1/30
XC9267
Series
36V Opera tion 600mA Synchronous St ep-Do wn DC/ DC Co n verters
Lx
PG
FB
GN D
V
IN
EN/SS
C
IN
C
L
L
R
FB1
R
FB2
C
FB
R
PG
2.2μF
10μF×2
■FEATURES
Input Voltage Range : 3.0
~
36V (Absolute Max 40V)
Output Voltage Range 1.0
~
25V
FB Voltage : 0.75
V±
1.5
%
Oscillation Frequency : 1.2MHz, 2.2MHz
Output Current : 600mA
Control Methods
:
PWM control
Efficiency88%@12V→5V, 300mA
Soft-start Time : Adjustable by RC
Protection Circuits : Over Current Protection
: Thermal Shutdown
Output Capacitor
:
Ceramic Capacitor
Ope rati ng Ambient Temperature
: - 40℃ ~ + 105℃
Packages
: SOT-89-5 (Without Power Good)
: USP-6C (With Power Good)
Environmentally Friendly
EU RoHS Compliant, Pb Free
■GENERAL DESCRIPTI ON
The XC9267 seri es are 36V op eration synchr onous step-d own DC/ DC converter IC s with a built-in P-c hannel M OS driver transi stor
and N-channel MOS switching transistor.
The X C9267 serie s has o perating v oltage r ange of 3.0V ~36.0V and h igh-efficiency pow er supply up t o an output curren t of 600mA .
Low ESR capacitors such as ceramic capacitors can be used for the load capacitor (CL).
A 0.75V reference voltage source is incorporated in the IC, and the output voltage can be set to a value from 1.0V to 25.0V us ing
external resistors (RFB1, RFB2).
1.2MHz or 2.2MHz can be selected for the switching frequency.
The soft-st art time is inter nally set to 2. 0ms (TY P.), but can be adjusted to set a lo nger time using a n external res istor and capac itor.
With the built-in UVLO function, the driver transistor is forced OFF when input voltage becomes 2.7V or lower.
The output state can be monitored using the power good function.
Internal protection circuits include over current protection and thermal s hutdown circuits to enable safe use.
■APPLICATIONS
● Electric Meter
● Gas Detector
● Various Sensor
● Industrial Equipment
● Home appliance
■TYPICAL APPLICA TION CIRCUIT
ETR05054-002
■
TYPICAL PERFORMANCE
CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
0.1 1 10 100 1000
Efficiency :EFFI[%]
Output Current :IOUT[mA]
XC9267B75Cxx
(V
IN
=12V, V
OUT
=5V, f
OSC
=1.2MHz)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
2/30
XC9267 Series
■BLOCK DIAGRAM
XC9267 Series
Diodes inside the circuit are an ESD protection diodes and a paras itic diodes.
3/30
XC9267
Series
■PRODUCT CLASSIFICATIO N
●Ordering Information
XC9267①②③④⑤⑥-⑦(*1) PWM control
DESIGNATOR ITEM SYMBOL DESCRIPTION
① Type B Refer to Selection Guide
②③ FB Voltage 75 0.75V
④ Oscillation Frequency C 1.2MHz
D 2.2MHz
⑤⑥-⑦ Packages PR-G(*1) SOT-89-5 (1,000pcs/Reel)
ER-G(*1) USP-6C (3,000pcs/Reel)
●Selection Guide
FUNCTION B TYPE
SOT-89-5 USP-6C
Chip Enable Yes Yes
UVLO Yes Yes
Thermal Shutdown Yes Yes
Soft Start Yes Yes
Power-Good - Yes
Current Limitter
(Automatic Recovery)
Yes Yes
(*1)
The
“
-G
”
suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
4/30
XC9267 Series
■PIN CONFIGURATION
* The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance
mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the GND (No. 2) pin.
■PIN ASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
SOT-89-5 USP-6C
1 1 Lx Switching Output
2 2 GND Ground
3 3 FB Output Voltage Sense
- 4 PG Power-good Output
4 5 EN/SS Enable Soft-start
5 6 VIN Power Input
1 2 3
45 2
Lx GND FB
3
42
1
5
6
VIN EN/SS
SOT-89-5
(TOP VI EW)USP-6C
(BO TTOM VIEW)
VIN
EN/SS
PG
Lx
GND
FB
5/30
XC9267
Series
■FUNCTION CHART
PIN NAME SIGNAL STATUS
EN/SS
L Stand-by
H Active
OPEN Undefined State(*1)
(*1) Please do not leave the EN/SS pin open. Each should have a certain voltage
PIN NAME CONDITION SIGNAL
PG EN/SS = H
VFB > VPGDET H (High impedance)
V
FB
≦
V
PGDET
L (Low impedance)
Thermal Shutdown L (Low impedance)
UVLO
(VIN < V
UVLO1
)
Undefined State
EN/SS = L Stand-by L (Low impedance)
■ABSOLU TE M AXIMUM RATI N GS Ta=25℃
PARAMETER SYMBOL RATINGS UNITS
VIN Pin Voltage VIN -0.3 ~ +40 V
EN/SS Pin Voltage VEN/SS -0.3 ~ +40 V
FB Pin Voltage VFB -0.3 ~ +6.2 V
PG Pin Voltage(*1) VPG -0.3 ~ +6.2 V
PG Pin Current(*1) IPG 8 mA
Lx Pin Voltage VLx -0.3 ~ VIN + 0.3 or +40 (*2) V
Lx Pin Current ILx 1800 mA
Power
Dissipation SOT-89-5 Pd 1750 (JESD51-7 board) (*4) mW
USP-6C(DAF) 1250 (JESD51-7 board) (*4)
Surge Voltage VSURGE +46(*3) V
Operating Ambient Temperature Topr -40 ~ +105 ℃
Storage Temperature Tstg -55 ~ +125 ℃
* All voltages are described based on the GND pin.
(*1) For the USP-6C Pack age o nly.
(*2) The maximum value should be either VIN+0.3 or 40 in the lowest.
(*3) Applie d Time ≦400ms
(*4) The power dissipation figure shown is PCB mounted and is for reference only.
The mounting condition is please refer to PACKAGING INFORMATION.
6/30
XC9267 Series
■ELECTRICAL CHARACTERISTICS
XC9267series
Ta=25℃
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT CIRCUIT
FB Voltage VFBE VFB=0.739V→0.761V,
VFB Voltage when Lx pin voltage
changes from"H" level to "L" level 0.739 0.750
0.761
V ②
Setting Output
Voltage Range (*1) VOUTSET - 1 - 25 V -
Operating Input
Voltage Range (*1) VIN - 3 - 36 V -
UVLO Detect Voltage VUVLOD VEN/SS=12V,VIN:2.8V→2.6V,VFB=0V
VIN Voltage which Lx pin voltage
holding "H" level 2.6 2.7 2.8 V ②
UVLO Release Voltage VUVLOR VEN/SS=12V,VIN:2.7V→2.9V,VFB=0V
VIN Voltage which Lx pin voltage
holding "L" level 2.7 2.8 2.9 V ②
Quiescent Current Iq VFB=0.825V XC9267B75C - 180 350 μA ④
XC9267B75D - 290 500
Stand-by Current ISTBY VIN=12V, VEN/SS=VFB=0V - 1.65 2.50 μA ④
Oscillation Frequency fOSC
Connected to
external
components,
IOUT=200mA
XC9267B75C 1.098 1.200 1.302 MHz ①
XC9267B75D 2.013 2.200 2.387
Minimum On Time tONMIN Connec ted to ex ternal co mpon ents - 85 (*2) - ns ①
Minimum Duty Cycle DMIN VFB=0.825V - - 0 % ②
Maximum Duty Cycle DMAX VFB=0.675V 100 - - % ②
Lx SW "H" On Resistanc e RLxH VFB=0.675V, ILx=200mA - 1.20 1.38 Ω ⑤
Lx SW "L" On Resis tance RLxL -
0.60
(*2) - Ω ⑤
Highside Curr ent Li mit (*3) ILIMH VFB=VFBE×0.98 1.00 1.30 - A ⑤
Internal Soft-Start Time tSS1 VFB=0.675V 1.6 2.0 2.4 ms ②
External Soft-Start Time tSS2 VFB=0.675V
RSS=430KΩ, CSS=0.47μF 21 26 33 ms ③
PG detect voltage (*4) VPGDET
VFB=0.712V→0.638V, RPG:100kΩ
pull-up to 5V
VFB Voltage when PG pin voltage
changes from"H" level to "L" level
0.638 0.675 0.712 V ⑤
PG Output voltage (*4) VPG VFB=0.6V, IPG=1mA - - 0.3 V ②
Efficiency (*5) EFFI Connected to ex ternal co mpon ents,
VIN=12V, VOUT=5V, IOUT=300mA - 88 - % ①
FB Voltage
Temperature
Characteristics
ΔVFB/
(ΔTopr・VFBE) -40℃≦Topr≦105℃ - ±100 - ppm/℃ ②
Test Condition: Unless otherwise stated, VIN=12V, VEN/SS=12V, VPG:OPEN (*4)
Peripheral parts c onnection conditions：
L=6.8μH,RFB1=680kΩ,RFB2=120kΩ,CFB=18pF,CL=10μF×2parallel, CIN=2.2μF
(*1) Please use within the range of VOUT/VIN≧tONMIN[ns]×fOSC[MHz]×10-3
(*2) Design reference value. This parameter is provided only for reference.
(*3) Current limit denotes the level of detection at peak of coil current.
(*4) For the USP-6C Package only.
(*5) EFFI = {(output voltage) x (output current)} / {(i nput volt age) x (input current)} x 100
7/30
XC9267
Series
■ELECTRICAL CHARACTERISTICS(Continued)
XC9267 series Ta=25℃
Test Condition: Unless otherwise stated, VIN=12V, VEN/SS=12V, VPG:OPEN (*4)
(*4) For the USP-6C Package only.
ARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT CIRCUIT
FB "H" Current IFBH VIN=VEN/SS=36V, VFB=3.0V -0.1 - 0.1 μA ④
FB "L" Current IFBL VIN=VEN/SS=36V, VFB=0V -0.1 - 0.1 μA ④
EN/SS "H" Voltage VEN/SSH VEN/SS=0.3V→2.5V, VFB=0.71V
VEN/SS Voltage when Lx pin voltage
changes from "L" level to " H" level 2.5 - 36 V ②
EN/SS "L" Voltage VEN/SSL VEN/SS=2.5V→0.3V, VFB=0.71V
VEN/SS Voltage when Lx pin voltage
changes from "H" level to "L" l ev el - - 0.3 V ②
EN/SS "H" Current IEN/SSH VIN=VEN/SS=36V, VFB=0.825V - 0.1 0.3 μA ④
EN/SS "L" Current IEN/SSL VIN=36V, VEN/SS=0V, VFB=0.825V -0.1 - 0.1 μA ④
Thermal Shutdown
Temperature TTSD J unction Temperature - 150 - ℃ -
Hysteresi s Width THYS Junc tion Temperature - 25 - ℃ -
8/30
XC9267 Series
■TEST CIRCUITS
CIRCUIT①
CIRCUIT②
CIRCUIT③
* PG Pin is USP-6C Package only.
V
IN
EN/SS
PG
GND
Lx
FB
L
C
FB
R
FB1
R
FB2
A
V
A
V
Probe
V
V
OUT
C
IN
C
L
EN/SS
PG
GND
Lx
FB
V
V
V
V
100kΩ
Probe
Probe
C
IN
V
IN
V
EN/SS
PG
GND
Lx
FB
Probe
Probe
V
RSS=430kΩ
CSS=0.47μFV
V
V
100kΩ
VIN
CIN
9/30
XC9267
Series
■TEST CIRCUITS(Continued)
CIRCUIT④
CIRCUIT⑤
* PG Pin is USP-6C Package only.
EN/SS
PG
GND
Lx
FB
A
VV
A
A
V
V
IN
EN/SS
PG
GND
Lx
FB
V
V
VV
V
R
PG
=100kΩ
Probe
Probe
Probe
C
IN
V
IN
10/30
XC9267 Series
■TYPICAL APPLICA TION CIRCUIT
＜Inductance value setting＞
For the XC9267 Series, operation is optimized by setting the following inductance value according to the set frequenc y and
setting output voltage.
fOSCSET: Frequency setting , VOUTSET: Output voltage setting
【Typical Examples】
fOSCSET conditions MANUFACTURER PRO DUCT NUMB E R VALUE
L
1.2MHz
1V＜VOUTSET≦2V
TDK CLF5030NIT-3R3N
3.3μH
Coilcraft XEL4030-332ME
Taiyo Yuden NRS4018T3R3MDGJ
Tokyo Coil SHP0420P-F3R3NAP
2V＜VOUTSET≦3.3V
TDK CLF5030NIT-4R7N
4.7μH
Coilcraft XEL4030-472ME
Taiyo Yuden
NRS5024T4R7MMGJ
Tokyo Coil SHP0530P-F4R7AP
3.3V＜VOUTSET≦6V
TDK CLF5030NIT-6R8N
6.8μH
Coilcraft XEL4030-682ME
Taiyo Yuden NRS5024T6R8MMGJ
Tokyo Coil
SHP0530P-F6R8AP
6V＜VOUTSET≦25V
TDK
CLF5030NIT-100N
10μH Taiyo Yuden NRS5040T100MMGJ
Tokyo Coil SHP0530P-F100AP
2.2MHz
1V＜VOUTSET≦2V
TDK
CLF5030NIT-1R5N
1.5μH Coilcraft XEL4030-152ME
Taiyo Yuden NRS4018T1R5NDGJ
Tokyo Coil SHP0420P-F1R6NAP 1.6μH
2V＜VOUTSET≦3.3V
TDK CLF5030NIT-2R2N
2.2μH
Coilcraft XEL4030-222ME
Taiyo Yuden NRS4018T2R2MDGJ
Tokyo Coil
SHP0420P-F2R2NAP
3.3V＜VOUTSET≦6V
TDK CLF5030NIT-3R3N
3.3μH
Coilcraft
XEL4030-332ME
Taiyo Yuden NRS4018T3R3MDGJ
Tokyo Coil
SHP0420P-F3R3NAP
6V＜VOUTSET≦25V
TDK CLF5030NIT-4R7N
4.7μH
Coilcraft XEL4030-472ME
Taiyo Yuden NRS5024T4R7MMGJ
Tokyo Coil SHP0530P-F4R7AP
CIN 1.2MHz
VIN
＜
20V
TDK C2012X6S1H475K125AC 4.7μF/50V
VIN≧20V TDK C2012X6S1H475K125AC 4.7μF/50V 2parallel
2.2MHz
VIN
＜
20V
TDK
C2012X7R1H225K125AC
2.2μF/50V
VIN≧20V TDK C2012X7R1H225K125AC 2.2μF/50V 2parallel
CL - - TDK
C2012X7R1A106K125AC
10μF/10V 2parallel
C3216X7R1E106K160AB 10μF/25V 2parallel
C3225X7R1H106M250AC 10μF/50V 2parallel
Lx
PG
FB
GND
VIN
EN/SS
CIN
CL
L
RFB1
RFB2
CFB
RPG
11/30
XC9267
Series
■TYPICAL APPLICA TION CIRCUIT(Continued)
< Output voltage setting >
The output voltage can be set by adding an external dividing resistor.
The output voltage is determined by the equation below based on the values of RFB1 and RFB2.
VOUT=0.75V× (RFB1+RFB2)/RFB2
With RFB2≦200kΩ and RFB1+RFB2≦1MΩ
<CFB setting>
Adjust the value of the phas e compensation speed-up capacitor CFB using the equation below.
A target value for fzfb of about is optimum.
【Setting Example】
To set output voltage to 5V with fosc=1.2MH z, CL=10μF×2, L=6.8μH
When RFB1=680kΩ, RFB2=120kΩ, VOUTSET=0.75V× (680kΩ+120kΩ) / 120kΩ=5.0V
And fzfb is set to a target of 13. 65 kHz using the above equation,
CFB=1/ (2×π×13.65 kHz×680kΩ) =17.15pF. A c apacitor of E24 series is 18pF.
XC9267B75Cxx / fOSC=1.2MHz XC9267B75Dxx / fOSC=2.2MHz
VOUTSET RFB1 RFB2 L CFB fzfb VOUTSET RFB1 RFB2 L CFB fzfb
1.2V 120kΩ 200kΩ 3.3μH 68pF 19.6kHz 1.2V 120kΩ 200kΩ 1.5μH 47pF 29.1kHz
3.3V 510kΩ 150kΩ 4.7μH 18pF 16.4kHz 3.3V 510kΩ 150kΩ 2.2μH 12pF 24.0kHz
5.0V 680kΩ 120kΩ 6.8μH 18pF 13.7kHz 5.0V 680kΩ 120kΩ 3.3μH 12pF 19.6kHz
12V 360kΩ 24kΩ 10μH 39pF 11.3kHz 12V 360kΩ 24kΩ 4.7μH 27pF 16.4kHz
<Soft-start Time Setting>
The soft-start time can be adjusted by adding a capacitor and a resistor to the EN/SS pin.
Soft-start time (tSS2) is approximated by the equation below according to values of VEN/SS, RSS, and CSS.
tss2=Css×Rss× ln ( VEN/SS / (VEN/SS-1.45) )
【Setting Example】
When CSS=0.47μF, RSS=430kΩ and VEN/SS=12V, tSS2=0.47x10-6 x 430 x 103 x (ln (12/ (12-1.45)) =26ms (Approx.)
*The soft-start time is the time from the start of VEN/SS until the output voltage reaches 90% of the set voltage.
If the EN/SS pin voltage rises steeply without connecting CSS and RSS (RSS=0Ω), Output rises with taking the soft-start time of
tSS1=2.0ms (TYP.) which is fixed internally.
1
21
FB
FB
Rfzfb
C××
=
π
LC
fzfb
L
×
=
π
2
1
V
EN/SS
V
OUT
90 % of setting voltage
t
SS1
t
SS2
EN/SS
C
SS
R
SS
V
EN/SS
12/30
XC9267 Series
■OPERATIONAL EXPLANATION
The XC9267 series consists internally of a reference voltage supply wi th soft-start function, error amp, P WM comparat or, ramp
wave c i rcuit, oscillator circuit, phase compensation (Current feedback) circuit, current limiting circuit, current limit PFM circuit,
High-side driver Tr ., Low -side driver Tr., buffer drive circuit, internal power s upply (LocalReg) circuit, under-voltage lockout
(UVLO) circuit, gate clamp (CLAMP) circuit, thermal shutdown (TSD) circuit, power good comparator, PWM control block and
other elem ents.
The voltage feedback from the FB pin is compared to the internal reference voltage by the error amp, the output from the error
amp is phase compensated, and the signal is input to the PWM comparator to determine the ON time of switching during PWM
operation. The output signal from the error amp is com pared to the ramp wave by the PWM comparator, and the output is sent
to the buffer drive circuit and output from the LX pin as the duty width of switching. This operation is performed continuously to
stabilize the output voltage.
The driver transistor current is monitored at each switching by the phase compensation (Current feedback) circuit, and the
output signal from the error amp is modulated as a multi-fe e dbac k sign al. This allow s a stable feedback system to be obtained
even when a low ESR capacitor such as a ceramic capacitor is used, and this stabilizes the output voltage.
XC9267 Series
* Diodes inside t he ci rcuits are ESD protection diodes and parasitic diodes.
<Reference voltage source>
The reference voltage sourc e provides the reference voltage to ensure stable output voltage of the DC/DC converter.
<Oscillator circuit>
The oscillator circuit determines switching frequency.1.2MHz or 2.2MHz is available for the switching frequency.
Clock pulses generated in this circuit are used to produce ramp waveforms needed for PWM operation.
<Error amplifier>
The error amplifier is designed to monitor output voltage. The amplifier compares the reference voltage with the feedback
voltage divided by the internal voltage divider, RFB1 and RFB2. When a voltage is lower than the reference voltage, then the
voltage is fed back, the output voltage of the error amplifier increases. The error amplifier output is fixed internally to deliver an
optimized signal to the mixer.
PWM Control
L OG IC
FB
+
-
+
-
Low
Si de
Buffer
Lx
V
IN
EN/SS
Chi p
Enable
Vre f
So ft Star t
Under
Voltage
Lock Out
Curren t
Limit
Er r Amp
GND
PG
(USP-6C
Package Only)
+
-
Thermal
Sh ut do wn
Comparator
PWM
LocalReg Current
SENS E
Gate
CL A MP
PowerGood
Comparator
each
circuit
Ramp
Wave Oscillator
High
Si de
Buffer
Operation
Enable
each
circuit
Curren t
feed
back
13/30
XC9267
Series
■OPERATIONAL EXPLANATION(Continued)
<Current limiting>
The current limiting circuit of the XC9267 series monitors the current that flows through the High-side driver transistor and
Low-side driver transistor, and when over-current is detected, the current limiting function activates.
(1) High-side driver Tr. current limitin g
The current in the High-side driver Tr. is detected to equivalently monitor the peak value of the coil current. T he High-side driver
Tr. current limi ting function forcibly turns off the High-side driver Tr. when the peak value of the coil current reaches the High-
side driver current limit value ILIMH.
High-side driver Tr . current li mi t value ILIMH=1.3A (TYP.)
(2) Low-side driver Tr. current limiting
The current in the Low -side driver Tr. is detected to equivalently monitor the bottom value of the coil current. The Low-side
driver Tr. current limiting function operates when the High-side driver Tr. current limiting value reaches I LIMH. The Low-side driver
Tr. current limi ting function prohibits the High-side driver Tr. from turning on in an over-current state where the bottom value of
the coil current is higher than the Low-side driver Tr. current limit value ILIML.
Low side driver Tr. current limit value ILIML=0.9A (TYP.)
The current foldback circuit operates control to lower the switching frequency fOSC. When the over-current state is released,
normal operation resumes.
I
LX
V
OUT
V
LX
I
LIMH
=1.3A(TYP.)
I
LIML
=0.9A(TYP.)
0A
0V
Current Limit
14/30
XC9267 Series
■OPERATIONAL EXPLANATION(Continued)
<Soft-start function>
The output voltage of XC9267 rises with soft start by slowly rai s ing the reference voltage. The rise time of this reference
voltage is the soft star t time. The soft-start ti me is set to tss1 (TYP. 2.0ms) which is fixed internally or to the time set by adding a
capacitor and a resistor to the EN / SS pin whichever is later.
<Thermal shut dow n>
The thermal shutdown (TSD) as an over temperature limit is bui lt in the XC9267 series.
When the junction temperature reaches the detection temper ature, the dr iv er tra nsi stor is forcib ly turne d of f. When the juncti on
temperature falls to the release temperature while in the output stop state, restart takes plac e by soft-start.
<UVLO>
When the VIN pin voltage falls below VUVLO1 (TYP. 2.7V), the driver transistor is forcibly turned off to prevent false pulse output
due to instable operation of the internal circui ts. When the VIN pin voltage rises above VUVLO2 (TYP. 2.8V), the UVLO functi on is
released, the soft-start function activates, and output start operation begins. Stopping by UVLO is not shutdown; only pulse
output is stopped and the internal circuits continue to operate.
<Power good>
On USP-6C Package, the output state can be monitored using the power good function. The PG pin is an Nch open drain
output, therefore a pull-up resistance (approx. 100kΩ) must be connected to the PG pin.
CONDITIONS
SIGNAL
EN/SS=H
VFB > VPGDET
H (High impedance)
VFB
≦
VPGDET
L (Low impedance)
Thermal Shutdown
L (Low impedance)
UVLO
(VIN < V
UVLO1
)
Undefined State
EN/SS=L
Stand-by
L (Low impedance)
15/30
XC9267
Series
■NOTE ON USE
1) In the case of a temporary and transient voltage drop or voltage rise.
If the absolute maximum ratings are exceeded, the IC may be deteriorate or destroyed.
Case 1
If a voltage exceeding the absolute maximum rating is applied to this IC due to chattering by a mechanical switch or an
external surge voltage, etc., take measures using a protection circuit such as TVS.
Case 2
Under conditions where the input voltage is less than the output setting voltage, the absolute maximum rating of the Lx pin
may be exceeded, and an overcurrent may flow in the parasitic diode inside the IC.
If excessive current flows in the parasitic diode, take measures such as adding the SBD be tw een VOUT and VIN.
2) Make sure that the absolute maximum ratings of the external components and of this IC are not exceeded.
3) The DC/DC converter characteristics depend greatly on the ex ternally connected components as well as on the characteristics
of this IC, so refer to the specifications and s tandard ci rcuit examples of each component when carefully considering which
components to select.
Be especially careful of the capacitor characteristics and use X7R or X5R (EIA standard) c er ami c ca pa ci t or s.
The capacitance decrease caused by the bias voltage may become rem arkable depending on the external size of the
capacitor.
4) The DC/DC converter of this IC uses a current-limiting circuit to monitor the coil peak current. If the potential dro pout v oltag e
is large or the load current is large, the peak current will increase, which makes it easier for current limitation to be applied
which in turn could cause the operation to bec ome unstable. When th e peak current becomes large, a djust the coil inductance
and suff iciently check the operation.
The following formula is used to show the peak current.
Peak Current: Ipk = (VIN – VOUT) × VOUT / VIN / (2 × L × fOSC) + IOUT
L: Coil Inductance [H]
fOSC: Oscillation Frequency [Hz]
IOUT: Load Current [A]
5) If there is a large dropout voltage, a circuit delay could create the ramp-up of coil current with staircase waveform exceeding
the current limit.
6) Even in the PWM control, the intermittent operation occurs and the ripple voltage becomes higher, when the minimum On
Time is faster than 85ns (typ.) as well as the dropout voltage is large and output current is small.
Lx
PG
FB
GN D
V
IN
EN/SS
C
IN
C
L
L
R
FB1
R
FB2
C
FB
R
PG
TVS
Lx
PG
FB
GN D
V
IN
EN/SS
C
L
L
R
FB1
R
FB2
C
FB
R
PG
Lx
PG
FB
GN D
V
IN
EN/SS
C
IN
VOUT
SBD
16/30
XC9267 Series
■NOTE ON USE(Continued)
7） The ripple voltage could be increased when switching from discontinuous c onduction mode to continuous conduction mode
and at switching to 100% Duty cycle. Please evaluate IC well on customer’s PCB.
8) If the voltage at the EN/SS Pin does not start from 0V but it is at the midpoint potential when the power is switched on, the
soft start function may not work properly and it may cause the larger inrush current and bigger ripple voltages.
9) Torex places an impor tanc e on i mprovin g our produ cts an d the ir reli ability. We reque st th at u sers i ncorporat e f ail-safe designs
and post-aging protection treatment when using Torex products in their systems.
10) Instructions of pattern layouts
The operation may become unstable due to noise and/or phase lag from the output current when the wire impedance is
high, please place the input capacitor(CIN) and the output capacitor (CL) as close to the IC as pos s ible.
(1) In order to stabilize VIN voltage level, we recommend that a by-pass capacitor (CIN) be connected as close as possible to
the VIN and GND pins.
(2) Please mount each external component as close to the IC as possible.
(3) Wire external components as close to the IC as possible and use thick, short connecting traces to reduce the circuit
impedance.
(4) M ake sure th at the G N D traces are as thic k as pos sib le, as v ariations in ground pot ent i al ca use d by hig h grou nd c ur r ents
at the time of switchin g ma y result in instabi lity of the IC.
(5) Please not e t hat i nternal driver t ransi stor s brin g on heat because of the lo ad current and ON resistan ce of Highside driver
transistor, Lowside driver transistor. Please make sure that the heat is dissipated properly, especially at higher
temperatures.
17/30
XC9267
Series
<Reference Pattern Layout>
USP-6C
Layer 3
Layer 4
Layer 1
Layer 2
SOT-89-5
Layer 3
Layer 4
Layer 1
Layer 2
18/30
XC9267 Series
■TYPICAL PERFORMANCE CHARACTERI STICS
(1) Efficiency vs. Output Current
(2) Output Voltage vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
Effici ency :EF F I[%]
Output Current :I
OUT
[mA]
XC9267B75Dxx
(V
IN
=12V, V
OUT
=3.3V, ｆ
OSC
=2.2MHz)
L=2.2μH(CLF5030NIT-2R2), C
IN
=2.2μF
×
2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
Efficiency :EFFI[%]
Output Current :I
OUT
[mA]
XC9267B75Cxx
(V
IN
=12V, V
OUT
=3.3V, f
OSC
=1.2MHz)
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
Efficiency :EFFI[%]
Output Current :I
OUT
[mA]
XC9267B75Cxx
(V
IN
=12V, V
OUT
=5V, f
OSC
=1.2MHz)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
Effici ency :EF F I[%]
Output Current :I
OUT
[mA]
XC9267B75Dxx
(V
IN
=12V, V
OUT
=5V, f
OSC
=2.2MHz)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
3.00
3.10
3.20
3.30
3.40
3.50
3.60
110 100 1000
Output Voltage : V
OUT
[V]
Output Current :I
OUT
[mA]
XC9267B75Cxx
(V
IN
=12V, V
OUT
=3.3V, f
OSC
=1.2MHz)
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
4.70
4.80
4.90
5.00
5.10
5.20
5.30
110 100 1000
Output Voltage : V
OUT
[V]
Output Current :I
OUT
[mA]
XC9267B75Cxx
(V
IN
=12V, V
OUT
=5V, f
OSC
=1.2MHz)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
19/30
XC9267
Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(2) Output Voltage vs. Output Current
(3) Ripple Voltage vs. Output Current
(4) FB Vo ltag e vs . Am bient Temper atur e (5) UVLO Voltage vs. Ambient Temperature
3.00
3.10
3.20
3.30
3.40
3.50
3.60
110 100 1000
Output Voltage : V
OUT
[V]
Output Current :I
OUT
[mA]
XC9267B75Dxx
(VIN=12V, VOUT=3.3V, fOSC=2.2MHz)
L=2.2μH(CLF5030NIT-2R2), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
4.70
4.80
4.90
5.00
5.10
5.20
5.30
110 100 1000
Output Voltage : V
OUT
[V]
Output Current :I
OUT
[mA]
XC9267B75Dxx
(VIN=12V, VOUT=5V, fOSC=2.2MHz)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
R ipple Voltage :Vr[m V]
Output Current :I
OUT
[mA]
XC9267B75Cxx
(VIN=12V, VOUT=5V, fOSC=1.2MHz)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
0
10
20
30
40
50
60
70
80
90
100
0.1 110 100 1000
R ipple Voltage :Vr[m V]
Output Current :I
OUT
[mA]
XC9267B75Dxx
(VIN=12V, VOUT=5V, fOSC=2.2MHz)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
2.5
2.6
2.7
2.8
2.9
3.0
-50 -25 025 50 75 100 125
U VLO Voltage :V
UVLO1
,V
UVLO2
[V]
Ambient Temperature :Ta[℃]
XC9267B75xxx
VUVLO1(DetectVoltage)
VUVLO2(ReleaseVoltage)
0.740
0.745
0.750
0.755
0.760
-50 -25 025 50 75 100 125
FB Voltage :V
FB
[V]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V
20/30
XC9267 Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(6) Oscillation Frequency vs. Ambient T emperature
(7) Stand-by Current vs. Ambient Temperature (8) Lx SW ON Resistance vs. Ambient Temperature
(9) Quiescent Cur r ent vs. A mbient Tem per ature
960
1040
1120
1200
1280
1360
1440
-50 -25 025 50 75 100 125
Oscillation Frequency:f
OSC
[kHz]
Ambient Temperature :Ta[℃]
XC9267B75Cxx
(f
OSC
=1.2MHz)
V
IN
=12V
1750
1900
2050
2200
2350
2500
2650
-50 -25 025 50 75 100 125
Oscillation Frequency:f
OSC
[kHz]
Ambient Temperature :Ta[℃]
XC9267B75Dxx
(f
OSC
=2.2MHz)
V
IN
=12V
0.0
1.0
2.0
3.0
4.0
-50 -25 025 50 75 100 125
Stand-by C urrent :I
STB
[μA]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V
0.0
0.5
1.0
1.5
2.0
-50 -25 025 50 75 100 125
Lx SW ON Resistance :R
ON
[Ω]
Ambient Temperature :Ta[℃]
XC9267B75xxx
H ighs ide SW .
Low s ide SW .
V
IN
=12V
0
50
100
150
200
250
300
350
400
-50 -25 025 50 75 100 125
Quiescent C urrent :I
q
[μA]
Ambient Temperature :Ta[℃]
XC9267B75Cxx
(f
OSC
=1.2MHz)
V
IN
=12V
0
50
100
150
200
250
300
350
400
-50 -25 025 50 75 100 125
Quiescent C urrent :I
q
[μA]
Ambient Temperature :Ta[℃]
XC9267B75Dxx
(f
OSC
=2.2MHz)
V
IN
=12V
21/30
XC9267
Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(10) Internal Soft-Start Time vs. Ambient Temperature (11) External Soft-Start Time vs. Ambient Temperature
(12) PG Detect Voltage vs. Ambient Temperature (13) PG Output Voltage vs. Ambient Temperature
(14) EN/SS Voltage vs. Ambient Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 025 50 75 100 125
Internal Soft-StartTime:t
SS1
[ms]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V
15
20
25
30
35
-50 -25 025 50 75 100 125
External lSoft-StartTime :t
SS2
[ms]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V, R
SS
=430kΩ, C
SS
=0.47μF
0.60
0.65
0.70
0.75
-50 -25 025 50 75 100 125
P G Detect Voltage :V
PGDET
[V]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V
0.0
0.1
0.2
0.3
0.4
-50 -25 025 50 75 100 125
PG Output Voltage :V
PG
[V]
Ambient Temperature :Ta[℃]
XC9267B75xxx
V
IN
=12V, I
PG
=1mA
0.0
1.0
2.0
3.0
4.0
-50 -25 025 50 75 100 125
E N /SS Voltage :
VENSS
[V]
Ambient Temperature :Ta[℃]
XC9267B75xxx
EN/SS"H"
EN/SS"L"
V
IN
=12V
22/30
XC9267 Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Continued)
(15) Load Transient Response
XC9267B75Cxx、 f
OSC
=1.2MHz
V
IN
=12V, V
OUT
=3.3V, I
OUT
=10mA→300mA
V
IN
=24V, V
OUT
=3.3V, I
OUT
=10mA→300mA
XC9267B75Cxx、 f
OSC
=1.2MHz
XC9267B75Cxx、 f
OSC
=1.2MHz
XC9267B75Cxx、 f
OSC
=1.2MHz
V
IN
=12V, V
OUT
=5.0V, I
OUT
=10mA→300mA
V
IN
=24V, V
OUT
=5.0V, I
OUT
=10mA→300mA
V
IN
=12V, V
OUT
=3.3V, I
OUT
=10mA→300mA
XC9267B75Dxx、 f
OSC
=2.2MHz
V
OUT
: 200mV/div
IOUT=10mA
→
300mA
1.0ms/div
V
OUT
: 200mV/div
IOUT=10mA
→
300mA
1.0ms/div
V
OUT
: 200mV/div
IOUT=10mA
→
300mA
1.0ms/div
V
OUT
: 200mV/div
IOUT=10mA
→
300mA
1.0ms/div
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
V
OUT
: 200mV/div
IOUT=10mA
→
300mA
1.0ms/div
L=2.2μH(CLF5030NIT-2R2), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
23/30
XC9267
Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(15) Load Transient Response
(16) Input Transient Response
XC9267B75Cxx、 f
OSC
=1.2MHz
VIN=8V→16V, VOUT=3. 3V, I OUT=300mA
XC9267B75Cxx、 f
OSC
=1.2MHz
VIN=16V→32V, VOUT=3. 3V, I OUT=300mA
XC9267B75Cxx、 f
OSC
=1.2MHz
VIN=8V→16V, VOUT=5. 0V, I OUT=300mA
XC9267B75Cxx、 f
OSC
=1.2MHz
VIN=16V→32V, VOUT=5. 0V, I OUT=300mA
L=4.7μH(CLF5030NIT-4R7), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
L=4.7μH(CLF5030NIT-4R7), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
V
OUT
: 200mV/div
1.0ms/div
V
IN
=8V
→
16V
V
OUT
: 200mV/div
1.0ms/div
V
IN
=8V
→
16V
V
OUT
: 200mV/div
1.0ms/div
V
IN
=16V
→
32V
V
OUT
: 200mV/div
1.0ms/div
V
IN
=16V→32V
XC9267B75Dxx、 f
OSC
=2.2MHz
XC9267B75Dxx、 f
OSC
=2.2MHz
V
IN
=12V, V
OUT
=5.0V, I
OUT
=10mA→300mA
V
IN
=24V, V
OUT
=5.0V, I
OUT
=10mA→300mA
V
OUT
: 200mV/div
I
OUT
=10mA
→
300mA
1.0ms/div
V
OUT
: 200mV/div
I
OUT
=10mA
→
300mA
1.0ms/div
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
24/30
XC9267 Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(16) Input Trans ient Res po nse
(17) EN/SS Rising Response
XC9267B75Dxx、 f
OSC
=2.2MHz
V
IN
=8V→16V, V
OUT
=5.0V, I
OUT
=300mA
XC9267B75Dxx、 fOSC=2.2MHz
V
IN
=16V→32V, V
OUT
=5.0V, I
OUT
=300mA
XC9267B75Dxx、 fOSC=2.2MHz
L=2.2μH(CLF5030NIT-2R2), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
V
OUT
: 200mV/div
1.0ms/div
V
IN
=8V
→
16V
V
OUT
: 200mV/div
1.0ms/div
V
IN
=8V
→
16V
V
OUT
: 200mV/div
1.0ms/div
V
IN
=16V→32V
XC9267B75Cxx、 f
OSC
=1.2MHz
XC9267B75Cxx、 f
OSC
=1.2MHz
V
IN
=24V, V
ENSS
=0→24V, V
OUT
=3.3V, I
OUT
=300mA
V
IN
=12V, V
ENSS
=0→12V, V
OUT
=3.3V, I
OUT
=300mA
1.0ms/div
VEN/ SS=0V→12V
VOUT : 2V/di v
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
1.0ms/div
VEN/ SS=0V→24V
VOUT : 2V/di v
L=4.7μH(CLF5030NIT-4R7), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
25/30
XC9267
Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(17) EN/SS Rising Response
V
IN
=24V, V
ENSS
=0→24V, V
OUT
=5V , I
OUT
=300mA
V
IN
=12V, V
ENSS
=0→12V, V
OUT
=5V , I
OUT
=300mA
XC9267B75Cxx、 f
OSC
=1.2MHz
XC9267B75Cxx、 f
OSC
=1.2MHz
XC9267B75Dxx、 f
OSC
=2.2MHz
XC9267B75Dxx、 f
OSC
=2.2MHz
V
IN
=12V, V
ENSS
=0→12V, V
OUT
=3.3V, I
OUT
=300mA
XC9267B75Dxx、 f
OSC
=2.2MHz
V
IN
=12V, V
ENSS
=0→12V, V
OUT
=5V , I
OUT
=300mA
V
IN
=24V, V
ENSS
=0→24V, V
OUT
=5V , I
OUT
=300mA
1.0ms/div
V
OUT
: 2V/di v
V
EN/ SS
=0V→12V
L=2.2μH(CLF5030NIT-2R2), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
1.0ms/div
V
OUT
: 2V/di v
V
EN/ SS
=0V→24V
V
EN/ SS
=0V→12V
V
OUT
: 2V/di v
1.0ms/div
L=6.8μH(CLF5030NIT-6R8), C
IN
=4.7μF×2(C2012X6S1H475K)
C
L
=10μF×2 (C3216X7R1E106K)
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
V
EN/ SS
=0V→12V
V
OUT
: 2V/di v
1.0ms/div
L=3.3μH(CLF5030NIT-3R3), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
V
EN/ SS
=0V→24V
V
OUT
: 2V/di v
1.0ms/div
26/30
XC9267 Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(18) VIN Rising Response
XC9267B75Dxx、 fOSC=2.2MHz
XC9267B75Cxx、 fOSC=1.2MHz
XC9267B75Cxx、 fOSC=1.2MHz
VIN=0→12V, VENSS=0→12V, VOUT=3. 3V, I OUT=300mA
VIN=0→12V, VENSS=0→12V, VOUT=5 V, I OUT=300mA
VIN=0→24V, VENSS=0→24V, VOUT=5 V, I OUT=300mA
VIN=0→12V, VENSS=0→12V, VOUT=3. 3V, I OUT=300mA
VIN=0→24V, VENSS=0→24V, VOUT=3. 3V, I OUT=300mA
XC9267B75Cxx、 fOSC=1.2MHz
XC9267B75Cxx、 fOSC=1.2MHz
1.0ms/div
VIN=0V→12V
VOUT : 2V/di v
1.0ms/div
VOUT : 2V/di v
VEN/ SS=0V→12V
L=4.7μH(CLF5030NIT-4R7), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
L=2.2μH(CLF5030NIT-2R2), CIN=2.2μF×2(C2012X7R1H225K)
CL=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
1.0ms/div
VIN=0V→24V
VOUT : 2V/di v
1.0ms/div
VOUT : 2V/di v
VEN/ SS=0V→24V
VEN/ SS=0V→12V
V
OUT
: 2V/di v
1.0ms/div
L=4.7μH(CLF5030NIT-4R7), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
L=6.8μH(CLF5030NIT-6R8), CIN=4.7μF×2(C2012X6S1H475K)
CL=10μF×2 (C3216X7R1E106K)
27/30
XC9267
Series
■TYPICAL PERFORMANCE CHARACTERI STICS (Contin ued)
(18) VIN Rising Response
V
IN
=0→12V, V
ENSS
=0→12V, V
OUT
=5V , I
OUT
=300mA
XC9267x75D、 f
OSC
=2.2MHz
V
IN
=0→24V, V
ENSS
=0→24V, V
OUT
=5V , I
OUT
=300mA
XC9267B75Dxx、 f
OSC
=2.2MHz
L=3.3μH(CLF5030NIT-3R3N-D), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
V
EN/ SS
=0V→12V
V
OUT
: 2V/di v
1.0ms/div
L=3.3μH(CLF5030NIT-3R3N-D), C
IN
=2.2μF×2(C2012X7R1H225K)
C
L
=10μF×2 (C3216X7R1E106K)
V
EN/ SS
=0V→24V
V
OUT
: 2V/di v
1.0ms/div
28/30
XC9267 Series
■PACKAGING INFORMATION
For the latest package information go to, www.torexsemi.com/technical-support/packages
PACKAGE OUTLIN / LAND PATTERN THERMAL CHARACTERISTICS
SOT-89-5 SOT-89-5 PKG Standard Board SOT-89-5 Power Di s s i pation
JESD51-7 Board
USP-6C USP-6C PKG Standard Board USP-6C Power Dissipation
JESD51-7 Board
29/30
XC9267
Series
■MARKING RUL E
①② represents product series, products type,
※USP-6C Under dot
③ represents Oscillation Frequency
④⑤ represents production lot number
01～09, 0A～0Z, 11～9Z, A1～A9, AA～AZ, B1～ZZ repeated
(G，I，J，O，Q，W excluded)* No character inversion used.
MARK PRODUCT SERIES
① ②
5 1 XC9267B75***-G
MARK Oscillation Frequency PRODUCT SERIES
N 1.2MHz XC9267B75C**-G
U 2.2MHz XC9267B75D**-G
●SOT-89-5
●USP-6C(Under dot)
④ ⑤
② ③①
1
2
3
6
5
4
5
2 4
1 2 3
⑤
③①
④
②
30/30
XC9267 Series
1. The product and product specifications contained herein are subject to change without notice to
improve performance characteristics. Consult us, or our representatives before use, to confirm that
the information in this datasheet is up to date.
2. The information in this datasheet is intended to illustrate the operation and characteristics of our
products. We neither make warranties or representations with respect to the accuracy or
completeness of the information contained in this datasheet nor grant any license to any intellectual
property rights of ours or any third party concerning with the information in this datasheet.
3. Applicable export control laws and regulations should be complied and the procedures required by
such laws and regulations should also be followed, when the product or any information contained in
this datasheet is exported.
4. The product is neither intended nor warranted for use in equipment of systems which require
extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss
of human life, bodily injury, serious propert y damage i ncludi ng but not limit ed to devi ces or equipment
used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and
other transportation industry and 5) safety devices and safety equipment to control combustions and
explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5. Although we make continuous efforts to improve the quality and reliability of our products;
neverthel ess Semiconduct ors are likely to fail with a certain pr obability. So in or der to prevent persona l
injury and/or property damage resulting from such failure, customers are required to incorporate
adequate safety measur es in their d esign s, such as sy stem fail safes, r edu ndancy and fir e preventio n
features.
6. Our produc ts are not desi gned to be Radiation-resistant.
7. Please use the product listed in this datasheet within the specified ranges.
8. We as sume no responsibility for dam age or loss due to abnormal use.
9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Tore x
Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
