
Angle deviation θ (°)
Dark Current ID (nA)
Sen-
sor
Distance d2 (mm)
Angle deviation θ (°)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%)
Light current IL (µA)
Relative light current IL (%)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
PC
IF
120
100
80
60
40
20
00
1,400
1,200
1,000
800
600
400
200
010 20 30 40 50 60
d = 4 mm
V
CE
= 5 V
0
1,600
1,400
1,200
1,000
800
600
400
200
05 1015202530
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
IF = 2.5 mA
d = 4 mm
Ta = 25°C
Sensing object: White
paper with a reflection
factor of 90%
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
I
F
= 10 mA
V
CE
= 5 V
10,000
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 010 20 30 40 50 60 70 80 90
V
CE
= 10 V
0lx
10,000
0.01
tr
tf
0.1 10
1
1,000
100
10
1
Vcc = 5 V
Ta = 25°C
600
500
400
300
200
100
0
012345678910
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
120
100
80
60
40
20
0123456
d1
d2
I
F
= 10 mA
V
CE
= 5 V
Ta = 25°C
d
1
= 3.5 mm
d
1
= 4.0 mm
d
1
= 4.5 mm
Sensing object: White
paper with a reflection
factor of 90%
Direction
120
100
80
60
40
20
05678910111213
d1
d2
Sen-
sor
Direction
d = 0 Sensing
object
I
F
= 10 mA
V
CE
= 5 V
Ta = 25
°
C
d
1
= 4 mm
Sensing object:
White paper with
a reflection factor
of 90%
−30 −20 −10 0 10 20
d = 3 mm
d = 4 mm
d = 5 mm
Ta = 25°C
IF = 10 mA
VCE = 10 V
d
240
220
200
180
160
140
120
100
80
60
40
20
0
110
105
100
95
90
85
80
−20 −10 0 10 20
d
d = 3 mm
d = 4 mm
d = 5 mm
Ta = 25°
IF = 10 mA
VCE = 10 V
t
t ft r
t
0
VCC
RL
0
IL
Sensing object:
White paper
with a reflection
factor of 90%
Sensor
Sensing object:
White paper with
a reflection factor
of 90%
186 EE-SY171 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY171
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•3-mm-tall, thin model
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
A
K
C
E
Two, 2 dia. Two, 1.2 dia.
Four, 0.25
0° to 30°
Four, 0.5
Anode mark
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –40°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Li ght current IL50 µA min., 500 µA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of 90%,
d = 3.5 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 10 V with no reflection
Collector–Emitter saturated
voltage VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SY171 Photomicrosensor (Reflective) 187
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Distance d (mm)
Sensing Position Characteristics
(Typical)
Sensing object:
White paper with a
reflection factor of
90%
Ta = 25°C
VCE = 10 V
d = 3.5 mm
Sensing object: White
paper with a reflection
factor of 90%
IF = 20 mA
IF = 10 mA
IF = 30 mA
IF = 40 mA
Ta = 25°C
d = 3.5 mm
Sensing object: White
paper with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
d1 = 3 mm
d1 = 4 mm
d1 = 5 mm
Vcc = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
Sensing object:
White paper with
a reflection factor
of 90%
Load resistance RL (kΩ)
Distance d2 (mm) Angle deviation θ (°)
VCE = 10 V
0lx
Dark Current ID (nA)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (µA)
Ambient temperature Ta (°C)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%) Response time tr, tf (µs)
Relative light current IL (%)
Light current IL (µA)
IF = 20 mA
VCE = 10 V
Ta = 2 5 °C
d = 3.5 mm
188 EE-SY193 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY193
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact model.
•PCB surface mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
A
K
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended
soldering patterns
Unless otherwise specified, the
tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current IF25 mA
(see note 1)
Pulse forward cur-
rent IFP 100 mA
(see note 2)
Reverse voltage VR6 V
Detector Collector–Emitter
voltage VCEO 18 V
Emitter–Collector
voltage VECO 4 V
Collector current IC20 mA
Collector dissipa-
tion PC75 mW
(see note 1)
Ambient tem-
perature Operating Topr –30°C to 80°C
Storage Tstg –40°C to 85°C
Reflow soldering Tsol 220°C
(see note 3)
Manual soldering Tsol 300°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 4 mA
Reverse current IR10 µA max. VR = 6 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL100 µA min., 150 µA typ.,
360 µA max.
Aluminum-deposited surface,
IF = 4 mA, VCE = 2 V, d = 1 mm (see
note)
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 1 µA max. IF = 4 mA, VCE = 2 V
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP900 nm typ. ---
Rising tim e tr 25 µs typ. VCC = 2 V, RL = 1 kΩ,
Falling ti me tf 30 µs typ. VCC = 2 V, RL = 1 kΩ,
Be sure to read Precautions on page 27.
EE-SY193 Photomicrosensor (Reflective) 189
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical) Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Distance Characteristics
(Typical)
Aluminum deposited
surface
Aluminum deposited
surface
Aluminum deposited
surface Aluminum deposited
surface
1 mm
Load resistance RL (kΩ)
Dark Current ID (nA)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (µA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Ambient temperature Ta (°C)
Response time tr, tf (µs)
Relative light current IL (%)
Forward current IF (mA)
Light current IL (mA)
Relative light current IL (%)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
190 EE-SY193 Photomicrosensor (Reflective)
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
Tap e qu antity
3,000 pcs./reel
Terminating part
(40 mm min.)
Pull-out direction
Empty
(40 mm min.)
Parts mounted Leading part
(400 mm min.)
EE-SY193 Photomicrosensor (Reflective) 191
Precautions
■Soldering Information
Reflow soldering
•The following soldering paste is recommended:
Melting temperature: 178 to 192°C
•The recommended thickness of the metal mask for screen printing
is between 0.2 and 0.25 mm.
•Set the reflow oven so that the temperature profile shown in the
following chart is obtained for the upper surface of the product
being soldered.
Manual sold ering
•Use”Sn 60” (60% tin and 40% lead) or solder with silver content.
•Use a soldering iron of less than 25 W, and keep the temperature
of the iron tip at 300°C or below.
•Solder each point for a maximum of three seconds.
•After soldering, allow the product to return to room temperature
before handling it.
Storage
To protect the product from the effects of humidity until the package
is opened, dry-box storage is recommended. If this is not possible,
store the product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow
soldering must be done within 48 hours after opening the envelope,
during which time the product must be stored under 30°C at 80%
maximum humidity.
If it is necessary to store the product after opening the envelope, use
dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six
months or more, or if more than 48 hours have lapsed since the
envelope was opened, bake the product under the following
conditions before use:
Reel:60°C for 24 hours or more
Bulk:80°C for 24 hours or more
10 sec. max.
220°C max.
Time
60 to 120 sec
Temperature
4°C/s max.
40 sec. max.
4°C/s max.
140 to 160°C
192 EE-SB5(-B) Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SB5(-B)
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Dust-tight construction.
•With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
•Mounted with M3 screws.
•Model with soldering terminals (EE-SB5).
•Model with PCB terminals (EE-SB5-B).
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Optical axis Optical axis
Two, 3. 2±0.2 dia. holes
Four, 0.5
Four, 0.25
EE-SB5 EE-SB5-B
11.5±0.2
9±0.2
7.62±0.3 2.54±0.2 2.54±0.2
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 80°C
Storage Tstg –30°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL200 µA min., 2,000 µA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SB5(-B) Photomicrosensor (Reflective) 193
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
Input
Output
Input
Output
90 %
10 %
V
CE
= 10 V
0lx
I
F
= 20 mA
V
CE
= 5 V
V
CC
= 5 V
Ta = 25°C
Distance d (mm)
Sensing Position Characteristics
(Typical)
Sensing object:
White paper with
a reflection fac
tor of 90%
Sensing object:
White paper with
a reflection factor
of 90%
I
F
= 20 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 40 mA
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Sensing object: White paper
with a reflection factor of 90%
Sensing object: White paper
with a reflection factor of 90%
Ta = 25°C
IF = 20 mA
VCE = 10 V
d = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
d
1
= 5 mm
Sensing Position Characteristics
(Typical)
Load resistance RL (kΩ)
Dark Current ID (nA)
Ambient temperature Ta (°C)
Forward current IF (mA)
Forward current IF (mA) Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%) Light current IL (mA)
Relative light current IL (%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
d
1
= 5 mm
Distance d2 (mm)
d = 5 mm
Ta = 25°C
Ta = 25°C
V
CE
= 10 V
d = 5 mm
Relative light current IL (%)
Light current IL (µA)
Sensing
object: White
paper with a
reflection
factor of 90%
Collector dissipation PC (mW)
194 EE-SF5(-B) Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SF5(-B)
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Dust-tight construction.
•With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
•Mounted with M2 screws.
•Model with soldering terminals (EE-SF5).
•Model with PCB terminals (EE-SF5-B).
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Matted
1.9 dia. 2.2±0.2 dia. hole
Four, 0.25
Four,
0.5
Four,
1.5
EE-SF5 EE-SF5-B
2.54±0.2
2.54
7.62±0.3
7.6±1
Unless otherwise specified, the
tolerances are as shown below.
Item Sym b ol Rat e d va lu e
Emitter Forwa rd cu r r e nt IF50 mA
(see note 1)
Pulse forward cur-
rent IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collecto r–Emitter
voltage VCEO 30 V
Emitter–Collector
voltage VECO ---
Collector current IC20 mA
Collector dissipa-
tion PC100 mW
(see note 1)
Ambient tem-
perature Operating Topr –25°C to 80°C
Storage Tstg –30°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL200 µA min., 2,000 µA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 µA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age VCE (sat) --- ---
P eak spectral sensitivity wave-
length λP850 nm typ. VCE = 10 V
Rising tim e tr 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling ti me tf 30 µs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 27.
EE-SF5(-B) Photomicrosensor (Reflective) 195
■Engineering Data
Sensing
object
Forward Current vs. Collector
Dissipation Temperature Rating Light Current vs. Forward Current
Characteristics (Typical) Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Distance d (mm)
Sensing Position Characteristics
(Typical) Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Sensing object:
White paper with a
reflection factor of
90%
Ta = 25°C
VCE = 10 V
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
d1 =
5 mm
Phototransistor side
LED side
(a) : d1 = 3 mm
(b) : d1 = 5 mm
d1
d = 5 mm
Distance d2 (mm)
Angle deviation θ (°)
VCE = 10 V
0lx
IF = 20 mA
VCE = 5 V
VCC = 5 V
Ta = 25°C
Relative light current IL (%)
Sensing object:
White paper with
a reflection factor
of 90%
IF = 20 mA
IF = 10 mA
IF = 30 mA
IF = 40 mA
Ta = 25°C
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
Ta = 25°C
IF = 20 mA
VCE = 10 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
Light current IL (µA)
Load resistance RL (kΩ)
Dark Current ID (nA)
Ambient temperature Ta (°C)
Forward current IF (mA)
Forward current IF (mA) Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Response time tr, tf (µs)
Relative light current IL (%)
Relative light current IL (%) Light current IL (mA)
Relative light current IL (%)
Distance d2 (mm)
d = 5 mm
Ta = 25°C
Sensing object: White
paper with a reflection
factor of 90%
IF = 20 mA
VCE = 5 V
Ta = 25°C
d1 = 5 mm
Sensing
object: White
paper with a
reflection
factor of 90%
Angle deviation θ (°)
Relative light current IL (%)
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
Ta = 25°C
IF = 20 mA
VCE = 10 V
Collector dissipation PC (mW)
196 EE-SY310/-SY410 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY310/-SY410
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•Compact reflective model with a molded housing.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•Dark ON model (EE-SY310)
•Light ON model (EE-SY410)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
A
K
V
G
O
Five, 0.3
Two. R2Two. R1.5
15 to 18
17 to 24
Five, 0.5
Unless otherwise specified, the
tolerances are as shown below.
4.6
+0.2
−0.3
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Reverse voltage VR4 V
Pulse forward
current IFP 1 A
(see note 2)
Detector Power supp ly
voltage VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible out-
put dissipation POUT 250 mW
(see note 1)
Ambient tempera-
ture Operating Topr –40°C to 75°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 µA typ., 10 µA max. VR = 4 V
P eak emissi on wavelength λP920 nm typ. IF = 20 mA
Detector Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA,
without incident light (EE-SY310), with incident light
(EE-SY410) (see notes 1 and 2)
High-level output voltag e VOH 15 V min. Vcc = 16 V, RL = 1 kΩ,
with incident light (EE-SY310), without incident light
(EE-SY410) (see notes 1 and 2)
Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V
Peak sp ectral sensitivity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 6 mA typ., 15 mA max. VCC = 4.5 to 16 V
LED current whe n out put is ON
Hysteresis ∆H17% typ. V
CC = 4.5 to 16 V
Response frequency f50 Hz min. V
CC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time tPHL (tPLH)20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Be sure to read Precautions on page 27.
EE-SY310/-SY410 Photomicrosensor (Reflective) 197
■Engineering Data
Note: The values in the parentheses apply to the EE-SY410.
Input
Output
Input
Output
EE-SY310 EE-SY410
200 mm dia.
15 mm
5 mm
15 mm
15 mm
(tPLH)(tPHL)(tPLH)(tPHL)
Note: 1. With incident light" denotes the condition whereby
the light reflected by white paper with a reflection
factor of 90% at a sensing distance of 5 mm is
received by the photo IC when the forward current (IF)
of the LED is 20 mA.
2. Sensing object: White paper with a reflection factor of
90% at a sensing distance of 5 mm.
3. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC is turned from ON to OFF and when the
photo IC is turned from OFF to ON.
4. The value of the response frequency is measured by rotating
the disk as shown below.
5. The following illustrations show the definition of response delay
time. The value in the parentheses applies to the EE-SY410.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
LED Current vs. Ambient
Temperature Characteristics
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Sensing Position Characteristics
(Typical)
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
Distance d2 (mm)
Distance d1 (mm)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IOL = 16 mA
IOL = 5 mA
VOUT
(EE-SY3@@)
VOUT
(EE-SY4@@)
tPHL (tPLH)
Sensing object: White
paper with a reflection
factor of 90%
IF = 20 mA
VCC = 5 V
Ta = 25°C
Operate
Release
Current consumption Icc (mA)
Forward voltage VF (V) Supply voltage VCC (V)
Low level output voltage VOL (V)
Supply voltage VCC (V) Forward current IF (mA)
VCC = 5 V
IF = 0 mA (15 mA)
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IOUT (mA) Ambient temperature Ta (°C)
IF = 0 mA (15 mA)
198 EE-SY313/-SY413 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY313/-SY413
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates an IC chip with a built-in detector element and ampli-
fier.
•Incorporates a detector element with a built-in temperature com-
pensation circuit.
•Compact reflective Photomicrosensor (EE-SY310/-SY410) with a
molded housing and a dust-tight cover.
•A wide supply voltage range: 4.5 to 16 VDC
•Directly connects with C-MOS and TTL.
•Dark ON model (EE-SY313)
•Light ON model (EE-SY413)
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
A
K
V
G
O
Five, 0.5
15 to 18
17 to 24
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA (see note 1)
Reverse voltage VR4 V
Pulse forward
current IFP 1 A
(see note 2)
Detector Power supply
voltage VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Permissible
out pu t di s s ipa-
tion
POUT 250 mW (see note 1)
Ambient tem-
perature Operating Topr –40°C to 65°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse curre nt IR0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wave-
length λP920 nm typ. IF = 20 mA
Detector Low-le vel output vol tage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EE-
SY313), with incident light (EE-SY413) (see notes 1 and
2)
High-level output volt-
age VOH 15 V min. Vcc = 16 V, RL = 1 kΩ, with incident light (EE-SY313), with-
out incident light (EE-SY413) (see notes 1 and 2)
Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V
Peak spectral sensitivity
wavelength λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 10 mA typ., 20 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ∆H 17% typ. VCC = 4.5 to 16 V
Response frequency f 50 pps min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
Response delay t ime tPLH (tPHL)3 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
Response delay t ime tPHL (tPLH) 20 µs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
Be sure to read Precautions on page 27.
EE-SY313/-SY413 Photomicrosensor (Reflective) 199
■Engineering Data
Note: The values in the parentheses apply to the EE-SY413.
Input
Output
Input
Output
EE-SY313 EE-SY413
200 mm dia.
15 mm
4.4 mm
15 mm
15 mm
(tPLH)(tPHL)(tPLH)(tPHL)
Note: 1. With incident light" denotes the condition whereby
the light reflected by white paper with a reflection
factor of 90% at a sensing distance of 4.4 mm is
received by the photo IC when the forward current (IF)
of the LED is 20 mA.
2. Sensing object: White paper with a reflection factor of
90% at a sensing distance of 4.4 mm.
3. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC is turned from ON to OFF and when the
photo IC is turned from OFF to ON.
4. The value of the response frequency is measured by rotating
the disk as shown below.
5. The following illustrations show the definition of response delay
time. The value in the parentheses applies to the EE-SY413.
Forward Current vs. Collector
Dissipation Temperature Rating Forward Current vs. Forward
Voltage Characteristics (Typical) LED Current vs. Supply Voltage
(Typical)
LED Current vs. Ambient
Temperature Characteristics
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical) Response Delay Time vs. Forward
Current (Typical) Sensing Position Characteristics
(Typical)
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
tPLH (tPHL)
Sensing object: White
paper with a reflection
factor of 90%
Operate
Release
Distance d2 (mm)
Distance d1 (mm)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IOL = 16 mA
IOL = 5 mA
VOUT
(EE-SY3@@)
VOUT
(EE-SY4@@)
tPHL (tPLH)
IF = 20 mA
VCC = 5 V
Ta = 25°C
Current consumption Icc (mA)
Forward voltage VF (V) Supply voltage VCC (V)
Low level output voltage VOL (V)
Supply voltage VCC (V) Forward current IF (mA)
VCC = 5 V
IF = 0 mA (20 mA)
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (µs)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IC (mA) Ambient temperature Ta (°C)
IF = 0 mA (20 mA)
200 EE-SY313/-SY413 Photomicrosensor (Reflective)
201
Emitters and Detectors
Emitters
EE-L105X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
EE-L109. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Detectors
EE-TP105X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
EE-TP109 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
EE-TP305X/EE-TP405X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
202 EE-L105X Infrared LED
Infrared LED
EE-L105X
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Epoxy resin molded model with narrow sensing angle.
•Dimensions are the same as for EE-TP105X, EE-TP305X, and EE-
TP405X Detectors, making them ideal for combining as Photomi-
crosensors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Light Output Measurement Method
Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard pho-
totransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 × 2 mm in
front of each lens. Measurement is performed in darkness to prevent external light interference.
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
Terminal No. Name
A Anode
K Cathode
Unless otherwise specified, the
tolerances are as shown below.
2.5
2.5
Two, 0.5
0.25 max.
1 max.
0.25
2 dia. R0.8
4±0.2
3.5±0.2
2.5±0.2
2.25±0.2
4.2±0.2
11.2±0.5
2.5±0.2
KA
K
KA
A
Item Symbol Rated value
Forward current IF50 mA (see note 1)
Pulse forward current IFP 1 A (see note 2)
Reverse voltage VR4 V
Ambient tem-
perature Operating Topr –20°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C (see note 3)
Item Symbol Value Condition
Forw a rd voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 30 mA
Light output IO2 mA min., 10 mA typ. IF = 20 mA (see note)
Infrared LED Standard
phototransistor
IF = 20 mA VCE = 10 V
Io
(hFE = 600, VCE = 10 V, IC = 2 mA)
Slit: 2 × 2 mm
6.5 mm
A
Be sure to read Precautions on page 27.
EE-L105X Infrared LED 203
■Engineering Data
Temperature Rating Chart
Forward voltage VF (V)
Ambient temperature Ta (°C)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical) Spectral Sensitivity Waveform
Characteristics (Typical)
80
70
60
50
40
30
20
10
0
−30 −200 20406080−10 10 30 50 70 90 100
100
0.9
70
50
30
7
5
3
1
10
1.0 1.1 1.2 1.3 1.4 1.5
IF (MAX) RATED
Ta = 25°C
(Typical)
120
110
100
90
80
70
60
50
40
30
20
10
00 800 900 1,000 1,100 1,300
Relative output (%)
Waveform λ (nm)
700 1,200
Ta = 25°C
IF = 30 mA
Sensing Angle Characteristics (Typical)
90°
80°
70°
60°
50°
40°
30°
20°
10°
90°
80°
70°
60°
50°
40°
30°
20°10°
Specified angle θ
0°100
80
60
40
20
Relative sensitivity (%)
θ
0°θ
204 EE-L109 Infrared LED
Infrared LED
EE-L109
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Epoxy resin molded model with narrow sensing angle.
•Dimensions are the same as for EE-TP109 Phototransistors, mak-
ing them ideal for combining as Photomicrosensors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Light Output Measurement Method
Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard pho-
totransistor (hFE = 600 at VCE = 10 V IC = 2 mA) with the devices facing each other at a distance of 3.5 mm, with a slit board of 2 × 2 mm in
front of each lens. Measurement is performed in darkness to prevent external light interference.
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
Terminal No. Name
A Anode
K Cathode
Unless otherwise specified, the
tolerances are as shown below.
1
0.25 max.
2.5
0.3 max. 0.5
2.35
0.2 max.
0.25
1.05
1.2 dia.
1.4
±0.1
2
1.8
1.3
0.1
R0.4
3.5
11.2
2.5
1.2
3
1 max.
KA
KA
KA
Item Symbol Rated value
Forward current IF50 mA (see note 1)
Pulse forward current IFP 1 A (see note 2)
Reverse voltage VR4 V
Ambient tem-
perature Operating Topr –20°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C (see note 3)
Item Symbol Value Condition
Forw a rd voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR10 µA max. VR = 4 V
Peak emi ssion wavelength λP940 nm typ. IF = 30 mA
Light output IO2 mA min., 10 mA typ. IF = 20 mA (see note)
Infrared LED Standard
phototransistor
IF = 20 mA VCE = 10 V
Io
(hFE = 600, VCE = 10 V, IC = 2 mA)
Slit: 2 × 2 mm
3.5 mm
A
Be sure to read Precautions on page 27.
EE-L109 Infrared LED 205
■Engineering Data
120
110
100
90
80
70
60
50
40
30
20
10
00 800 900 1,000 1,100 1,300
Relative output (%)
Waveform λ (nm)
700 1,200
Forward voltage VF (V)
Forward current IF (mA)
100
0.9
70
50
30
7
5
3
1
10
1.0 1.1 1.2 1.3 1.4 1.5
Temperature Rating Chart
Ambient temperature Ta (°C)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical) Spectral Sensitivity Waveform
Characteristics (Typical)
IF (MAX) RATED
Ta = 25°C
(Typical)
Ta = 25°C
I
F
= 30 mA
Sensing Angle Characteristics (Typical)
80
70
60
50
40
30
20
10
0
−30 −20 0 20 40 60 80−10 10 30 50 70 90 100
90°
80°
70°
60°
50°
40°
30°
20°
10°
90°
80°
70°
60°
50°
40°
30°
20°10°
Specified angle θ
0°100
80
60
40
20
Relative sensitivity (%)
0°θ
θ
206 EE-TP105X Phototransistor
Phototransistor
EE-TP105X
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Epoxy resin molded model with narrow sensing angle.
•Designed so that the peak spectral sensitivity waveform matches
the peak emission waveform (900 to 940 nm) for ease of use.
•Dimensions are the same as for EE-L105X Infrared LEDs, making
them ideal for combining as Photomicrosensors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Light Output Measurement Method and Conditions (Light Current, Collector–Emitter Saturated Voltage)
Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard pho-
totransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 × 2 mm in
front of each lens. Measurement is performed in darkness to prevent external light interference. (A standard infrared LED has an light output
of 2 mA when measured using the method in the following diagram and a standard phototransistor with VCE = 10 V, IC = 2mA and (hFE = 600.)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
Terminal No. Name
C Collector
E Emitter
Unless otherwise specified, the
tolerances are as shown below.
0.25 max.
1 max.
2.5
Two, 0.5
EC
0.25
4.2±0.2
2 dia.
11.2±0.5
2.5±0.2
2.25±0.2
4±0.2
3.5±0.2
2.5±0.2
R0.8
2.5
EC
EC
Item Symbol Rated value
Collector–Emitter voltage VCEO 30 V (see note 1)
Collector current IC20 mA
Collector dissipation PC100 mW
Ambient tem-
perature Operating Topr –20°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C (see note 2)
Item Symbol Value Condition
Light current IL1 mA min. IF = 20 mA, VCE = 10 V (see note)
Dark current ID200 nA max. VCE = 10 V
Collector–Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 1 mA (see note)
Peak spectral sensitivity wavelength λP850 nm typ. VCE = 10 V
DC amplification rate hFE 800 typ. VCE = 10 V, IL = 2 mA
I
F
= 20 mAV
CE
= 10 V
I
L
V
CE
(sat)
(V
CE
= 10 V, I
C
= 2 mA, h
FE
= 600)
Phototransistor Standard
infrared LED
Slit: 2 × 2 mm
6.5 mm
A V
Be sure to read Precautions on page 27.
EE-TP105X Phototransistor 207
■Engineering Data
Temperature Ratings Chart
Ambient temperature Ta (°C)
I/O Characteristics (Typical) Dark Current Temperature Dependency
(Typical)
Spectral Sensitivity Characteristics
(Typical) Sensing Angle Sensitivity Characteristics (Typical)
140
130
120
100
80
60
40
20
0
-30
Collector dissipation PC (
mW)
-20 0 20 40 60 80-10 10 30 50 70 90 100 0
Forward current IF (mA)
20
18
16
14
12
10
8
6
4
2
0
Light current IL (mA)
10 20 30 50 6051525 4035 55 6545 70
Ta=25°C
VCE=10 V constant
100,000
10,000
1,000
100
10
Dark current ID
(nA
)
-20 0 20 60 80-10 10 4030 70 9050 100
VCE=10 V
0 l x
Typical value
Estimated worst value
Ambient temperature Ta (°C)
120
110
100
90
80
70
60
50
40
30
20
10
00 600 700 800 900 1,200
Relative sensitivity (%)
Wavelength λ (nm)
500 1,000 1,100
Ta=25°C
90°
80°
70°
60°
50°
40°
30°
20°
10°
90°
80°
70°
60°
50°
40°
30°
20°10°
Specified angle θ
0°100
80
60
40
20
Relative sensitivity (%)
θ
0°θ
208 EE-TP109 Phototransistor
Phototransistor
EE-TP109
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Epoxy resin molded model with narrow sensing angle.
•Designed so that the peak spectral sensitivity waveform matches
the peak emission waveform (900 to 940 nm) for ease of use.
•Dimensions are the same as for EE-L109 Infrared LEDs, making
them ideal for combining as Photomicrosensors.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Light Output Measurement Method and Conditions (Light Current, Collector–Emitter Saturated Voltage)
Measurement is performed, as shown in the following diagram, with the optical axis of the Infrared LED aligned with that of a standard pho-
totransistor (hFE = 600, at VCE = 10 V, IC = 2 mA) with the devices facing each other at a distance of 3.5 mm, with a slit board of 2 × 2 mm in
front of each lens. Measurement is performed in darkness to prevent external light interference. (A standard infrared LED has an light output
of 2 mA when measured using the method in the following diagram and a standard phototransistor with VCE = 10 V, IC = 2mA and hFE = 600.)
Internal Circuit
Terminal No. Name
C Collector
E Emitter
0.25 max.
2.35
0.2 max.
R0.4
2.5
0.3 max.
EC
0.5
1.05
0.25
3.5
1.2 dia.
11.2
2.5
1 max.
1.2
31.3
0.1
2
1.8
1
EC
E C
Item Symbol Rated value
Collector–Emitter voltage VCEO 30 V (see note 1)
Collector current IC20 mA
Collector dissipation PC100 mW
Ambient tem-
perature Operating Topr –20°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C (see note 2)
Item Symbol Value Condition
Light c u r r e nt IL0.5 mA min. IF = 20 mA, VCE = 10 V (see note)
Dark current ID200 nA max. VCE = 10 V
Collector–Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA (see note)
Peak sp ectral sensitivity wavelength λP850 nm typ. VCE = 10 V
DC amplification rate hFE 800 typ. VCE = 10 V, IL = 2 mA
I
F
= 20 mAV
CE
= 10 V
I
L
V
CE
(sat)
(V
CE
= 10 V, I
C
= 2 mA, h
FE
= 600)
Phototransistor Standard
infrared LED
Slit: 2 × 2 mm
3.5 mm
A V
Be sure to read Precautions on page 27.
EE-TP109 Phototransistor 209
■Engineering Data
Temperature Ratings Chart
Ambient temperature Ta (°C)
140
130
120
100
80
60
40
20
0
−30
Collector dissipation PC (
mW)
−20 0 20 40 60 80−10 10 30 50 70 90 100
I/O Characteristics (Typical) Dark Current Temperature Dependency
(Typical)
0
Forward current IF (mA)
20
18
16
14
12
10
8
6
4
2
0
Light current IL (mA)
10 20 30 50 6051525 4035 55 6545 70
Ta = 25°C
VCE=10 V constant
100,000
10,000
1,000
100
10
Dark current ID
(nA
)
−20 0 20 60 80−10 10 4030 70 9050 100
VCE=10 V
0lx
TYP
Estimated worst value
Ambient temperature Ta (°C)
Spectral Sensitivity Characteristics
(Typical) Sensing Angle Sensitivity Characteristics (Typical)
120
110
100
90
80
70
60
50
40
30
20
10
00 600 700 800 900 1,200
Relative sensitivity (%)
Wavelength λ (nm)
500 1,000 1,100
Ta = 25°C
90°
80°
70°
60°
50°
40°
30°
20°
10°
90°
80°
70°
60°
50°
40°
30°
20°10°
Specified angle θ
0°100
80
60
40
20
Relative sensitivity (%)
θ
0°θ
°
210 EE-TP305X/EE-TP405X Photo IC
Photo IC
EE-TP305X/EE-TP405X
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Incorporates a built-in amplifier and detector element.
•Superior temperature characteristics with a built-in temperature
compensation circuit.
•A wide supply voltage range of 4.5 to 16 VDC, enabling driving
devices from C-MOS to TTL.
•Superior repetitive accuracy with built-in Schmitt trigger circuit.
•Dark ON model (EE-TP305X) and Light ON model (EE-TP405X)
•Molding dimensions are the same as for EE-L105X Infrared LEDs,
making them ideal for combining as Photomicrosensors with built-in
amplifiers.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: 1. LED Threshold Current Measurement Method and Conditions
Measurement is performed, as shown in the following Fig. A and Fig. B, with the optical axis of the Photo IC aligned with that of a standard
infrared LED with the devices facing each other at a distance of 6.5 mm, with a slit board of 2 × 2 mm in front of each lens. The forward
current IFT of the standard infrared LED is measured when the Photo IC output is inverted. Measurement is performed in darkness to
prevent external light interference. (A standard infrared LED is an infrared LED for which IL = 2 mA when measured using the method
shown in Fig. C with a standard phototransistor in place of the Photo IC shown in Fig. A with VCE = 10 V, IL = 2mA and hFE = 600.)
O Output (OUT)
V Power supply (Vcc)
G Ground (GND)
Terminal No. Name
0.2 max. 0.25 max.
1.25 1.25
1
Three, 0.5
GV
O
0.25
4.2±0.2
11.2±0.5
13.3±0.5
2.5±0.2
2.25±0.2
4±0.2
3.5±0.2
2.5±0.2
2.5
Internal Circuit
G O
V
O
G
V
Item Symbol Rated value
Power supply voltage VCC 16 V
Output voltage VOUT 28 V
Output current IOUT 16 mA
Output permissible dissipation POUT 250 mW (see note 1)
Ambient tempera-
ture Operating Topr –40°C to 85°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C (see note 2)
Item Symbol Value Condition
Power supply voltage VCC 4.5 V min., 16 V max. ---
Low-level output voltage VOL 0.12 V typ., 0.4 V max. VCC = 4.5 to 16 V, IOL =16 mA
High-level output voltag e VOH 15 V min. VCC = 16 V, VOUT = 16 V, RL = 1 kΩ
Current consumption ICC 3.2 mA typ., 10 mA max. VCC = 16 V
LED threshold current IFT (see note 1) 3 mA typ., 8 mA max. VCC = 4.5 to 16 V
Hysteresis ∆H (see note 2) 15% typ. VCC = 4.5 to 16 V
Response delay time tPLH (tPHL)
(see note 3)
3 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time tPHL (tPLH)
(see note 3)
20 µs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Be sure to read Precautions on page 27.
EE-TP305X/EE-TP405X Photo IC 211
2. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED
currents for the two output statuses (turning ON and OFF).
3. The following illustrations show the definition of response delay time.
The electrical characteristics tPHL and tPLH are applicable for the EE-
TP405X.
■Engineering Data
Note: The values in parentheses are for EE-TP405X.
Photo IC Standard Infrared LED
Fig. A Fig. B Fig.C
Slit: 2 × 2 mm
6.5 mm
IF = 20 mA
IFT
VCC
ICC
RLIOL
VOL
VOH
VOUT
GND VCE = 10 V
IL
mA
mA
tPLH
IFIF
tPHL
t
t
Input
EE-TP305X EE-TP405X
0
Output 0tPHL tPLH
t
t
Input 0
Output 0
Temperature Rating Chart
Ambient temperature Ta (°C)
Relative LED Threshold Current vs.
Supply Voltage Characteristics
(Typical)
Relative LED Threshold Current vs.
Ambient Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Low-level Output Voltage vs.
Low-level Output Current
Characteristics (Typical)
300
250
200
150
100
50
0
−40
Permissible output dissipation
P
out
(mW)
−20 0 20 40 60 80 100
PC
120
115
110
105
100
95
90
85
00
Relative LED threshold current IFT (%)
Supply voltage VCC (V)
Ta = 25°C
RL = 1 kΩ
4 6 8 101214165 7 9 11 13 15 17
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC
IFT
RL
GND
120
115
110
105
100
95
90
85
0
-50
Ta = 25°C
RL = 1 kΩ
Relative LED threshold current IFT (%)
-40-200 20406080-30 -10 10 30 50 70 90
IFT OFF (IFT ON)
IFT ON (IFT OFF)
VCC
IFT
RL
GND
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
Current Consumption vs. Supply
Voltage Characteristics (Typical)
1,000
100
101
Low-level output voltage VOL (mV)
Output current IOL (mA)
50010 100
Ta = 25°C
VCC = 5 V
VCC
IOL
VOL
O
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-50
Ambient temperature Ta (°C)
90807060100-10-20-30-40 50403020
VCC = 5 V
IOL=16 mA
IOL=5 mA
VCC
IOL
VOL
O
4
3.5
3
2.5
2
1.5
1
0.5
00
Current consumption ICC (mA)
Supply voltage VCC (V)
Ta = 25°C
IF = 0 mA (15 mA)
4 5 6 7 8 9 10 11 12 13 14 15 16 17
VCC
ICC
GND
Spectral Sensitivity Characteristics (Typical)
120
110
100
90
80
70
60
50
40
30
20
10
00 600 700 800 900 1,200
Relative sensitivity (%)
Waveform λ (nm)
400 500 1,000 1,100
ICC
IOL
RL
VCCV
VOL
VOH
OUTO
GNDG
Temperature
compensation
preamplifier
Schmitt
switching
circuit
Voltage
stabilizer
Low-level output voltage VOL (mV)
Output
transistor
■Internal Circuit Configuration
212 EE-TP305X/EE-TP405X Photo IC
214 Product Quality Control and Reliability
Reliability
■Market Product Quality
OMRON is making efforts so that OMRON’s Photomicrosensors can achieve a failure rate of only 10–7/h.
OMRON will continue improving the quality of its products to comply with OMRON Photomicrosensors users’ demand for product quality while
actively providing good after-sales service.
OMRON’s Photomicrosensors achieved a failure rate of 10 ppm. Figure 5 shows the reasons for the return of OMRON Photomicrosensors.
The reasons for approximately two-thirds of the products sent back were that they were not working or they were destroyed. It is possible that they
were not working or they were destructed because excessive voltages were imposed on them or they were not operated properly according to their
specifications. To solve such problems, OMRON is actively holding preliminary meetings with customers who will use OMRON products and advise
them of the operating conditions required by the products while actively providing them with after-sales service.
■Reliability
The life of any Photomicrosensor depends on the secular changes of the optical output of the LED built into the Photomicrosensor. The following
are the output characteristics of the Photomicrosensor, all of which depend on the optical output of the LED.
OMRON has been conducting reliability tests of each type of Photomicrosensor to check the secular changes of the optical output of the LED built
into the Photomicrosensor.
Phototr a nsistor output Light current (IL)
Photo IC output LED current IFT with the photo IC output ON and OFF
Amplifier output (reflective sensor) Sensing distance d
Element problems
Design problems Other
Destruction
Not working
Component
problems
Figure 5. Reasons for Products Sent Back
(35.3%)
(28.4%)
(27.0%)
(7.2%)
(0.4%) (1.8%)
Product Quality Control and Reliability 215
■Reliability Tests
In principle, Photomicrosensors conform to JEITA standards. The following table shows the details of the reliability tests of Photomicrosensors con-
ducted by OMRON.
Figure 6. Details of Reliability Tests
Classification Test Detail Conforming standard
Thermal con-
dition test Soldering heat
resistivity
Evaluates the soldering heat resistivity of products. Usually,
this test is conducted under the following conditions.
Soldering temperature: 260±5°C
Soldering time:10±1 s
JEITA ED-4701/300
ED-8121
JIS C7021: A1
IEC Pub68-2-20
Thermal shock Evaluates the resistivity of products to radical temperature
changes. Usually, this test is conducted under the following
conditions.
Ta: 0 °C to 100°C (liquid bath) or TstgMIN to TstgMAX (liquid
bath)
JEITA ED-4701/300
JIS C7021: A3
IEC Pub68-2-14
Temperature cy-
cle
JEITA ED-4701/100
JIS C7021: A4
IEC Pub68-2-14
The five-minute storage
periods at a temperature
of 25°C in the test may
be omitted.
Temperature
and humidity cy-
cle
JEITA ED-4701/200
JIS C7021: A5
IEC Pub68-2-4
Mechanical
test Soldering ease Evaluates the terminal soldering ease of the products. Usu-
ally, this test is conducted under the following conditions.
Soldering temperature: 230±5°C
Soldering time: 5±0.5 s
JEITA ED-4701/300
ED-8121
JIS C7021: A2
IEC Pub68-2-20
Terminal
strength
Evaluates the resistivity of the terminals of products to the
force imposed on the terminals while the products are
mounted, wired, or operated.
1. Tension test
On each terminal of products, a specified load is
imposed for 10±1 s in the direction of the terminal.
2. Bending test
On the tip of each terminal of products, a specified load
is imposed to bend the terminal by 90° and to change it
back.
JEITA ED-4701/400
ED-8121
JIS C7021: A11
IEC Pub68-2-21
Shock resis-
tance
Judges the structural resistivity and mechanical resistivity of
products. The conditions of this test vary with the product
structure. Usually, this test is conducted under the following
conditions.
Impact acceleration:14,700 m/s2
Pulse width: 0.5 ms
JEITA ED-4701/400
ED-8121
JIS C7021: A7
IEC Pub68-2-27
A product may be sub-
jected to this test after it
is packed up.
Vibration resis-
tance
Evaluates the vibration resistivity of products while they are
transported or operated. Usually, this test is conducted under
the following conditions.
Frequency: 100 to 2000 Hz/4 min
200 m/s2
JEITA ED-4701/400
ED-8121
JIS C7021: A10
IEC Pub68-2-21
A product may be sub-
jected to this test after it
is packed up.
Natural drop Evaluates the irregular shock resistivity of products while
they are handled, transported, or operated. Usually, this test
is conducted under the following conditions.
Height: 75 cm
No. of times: 3
JEITA EIAJ-8121
JIS C7021: A8
IEC Pub68-2-32
A product may be sub-
jected to this test after it
is packed up.
Evaluates the low- and high-temperature
resistivity of products.
Tstg min.
(30 min)
25°C
(5 min)
Tstg max.
(30 min)
25°C
(5 min)
1 cycle
Evaluates the high-temperature and
high-humidity resistivity of products.
1 c
y
cle
25°C
65°C90% to 95%
−10°C
24 h
10 cycles
216 Product Quality Control and Reliability
Note: The above testing conditions and testing times depend on the features of each product.
Life expectan-
cy test Continuous op-
eration
Evaluates the resistivity of products to a continuous, long-
time electrical stress and temperature stress. Usually, this
test is conducted under the following conditions.
Ta: 2 5 ±5°C
Bias: IFMAX or PCMAX
EIAJ-EDX-8121
EIAJ-SD-121: 201
JIS C7021: B4
A product may be sub-
jected to this test at a
high temperature, low
temperature, or high
temperature and humid-
ity.
High-tempera-
ture storage
Evaluates the resistivity of products to a high-storage tem-
perature for a long time. Usually, this test is conducted under
the following conditions.
Ta: T s t g MAX
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 115
JIS C7021: B10
IEC Pub68-2-2
Low-tempera-
ture storage
Evaluates the resistivity of products to a low-storage temper-
ature for a long time. Usually, this test is conducted under the
following conditions.
Ta: T s t g MIN
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 116
JIS C7021: B12
IEC Pub68-2-1
High-tempera-
ture and high-
humidity stor-
age
Evaluates the resistivity of products to a high-storage tem-
perature and high storage humidity for a long time. Usually,
this test is conducted under the following conditions.
Ta: 6 0 °C
Humidity: 90%
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 117
JIS C7021: B11
IEC Pub68-2-3
High-tempera-
ture reverse
bias
Evaluates the resistivity of products to a continuous electrical
stress and temperature stress.
EIAJ-SD-121: 203
JIS C7021: B8
A product may be sub-
jected to this test at a
low temperature, high
temperature, or high hu-
midity.
Classification Test Detail Conformi ng standard
Product Quality Control and Reliability 217
■Data from Reliability Tests
The following tables show the results of the reliability tests of typical Transmissive Photomicrosensors with an Infrared LED conducted by OMRON.
Providing this data does not imply that OMRON guarantees the specified reliability level.
Typica l Failure Rates (MTTF Data)
EE-SX1041 (Transmissive Phototransistor Output)
Failure Criteria
Note: Except life test.
Test Results
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Item Symbol Measuring
conditions Failure criteria
General test (see note) Life test
Forward voltage VFIF = 30 mA 1.5 V max. 1.8 V max.
Reverse current IRVR = 4 V 10 µA max. 20 µA max.
Dark current IDVCE = 10 V 0lx 200 nA max. 400 nA max.
Light current ILIF = 20 mA
VCE = 10 V
0.5 mA min.
14 mA max.
Initial value × 0.7 min.
Test item Test conditions (see note 1) Number of
samples Component hours
(h) Number of failures Failure rate (1/h)
(see note 2)
Continuous operation Ta = 25°C, IF = 50 mA
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature stor-
age
Ta = 100°C
2000 h
22 pcs 4.4 x 10405.22 x 10–5
Low-temperature stor-
age
Ta = –30°C
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature and
high-humidity storage
Ta = 60°C, 90%
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature re-
verse bias
Ta = 85°C, VCE = 30 V
2000 h
22 pcs 4.4 x 10405.22 x 10–5
Temperature cycle –30°C (30 min) to 100°C (30 min)
10 times
22 pcs --- 0 ---
Shock resistance 14,700 m/s2, 0.5 ms, 3 times
each in ±X, ±Y, and ±Z directions
11 pcs --- 0 ---
Vibration resistance 20 to 2,000 Hz, 1.5 mm or
98 m/s2 each in X, Y, and Z direc-
tions
11 pcs --- 0 ---
218 Product Quality Control and Reliability
EE-SX1235A-P2 (Transmissive Phototransistor Output)
Failure Criteria
Note: Except life test.
Test Results
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Item Symbol Measuring
conditions Fai lure criteria
General test (see note) Life test
Forward voltage VFIF = 30 mA 1.5 V max. 1.8 V max.
Reverse current IRVR = 4 V 10 µA max. 20 µA max.
Dark current IDVCE = 10 V 0lx 200 nA max. 400 nA max.
Light current ILIF = 20 mA
VCE = 5 V
0.5 mA min.
14 mA max.
Initial value × 0.7 min.
Test item Test conditions (see note 1) Number of
samples Component hours
(h) Number of failures Failure rate (1/h)
(see note 2)
Continuous operation Ta = 25°C, IF = 50 mA
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature stor-
age
Ta = 100°C
2000 h
22 pcs 4.4 x 10405.22 x 10–5
Low-temperature stor-
age
Ta = –40°C
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature and
high-humidity storage
Ta = 6 0 °C, 90%
2000 h
22 pcs 4.4 x 10405.22 x 10–5
High-temperature re-
verse bias
Ta = 8 5 °C, VCE = 30 V
2000 h
22 pcs 4.4 x 10405.22 x 10–5
Temperature cycle –40°C (30 min) to 100°C (30 min)
10 times
22 pcs --- 0 ---
Shock resistance 294 m/s2, 0.5 ms, 3 times each in
±X, ±Y, and ±Z directions
11 pcs --- 0 ---
Vibration resistance 5 to 50 Hz, 1.5 mm or 9.8 m/s2
each in X, Y, and Z directions
11 pcs --- 0 ---
Product Quality Control and Reliability 219
EE-SX398 (Transmissive Photo-IC Output)
Failure Criteria
Note: Except life test.
Test Results
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Item Symbol Measuring
conditions Failure criteria
General test (see note) Life test
Forward voltage VFIF = 20 mA 1.5 V max. 1.8 V max.
Reverse current IRVR = 4 V 10 µA max. 20 µA max.
Low-level output
voltage
VOL VCC = 16 V
IOL = 16 mA
IF = 0 mA
0.4 V max. 0.48 V max.
High-level output
current
IOH VCC = 16 V
VOUT = 28 V
IF = 5 mA
100 µA max. 200 µA max.
Current consump-
tion
ICC VCC = 16 V 10 mA max. 12 mA max.
LED current when
output is OFF
IFT VCC = 16 V
IOL = 16 mA
5 mA max. Initial value × 1.3 max.
Test item Test conditions (see note 1) Number of
samples Component hours
(h) Number of failures Failure rate (1/h)
(see note 2)
Continuous operation Ta = 25°C, IF = 20 mA, VCC = 5 V
1500 h
22 pcs 3.3 x 10406.96 x 10–5
High-temperature stor-
age
Ta = 100°C
2000 h
22 pcs 3.3 x 10406.96 x 10–5
Low-temperature stor-
age
Ta = –40°C
2000 h
22 pcs 3.3 x 10406.96 x 10–5
High-temperature and
high-humidity storage
Ta = 60°C, 90%
2000 h
22 pcs 3.3 x 10406.96 x 10–5
High-temperature re-
verse bias
Ta = 85°C, VCE = 30 V
2000 h
22 pcs 3.3 x 10406.96 x 10–5
Temperature cycle –40°C (30 min) to 100°C (30 min)
10 times
22 pcs --- 0 ---
Shock resistance 14,700 m/s2, 0.5 ms, 3 times
each in ±X, ±Y, and ±Z directions
11 pcs --- 0 ---
Vibration resistance 20 to 2,000 Hz, 1.5 mm or
98 m/s2 each in X, Y, and Z direc-
tions
11 pcs --- 0 ---
220 Product Quality Control and Reliability
EE-SX4235A-P2 (Transmissive Photo-IC Output)
Failure Criteria
Note: Except life test.
Test Results
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Item Symbol Measuring
conditions Fai lure criteria
General test (see note) Life test
Current consump-
tion
ICC VCC = 5.5 V 16.5 mA max. 19.8 mA max.
Low-level output
voltage
VOL VCC = 4.5 V
IOUT = 16 mA
with incident
0.35 V max. 0.42 V max.
High-level output
voltage
IOH VCC = 5.5 V
VOUT = VCC
with incident
RL = 47 kΩ
4.95 V max. 3.96 V max.
Test item Test conditions (see note 1) Number of
samples Component hours
(h) Number of failures Failure rate (1/h)
(see note 2)
Continuous operation Ta = 25°C, VCC = 5 V
1000 h
22 pcs 2.2 x 10401.05 x 10–4
High-temperature stor-
age
Ta = 8 5 °C
1000 h
22 pcs 2.2 x 10401.05 x 10–4
Low-temperature stor-
age
Ta = –40°C
1000 h
22 pcs 2.2 x 10401.05 x 10–4
High-temperature and
high-humidity storage
Ta = 6 0 °C, 90%
1000 h
22 pcs 2.2 x 10401.05 x 10–4
Temperature cycle –40°C (30 min) to 85°C (30 min)
10 times
22 pcs --- 0 ---
Shock resistance 294 m/s2, 0.5 ms, 3 times each in
±X, ±Y, and ±Z directions
11 pcs --- 0 ---
Vibration resistance 5 to 50 Hz, 1.5 mm or 9.8 m/s2
each in X, Y, and Z directions
11 pcs --- 0 ---
Product Quality Control and Reliability 221
Light Current (IL) Secular Changes of Phototransistor Output Photomicrosensor
Note: Secular changes in Photomicrosensor light current (with a phototransistor output circuit) and LED current (with a photo IC output circuit)
during output ON/OFF are generally due to reductions in the LED emission intensity.
The emission intensity of a GaAs infrared LED is shown in the graphs below. The information in these graphs applies to most of the GaAs
infrared LEDs manufactured by OMRON. Because reductions in the emission intensity of an ordinary red LED tend to be larger than those
of an infrared LED, the information in these graphs cannot be applied to ordinary red LEDs. For detailed information, consult your OMRON
representative.
Ta = 25°C, IF = 20 mA, n = 22
Ta = 25°C, IF = 50 mA, n = 22
Ta = 85°C, IF = 10 mA, n = 22
IL change rate (%)
Energizing time (h)
Max.
Ave.
Min.
IL change rate (%)
Energizing time (h)
IL change rate (%)
Energizing time (h)
Max.
Ave.
Min.
Max.
Ave.
Min.
222 Product Quality Control and Reliability
Ta = −25°C, IF = 50 mA, n = 22
IL change rate (%)
Ener
g
izin
g
time
(
h
)
Max.
Ave.
Min.
Security Trade Control 223
Security Trad e Control
(As of March 2003 )
■Purpose of the Export Controls
To preserve free trade and global security, it is necessary to prevent the proliferation, development, and production of weapons of mass destructions
such as nuclear weapons, biological/chemical weapons, and missile systems. It is also necessary to prevent the accumulation of large amounts of
conventional weapons or weapons–related materials to prevent regional disputes.
■Contents of the Export Controls
The following chart provides a simple summary of export controls.
The 3 Export Cont rols
■Laws, Ordinances, and Regulations Related to Export Controls
With respect to the Foreign Exchange Laws (Foreign Exchange and Foreign Trade Laws), etc., it is necessary to obtain approval from the Ministry
of Economy, Trade, and Industry when exporting (or providing to a non–resident) any products or technologies* that require approval. If the
product or technology is exported without approval or inappropriately, an individual will be charged with a criminal offense and a business will be
subject to public penalties as outlined below.
Note: The Export Regulations (Export Exchange Regulations), Foreign Exchange Regulations, and related laws and ordinances specify which
products and technologies require approval for export.
Laws, Or dinances , and Regulations
■Catch-all Controls
Catch-all controls is the general terms used for export controls that apply to the export of all products and technologies when 1) it is know that
they will be used for the development or manufacture of weapons of mass destruction or 2) the government has informed an individual or
business of such use. Catch-all controls are replacing the previous list controls.
Catch-all controls were implemented in Japan on April 1, 2002. Refer to the following websites for further information.
•Ministry of Economy, Trade, and Industry: http://www.meti.go.jp/policy/anpo/index.html
•CISTEC (Center for Information on Security Trade Control): http://www.cistec.or.jp
Conventional weapons and related
materials (including advanced materi-
als, electronics, computers, and com-
munications equipment)
All regions
Type of Control Controlled Products/Technologies
(List)
Countries Controlled
Non-proliferation
Control
Wassener
Arrangement
Catch-all Controls
Weapons of mass destruction or
manufacturing equipment
(including missiles and nuclear, bio-
logical, and chemical weapons)
General-purpose products related to
weapons of mass destruction
(in principle, all items)
All regions
Strict controls are enforced on
exports to the 4 special-case
countries (Iran, Iraq, Libya, and
North Korea).
All regions
(Except those in Attached
Table 4-2 (26 countries))
Development of nuclear weapons
If law or regulation
is violated:
Foreign Exchange Law:
Approval is required from the Office of the Ministry
of Economy, Trade, and Industry to export regulated
products and technologies.
Export Regulations:
Attached Table 1 (regulated product list), Table 2 (list of
treaty-regulated products), and Table 2-2 (UN regulated
states)
Foreign Exchange Regulations:
Attached table (prescription of regulated technologies)
Criminal Violation:
Up to 5 years imprisonment and ¥2,000,000 fine
Administrative Violation:
Up to 3 years suspension of export rights
Public Penalties:
Damaged corporate reputation through bad press reports
224 Security Trade Control
■Compliance with the Regulations
As a corporate citizen of Japan and the global community, OMRON has established a Compliance Program to assure compliance with the
regulations outlined above in order to help maintain free trade and global security. We have also planned a training course on export controls.
OMRON determines whether each of its products is subject to export controls and carefully controls transactions so that OMRON products are
not exported inappropriately.
■Request to Customers
When exporting goods that require export approval, always obtain approval from an Official of the Ministry of Economy, Trade, and Industry. When
dealing with products that are subject to export controls, take precautions to prevent incorrect exportation even when the products are resold.
When exporting a controlled product, check the final application and end user to verify that the product will not be used in a weapon–related
application such as a weapon itself or weapons research.
Furthermore, always verify that the OMRON product will not be used in any case in a nuclear weapon, missile, chemical weapon, other weapon,
or equipment used to manufacture these weapons.
The limitations described above will be submitted to OMRON or an OMRON sales representative as an approval form or contract, so please fully
understand and comply with these procedures.
If you have any questions, please contact your OMRON representative for further details. These security procedures are based on domestic
Japanese laws and apply to exports from Japan.
READ AND UNDERSTAND THIS DOCUMENT 225
READ AND UNDERSTAND THIS DOCUMENT
Please read and understand this document before using the products. Please consult your OMRON representative if you have
any questions or comments.
WARRANTY
OMRON’s exclusi ve wa rrant y is that the pro duc ts are free from defec t s in mate rial s and wo rkman shi p for a peri od of one year (or
other period if specified) from date of sale by OMRON.
OMRON MAKES NO WARRANTY OR REPRESENTATION, EXPRESS OR IMPLIED, REGARDING NON-INFRINGEMENT,
MERCHANTABILITY, OR FITNESS FOR PARTICULAR PURPOSE OF THE PRODUCTS. ANY BUYER OR USER
ACKNOWLEDGES THAT THE BUYER OR USER ALONE HAS DETERMINED THAT THE PRODUCTS WILL SUITABLY MEET
THE REQUIREMENTS OF THEIR INTENDED USE. OMRON DISCLAIMS ALL OTHER WARRANTIES, EXPRESS OR
IMPLIED.
LIMITATIONS OF LIABILITY
OMRON SHALL NOT BE RESPONSIBLE FOR SPECIAL, INDIRECT, OR CO NSEQUENTIAL DAMAGES, LOSS OF PROFITS
OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED ON
CONTRACT, WARRANTY, NEGLIGENCE, OR STRICT LIABILITY.
In no event shall responsibility of OMRON for any act exceed the individual price of the product on which liability is asserted.
IN NO EVENT SHALL OMRON BE RESPONSIBLE FOR WARRANTY, REPAIR, OR OTHER CLAIMS REGARDING THE
PRODUCTS UNLESS OMRON’S ANALYSIS CONFIRMS THAT THE PRODUCTS WERE PROPERLY HANDLED, STORED,
INSTALLED, AND MAINTAINED AND NOT SUBJECT TO CONTAMINATION, ABUSE, MISUSE, OR INAPPROPRIATE
MODIFICATION OR REPAIR.
SUITABILITY FOR USE
THE PRODUCTS CONTAINED IN THIS DOCUMENT ARE NOT SAFETY RATED. THEY ARE NOT DESIGNED OR RATED
FOR ENSURING SAFETY OF PERSONS, AND SHOULD NOT BE RELIED UPON AS A SAFETY COMPONENT OR
PROTECTIVE DEVICE FOR SUCH PURPOSES. Please refer to separate catalogs for OMRON's safety rated products.
OMRON shall not be responsible for conformity with any standards, codes, or regulations that apply to the combination of
products in the customer’s application or us e of the product.
At the customer’s request, OMRON will provide applicable third party certification documents identifying ratings and limitations of
use that apply to the products. This information by itself is not sufficient for a complete determination of the suitability of the
products in combination with the end product, machine, system, or other application or use.
The following are some examples of applications for which particular attention must be given. This is not intended to be an
exhaus tiv e lis t of all poss ible uses of the produc t s, nor is it in tend ed to impl y tha t the us es list ed ma y be s uitable for the products:
• Outdoor use, uses involving potential chemical contamination or electrical interference, or conditions or uses not described in
this document.
• Nuclear energy control systems, combustion systems, railroad systems, aviation systems, medical equipment, amusement
machines, vehicles, safety equipment, and installations subject to separate industry or government regulations.
• Systems, machines, and equipment that could present a risk to life or property.
Please know and observe all prohibitions of use applicable to the products.
NEVER USE THE PRODUCTS FOR AN APPLICATION INVOLVING SERIOUS RISK TO LIFE OR PROPERTY WITHOUT
ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO ADDRESS THE RISKS, AND THAT THE OMRON
PRODUCT IS PROPERLY RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE OVERALL EQUIPMENT OR
SYSTEM.
226 READ AND UNDERSTAND THIS DOCUMENT
PERFORMANCE DATA
Performance data given in this document is provided as a guide for the user in determining suitability and does not constitute a
warranty. It may represent the result of OMRON’s test conditions, and the users must correlate it to actual application
requirements. Actual performance is subject to the OMRON Warranty and Limitations of Liability.
CHANGE IN SPECIFICATIONS
Product specifications and accessories may be changed at any time based on improvements and other reasons.
It is our practice to change model numbers when published ratings or features are changed, or when significant construction
changes are made. However, some specifications of the product may be changed without any notice. When in doubt, special
model numbers may be assigned to fix or establish key specifications for your application on your request. Please consult with
your OMRON representative at any time to confirm actual specifications of purchased products.
DIMENSIONS AND WEIGHTS
Dimensions and weights are nominal and are not to be used for manufacturing purposes, even when tolerances are shown.
ERRORS AND OMISSIONS
The information in this document has been carefully checked and is believed to be accurate; however, no responsibility is
assumed for clerical, typographical, or proofreading errors, or omissions.
PROGRAMMABLE PRODUCTS
OMRON shall not be responsible for the user’s programming of a programmable product, or any consequence thereof.
COPYRIGHT AND COPY PERMISSION
This document shall not be copied for sales or promotions without permission.
This document is protected by copyright and is intended solely for use in conjunction with the product. Please notify us before
copying or reproducing this document in any manner, for any other purpose. If copying or transmitting this document to another,
please copy or transmit it in its entirety.
Terms and Conditions of Sale
1. Offer; Acceptance. These terms and conditions (these "Terms") are deemed
part of all quotes, agreements, purchase orders, acknowledgments, price lists,
catalogs, manuals, brochures and other documents, whether electronic or in
writing, relating to the sale of products or services (collectively, the "Products")
by Omron Electronics LLC and its subsidiary companies (“Omron”). Omron
objects to any terms or conditions proposed in Buyer’s purchase order or other
documents which are inconsistent with, or in addition to, these Terms.
2. Prices; Payment Terms. All prices stated are current, subject to change with-
out notice by Omron. Omron reserves the right to increase or decrease prices
on any unshipped portions of outstanding orders. Payments for Products are
due net 30 days unless otherwise stated in the invoice.
3. Discounts. Cash discounts, if any, will apply only on the net amount of invoices
sent to Buyer after deducting transportation charges, taxes and duties, and will
be allowed only if (i) the invoice is paid according to Omron’s payment terms
and (ii) Buyer has no past due amounts.
4. Interest. Omron, at its option, may charge Buyer 1-1/2% interest per month or
the maximum legal rate, whichever is less, on any balance not paid within the
stated terms.
5. Orders. Omron will accept no order less than $200 net billing.
6. Governmental Approvals. Buyer shall be responsible for, and shall bear all
costs involved in, obtaining any government approvals required for the impor-
tation or sale of the Products.
7. Taxes. All taxes, duties and other governmental charges (other than general
real property and income taxes), including any interest or penalties thereon,
imposed directly or indirectly on Omron or required to be collected directly or
indirectly by Omron for the manufacture, production, sale, delivery, importa-
tion, consumption or use of the Products sold hereunder (including customs
duties and sales, excise, use, turnover and license taxes) shall be charged to
and remitted by Buyer to Omron.
8. Financial. If the financial position of Buyer at any time becomes unsatisfactory
to Omron, Omron reserves the right to stop shipments or require satisfactory
security or payment in advance. If Buyer fails to make payment or otherwise
comply with these Terms or any related agreement, Omron may (without liabil-
ity and in addition to other remedies) cancel any unshipped portion of Prod-
ucts sold hereunder and stop any Products in transit until Buyer pays all
amounts, including amounts payable hereunder, whether or not then due,
which are owing to it by Buyer. Buyer shall in any event remain liable for all
unpaid accounts.
9. Cancellation; Etc. Orders are not subject to rescheduling or cancellation
unless Buyer indemnifies Omron against all related costs or expenses.
10. Force Majeure. Omron shall not be liable for any delay or failure in delivery
resulting from causes beyond its control, including earthquakes, fires, floods,
strikes or other labor disputes, shortage of labor or materials, accidents to
machinery, acts of sabotage, riots, delay in or lack of transportation or the
requirements of any government authority.
11. Shipping; Delivery. Unless otherwise expressly agreed in writing by Omron:
a. Shipments shall be by a carrier selected by Omron; Omron will not drop ship
except in “break down” situations.
b. Such carrier shall act as the agent of Buyer and delivery to such carrier shall
constitute delivery to Buyer;
c. All sales and shipments of Products shall be FOB shipping point (unless oth-
erwise stated in writing by Omron), at which point title and risk of loss shall
pass from Omron to Buyer; provided that Omron shall retain a security inter-
est in the Products until the full purchase price is paid;
d. Delivery and shipping dates are estimates only; and
e. Omron will package Products as it deems proper for protection against nor-
mal handling and extra charges apply to special conditions.
12. Claims. Any claim by Buyer against Omron for shortage or damage to the
Products occurring before delivery to the carrier must be presented in writing
to Omron within 30 days of receipt of shipment and include the original trans-
portation bill signed by the carrier noting that the carrier received the Products
from Omron in the condition claimed.
13. Warranties. (a) Exclusive Warranty. Omron’s exclusive warranty is that the
Products will be free from defects in materials and workmanship for a period of
twelve months from the date of sale by Omron (or such other period expressed
in writing by Omron). Omron disclaims all other warranties, express or implied.
(b) Limitations. OMRON MAKES NO WARRANTY OR REPRESENTATION,
EXPRESS OR IMPLIED, ABOUT NON-INFRINGEMENT, MERCHANTABIL-
ITY OR FITNESS FOR A PARTICULAR PURPOSE OF THE PRODUCTS.
BUYER ACKNOWLEDGES THAT IT ALONE HAS DETERMINED THAT THE
PRODUCTS WILL SUITABLY MEET THE REQUIREMENTS OF THEIR
INTENDED USE. Omron further disclaims all warranties and responsibility of
any type for claims or expenses based on infringement by the Products or oth-
erwise of any intellectual property right. (c) Buyer Remedy. Omron’s sole obli-
gation hereunder shall be, at Omron’s election, to (i) replace (in the form
originally shipped with Buyer responsible for labor charges for removal or
replacement thereof) the non-complying Product, (ii) repair the non-complying
Product, or (iii) repay or credit Buyer an amount equal to the purchase price of
the non-complying Product; provided that in no event shall Omron be responsi-
ble for warranty, repair, indemnity or any other claims or expenses regarding
the Products unless Omron’s analysis confirms that the Products were prop-
erly handled, stored, installed and maintained and not subject to contamina-
tion, abuse, misuse or inappropriate modification. Return of any Products by
Buyer must be approved in writing by Omron before shipment. Omron Compa-
nies shall not be liable for the suitability or unsuitability or the results from the
use of Products in combination with any electrical or electronic components,
circuits, system assemblies or any other materials or substances or environ-
ments. Any advice, recommendations or information given orally or in writing,
are not to be construed as an amendment or addition to the above warranty.
See http://oeweb.omron.com or contact your Omron representative for pub-
lished information.
14. Limitation on Liability; Etc. OMRON COMPANIES SHALL NOT BE LIABLE
FOR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES,
LOSS OF PROFITS OR PRODUCTION OR COMMERCIAL LOSS IN ANY
WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS
BASED IN CONTRACT, WARRANTY, NEGLIGENCE OR STRICT LIABILITY.
Further, in no event shall liability of Omron Companies exceed the individual
price of the Product on which liability is asserted.
15. Indemnities. Buyer shall indemnify and hold harmless Omron Companies and
their employees from and against all liabilities, losses, claims, costs and
expenses (including attorney's fees and expenses) related to any claim, inves-
tigation, litigation or proceeding (whether or not Omron is a party) which arises
or is alleged to arise from Buyer's acts or omissions under these Terms or in
any way with respect to the Products. Without limiting the foregoing, Buyer (at
its own expense) shall indemnify and hold harmless Omron and defend or set-
tle any action brought against such Companies to the extent based on a claim
that any Product made to Buyer specifications infringed intellectual property
rights of another party.
16. Property; Confidentiality. Any intellectual property in the Products is the exclu-
sive property of Omron Companies and Buyer shall not attempt to duplicate it
in any way without the written permission of Omron. Notwithstanding any
charges to Buyer for engineering or tooling, all engineering and tooling shall
remain the exclusive property of Omron. All information and materials supplied
by Omron to Buyer relating to the Products are confidential and proprietary,
and Buyer shall limit distribution thereof to its trusted employees and strictly
prevent disclosure to any third party.
17. Export Controls. Buyer shall comply with all applicable laws, regulations and
licenses regarding (i) export of products or information; (iii) sale of products to
“forbidden” or other proscribed persons; and (ii) disclosure to non-citizens of
regulated technology or information.
18. Miscellaneous. (a) Waiver. No failure or delay by Omron in exercising any right
and no course of dealing between Buyer and Omron shall operate as a waiver
of rights by Omron. (b) Assignment. Buyer may not assign its rights hereunder
without Omron's written consent. (c) Law. These Terms are governed by the
law of the jurisdiction of the home office of the Omron company from which
Buyer is purchasing the Products (without regard to conflict of law princi-
ples). (d) Amendment. These Terms constitute the entire agreement between
Buyer and Omron relating to the Products, and no provision may be changed
or waived unless in writing signed by the parties. (e) Severability
. If any provi-
sion hereof is rendered ineffective or invalid, such provision shall not invalidate
any other provision. (f) Setoff. Buyer shall have no right to set off any amounts
against the amount owing in respect of this invoice. (g) Definitions. As used
herein, “including” means “including without limitation”; and “Omron Compa-
nies” (or similar words) mean Omron Corporation and any direct or indirect
subsidiary or affiliate thereof.
Certain Precautions on Specifications and Use
1. Suitability of Use. Omron Companies shall not be responsible for conformity
with any standards, codes or regulations which apply to the combination of the
Product in the Buyer’s application or use of the Product. At Buyer’s request,
Omron will provide applicable third party certification documents identifying
ratings and limitations of use which apply to the Product. This information by
itself is not sufficient for a complete determination of the suitability of the Prod-
uct in combination with the end product, machine, system, or other application
or use. Buyer shall be solely responsible for determining appropriateness of
the particular Product with respect to Buyer’s application, product or system.
Buyer shall take application responsibility in all cases but the following is a
non-exhaustive list of applications for which particular attention must be given:
(i) Outdoor use, uses involving potential chemical contamination or electrical
interference, or conditions or uses not described in this document.
(ii) Use in consumer products or any use in significant quantities.
(iii) Energy control systems, combustion systems, railroad systems, aviation
systems, medical equipment, amusement machines, vehicles, safety equip-
ment, and installations subject to separate industry or government regulations.
(iv) Systems, machines and equipment that could present a risk to life or prop-
erty. Please know and observe all prohibitions of use applicable to this Prod-
uct.
NEVER USE THE PRODUCT FOR AN APPLICATION INVOLVING SERIOUS
RISK TO LIFE OR PROPERTY OR IN LARGE QUANTITIES WITHOUT
ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO
ADDRESS THE RISKS, AND THAT THE OMRON’S PRODUCT IS PROP-
ERLY RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE
OVERALL EQUIPMENT OR SYSTEM.
2. Programmable Products. Omron Companies shall not be responsible for the
user’s programming of a programmable Product, or any consequence thereof.
3. Performance Data. Data presented in Omron Company websites, catalogs
and other materials is provided as a guide for the user in determining suitabil-
ity and does not constitute a warranty. It may represent the result of Omron’s
test conditions, and the user must correlate it to actual application require-
ments. Actual performance is subject to the Omron’s Warranty and Limitations
of Liability.
4. Change in Specifications. Product specifications and accessories may be
changed at any time based on improvements and other reasons. It is our prac-
tice to change part numbers when published ratings or features are changed,
or when significant construction changes are made. However, some specifica-
tions of the Product may be changed without any notice. When in doubt, spe-
cial part numbers may be assigned to fix or establish key specifications for
your application. Please consult with your Omron’s representative at any time
to confirm actual specifications of purchased Product.
5. Errors and Omissions. Information presented by Omron Companies has been
checked and is believed to be accurate; however, no responsibility is assumed
for clerical, typographical or proofreading errors or omissions.
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