MCNA120UI2200TED 3~ Rectifier High Voltage Thyristor Module Brake Chopper VRRM = 2200 V VCES = 1700 V I DAV = 120 A I C25 I FSM = 500 A VCE(sat) = = 113 A 2.5 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number MCNA120UI2200TED Backside: isolated 24/25 34 36 38 30 29 45/46 NTC 3 6/7 10/11 14/15 21/22 41 40 48/49 Features / Advantages: Applications: Package: E2-Pack Thyristor/Standard Rectifier for line frequency Planar passivated chips Long-term stability Low forward voltage drop Leads suitable for PC board soldering Copper base plate with Direct Copper Bonded Al2O3-ceramic Improved temperature and power cycling 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling Phase Change Material available Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 2200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 2200 V TVJ = 25C 50 A TVJ = 125C 10 mA IT = TVJ = 25C 1.33 V 2.05 V 1.36 V IT = 40 A TVJ = 125 C 40 A I T = 120 A TC = 80 C bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing 2.38 V T VJ = 150 C 120 A TVJ = 150 C 0.83 V 13.6 m d= for power loss calculation only Ptot V VR/D = 2200 V I T = 120 A I DAV max. Unit 2300 V 0.65 K/W 0.1 K/W TC = 25C 190 W t = 10 ms; (50 Hz), sine TVJ = 45C 500 A t = 8,3 ms; (60 Hz), sine VR = 0 V 540 A t = 10 ms; (50 Hz), sine TVJ = 150 C 425 A t = 8,3 ms; (60 Hz), sine VR = 0 V 460 A t = 10 ms; (50 Hz), sine TVJ = 45C 1.25 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 1.22 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 905 As 880 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 700 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 13 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = 120 A t P = 200 s; di G /dt = 0.45 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.4 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 70 mA TVJ = -40 C 150 mA VGD gate non-trigger voltage TVJ = 150C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 C 150 mA I G = 0.45 A; V = VDRM non-repet., I T = 150 A/s 40 A 500 A/s 1000 V/s TVJ = 150C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 40A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 500 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TC = 25C 113 A TC = 80 C 80 A 445 W 2.93 V TVJ = collector emitter voltage I C80 typ. 25C TC = 25C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 900 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; V GE = 15 V TVJ = 25C 2.5 TVJ = 125C 3 5.2 5.8 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 6.4 V 0.6 mA 5 mA TVJ = 125C 75 A VGE = 15 V; R G = 18 VGE = 15 V; R G = 18 SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1700 V VCE = 720 V; VGE = 15 I SC short circuit current RG = 18 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 850 nC 270 ns 100 ns 700 ns 430 ns 34 mJ 17.5 mJ TVJ = 125C VCEK = 1700 V I CM V 400 inductive load VCE = 900 V; IC = max. Unit 1700 V TVJ = 125C 150 A 10 s A 280 0.28 K/W K/W 0.1 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1700 V I F25 forward current TC = 25C 75 A TC = 80 C 50 A TVJ = 25C 2.45 V TVJ = 25C 0.1 mA TVJ = 125C 1 mA I F80 VF forward voltage I F = 60 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 900 V 600 A/s 60 A; VGE = 0 V TVJ = 125C 2.20 V 20 C 46 A 1300 ns 10.5 mJ 0.65 K/W 0.1 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220e MCNA120UI2200TED Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 40 Unit A -40 150 C -40 125 C 125 C 176 Weight MD 3 mounting torque d Spp/App t = 1 minute 2D Barcode mm terminal to backside 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL 1 mA M C N A 120 UI 2200 T ED UL Part Number Date Code Location Ordering Standard Nm Part description XXXXXXXXXX yywwZ Logo 6 6.0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Ordering Number MCNA120UI2200TED = = = = = = = = = Module Thyristor (SCR) High Voltage Thyristor (>= 2000V) Current Rating [A] 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E2-Pack Marking on Product MCNA120UI2200TED Delivery Mode Box Quantity 36 Code No. 510374 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25 B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k R K [ ] 104 103 Equivalent Circuits for Simulation I V0 R0 * on die level Thyristor Brake IGBT + Brake Diode T VJ = 150C 102 0 V 0 max threshold voltage 0.83 1.17 1.34 V R0 max slope resistance * 10.5 25 15.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Outlines E2-Pack D A 17 0,5 20,6 0,5 3,5 0,5 O6 Vor der Montage typ. 100 m konvex uber 75 mm Before mounting typ. 100 m convex over 75 mm O 2,5 -0,3 O 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 0,2 15 1 6 Detail A 0,8 0,05 1,2 0,05 93 0,2 65,55 69,36 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 61,74 65,55 Index 41,90 50,31 42,69 46 32 0,2 O 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 0,2 35,07 23,64 27,45 79,2 C 107,5 0,3 Bemerkung / Note: - Nichttolerierte Mae nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT(R) (Groe / size: K25) - Max. Schraubenlange / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24/25 34 36 38 29 30 NTC 3 6/7 10/11 14/15 21/22 IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 45/46 41 40 48/49 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Thyristor 120 104 500 VR = 0 V 50 Hz, 80% VRRM 100 400 80 IT ITSM TVJ = 125C 60 [A] I 2t 300 150C 103 TVJ = 45C [A] TVJ = 45C 2 [A s] 40 TVJ = 140C 200 TVJ = 140C 20 TVJ = 25C 0 0.5 102 100 1.0 1.5 2.0 2.5 0.01 0.1 VT [V] 5 2 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 100.0 3 2 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 1: IGD, TVJ = 140C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 1 t [s] Fig. 1 Forward characteristics 10 1 100 dc = 1 0.5 0.4 0.33 0.17 0.08 80 6 TVJ = 25C 10.0 4 ITAVM 60 tgd 1 [V] lim. [s] 1.0 [A] 40 typ. 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 0.1 0.01 10000 0 0.10 60 40 80 120 160 Tcase [C] Fig. 6 Max. forward current at case temperature 0.80 dc = 1 0.5 0.4 0.33 0.17 0.08 Ptot 0 Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 10.00 IG [A] IG [mA] 100 1.00 0.70 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 [W] 0.60 0.50 ZthJC 0.40 i Rthi (K/W) 1 0.0100 2 0.0500 3 0.1400 4 0.3000 5 0.1500 [K/W] 40 0.30 0.20 20 0.10 ti (s) 0.0004 0.0090 0.0140 0.0500 0.3600 0.00 0 0 20 40 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Brake IGBT + Diode 140 120 120 100 125C IC 80 100 11 V TVJ = 125C IC 80 [A] 60 [A] 60 40 40 20 20 0 80 [A] 60 9V 40 1 2 0 1 2 3 6 4 400 RG = 18 Ohm VCE = 900 V VGE = 15 V TVJ = 125C 300 [mJ] 40 800 30 tr Eoff 200 20 100 80 400 [ns] RG = 18 Ohm 16 80 120 60 Erec Irr 8 40 40 80 120 10 Erec 0 0 20 40 60 200 20 0 0.0 8 1.0 1.5 2.0 2.5 3.0 VF [V] Fig. 6 Typ. forward characteristics Diode 1 Diode 80 TVJ = 125C VR = 900 V IF = 60 A 6 60 [mJ] 0 80 100 120 140 0.5 100 Erec 20 Erec [A] 120 Irr [A] 4 4 125C 60 0 160 12 [A] [mJ] 25C IF IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current Irr 12 VCE = 900 V VGE = 15 V TVJ = 125C Eoff 0 100 RG =18 Ohm VR = 900 V TVJ = 125C 13 40 0 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 20 t tf 10 0 160 120 12 600 Eon 0 11 100 [ns] [mJ] 20 10 80 tr 40 9 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT td(off) Eon 40 8 VGE [V] td(on) 0 7 VCE [V] Fig.1 Output characteristics IGBT 60 25C 0 3 VCE [V] 80 125C 20 0 0 VCE = 20 V 140 13 V 17 V 15 V 120 25C 100 IC VGE = 19 V 140 Irr ZthJC IGBT [K/W] 40 Diode Ri ti 0.010 0.001 0.050 0.001 0.240 0.021 0.350 0.090 0.1 2 20 0 10 20 30 40 0 50 1 10 100 IGBT Ri ti 0.010 0.001 0.030 0.008 0.120 0.045 0.070 0.100 1000 10000 IF [A] RG [Ohm] t [ms] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e