FDS5670 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D SO-8 S S S G Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 6 3 7 2 8 1 Ratings Units 60 V 20 10 V A 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg 4 TA = 25C unless otherwise noted Parameter VDSS 5 Operating and Storage Junction Temperature Range W 1 -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS5670 FDS5670 13'' 12mm 2500 units (c)1999 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDS5670/D Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 A nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 60 V 58 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25C 6.8 Static Drain-Source On-Resistance 0.012 0.019 0.014 ID(on) On-State Drain Current VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TJ=125C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 10 A 2 2.4 4 V mV/C 0.014 0.027 0.017 25 A 39 S 2900 pF Dynamic Characteristics VDS = 15 V, VGS = 0 V f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 685 pF 180 pF (Note 2) VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 16 29 ns 10 20 ns Turn-Off Delay Time 50 80 ns Turn-Off Fall Time 23 42 ns 49 70 nC VDS = 20 V, ID = 10 A VGS = 10 V, 9 nC 10.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 50 C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105 C/W when mounted on a 0.02 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2 c) 125 C/W when mounted on a minimum pad. FDS5670 Electrical Characteristics FDS5670 Typical Characteristics 2 60 50 6V 5V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 40 4V 30 20 10 3.5V 0 1.8 VGS = 4.0V 1.6 4.5V 1.4 5.0V 1.2 6.0V 10V 0.8 0 1 2 3 4 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 2 ID = 10A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.6 1.4 1.2 1 0.8 0.6 ID = 10A 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 0.4 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 o 25 C IS, REVERSE DRAIN CURRENT (A) o TA = -55 C VDS =5V 50 ID, DRAIN CURRENT (A) 7.0V 1 o 125 C 40 30 20 10 VGS=0 10 1 TJ=125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 1 2 3 4 0 5 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 10 5000 VDS = 10V ID = 10A f = 1MHz VGS = 0 V 20V 8 4000 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS5670 Typical Characteristics 6 4 2 CISS 3000 2000 1000 0 COSS CRSS 0 0 10 20 30 40 50 0 10 Qg, GATE CHARGE (nC) 20 Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 100 50 RDS(ON) LIMIT 100s SINGLE PULSE RJA =125C/W TA = 25C 1ms 40 10ms 10 100ms POWER (W) 1s 10s 1 DC VGS = 10V SINGLE PULSE o RJA = 125 C/W 0.1 0.01 0.1 30 20 10 o TA = 25 C 1 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TR ANSI ENT TH ER MAL RESISTANC E ID, DRAIN CURRENT (A) 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 10 SINGLE PULSE TIME (SEC) 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R J A (t) = r(t) * R J A R J A= 125C /W 0.2 0.1 0 .0 5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RJA ( )t 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 300 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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