MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE
MICROWAVE MICROWAVE
MICROWAVE SEMICONDUCTOR
SEMICONDUCTOR SEMICONDUCTOR
SEMICONDUCTOR
TIM5964-35SLA-251
TIM5964-35SLA-251TIM5964-35SLA-251
TIM5964-35SLA-251
TECHNICAL DATA
TECHNICAL DATATECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURESFEATURES
FEATURES
LOW INTERMODULATION DISTORTION
HIGH EFFICI ENCY
IM3=-45 dBc at Po= 35.0dBm, ηadd= 39% at 5.9 to 6.75GHz
Single Carrier Level
HIGH G AIN
HIGH POWER G1dB=8.5dB at 5.9GHz to 6.75GHz
P1dB=45.5dBm at 5.9GHz to 6.75GHz
BROAD B AND INTERNALLY MATCHED
HERMETICAL LY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°
°°
°C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point P1dB dBm 45.0 45.5
Power Gain at 1dB
Compression Point G1dB dB 8.0 9.0
Drain Curr ent IDS1 A8.0 9.0
Gain Flatness ∆GdB±0.8
Power Added Efficiency ηadd
VDS= 10V
f = 5.9 – 6.75GHz
%39
3rd Order Intermodulation
Distortion IM3dBc -42 -45
Drain Curr ent IDS2
Two Tone Test
Po=35.0dBm
(Single Carrier Level) A8.0 9.0
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C100
Recommended gate resistance(Rg) : Rg=Rg1(10 Ω
ΩΩ
Ω)+
++
+Rg2(18 Ω
ΩΩ
Ω)= 28 Ω
ΩΩ
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°
°°
°C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 10.5A mS 6500
Pinch-off Voltage VGSoff VDS= 3V
IDS= 140mA V -1.0 -2.5 -4.0
Saturated Drain Curr ent IDSS VDS= 3V
VGS= 0V A20 26
Gate-Source Breakdown
Voltage VGSO IGS= -420µAV-5
Thermal Resistance Rth(c-c) Channel to Case °C/W 1.0 1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by impli cation or other wi se un der any patent or patent rights of TOSHIBA or ot he rs.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceedi n g wit h design of equipment incorpo rating this product.
Revised Aug. 2000
2
TIM5964-35SLA-251
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°
°°
°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V15
Gate-Source Voltage VGS V-5
Drain Curr ent IDS A26
Total Power Dissipation (Tc= 25 °C) PTW 115
Channel Temperature Tch °C 175
Storage Tstg °C -65 ∼ +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
c
cc
c Gate
d
dd
d Source
e
ee
e Drain
HANDLIN G PRECAUTIONS FOR PACKAGED TYPE
HANDLIN G PRECAUTIONS FOR PACKAGED TYPEHANDLIN G PRECAUTIONS FOR PACKAGED TYPE
HANDLIN G PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°
°°
°C.
5.5 MAX.
0.2 MAX.
0.7±
±±
±0.15
2.4±
±±
±0.3
8.0±
±±
±0.2
1.4±
±±
±0.3 0.1 +0.1
-0.05
2.5 MIN.
2.5 MIN. 17.4±
±±
±0.4
2.6±
±±
±0.3
20.4±
±±
±0.3
24.5 MAX.
4 –
––
– C1.0
c
cc
c
d
dd
dd
dd
d
e
ee
e
16.4 MAX.
3
TIM5964-35SLA-251
RF PERFORMANCES
43
4343
43
44
4444
44
45
4545
45
46
4646
46
47
4747
47
48
4848
48
5.75
5.755.75
5.75 6.00
6.006.00
6.00 6.25
6.256.25
6.25 6.50
6.506.50
6.50 6.75
6.756.75
6.75
Output Power vs. Frequency
Frequency (GHz)
VDS= 10 V
IDS≅
≅≅
≅ 8 A
Pin= 36.5 dBm
Po
(
dBm
)
39
3939
39
40
4040
40
41
4141
41
42
4242
42
43
4343
43
44
4444
44
45
4545
45
46
4646
46
47
4747
47
48
4848
48
29
2929
29 31
3131
31 33
3333
33 35
3535
35 37
3737
37 39
3939
39 10
1010
10
20
2020
20
30
3030
30
40
4040
40
50
5050
50
60
6060
60
70
7070
70
80
8080
80
90
9090
90
100
100100
100
f=6.75 GHz
VDS= 10 V
IDS≅
≅≅
≅ 8 A
Output Power vs. Input Power
Pin(dBm)
Po(dBm)
η
ηη
ηadd(%)
Po
η
ηη
η
add
4
TIM5964-35SLA-251
0
00
0
20
2020
20
40
4040
40
60
6060
60
80
8080
80
100
100100
100
120
120120
120
0
00
040
4040
40 80
8080
80 120
120120
120 160
160160
160 200
200200
200
POWER DISSIPATION vs. CASE TEMPERATURE
Tc(°
°°
°C)
PT(W)
-60
-60-60
-60
-50
-50-50
-50
-40
-40-40
-40
-30
-30-30
-30
-20
-20-20
-20
-10
-10-10
-10
30
3030
30 32
3232
32 34
3434
34 36
3636
36 38
3838
38 40
4040
40
VDS= 10 V
IDS≅
≅≅
≅ 8 A
f= 6.325GHz
∆
∆∆
∆f= 5MHz
IM3 vs. OUTPUT POWER CHARACTERISTICS
Po(dB m ) , Single Carrier Level
IM3(dBc)