ECG001FTR-G - TriQuint Semiconductor

ECG001F-G

InGaP HBT Gai n Block

Product Fe a t ures

• DC – 6 GHz

• 22 dB Gain at 1 GHz

• +12.5 dBm P1dB at1 GHz

• +25 dBm OIP3 at 1 GHz

• 3.4 dB Noise Figure

• Internally Matched to 50 Ω

• Lead-free / green / RoHS-Compliant SOT-363 Package

Gener a l Des cr iption

The ECG001F-G is a general-purpose buffer amplifier

that offers high dynamic ra

nge in a low-cost surface

-

mount package. At 1000

MHz, the ECG001F-G

typically

provides 22

dB of gain, +25

dBm Output IP3, and

+12.5

dBm P1dB.

The

ECG001F-G consists of a Darlington-

pair amplifier

using t

he high reliability InGaP /

GaAs HBT process

techn

ology and only requires DC-

blocking capacitors, a

bias resistor, and an inductive RF choke for operation.

The device is ideal for wireless applications and is

available in a low

-cost, surface-mountable lead

-

free

/ green / RoHS-compliant SOT-363 package.

All

devices are 100% RF and DC tested.

Th

is

broadband MMIC amplifier can be directly applied

to various current and next generation wireless

technologies

. In addition, the ECG001F-G will

satisfy

general amplification requirements in

the DC to 6

GHz

freque

ncy range such as CA TV and mobile wireless.

Applications

• Wireless Infrastructure

• CATV / SATV / MoCA

• Point to Point

• Defense & Aerospace

• Test & Measurement Equipment

• General Purpose Wireless

Ordering Information

Part No.

Description

ECG001F-G InGaP / GaAs HBT Gain Block

Standard T/R size = 3000 pieces on a 7” reel

ECG001F-G

6 Pin SOT-363 Package

Functional Block Diagram

Pin Configuration

Pin No.

Label

3

RF IN

6

RF OUT

1, 2, 4, 5

GND

Datasheet: Rev. A 12-05-14 - 1 of 6 - Di sclaimer: Subject to change wi thout notice

ECG001F-G

InGaP HBT Gai n Block

Recommended Operati ng Conditions

Parameter

Min

Typ

Max

Units

T

CASE

−40

+85

°C

Tj for >10

6

hours MTTF

+160

°C

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all

recommended operating conditions.

Absolute Maximum Ratings

Parameter

Rating

Storage Temperature

−55 to 150 °C

RF Input Power, CW, 50Ω, T=25 °C

+12 dBm

Device Current (I

CC

)

150 mA

Operation of this device outside the param eter ranges

given above may cause permanent damage.

Electri cal Spe c if ications

Test conditions unless otherwise noted: V

SUPPLY

= +5 V, T

CASE

= +25 °C, R

BIAS

= 51 Ω, 50 Ω system

Parameter

Conditions

Min

Typ

Max

Units

Operational Frequency Range

DC

6000

MHz

Gain

Freq.=1000 MHz

OIP3 Pout= −1 dBm / tone, Δf= 1 MHz

22.2

dB

Output P1dB

+12.5

dBm

Output IP3

(1)

+25

dBm

Gain

Freq.=2000 MHz

19.2

20.7

21.8

dB

Input Return Loss

35

dB

Output Return Loss

18

dB

Output P1dB

+12.5

dBm

Noise Figure

3.4

dB

Device Voltage

+3.0

+3.4

+3.8

V

Device Current

30

mA

Thermal Resistance, R

TH

270

°C / W

Typical RF Pe rf orm a nc e (1)

Test conditions unless otherwise noted: V

SUPPLY

= +5 V, Icc = 30 mA (typ.), R

BIAS

= 51 Ω, Temp. =+25 °C, 50 Ω System

Parameter

Typical

Units

Frequency 100 500 900 1900 2140 2400 3500 5800 MHz

Gain

22.8

22.6

22.4

20.9

20.6

20.2

18.6

15.5

dB

Input Return Loss

48

46

42

35

29

28

22

14

dB

Output Return Loss

34

29

24

18

17

16

13

8

dB

Output P1dB

+11.6

+12.6

+12.8

+12.2

+11

dBm

Output IP3

(2)

+23.6

+23.5

+24.8

+26

+25.6

+25.4

+23

dBm

Noise Figure

3.4

dB

Notes:

1. Gain and return loss values presen ted abov e, and in the plots of the following section, are measured at the device level.

Applicati on spe cif ic perfor man ce values will differ in accordance with external compon ent s sele cted for the desired fr eq ue ncy

band of operat ion. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.

2. Pout= −1 dBm / tone, 1 MHz tone spacing.

Datasheet: Rev. A 12-05-14 - 2 of 6 - Di sclaimer: Subject to change wi thout notice

ECG001F-G

InGaP HBT Gai n Block

Typical RF Pe rf ormance

Test conditions unless otherwise noted: VSUPPLY = +5 V, Icc = 30 m A (typ.), RBIAS = 51 Ω, 50 Ω System

14

16

18

20

22

24

0123456

Gain (dB)

Frequency (GHz)

Gain vs Frequency

Temp.=+25°C

-40

-30

-20

-10

0

0123456

|S11|, |S22| (dB)

Frequency (GHz)

Return Loss vs Frequency

|S11|

|S22|

Temp.=+25°C

0

20

40

60

80

100

3.2 3.3 3.4 3.5 3.6

I

CC

(mA)

V

DE

(V)

I

CC

vs. V

DE

Temp.=+25°C

20

22

24

26

28

500 1000 1500 2000 2500 3000

OIP3 (dBm)

Frequency (MHz)

OIP3 vs. Frequency

+85°C

+25°C

−40°C

6

8

10

12

14

16

500 1000 1500 2000 2500 3000

P1dB (dBm)

Frequency (MHz)

Output P1dB vs. Frequency

+85°C

+25°C

−40°C

0

1

2

3

4

5

500 1000 1500 2000 2500 3000

NF (dB)

Frequency (MHz)

Noise Figure vs. Frequency

Temp.=+25°C

Typical Device S-Parameters

Test conditions unless otherwise noted: VDEVICE = +3.4 V, ICC = 30 mA, Temp. =+25 °C, ca lib r ated to device leads

Frequency (MHz)

S11 (dB)

S11 (ang)

S21 (dB)

S21 (ang)

S12 (dB)

S12 (ang)

S22 (dB)

S22 (ang)

50

−33.58

15.96

22.85

178.01

−24.47

−1.35

−28.60

3.58

500

−24.53

12.09

22.63

162.01

−24.14

1.89

−22.29

−35.35

1000

−32.76

32.44

22.20

144.90

−23.99

4.76

−25.75

−100.14

1500

−28.56

153.22

21.54

129.42

−23.56

7.59

−20.80

−165.24

2000 −25.13 172.50 20.74 114.94 −23.12 9.11 −17.59 175.89

2500

−28.01

−117.92

20.11

103.13

−22.71

7.41

−20.44

169.69

3000

−28.65

−133.85

19.33

91.28

−22.14

7.37

−18.13

154.41

3500

−28.35

−142.02

18.59

79.59

−21.68

4.16

−16.41

140.24

4000

−25.99

−171.80

17.77

68.13

−20.88

2.49

−14.29

124.73

4500 −22.91 160.22 17.05 57.38 −20.50 2.47 −12.47 116.41

5000

−19.69

153.85

16.39

48.12

−20.03

−0.55

−11.36

113.60

5500

−17.30

152.52

15.78

39.49

−19.55

−5.36

−11.30

114.22

6000

−15.88

144.43

15.21

30.49

−19.14

−6.76

−11.31

113.24

Device S-par am eters are av ail able f or download at www.triquint.com

Datasheet: Rev. A 12-05-14 - 3 of 6 - Di sclaimer: Subject to change wi thout notice

ECG001F-G

InGaP HBT Gai n Block

Application Circuit

C1

C3

L1

C2

J3

J4

U1

R4

Recommended Component Va lues (1)

Frequency (MHz)

50

500

900

1900

2200

2500

3500

L1

820 nH

220 nH

68 nH

27 nH

22 nH

18 nH

15 nH

C1, C2, C3

.018 uF

1000 pF

100 pF

68 pF

56 pF

39 pF

Notes:

1. The values for the components are dependent upon the intended frequency of operation.

Recomme nded Bia s Re s istor Values

V

SUPPLY

(V)

5

6

8

9

10

12

R4 (Ω)

53.3

86.7

153

187

220

287

Com ponent Size

0805

1210

2010

Bill of Material (1)

Reference Des.

Value

Description

Manuf.

Part Number

U1

n/a

InGaP HBT Gain B lock

TriQuint

ECG001F-G

L1

39 nH

Wirewound Inductor, 0603

various

C1, C2

56 pF

Chip Capacitor, 0603

various

C3

0.018 μF

Chip Capacitor, 0603

various

C4

n/a

Do Not Place

R4

(2)

51 Ω

1% Tolerance, 0805

various

Notes:

1. Component values listed for the application have been selected to achieve optimal broadband performance.

2. The value of R4 is dependent upon the s upply voltage and provides bias stability over temperature.

3. The minimum recommended supply voltage is +5 V.

4

C1

Blocking

Capacitor

RF OUT

L1

RF Ch

oke

C3

0.018 µF

R4

Bias

Resistor

RF IN

C4

Bypass

Capacitor

C2

Blocking

Capacitor

Vcc

Icc = 30 mA

ECG001F

Datasheet: Rev. A 12-05-14 - 4 of 6 - Di sclaimer: Subject to change wi thout notice

ECG001F-G

InGaP HBT Gai n Block

Package Marking and Dimensions

Product Marking:

The top surface

of the component

will be

marked with a two-digit

numeric lot code (shown as “XX”)

followed

by a “4” designator.

-H-

-A-

4

3

5

4

3

.15 C D

2X

-D-

.30 C

BOTH SIDES

(6X) b

.10 CA-B D

5

-B-

.10 C

-C-

6X SEATING PLANE

.15 CA-B

2X

c

A2

A1

A

SYMBOL

A

MIN MAX

TOP VIEW

SIDE VIEW

A1

A2

D

E

E1

L

L1

L2

b

c

-1.10 (0.043)

0.10 (0.004)

0

1.00 (0.039)

0.70 (0.028)

2.00 (0.079 BASIC

2.10 (0.083) BASIC

1.25 (0.049) BASIC

0.41 (0.016)0.21 (0.008)

0.42 (0.017) REF

0.15 (0.006) BASIC

8`80`8

12`84`8

e

1.30 (0.051) BASIC

c

0.65 (0.026) BASIC

0.30 (0.012)0.15 (0.006)

0.08 (0.003) 0.22 (0.009)

E1

E1/2

D

e1

PIN 1 ID

E/2

E

e

L2

GAUGE PLANE

-C-

SEATING

PLANE

?

8X 01

e1

?

?1

Notes:

1. Dimensions are in millimeters

(Inches)

2. Dimensions and tolerances per

ASME Y14.5M-1194. Package

conforms to JEDEC MO-203,

Issue B.

PCB Mounting Pattern

4.064 [0.160]

2X 0.762 [0.030]

0.381 [0.015]

0.762 [0.030]

2.515 [0.099]

2X 1.207 [0.048]

16X Ø.254 (.010) PLATED THRU VIA HOLES

1.524 [0.060]

2X 0.773 [0.030]

1.301 [0.051]

2X 1.270 [0.050]

6.329 [0.249]

2X 0.203 [0.01]

2X 0.406 [0.016]

6

2X 0.939 [0.037]

4X 0.889 [0.035]

2X 0.914 [0.036]

2X 0.387 [0.015]

Notes:

1. All dimensions are in millim ete r s (inches). Angles are in degrees.

2. Use 1 oz. copper minimum for top and bottom layer metal.

3. Vias are required under the backside paddle of thi s device for proper RF/DC grounding and thermal dissipation.

4. Do not remove or minimize via hole structure in the PCB. Thermal and RF grounding is critical.

5. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diam eter of 0.25 mm (0.10”).

6. The RF I/O trace tr an sit ion sh own is to a 30 mil wide line. Modify transition as required to interface with other line widths.

XX4

Datasheet: Rev. A 12-05-14 - 5 of 6 - Di sclaimer: Subject to change wi thout notice

ECG001F-G

InGaP HBT Gai n Block

Product Com pliance Informa ti on

ESD Sens it ivity Ratings

Caut ion! ESD-Se nsitive Device

ESD Rating: Class 1A

Value: ≥ 250 V to < 500 V

Test: Human Body Model (HBM)

Standard: ESDA/JEDEC St and ard JS-001-2012

Solderability

Com patible with both lead

-free ( 26 0

°C m axim um r ef low

temperature) and tin/lead (245

°C maximum reflow

temperature) soldering processes.

Contact plati ng:

NiPdAu

RoHs Compliance

This part

is

compliant with EU 2002/95/EC RoHS

directive (R estrictions on the Use of Certain Ha zardous

Substances in Electrical and Electronic Equipment).

This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C15H12Br402) Free

• PFOS Free

• SVHC Free

MSL Rati ng

MSL Rati ng: Level 3

Test: 260 °C convection reflow

Standard: JEDEC Standard IPC/JEDEC J-STD-020

Contact Information

For the lates t specific ations, add itional prod uct infor mation, worldwide sal es and distr ibution loca tions, an d inform ation

about TriQuint:

Web: www.triquint.com Tel: +1.503.615.9000

Email: info-sales@triquint.com Fax: +1.503.615.8902

For technical questions and application information:

Email: sjcapplications.engineering@triquint.com

Impor t a nt Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information

contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained

herein. T riQuint assum es no respons ibilit y or liabilit y whatsoev

er for the use of the inform ation contain ed herein.

The

information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with

such information is entirely with the user.

All information contained herein is su

bject to change without notice.

Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The

information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any

patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or

anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in

medical, life-saving, or life

-

sustaining applications, or other applications where a failure would reasonab ly be expected to cause severe personal

injury or death.

Datasheet: Rev. A 12-05-14 - 6 of 6 - Di sclaimer: Subject to change wi thout notice