1C3D04065E Rev. 3, 10-2020
C3D04065E
Silicon Carbide Schottky Diode
Z-Rec® 
Features
• 650-Volt Schottky Rectier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coecient on VF
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Package
TO-252-2
Part Number Package Marking
C3D04065E TO-252-2 C3D04065
PIN 1
PIN 2 CASE
VRRM = 650 V
IF (TC=135˚C) = 6 A
Qc
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 650 V
VRSM Surge Peak Reverse Voltage 650 V
VDC DC Blocking Voltage 650 V
IFContinuous Forward Current
13.5
6
4
A
TC=25˚C
TC=135˚C
TC=155˚C
Fig. 3
IFRM Repetitive Peak Forward Surge Current 17
12 ATC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
IFSM Non-Repetitive Peak Forward Surge Current 30.5
20 ATC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8
IF,Max Non-Repetitive Peak Forward Surge Current 220
160 ATC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse Fig. 8
Ptot Power Dissipation 52
22.5 WTC=25˚C
TC=110˚C Fig. 4
dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V
∫i2dt i2t value 4.65
2A2sTC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
T
J , Tstg  
 
2C3D04065E Rev. 3, 10-2020
40
60
80
100
Reverse Leakage Current, I
RR (uA)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
0
20
0 200 400 600 800 1000 1200
Reverse Leakage Current, I
Reverse Voltage, VR(V)
TJ= -55 °C
TJ= 25 °C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.4
1.7
1.7
2.4 VIF = 4 A TJ=25°C
IF = 4 A TJ=175°C Fig. 1
IRReverse Current 6
12
30
120 μA VR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 10 nC
VR = 400 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C Total Capacitance
231
18.5
15
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 1.4 μJ VR = 400 V Fig. 7

Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 2.9 °C/W Fig. 9
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
4
6
8
10
12
Foward Current, I
F
(A)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
0
2
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, V
F
(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D04065E Rev. 3, 10-2020
20
25
30
35
40
45
50
IF
(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
5
10
15
25 50 75 100 125 150 175
TC(°C)
Figure 3. Current Derating Figure 4. Power Derating
20
30
40
50
60
P
TOT
(W)
0
10
20
25 50 75 100 125 150 175
TC(°C)
Typical Performance
Capacitive Charge, Q
Capacitive Charge, Q
100
150
200
250
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
50
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
4C3D04065E Rev. 3, 10-2020
1.5
2
2.5
3
3.5
4
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
0.5
1
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
100
1,000
I
FSM
(A)
T
J_initial
= 25 °C
T
J_initial
= 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
Figure 9. Transient Thermal Impedance
100E-3
1
Thermal Resistance (oC/W)
0.5
0.3
0.1
0.05
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, t
p
(s)
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C3D04065E Rev. 3, 10-2020
Recommended Solder Pad Layout
Part Number Package Marking
C3D04065E TO-252-2 C3D04065
TO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Tjb June 2015
MX+DI+PSI
Package TO-252-2
Package Dimensions
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b
2
0.653
1.143
b
3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
6.73
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
Ɵ
0°
8°
66 C3D04065E Rev. 3, 10-2020
Copyright © 2020 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Related Links
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT + If * RT
VT = 1.00 + (TJ * -1.1*10-3)
RT = 0.069 + (TJ * 8.3*10-4)