IRF330,331 D86DQ2,Q1 5.5 AMPERES POWER: MOS [FET FIELD EFFECT POWER TRANSISTOR 400, 350 VOLTS RpSs(ON) = 1.00 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. oma CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) MAX r- .358(9.09} MAX kk DIA. |_| 7 J SEATING PLANE 0.043(1.09 DIA. 0.038(0.97) Features .426(10.82) MIN. Polysilicon gate Improved stability and reliability 1.050(26.68) e No secondary breakdown Excellent ruggedness MAX #1 0.675(17.15) 0.650(16.51) e Ultra-fast switching Independent of temperature 1 Voitage controlled High transconductance CAST TEMP. Hes . . . . POINT Low input capacitance Reduced drive requirement zoo J Z| e Excellent thermal stability Ease of paralleling DRAIN | 9.225(5.72) DRAIN 0,162(4.09) DIA. io 205(5.21) (CASE) 2HOLES 0.440(11.18: 0.420( 10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF330/D86DQ2 IRF331/D86DQ1 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Res = 1MO VDGR 400 350 Volts Continuous Drain Current @ Tc = 25C Ip 5.5 5.5 A @ Tc = 100C 3.5 3.5 A Pulsed Drain Current" lpm 22 22 A Gate-Source Voitage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 75 75 Watis Derate Above 25C 0.6 0.6 W/G Operating a and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 149 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF330/D86DQ2 BVpss 400 _ _ Volts (Ves = OV, Ip = 250 uA) IRF331/D86DQ1 350 _ Zero Gate Voltage Drain Current loss (Vos = Max Rating, Vag = OV, To = 26C) _ _ 250 HA (Vps = Max Rating, x 0.8, Veg = OV, To = 125C) _- _ 1000 Ca So aoe Current lass _ _ +100 nA on characteristics* . Gate Threshold Voltage To = 25C | Vasc(tH) 2.0 40 Volts (Vps = Vas, |p = 250 uA) On-State Drain Current | 5.5 _ _ A (Vag = 10V, Vps = 10V) D(ON) " Static Drain-Source On-State Resistance (Vag = 10V, Ip = 3A) Rps(ON) _ 0.8 1.0 Ohms Forward Transconductance (Vps = 10V, Ip = 3A) Ofs 2.1 2.5 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 650 800 pF Output Capacitance Vps = 25V Coss _ 100 300 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 15 80 pF switching characteristics Turn-on Delay Time Vos = 175V ta(on) _ 15 _ ns Rise Time Ip = 3A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time Ragen = 500, Res = 12.59 | _ tavoft) _ 30 - ns Fall Time (Res (EQuiv.) = 100) tt _ 20 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 5.5 A Pulsed Source Current Ism _ - 22 A Diode Forward Voltage _ (To = 25C, Vag = OV, Is = 5.5A) Vsp 10 16 Volts Reverse Recovery Time trr _ 360 _ ns (Ig = .5A, dig/dt = 100A/us, To = 125C) QrRR _ 4.0 _ uC *Pulse Test: Pulse width < 300 ws, duty cycle = 2% 100 80 60 40 CONDITIONS: Rosion) CONDITIONS: Ip = 3.0.4, Vgg = 10V 20 CONDITIONS: Ip = 280nA, Vg = Vgg has nN ITED BY R Ip. DRAIN CURRENT (AMPERES) Rosion) AND Vegcry NORMALIZED go 99> bh ADO PULSE To 25C 0.1 t 2 4 6 810 2 40 6080100 200 400 600 1000 40 0 40 80 120 160 Vos DRAIN~SOURCE VOLTAGE (VOLTS) T,, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Roygion; AND VasirH) VS. TEMP. 150