SD101AW / 101BW / 101CW
Document Number 85679
Rev. 1.4, 16-Dec-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Schottky Diodes
Features
• For general purpose applications
• The low forward voltage drop and fast
switching make it ideal for protection of
MOS devices, steering, biasing and cou-
pling diodes for fast switching and low logic level
applications.
• The SD101 series is a Metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• These diodes are also available in the Mini-MELF
case with type designations LL101A to LL101C, in
the DO-35 case with type designations SD101A
through SD101C and in the SOD-323 case with
type designations SD101AWS through
SD101CWS.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Ordering code Type Marking Remarks
SD101AW SD101AW-GS18 or SD101AW-GS08 SA Tape and Reel
SD101BW SD101BW-GS18 or SD101BW-GS08 SB Tape and Reel
SD101CW SD101CW-GS18 or SD101CW-GS08 SC Tape and Reel
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage SD101AW VRRM 60 V
SD101BW VRRM 50 V
SD101CW VRRM 40 V
Power dissipation (Infinite
heatsink)
Ptot 4001) mW
Forward current IF30 mA
Maximum single cycle surge 10 μs square wave IFSM 2A
e3
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Document Number 85679
Rev. 1.4, 16-Dec-05
SD101AW / 101BW / 101CW
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 3001) K/W
Junction temperature Tj1251) °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 μA SD101AW V(BR)R 60 V
SD101BW V(BR)R 50 V
SD101CW V(BR)R 40 V
Leakage current VR = 50 V SD101AW IR200 nA
VR = 40 V SD101BW IR200 nA
VR = 30 V SD101CW IR200 nA
Forward voltage drop IF = 1 mA SD101AW VF0.41 V
SD101BW VF0.40 V
SD101CW VF0.39 V
IF = 15 mA SD101AW VF1.0 V
SD101BW VF0.95 V
SD101CW VF0.90 V
Diode capacitance VR = 0 V, f = 1 MHz SD101AW Ctot 2.0 pF
SD101BW Ctot 2.1 pF
SD101CW Ctot 2.2 pF
Reverse recovery time IF = IR = 5 mA,
recover to 0.1 IR
trr 1
SD101AW / 101BW / 101CW
Document Number 85679
Rev. 1.4, 16-Dec-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
Figure 2. Typical Forward Conduction Curve
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
0.01
0.1
1
10
0 0.4 0.6 0.8 1.00.2
A
B
C
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18477
A
B
C
0 0.4 0.6 0.8 1.00.2
60
20
80
40
0
100
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18478
100
10
1
0.1
0.01 10 20 30 40050
75 °C
50 °C
25 °C
150 °C
125 °C
100 °C
V
R
- Reverse Voltage(V)
I - Reverse Current ( μA)
R
18479
Figure 4. Typical Capacitance Curve as a Function of Reverse
Voltage
18480
10 20 30 400
0
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0.2
0.4
50
T
j
=25
°C
CBA
C - Typical Capacitance ( pF )
T
V
R
- Reverse Voltage(V)
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Document Number 85679
Rev. 1.4, 16-Dec-05
SD101AW / 101BW / 101CW
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode Band
17432
0.55 (0.022)
1.70 (0.067)
1.40 (0.055)
3.85 (0.152)
3.55 (0.140)
2.85 (0.112)
2.55 (0.100)
0.1 (0.004) max.
1.35 (0.053) max.
0.25 (0.010) min. 0.15 (0.006) max.
2.40 (0.094)
1.40 (0.055)
ISO Method E
Mounting Pad Layout
0.72 (0.028)
SD101AW / 101BW / 101CW
Document Number 85679
Rev. 1.4, 16-Dec-05
Vishay Semiconductors
www.vishay.com
5
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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