Ordering number: EN1766C | Noaveso || 2SA1407/25C3601 PNP/NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output Applications Applications : Ultrahigh-definition CRT display. ' Video output. : Color TV chroma output. - Wide-band amp. Features - High fp : fp typ =400MHz. - High breakdown voltage : Vopg= 200V. - Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). - Complementary PNP and NPN types. - Adoption of FBET process. ( }:28A41407 Absolute Maximum Ratings at Ta=25C unit Collector-to-Base Voltage Vecso ()200 Vv Collector-to-Emitter Voltage Vero (})200 Vv Emitter-to-Base Voltage VEBO ()4 Vv Collector Current Ic ()150 mA Collector Current (Pulse) Icp ()300 mA Collector Dissipation Pe 1.2 WwW Tco=25C 7 Ww Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25C min typ max unit Collector Cutoff Current Icpo Vep=()150V Ig =0 ()0.1 pA Emitter Cutoff Current IzBo Viep=()2V,I=0 (-)1.0 pA DC Current Gain hpg(1) Ver =()10V Ig=()10mA 403% 320% hpg(2) Ver=(-)10V,I=()100mA 20 Gain-Bandwidth Product fp Vorn=()30V,I=()50mA 400 MHz C-E Saturation Voltage Vortsat) Icp=()50mA,Ip=(-)5mA 06 V (0.8) Continued on next page. *& : The 25A1407/28C3601 are classified byl0mA hpg as follows. 40 C 80 60 D 120 Package Dimensions 2009B 100 E 200 160 F 320 (unit : mm) 1: Emitter JEDEC: TO-126 2: Collector 3: Base ' SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90495MO (KOTO)/3277KI/D105MW/2225MW, TS 8-7231 No.1766-1/428A1407/28C3601 Continued from preceding page. min typ max unit B-E Saturation Voltage Veksat) Ico=()50mA,Ip=()5mA (-)10 V C-B Breakdown Voltage Veerceo Ic=(-)10yAIp=0 ()200 Vv C-E Breakdown Voltage Vipriccto Ic=()1mA,Rpp=o ()200 Vv E-B Breakdown Voltage VipRyEBO Ip=()100uA,Ip=0 (-)4 V Output Capacitance Cob Vcp=()30V, f=1MHz 2.5 pF (3.0). pF Reverse Transfer Capacitance Cre Vog=()30V, f=1MHz 2.0 pF (2.5) pF -50 Ic = Vee Ic_- Vce 50 28A1407 30004 25C3601 500 uA 450 yA < -40 250A, 4 40 400 350.4 o a = 300 5 -30 3 30 250 E | 150A 120 re 20 200 nA o z - 100 8 150A x 8 - 3 100,A -10 =SoeA 10 50eA 0 In=0 oO in=0 0 -2 -4 -6 -B -10 -{2 -14 -16 -18 -20 0 2 4 6 8 10 12 1% 1% 18 20 Collecter-to-Emitter Voltage, Vog V Collecter-to-Emitter Voltage, Vcp V lc - V le =- V -160 c BE - 460 c BE | 2541407 2503601 -140 { Voges 10V 1460 | Vor=10V t [| 4 F -100 F 100 5 a E [ : | & ~80 : H 80 o | o 8 -60 8 60 2 wy 2 a | & -40 | 3 40 | ~20 20 7 0 0 GO -O2 -04 -06 -0-8 10 =12 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, Vy V Base-to-Emitter Voltage, Vpp V hre Ic hee Ie 28A1407 Vee= 10V 25C3601 Vop=10 Ba 100 1400 4 a | 7 a g 9 a g 5 5 5 5 Q a A o = oS ~10 -100 10 100 Collector Current,I> mA Collector Current,I, mA t No.1766-2/425A1407/2SC3601 Collecter-to-Emitter Saturation Voltage, Vcrcay V Gain-Bandwidth Product fp MHz Output Capacitance,Cob pF Reverse Transfer Capacitance,Cre pF 1000 t= Ic 25A1407 7 Voge=-30V i 3 Pal 4 Fa \ F we a 100 7 5! . -10 7 ~400 Collector Current,Ip mA 2 Cob,Cre - Veg 25A1407 f=1MHz 40 | ? . SL! ~SN C = 3 ~~, 2 Cog ~~ he, 1.0 7 5 7 J -1.0 a 4 2 -10 z ~100 Collector-to-Base Voltage, Von V 2 Vcetsat) - Ic 2541407 Icfip=10 4.0 , | 5 y 2 f Wi 0.4 , 4 7 3 7 5 7 . -10 Z 3 a -100 a J Collector Current,I; mA Collector Current,I, mA ASO 25A1407/25C3601 cm 100 10 or PNP, minus sign is omitted. 10 100 Collecter-to-Emitter Voltage, Veg V 4000 fr_- Ie 8 25C3601 go Vop=30V i 5 we 5 3 Ls 2, N\ 3 3 : \ ar Z a = ca \ 3 ral d 400 a a Oo 7 5 5 7 40 2 3 5 100 z 3 Collector Current,I, mA 5 Cob,Cre - Veg A 2803601 | f=1MHz 2 10 o fu @ F a9 + iS fj Sy gs me rs) Se 5 2 Ee q Cre SE & Oe 2310 ah & o 33 7 on 749) 2 FF ST yy 2 3 5 T ay Collector-to-Base Voltage, Voy V Veewat) Ic 2503601 Ic/Ip =10 o Saturation Voltage, Vopisay V Qo Collecter-te-Emitter 10 a 100 Collector Current,I, mA Pe - Ta 7 od = md N\ = o N S on o Vg NS NA NX Collector Dissipation,Po ~ W So mR IN N 140 oa Y o 20 40 60 60 100 120 160 Ambient Temperature, Ta C No.1766-3/425A1407/25C3601 Collector Dissipation, Pp W : NI , N 0 2m 2 6 8 10 120 10 0 Case Temperature,Tc C HENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property less, M Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses asSociated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual Property rights or other rights of third parties. ' This catatog provides information as of September, 1995, Specifications and information herain are subject te change without notice, No.1766-4/4| Ordering number: EN1973A | [Noasren ~ 28A1469/2SC3746 PNP/NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications Applications - Various inductance lamp drivers for electrical equipment. - Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). - Power amp (high power car stereo, motor controller). - High-speed switching (switching regulator, driver). Features - Low saturation voltage. - Excellent eurrent dependence of hp. - Short switching time. - Micaless package facilitating mounting. ( ):2S5A1469 Absolute Maximum Ratings at Ta= 25C unit Collector-to-Base Voltage Vepo ()80 v Collector-to-Emitter Voltage Voro (}60 Vv Emitter-to-Base Voltage VEBo (-)5 v Collector Current Ic (-)6 A Collector Current (Pulse) Icp (-)7 A Collector Dissipation Pe 2 W Te= 25C 20 WwW Junction Temperature Tj 150 = =C Storage Temperature Tstg -55to+150 C Electrical Characteristics at Ta= 25C min typ max unit Collector CutoffCurrent Icgo Vcop=()40V, Ip=0 ()0.1 mA Imitter CutoffCurrent Igpo Vep=(}4V,Ic=0 ()0.1 mA DC Current Gain her Ver=()2V,Io=(-)IA Tx 280% Gain-Bandwidth Product fp Ver=()5V, Ie=(JIA 100 MHz C-E Saturation Voltage Vopgaty Ic=(-)2.5A, Ig=()0.125A ()0.4 Vv Continued on next page. * : The 25A41469/25C3746 are classified by 1A hp as follows | 70 Q 140 | 100 R 200 | 140 s- 280 | Package Dimensions 2041 (unit : mm) + | 2.4 16.0 aR E nN 3 in to 8 N 7-2 E: Emitter ta [ === C: Collecter LO-7 8B: Base SANYO: TO220ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3277KUN265KI No.1973-1/425A1469/2SC3746 Continued from preceding page. min typ max unit C-B Breakdown Voltage Visrepo Ic={)imA,Ig=0 ()80 Vv C-E Breakdown Voltage Verceo Ic=()lmA, Rap=o ()60 Vv E-B Breakdown Voltage VipryeBo Ip=()lmA,Ic=0 ()5 Vv Turn-on Time ton See specified Test Circuit. 0.1 BS Storage Time tstg 0.5 ps Fall Time te 0.1 ae) Switching Time Test Circuit PW = 20, jet OUTPUT FL INPUT vr! 5 7 VBE=-5V Voo= 20V 201 g1 = 201g2 =I 2A (For PNP, the polarity is reversed). Unit (Resistance : 2, Capacitance : F} - Ic 7 VaE 5 le - Vag 25A1469 25C3746 -s5 Vop= 2V Vog=2v , [LI , Li Collector Current, Ip A ob 25% T ee 40C | | 0 -02 O04 -O6 -0.8 -1.6 a2 Base-to-Emitter Voltage, Vgp V 1000 hee - Ic 7 2SA1469 5 Ver =-2V 3 E 2 a 100 Oo 9 = 5 o 5 3 Oo 2 o QO a & 3 0.01 ~O1 10.062 -10 Collector Current, Ip A Collector Current, Ip A N 42055 25C tT! 0 02 O4 06 O86 1.0 1.2 Base-to-Emitter Voltage, Vag V hee ~ Ie 100 28C3746 Veg s2V ix] ie Rs oc 100 a 7 =) S Pe 3 5 2 a o 110 wn 10 6.1 1,0 * CoMector Current, Ig A - No.1973-2/428A1469/25C3746 8 uw ~ = o Gain-Bandwidth Product, f MHz ~~ -0.01 0.1 1.0 -10 Collector Current, Ip A Vece(sat)} !c L 8 i] = Q ~ J a an) 8 "3.8 -1.0 aS aS 5 S'5 3 uo 2 3 3 B01 23 OM 3 2 -0,01 t 2 o = -0.1 -1.0 -10 Collector Current, I. A ASO 28A1469 uw A o Collector Current, Io A ' S 3 400 -10 Collector-to-Emitter Voltage, Veg V Pe 2 c Ta se 20 N\ nh 16 NN \ gn x A 8 3 2 a4 N. oO |2 No heat sink N\ o _ ooo NN 9 20 60. BO 1m 120 ~ 140 160 Ambient Temperature, Ta C fr. -- Ic Gain-Bandwidth Preduct, f - MHz 3 6.01 ol 1.0 Collector Current, I A Veetsat) Ic 8 a o bo te UF Saturation Voltage, Vogisay o ~ = Collector-to-Emitter 0.01 O01 O41 1.0 10 Collector Current,Ig A ASO 3 2803746 NS ow A os : ~~ Collector Current, Ic - A w i S ua 7 10 Collector-to-Emitter Voltage, Veg V 100 No.1973-3/425A1469/25C3746 @ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost arid expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.1973-4/4