TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP42/TIP42A/TIP42B/TIP42C Rev. B0 1
December 2009
TIP42/TIP42A/TIP42B/TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41/TIP41A/TIP41B/TIP41C
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 6 A
ICP Collector Current (Pulse) -10 A
IB Base Current -2 A
PC Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (TA=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP42/TIP42A/TIP42B/TIP42C Rev. B0 2
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
IC = -30m A, IB = 0 -40
-60
-80
-100
V
V
V
V
ICEO Collector Cut-off Current
: TIP42/42A
: TIP42B/42C VCE = -30V, IB = 0
VCE = -60V, IB = 0 -0.7
-0.7 mA
mA
ICES Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-400
-400
-400
-400
μA
μA
μA
μA
IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1 mA
hFE * DC Current Gain VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A 30
15
75
VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -6A -2.0 V
fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA,
f = 1MHz 3.0 MHz
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP42/TIP42A/TIP42B/TIP42C Rev. B0 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-100
TIP42C
TIP42B
TIP42A
TIP42
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLEC TOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP42/TIP42A/TIP42B/TIP42C Rev. B0 4
Mechanical Dimensions
TO-220
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I41
